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High precision end-point detector
UET News UET, Beaverton, Oregon, USA, has n a m e d Keith Ritala as Director, Marketing and Sales, a new position. He will be responsible for product strategy, business d e v e l o p m e n t and direct sales of UET's line of GaAs and InP based epiwafers. Keith will be k n o w n to readers t h r o u g h his previous e m p l o y at J o h n s o n Matthey Electronics, Spokane, and he brings over 17 years experience in pure metals, c o m p o u n d semiconductors and other electronic materials. •
High precision end-point detector Reactive Ion Etching (RIE) is one of the m o s t widely used techniques in the manufacture of integrated circuits (ICs). It enables chip manufacturers to etch successive dielectric layers on ICs with a high degree of accuracy. However, w h e n it c o m e s to reversing the process to analyze decapsulated c o m p o n e n t s for circuit failure or for reverse engineering - test laboratories run up against a major difficulty. There is no simple way of determining the exact thickness of the etched layer or the etching speed. Now IRIS of Caen Cedex, France, has developed an end-point detection system which allows m o n i t o r i n g of the etching process for each layer with greater precision t h a n before. Based o n the laser interferometry principle, the EDPS 2000
automatically halts the etching process as soon as a new layer i~ detected. EDPS 2000's laser beam is adjusted so that the angle between the chip and the beam is maintained at a constant 90 °, thereby reducing diffraction and reflection interference and improving the signal. The beam itself is extremely narrow (from 10 to 100 B) and can be focused on a very small area. • For further information contact IRIS, 14 rue des Chanoines, BP 432, 14013 Caen Cedex, France. Tel: (33)(0) 31 93 13 60; Fax: (33)(0) 31 44 49 88.
Epiquip in Swedish consortium A Swedish consortium for R&D in the area of n a n o m e t r e structures has been formed in Lurid, Sweden. The goal of the consortium is to develop advanced forms of epitaxy, etching and lithography to fabricate structures with dimensions in the n a n o m e t r e range and to develop different areas of characterization and applications of n a n o m e t r e structures. The Nanometre Consortium, headed by Professor Samuelson, includes more t h a n ten research groups from university and industry, active in areas of semiconductor physics, synchrotron radiation physics, nuclear physics, physical chemistry and biotechnology. The main industrial m e m b e r is Lurid-based manufacturer of e q u i p m e n t for epitaxy, Epiquip AB. One of the main projects within the
consortium is d e v e l o p m e n t of electron beam and plasma enhanced epitaxy and etching of semiconductors, e.g. for fabrication of q u a n t u m wires and q u a n t u m dots, primarily for studies of basic physics of lowdimensional structures. To this end a new n a n o m e t e r structure laboratory has been put in use at the Department of Solid State Physics at Lund University. In the same research group, techniques for n a n o m e t r e structure imaging using low temperature CL, STM, as well as atomic force microscopy are used. At the Centre for High Resolution Electron Microscopy crosssectional imaging using a 400 keV TEM are
performed. Highly focused ion beams and VUV-radiation from the
s y n c h r o t r o n radiation facility are also used for modifi.cation and characterization of materials. Techniques for immobilization of biomolecules o n n a n o m e t r e structured surfaces are developed by research groups in biophysics and biotechnology. With its unusually strong emphasis o n long term and interdisciplinary research this c o n s o r t i u m makes it possible to perform b o t h research and d e v e l o p m e n t in new areas. • For further information contact Jan-Olov Fornell, Epiquip AB, Science Park Ideon, S-223 70 Lund, Sweden. Tel: +46 46 168740; fax: +46 46 148234.
are y o u r susceptors really clean? LET US DO IT FOR YOU
• • • • • •
Purification service MOCVD, LPE, Bulk Growth Single stage dry process R . G . A . and run data R e m o v a l of solid and gas impurities N e w or used parts
• Graphite o f S i C coated • R e t u r n e d v a c u u m packed • F a s t turn round
AT I,'.
