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High speed I2L
182
World Abstracts on Microelectronics and Reliability
Special report: film carriers star in high-volume IC production. JErkY LYMAN. Electronics p. 61 (Dec. 25 1975). In a move that's gathering m o m e n t u m around the world, more and more semiconductor manufacturers are adopting an automated film-carrier approach to assembling integrated-circuit packages. For the manufacturer, film carrier has meant lower production costs and high profit margins on high-volume products. For the user, it means high reliability at low prices.
High speed 12L. C. MULDER and H. E. J. WULMS. First European Solid State Circuits Co#![erenee (ESSCIRC), Canterbury p. 28. 2 5 Sept. 1975. One of the striking characteristics of present-day I"L recommended as a feature, is the compact transistor structure, where the P N P injector and N P N multi-collector transistor have been combined. In the ncw approach separate N P N and P N P transistors have been used. A new process with L O C O S and aiding field in the NPN-basc results in fast NPN transistors in saturation. With some electronic improvements a gate delay of 4 nscc has been achieved, In the isolated version (PNP bases and N P N emitters isolated from each other) analog and digital circuitry can be combined on the same chip with the additional feature that now a fast interface with saturated logic can be incorporated.
Nonsaturated integrated injection logic in circuit design. M. |. ELMASRY. First European Solid State Circuits Cot!ference (ESSCIRC), Canterbury p. 20. 2 5 Sept. 1975. Conventional IZL structures suffer from the saturation of the upward npn transistors, This saturation limits the maxim u m frequency at which the structure can operate. In order to reduce this saturation effect, it has been suggested that a d u m m y collector be added to the multicollector structure which is connected to the c o m m o n p-region base. The technique not only improves the transient performante of the structure but also provides a flexible circuit to be used in other digital applications. The effect of series resistance and distributed parasitic diode action on multicollector I:L structures. C. S. DEN BRINKE;R and A. N. MORGAN. First European Solid State Circuits Cm!/brenee (ESSCIRC), Canterbury p. 18. 2 5 Sept. 1975. This paper discusses the effect of interaction between distributed parasitic diode action and series resistance on the gain of individual collectors in an I2L structure. Berger has shown that the effective upwards beta of multicollector 12L structures is heavily masked by parasitic diode action between the intrinsic base terminal and the emitter surface of the individual distributed NPN devices. In an operational model developed by one of us it is shown how currelrt starvation of the collectors tends to occur. This is particularly relevant to structures where three or more collectors are employed. This starvation effect can only be modelled provided that the individual parasitic diodes are interspersed in a distributed resistance network. Furthermore, it can bc shown that these diodes must be weighted according to their areas.
Supply lines for rapid integrated circuits on multilayer boards. I. LANGEm Maehrichtentectmik Elektronik 26. (2) 74 (1976), (In German). The multilaycr board is the most favourable mode of wiring rapid integrated circuits, operating voltages with respect to electric demands being supplied by way of potential planes. Their assignment is investigated and a solution for a multilayer board wiring circuits of the M ECL- 10000-series is suggested.
Bond strength of metal layers on strip line substrates. K. ~'ESrPttAL. Nachrichtentechnik-Elektronik 26, (2) 70 (1976). (In German). Substrate materials used for manufacturing integrated circuits may consist of metal layers containing
various elements or alloys. The bonding mechanism between substrate and layer is investigated and the bonding strength is calculated for some metals on a substrate. Influences on the bonding strength of the metal layer were analysed and bonding strengths necessary for the various process temperatures of the hybrid integration are mentioned.
Experimental study of the properties of the contact between semiconductor and liquid crystal layers. P. MALTESE and C. M. OTTAVi. Alta Frequenza. XLIV, (12) 727 (1975). {In Italian). The properties of the interface between a thin film of semiinsulating semiconductor (polycrystalline SnO2) and a nematic liquid crystal were studied by observing the electrooptical effect of birefringence induced by the electric field in the liquid crystal. Cells containing such an interface show strong asymmetry in the electrooptical response when reversing the applied voltage polarity. Experiments were made resulting in support to lhe hypothesis of a rectifying depletion-accumulation layer at said interface. In the field of the liquid crystal devices a new theoretical problem is introduced by the presence of such a layer and the effects of asymmetry in the optical response and of response far from the electrodes look promising for the applications.
