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Hydrogen termination study of silicon dangling bonds by electron stimulated desorption spectroscopy (TOF-ESD)
A399 Surface Science 287/288 (1993) 506-509 North-Holland
Hydrogen termination study of silicon dangling bonds by electron stimulated desorption spectroscopy (TOF-ESD) Kazuyuki Ueda and Akemi Takano Department of Applied Physics, Osaka Unioersity, Suita, Osaka 565, Japan Received 1 September 1992; accepted for publication 30 November 1992 An electron stimulated desorption spectrometer (ESD) for hydrogen study has been newly developed using a combination of a micro-channel plate (MCP) and a time-of-flight technique. It allows in situ measurements of LEED, Auger analysis, ESD and ESD ion angular distribution (ESDIAD) at the same probing point. Threshold energies of incident electrons for ESD protons were newly observed between 12 and 18 eV, ranging from 400 langmuir (L) to 1200 L atomic hydrogen, which accompanied a reconstruction from (2 × 1) to (1 x 1) on the Si(100) surface.
Surface Science 287/288 (1993) 510-513 North-Holland
Electrical impedance spectroscopy of silicon surface states Petr ViCtor 1 Institute of Mathematics and Physics (IMFUFA), Uniuersity of Roskilde, P.O. Box 260, 4000 Roskilde, Denmark
and Jan Vedde 1 Topsil Semiconductor Materials A / S , Linderupvej 4, P.O. Box 93, 3600 Frederikssund, Denmark Received 31 August 1992; accepted for publication 19 November 1992 Recently developed full, dynamical analysis of the electrical response in sem;conductors and insulators at classical frequencies makes it possible to use electrical impedance spectroscopy also in the investigations of electron surface states. The results will be presented for single crystal silicon with some experimental evidence that silicon surface states form Anderson negative U centers.
Surface Science 287/288 (1993) 514-519 North-Holland
Surface morphology of MBE-grown GaAs(001)-(2 × 4) and GaAs(001)-faceted surfaces investigated by scanning tunneling microscopy V. Bressler-Hill a,b, R. Maboudian a,b, M. Wassermeier P.M. Petroff b,c and W.H. Weinberg a,b
b,1, X._S" Wang a,b, K.
Pond b,c,
a Chemical Engineering Department, University of California, Santa Barbara, CA 93106, USA b QUEST, University of Cahfornia, Santa Barbara, CA 93106, USA c Materials Department, University of California, Santa Barbara, CA 93106. USA Received 1 September 1992; accepted for publication 8 October 1992 Scanning tunneling microscopy is used to study the morphology of nominally flat p-type (2 x 4)-reconstructed GaAs(001) and faceted n-type GaAs(001) surfaces. On the flat surfaces the effect of the MBE growth rate on the island structures was investigated. A detailed statistical analysis of the STM images of individual growths was performed to calculate the step-density and the step-length ratio of the islands. The density of the steps parallel to the dimers, A-type steps, is about twice the density of the steps perpendicular to the dimers, B-type steps. The length ratio of step A to step B was calculated to be 2.4 : 1. The images obtained on the faceted surface reveal predominantly a (2 x 4) local ordering. There is also an increased anisotropy in the local island shape in comparison to the fiat surfaces.
Hydrogen termination study of silicon dangling bonds by electron stimulated desorption spectroscopy (TOF-ESD) Kazuyuki Ueda and Akemi Takano Department of Applied Physics, Osaka Unioersity, Suita, Osaka 565, Japan Received 1 September 1992; accepted for publication 30 November 1992 An electron stimulated desorption spectrometer (ESD) for hydrogen study has been newly developed using a combination of a micro-channel plate (MCP) and a time-of-flight technique. It allows in situ measurements of LEED, Auger analysis, ESD and ESD ion angular distribution (ESDIAD) at the same probing point. Threshold energies of incident electrons for ESD protons were newly observed between 12 and 18 eV, ranging from 400 langmuir (L) to 1200 L atomic hydrogen, which accompanied a reconstruction from (2 × 1) to (1 x 1) on the Si(100) surface.
Surface Science 287/288 (1993) 510-513 North-Holland
Electrical impedance spectroscopy of silicon surface states Petr ViCtor 1 Institute of Mathematics and Physics (IMFUFA), Uniuersity of Roskilde, P.O. Box 260, 4000 Roskilde, Denmark
and Jan Vedde 1 Topsil Semiconductor Materials A / S , Linderupvej 4, P.O. Box 93, 3600 Frederikssund, Denmark Received 31 August 1992; accepted for publication 19 November 1992 Recently developed full, dynamical analysis of the electrical response in sem;conductors and insulators at classical frequencies makes it possible to use electrical impedance spectroscopy also in the investigations of electron surface states. The results will be presented for single crystal silicon with some experimental evidence that silicon surface states form Anderson negative U centers.
Surface Science 287/288 (1993) 514-519 North-Holland
Surface morphology of MBE-grown GaAs(001)-(2 × 4) and GaAs(001)-faceted surfaces investigated by scanning tunneling microscopy V. Bressler-Hill a,b, R. Maboudian a,b, M. Wassermeier P.M. Petroff b,c and W.H. Weinberg a,b
b,1, X._S" Wang a,b, K.
Pond b,c,
a Chemical Engineering Department, University of California, Santa Barbara, CA 93106, USA b QUEST, University of Cahfornia, Santa Barbara, CA 93106, USA c Materials Department, University of California, Santa Barbara, CA 93106. USA Received 1 September 1992; accepted for publication 8 October 1992 Scanning tunneling microscopy is used to study the morphology of nominally flat p-type (2 x 4)-reconstructed GaAs(001) and faceted n-type GaAs(001) surfaces. On the flat surfaces the effect of the MBE growth rate on the island structures was investigated. A detailed statistical analysis of the STM images of individual growths was performed to calculate the step-density and the step-length ratio of the islands. The density of the steps parallel to the dimers, A-type steps, is about twice the density of the steps perpendicular to the dimers, B-type steps. The length ratio of step A to step B was calculated to be 2.4 : 1. The images obtained on the faceted surface reveal predominantly a (2 x 4) local ordering. There is also an increased anisotropy in the local island shape in comparison to the fiat surfaces.