ADVANCED FURNACE TECHNOLOGY LTD. AFTech Ltd., Cambridge, U.K. Tel: (0223) 245033/461321, Fax: (0223) 410267 t For informationcircle 234
High precision end-point detector Reactive Ion Etching (RIE) is one of the m o s t widely used techniques in the manufacture of integrated circuits (ICs). It enables chip manufacturers to etch successive dielectric layers on ICs with a high degree of accuracy. However, w h e n it c o m e s to reversing the process to analyze decapsulated c o m p o n e n t s for circuit failure or for reverse engineering - test laboratories run up against a major difficulty. There is no simple way of determining the exact thickness of the etched layer or the etching speed. Now IRIS of Caen Cedex, France, has developed an end-point detection system which allows m o n i t o r i n g of the etching process for each layer with greater precision t h a n before. Based o n the laser interferometry principle, the EDPS 2000
automatically halts the etching process as soon as a new layer i~ detected. EDPS 2000's laser beam is adjusted so that the angle between the chip and the beam is maintained at a constant 90 °, thereby reducing diffraction and reflection interference and improving the signal. The beam itself is extremely narrow (from 10 to 100 B) and can be focused on a very small area. • For further information contact IRIS, 14 rue des Chanoines, BP 432, 14013 Caen Cedex, France. Tel: (33)(0) 31 93 13 60; Fax: (33)(0) 31 44 49 88.
Epiquip in Swedish consortium A Swedish consortium for R&D in the area of n a n o m e t r e structures has been formed in Lurid, Sweden. The goal of the consortium is to develop advanced forms of epitaxy, etching and lithography to fabricate structures with dimensions in the n a n o m e t r e range and to develop different areas of characterization and applications of n a n o m e t r e structures. The Nanometre Consortium, headed by Professor Samuelson, includes more t h a n ten research groups from university and industry, active in areas of semiconductor physics, synchrotron radiation physics, nuclear physics, physical chemistry and biotechnology. The main industrial m e m b e r is Lurid-based manufacturer of e q u i p m e n t for epitaxy, Epiquip AB. One of the main projects within the
consortium is d e v e l o p m e n t of electron beam and plasma enhanced epitaxy and etching of semiconductors, e.g. for fabrication of q u a n t u m wires and q u a n t u m dots, primarily for studies of basic physics of lowdimensional structures. To this end a new n a n o m e t e r structure laboratory has been put in use at the Department of Solid State Physics at Lund University. In the same research group, techniques for n a n o m e t r e structure imaging using low temperature CL, STM, as well as atomic force microscopy are used. At the Centre for High Resolution Electron Microscopy crosssectional imaging using a 400 keV TEM are
performed. Highly focused ion beams and VUV-radiation from the
s y n c h r o t r o n radiation facility are also used for modifi.cation and characterization of materials. Techniques for immobilization of biomolecules o n n a n o m e t r e structured surfaces are developed by research groups in biophysics and biotechnology. With its unusually strong emphasis o n long term and interdisciplinary research this c o n s o r t i u m makes it possible to perform b o t h research and d e v e l o p m e n t in new areas. • For further information contact Jan-Olov Fornell, Epiquip AB, Science Park Ideon, S-223 70 Lund, Sweden. Tel: +46 46 168740; fax: +46 46 148234.
are y o u r susceptors really clean? LET US DO IT FOR YOU
• • • • • •
Purification service MOCVD, LPE, Bulk Growth Single stage dry process R . G . A . and run data R e m o v a l of solid and gas impurities N e w or used parts
• Graphite o f S i C coated • R e t u r n e d v a c u u m packed • F a s t turn round
AT I,'.
ADVANCED FURNACE TECHNOLOGY LTD. AFTech Ltd., Cambridge, U.K. Tel: (0223) 245033/461321, Fax: (0223) 410267 t For informationcircle 234