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High-frequency measurement of integrated circuit components
418
WORLD
ABSTRACTS
ON MICROELECTRONICS
Colour decoder using integrated circuits. M. C. GANDER, P. W. BACON, D. J. BEAKHURST and R. P. GANT. Mulla~d Tech. Commun., No. 113, January (1972), p. 80. A decoder circuit using four ICs designed for use with the PAL system is described. It processes the luminance and chrominance signals to give the red, green and blue outputs to the tube. The alignment procedure is also described. The circuit can be assembled on a printed circuit board measuring 230 × 170 mm.
System considerations in d y n a m i c MOS RAM's. D. BAPATand D. MRAZEK.EEN, February (1972), p. 30. The characteristics of a random access memory capable of precharge decoding without losing system performance, and bipolar compatibility, is compared with those of an earlier design in a similar application.
Bipolar techniques approach i O S in density, cost and power drain, yet retain speed. Electronics, February (1972), p. 82. To achieve small size, the number of interconnections and isolation areas are reduced--in a memory by integrating functions and in a shift register by clever circuit organization and direct collector coupling. IC op amps simplify regulator design. EDN/EEE, January (1972), p. 30. Regulator design can be simple if you have ICs in your design arsenal. T h e three regulators described will make you want to design one yourself.
High-frequency m e a s u r e m e n t of integrated circuit components. H. A. KEMHADJIAN and M. A. FLEMMINn. Radio Electron. Engnr 42 (1972), p. 81. A jig for extending a 50 f~ high frequency measuring system to the pads of a chip device is described. No permanent wire bonds are used and contact may be made with normal aluminium pads. The electrical characterization of the jig up to 1 GHz has been carried out using a general radio transfer function and immittance bridge, and Y-parameter measurements on typical chip devices have been obtained. The results are applicable to the design of integrated circuits and to device modelling.
CMOS digital wristwatch features liquid crystal d i s p l a y . N. A. LucE. Electronics, April (1972), p. 93. Used with complementary MOS, bidirectional switching found best way to drive display for power conservation and ease of manufacture; next generation also to have built-in counter and driver circuits.
AND
RELIABILITY
Chip set makes a powerful processor. S. W. FIELDS. Electronics, April (1972), p. 121. M O S / L S I circuits can be combined into computer-like systems for poinl-ofsale terminals, controllers, scientific calculators.
Low-power digital phase locked loop u t i l i z e s CMOS logic. D. A. JOHNSON. EDN/EEE, March (1972), p. 36. Phase locking can improve data transmission efficiency greatly, and with this circuit the penalty is only 10 m W of power.
Components of the integrated TTL circuit. I). ARMGARTH. Nachrichtentech. 22 (1972), p. 72 (In German.) A brief review of the insulating method is followed by a description of the electric properties of the amplifier transistors, multiple-emitter transistor, diode and reactances of the integrated T T circuit
Functional digital ICs: devices to delight t h e systems man. R. PERCIVAL and J. GaAY. Electronics, March (1972), p. 78. Circuit designers consider the system builder's viewpoint to develop a new [)reed of integrated circuits more flexible and versatile than older designs to streamline solution of man;: problems 71or,' encountered.
Digital ICs offer n e w solutions for rough industrial problems. E. TYNAN and B. BURI.INGAME.EDN/EEE, February (1972), p. 20. Here are some guides for choosing and interfacing digital ICs that will be used in sevcr~' commercial applications.
Ion impact sputtering for etching and m i c r o m a c h i n i n g . L. HOLLAND. Electron. Comport., May (1972), p. 493. Research has commenced into the use ot controlled ion beams for profile machining on a nucroscale. To aid understanding of sputter-machining techniques the mechanisms by which surface material is released by ion impact is discussed. This is followed by a review of the types of sputter etching and machining systems which have been evolved. In conclusion, work in the writer's laboratory using glow discharge, r.f. plasma and ion-beam systems is discussed, and two kinds of ion-beam system are described. As beams of heavy ions in the energy range ~ 1 5 0 keV are used for producing composition changes by ion implantation in solid state devices, one can foresee the use of ion beams of different species and energy for machining and modifying the surfaces of materials used in microelectronics.
7. S E M I C O N D U C T O R I N T E G R A T E D CIRCUITS, DEVICES A N D M A T E R I A L S Potential distributions in surface p-n junctions. J. S. HILL, W. S. NICOL and A. K. WALTON. Solid State Electron. 15 (1972), p. 265. An analysis of the potential and charge distributions existing in surface p - n junctions is presented. These junctions arise when, for example, a thin layer of one conductivity type is formed on a substrate of opposite conductivity type. It is shown that when the layer is thin the "built-in"
potential of the semi-infinite junction, which corresponds to the Fermi level difference of the constituent p and tt regions, will not be realized. For an n-type layer which is thick enough for hole enhancement to be negligible, but thin enough for electron depletion to be considered complete, the "built-in" potential and potential across t h e layer are both proportional to the square of layer thickness. In thinner layers hole enhancement is [roper-
WORLD
ABSTRACTS
ON MICROELECTRONICS
Colour decoder using integrated circuits. M. C. GANDER, P. W. BACON, D. J. BEAKHURST and R. P. GANT. Mulla~d Tech. Commun., No. 113, January (1972), p. 80. A decoder circuit using four ICs designed for use with the PAL system is described. It processes the luminance and chrominance signals to give the red, green and blue outputs to the tube. The alignment procedure is also described. The circuit can be assembled on a printed circuit board measuring 230 × 170 mm.