Comparative studies of photoresist processing of microelectronics regarding chemical pollution, shortage and cost. Klyt RITCHIE and HENRY G. HUGHES. Solid State Technolo#y p, 45 (Feb. 1976), As the microelectronic industry continuously becomes more complex and sophisticated in device fabrication, photolithographic technology is faced with resolution limitations, economic considerations, pollution, and shortages of chemicals. The hitter problems are seriously affecting all phases of the semiconductor wali:r process, In this report the photoresist process is emphasized with respect to cost consideration, pollution and chemical shortages. C o m m o n l y used solvents in photoresist processing, such as esters, aromatics, and olefinic organics were replaced with saturated hydrocarbon solvents without sacrificing the photoresist performance. The solvents used were readily available during the rcccnt energy crisis as opposed to the lack of availability of those more commonly used in the industry.
Anodizing silicon is economical way to isolate IC elements. BOB CfX)K. Electronics p. 109 (Nov. 13 1975). The discovery that silicon itself can be anodized opens an unexpected path to cheaper, denser, faster integrated circuits. The lowtemperature process produces in one step the dielectric needed to isolate the active elements on a chip. thus, adding the advantages of dielectric isolation to any semiconductor technology, whether bipolar or metal-oxide semiconductor.
Integrated circuits with leads on flexible tape. A VA>, i)lR DRIVT, W. G. GELLING and A. RADEMAKERS. Solid State Technology p. 27 (Feb. 1976). Integrated circuits (IC chipsi and their various derivatives are expected to form the basic building blocks of electronics for many years to come. No effective competition has as yet appeared, and the quantity production of IC's is particularly suited to automation: computer aids are now widely used in their design and manufacture. This article presents a solution to the problem of forming the connections between the microscopic crystal chip and the full-sized world outside, in a way that is compatible with automation techniques and future It" developments for many years ahead. A flexible plastic tape, carrying a radial pattern of copper-plated leads for each IC is employed.
World Abstracts on Microelectronics and Reliability
Special report: film carriers star in high-volume IC production. JErkY LYMAN. Electronics p. 61 (Dec. 25 1975). In a move that's gathering m o m e n t u m around the world, more and more semiconductor manufacturers are adopting an automated film-carrier approach to assembling integrated-circuit packages. For the manufacturer, film carrier has meant lower production costs and high profit margins on high-volume products. For the user, it means high reliability at low prices.
High speed 12L. C. MULDER and H. E. J. WULMS. First European Solid State Circuits Co#![erenee (ESSCIRC), Canterbury p. 28. 2 5 Sept. 1975. One of the striking characteristics of present-day I"L recommended as a feature, is the compact transistor structure, where the P N P injector and N P N multi-collector transistor have been combined. In the ncw approach separate N P N and P N P transistors have been used. A new process with L O C O S and aiding field in the NPN-basc results in fast NPN transistors in saturation. With some electronic improvements a gate delay of 4 nscc has been achieved, In the isolated version (PNP bases and N P N emitters isolated from each other) analog and digital circuitry can be combined on the same chip with the additional feature that now a fast interface with saturated logic can be incorporated.
Nonsaturated integrated injection logic in circuit design. M. |. ELMASRY. First European Solid State Circuits Cot!ference (ESSCIRC), Canterbury p. 20. 2 5 Sept. 1975. Conventional IZL structures suffer from the saturation of the upward npn transistors, This saturation limits the maxim u m frequency at which the structure can operate. In order to reduce this saturation effect, it has been suggested that a d u m m y collector be added to the multicollector structure which is connected to the c o m m o n p-region base. The technique not only improves the transient performante of the structure but also provides a flexible circuit to be used in other digital applications. The effect of series resistance and distributed parasitic diode action on multicollector I:L structures. C. S. DEN BRINKE;R and A. N. MORGAN. First European Solid State Circuits Cm!/brenee (ESSCIRC), Canterbury p. 18. 2 5 Sept. 1975. This paper discusses the effect of interaction between distributed parasitic diode action and series resistance on the gain of individual collectors in an I2L structure. Berger has shown that the effective upwards beta of multicollector 12L structures is heavily masked by parasitic diode action between the intrinsic base terminal and the emitter surface of the individual distributed NPN devices. In an operational model developed by one of us it is shown how currelrt starvation of the collectors tends to occur. This is particularly relevant to structures where three or more collectors are employed. This starvation effect can only be modelled provided that the individual parasitic diodes are interspersed in a distributed resistance network. Furthermore, it can bc shown that these diodes must be weighted according to their areas.
