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Hydrogen adsorption on (110) tungsten at 30 K: An atom- probe field-ion microscope study
A451 Surface Science 147 (1984) 427-432 North-Holland, Amsterdam
427
SPUTTERING AND SECONDARY ION EMISSION SUB,IECTED TO OXYGEN ION BOMBARDMENT K. I N O U E
OF Cu-Ai
ALLOYS
a n d Y. T A G A
Toyota Central Research and De~)elopment Laboratories, Inc., Nagakute, Aichi-gun, Aichi-ken 480-11, Japan Received 30 March 1984; accepted for publication 25 July 1984 Sputtering yield and positive secondary ion intensity of Cu-AI alloys were measured under oxygen ion bombardment and ionization probability was determined as a function of alloy composition. It was found that the total sputtering yield fell below the straight line connecting the sputtering yields of pure elements and the modified ionization probability of AI in the consideration for the secondary oxygen ion intensity was constant and that of Cu varied linearly with the alloy composition.
433
Surface Science 147 (1984) 433-450 North-Holland, Amsterdam NUCLEATION, GROWTH AND THE INTERMEDIATE A g / S i ( 1 0 0 ) A N D A g / S i ( l 11) M. H A N B I J C K E N
*, M. F U T A M O T O
LAYER IN
** a n d J.A, V E N A B L E S
School of Mathematical and Physical Sciences, University of Sussex, Brighton, BN1 9QH, UK Received 24 April 1984; accepted for publication 26 July 1984 The growth of Ag on Si(100)2 × 1 and Si(111)7 × 7 surfaces has been examined as a function of deposition time and substrate temperature, using an ultra high vacuum-scanning electron microscope (UHV-SEM), equipped with micro-Auger electron spectroscopy and RHEED. Ag grows on both Si surface in the layer plus island or Stranski-Krastanov growth mode. The thickness of the two-dimensional layer has been measured as 0.27__+0.03 monolayer on Si(100) in comparison with 0.63 ___0.04 monolayer on Si(l 11). The Ag island shapes and sizes, and density dependencies N(T) on substrate temperature were found to be very different in the two orientations. The N(T) data are interpreted in terms of nucleation theory, and values for the critical nucleus sizes, binding, diffusion and adsorption energies are estimated. Biassing the Si samples made it possible to visualize the intermediate Ag layer by SEM, and examples for the two systems are shown.
Surface Science 147 (1984) 451-465 North-Holland, Amsterdam HYDROGEN ADSORPTION ON (110) T U N G S T E N PROBE FIELD-ION MICROSCOPE STUDY A.T. MACRANDER
451
AT 30 K: AN A T O M -
and D.N. SEIDMAN
Cornell Unioersity. Department of Materials Science and Engineering and the Materials Science Center, Ithaca, New York 14853, USA
427
SPUTTERING AND SECONDARY ION EMISSION SUB,IECTED TO OXYGEN ION BOMBARDMENT K. I N O U E
OF Cu-Ai
ALLOYS
a n d Y. T A G A
Toyota Central Research and De~)elopment Laboratories, Inc., Nagakute, Aichi-gun, Aichi-ken 480-11, Japan Received 30 March 1984; accepted for publication 25 July 1984 Sputtering yield and positive secondary ion intensity of Cu-AI alloys were measured under oxygen ion bombardment and ionization probability was determined as a function of alloy composition. It was found that the total sputtering yield fell below the straight line connecting the sputtering yields of pure elements and the modified ionization probability of AI in the consideration for the secondary oxygen ion intensity was constant and that of Cu varied linearly with the alloy composition.
433
Surface Science 147 (1984) 433-450 North-Holland, Amsterdam NUCLEATION, GROWTH AND THE INTERMEDIATE A g / S i ( 1 0 0 ) A N D A g / S i ( l 11) M. H A N B I J C K E N
*, M. F U T A M O T O
LAYER IN
** a n d J.A, V E N A B L E S
School of Mathematical and Physical Sciences, University of Sussex, Brighton, BN1 9QH, UK Received 24 April 1984; accepted for publication 26 July 1984 The growth of Ag on Si(100)2 × 1 and Si(111)7 × 7 surfaces has been examined as a function of deposition time and substrate temperature, using an ultra high vacuum-scanning electron microscope (UHV-SEM), equipped with micro-Auger electron spectroscopy and RHEED. Ag grows on both Si surface in the layer plus island or Stranski-Krastanov growth mode. The thickness of the two-dimensional layer has been measured as 0.27__+0.03 monolayer on Si(100) in comparison with 0.63 ___0.04 monolayer on Si(l 11). The Ag island shapes and sizes, and density dependencies N(T) on substrate temperature were found to be very different in the two orientations. The N(T) data are interpreted in terms of nucleation theory, and values for the critical nucleus sizes, binding, diffusion and adsorption energies are estimated. Biassing the Si samples made it possible to visualize the intermediate Ag layer by SEM, and examples for the two systems are shown.
Surface Science 147 (1984) 451-465 North-Holland, Amsterdam HYDROGEN ADSORPTION ON (110) T U N G S T E N PROBE FIELD-ION MICROSCOPE STUDY A.T. MACRANDER
451
AT 30 K: AN A T O M -
and D.N. SEIDMAN
Cornell Unioersity. Department of Materials Science and Engineering and the Materials Science Center, Ithaca, New York 14853, USA