System considerations in d y n a m i c MOS RAM's. D. BAPATand D. MRAZEK.EEN, February (1972), p. 30. The characteristics of a random access memory capable of precharge decoding without losing system performance, and bipolar compatibility, is compared with those of an earlier design in a similar application.
Bipolar techniques approach i O S in density, cost and power drain, yet retain speed. Electronics, February (1972), p. 82. To achieve small size, the number of interconnections and isolation areas are reduced--in a memory by integrating functions and in a shift register by clever circuit organization and direct collector coupling. IC op amps simplify regulator design. EDN/EEE, January (1972), p. 30. Regulator design can be simple if you have ICs in your design arsenal. T h e three regulators described will make you want to design one yourself.
High-frequency m e a s u r e m e n t of integrated circuit components. H. A. KEMHADJIAN and M. A. FLEMMINn. Radio Electron. Engnr 42 (1972), p. 81. A jig for extending a 50 f~ high frequency measuring system to the pads of a chip device is described. No permanent wire bonds are used and contact may be made with normal aluminium pads. The electrical characterization of the jig up to 1 GHz has been carried out using a general radio transfer function and immittance bridge, and Y-parameter measurements on typical chip devices have been obtained. The results are applicable to the design of integrated circuits and to device modelling.
CMOS digital wristwatch features liquid crystal d i s p l a y . N. A. LucE. Electronics, April (1972), p. 93. Used with complementary MOS, bidirectional switching found best way to drive display for power conservation and ease of manufacture; next generation also to have built-in counter and driver circuits.
AND
RELIABILITY
Chip set makes a powerful processor. S. W. FIELDS. Electronics, April (1972), p. 121. M O S / L S I circuits can be combined into computer-like systems for poinl-ofsale terminals, controllers, scientific calculators.
Low-power digital phase locked loop u t i l i z e s CMOS logic. D. A. JOHNSON. EDN/EEE, March (1972), p. 36. Phase locking can improve data transmission efficiency greatly, and with this circuit the penalty is only 10 m W of power.
Components of the integrated TTL circuit. I). ARMGARTH. Nachrichtentech. 22 (1972), p. 72 (In German.) A brief review of the insulating method is followed by a description of the electric properties of the amplifier transistors, multiple-emitter transistor, diode and reactances of the integrated T T circuit
Functional digital ICs: devices to delight t h e systems man. R. PERCIVAL and J. GaAY. Electronics, March (1972), p. 78. Circuit designers consider the system builder's viewpoint to develop a new [)reed of integrated circuits more flexible and versatile than older designs to streamline solution of man;: problems 71or,' encountered.
Digital ICs offer n e w solutions for rough industrial problems. E. TYNAN and B. BURI.INGAME.EDN/EEE, February (1972), p. 20. Here are some guides for choosing and interfacing digital ICs that will be used in sevcr~' commercial applications.
Ion impact sputtering for etching and m i c r o m a c h i n i n g . L. HOLLAND. Electron. Comport., May (1972), p. 493. Research has commenced into the use ot controlled ion beams for profile machining on a nucroscale. To aid understanding of sputter-machining techniques the mechanisms by which surface material is released by ion impact is discussed. This is followed by a review of the types of sputter etching and machining systems which have been evolved. In conclusion, work in the writer's laboratory using glow discharge, r.f. plasma and ion-beam systems is discussed, and two kinds of ion-beam system are described. As beams of heavy ions in the energy range ~ 1 5 0 keV are used for producing composition changes by ion implantation in solid state devices, one can foresee the use of ion beams of different species and energy for machining and modifying the surfaces of materials used in microelectronics.
7. S E M I C O N D U C T O R I N T E G R A T E D CIRCUITS, DEVICES A N D M A T E R I A L S Potential distributions in surface p-n junctions. J. S. HILL, W. S. NICOL and A. K. WALTON. Solid State Electron. 15 (1972), p. 265. An analysis of the potential and charge distributions existing in surface p - n junctions is presented. These junctions arise when, for example, a thin layer of one conductivity type is formed on a substrate of opposite conductivity type. It is shown that when the layer is thin the "built-in"
potential of the semi-infinite junction, which corresponds to the Fermi level difference of the constituent p and tt regions, will not be realized. For an n-type layer which is thick enough for hole enhancement to be negligible, but thin enough for electron depletion to be considered complete, the "built-in" potential and potential across t h e layer are both proportional to the square of layer thickness. In thinner layers hole enhancement is [roper-