Supply lines for rapid integrated circuits on multilayer boards. I. LANGEm Maehrichtentectmik Elektronik 26. (2) 74 (1976), (In German). The multilaycr board is the most favourable mode of wiring rapid integrated circuits, operating voltages with respect to electric demands being supplied by way of potential planes. Their assignment is investigated and a solution for a multilayer board wiring circuits of the M ECL- 10000-series is suggested.
Bond strength of metal layers on strip line substrates. K. ~'ESrPttAL. Nachrichtentechnik-Elektronik 26, (2) 70 (1976). (In German). Substrate materials used for manufacturing integrated circuits may consist of metal layers containing
various elements or alloys. The bonding mechanism between substrate and layer is investigated and the bonding strength is calculated for some metals on a substrate. Influences on the bonding strength of the metal layer were analysed and bonding strengths necessary for the various process temperatures of the hybrid integration are mentioned.
Experimental study of the properties of the contact between semiconductor and liquid crystal layers. P. MALTESE and C. M. OTTAVi. Alta Frequenza. XLIV, (12) 727 (1975). {In Italian). The properties of the interface between a thin film of semiinsulating semiconductor (polycrystalline SnO2) and a nematic liquid crystal were studied by observing the electrooptical effect of birefringence induced by the electric field in the liquid crystal. Cells containing such an interface show strong asymmetry in the electrooptical response when reversing the applied voltage polarity. Experiments were made resulting in support to lhe hypothesis of a rectifying depletion-accumulation layer at said interface. In the field of the liquid crystal devices a new theoretical problem is introduced by the presence of such a layer and the effects of asymmetry in the optical response and of response far from the electrodes look promising for the applications.
Comparative studies of photoresist processing of microelectronics regarding chemical pollution, shortage and cost. Klyt RITCHIE and HENRY G. HUGHES. Solid State Technolo#y p, 45 (Feb. 1976), As the microelectronic industry continuously becomes more complex and sophisticated in device fabrication, photolithographic technology is faced with resolution limitations, economic considerations, pollution, and shortages of chemicals. The hitter problems are seriously affecting all phases of the semiconductor wali:r process, In this report the photoresist process is emphasized with respect to cost consideration, pollution and chemical shortages. C o m m o n l y used solvents in photoresist processing, such as esters, aromatics, and olefinic organics were replaced with saturated hydrocarbon solvents without sacrificing the photoresist performance. The solvents used were readily available during the rcccnt energy crisis as opposed to the lack of availability of those more commonly used in the industry.
Anodizing silicon is economical way to isolate IC elements. BOB CfX)K. Electronics p. 109 (Nov. 13 1975). The discovery that silicon itself can be anodized opens an unexpected path to cheaper, denser, faster integrated circuits. The lowtemperature process produces in one step the dielectric needed to isolate the active elements on a chip. thus, adding the advantages of dielectric isolation to any semiconductor technology, whether bipolar or metal-oxide semiconductor.
Integrated circuits with leads on flexible tape. A VA>, i)lR DRIVT, W. G. GELLING and A. RADEMAKERS. Solid State Technology p. 27 (Feb. 1976). Integrated circuits (IC chipsi and their various derivatives are expected to form the basic building blocks of electronics for many years to come. No effective competition has as yet appeared, and the quantity production of IC's is particularly suited to automation: computer aids are now widely used in their design and manufacture. This article presents a solution to the problem of forming the connections between the microscopic crystal chip and the full-sized world outside, in a way that is compatible with automation techniques and future It" developments for many years ahead. A flexible plastic tape, carrying a radial pattern of copper-plated leads for each IC is employed.