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IC simulates matched transistor pairs
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World Abstracts on Microelectronics and Reliability
IC simulatt~ matched transistor pairs. BERNARD COI.E. Electronics, p. 141 (28 October 1976). 1130 units on die are randomly paired for statistical matching; technique said to yield improved amplifiers, loggers, multipliers. The development and future of television horizontal processors. L ~ AVERY. Microelectron. and Reliah. 15, 297 (1976). In the early days of television the horizontal circuit consisted of a directly synchronised oscillator driving an output stage.With the advent of I.C.s and the development of colour television the complexity of the horizontal circuit has grown into a multifunction unit incorporating many features which would be prohibitive in terms of complexity and cost if constructed using discrete components. This paper traces the history of the horizontal circuits from the early, direct synchronised oscillators to the present day multifunction systems such as the CA3147.
A new family of monolithic A/D converter circuits and their applications. DAVID FUt.LAGAR. Microelectron. and Reliab. 15, 339 (1976). The dual slope integrating A/D converter has long been recognised as the most attractive conversion technique where high accuracy is the prime requirement. However, building a converter from readily available components such as FET switches, operational amplifiers, and logic circuits does represent a considerable design challenge. Numerous problems such as noise and zero-crossing errors will be encountered; in all probability one will end up with a circuit which may or may not perform as desired, which will be costly to build, and which will ahnost certainly have required more than nine man-months of engineering effort. An alternative approach is to use one of the monolithic or two chip circuits which have become available recently. These circuits, however, are not capable of 4½ digit performance and are very inflexible. Mixed-process de~iees gain ground. LUCINDA MATIERA. Electronics. p. 51 (28 October 1976). Bi-FET and bi-MOS linear chips invade area that was exclusively bipolar with input bias currents that are 1,000 times lower.
Memory architecture and the influence of the microprocessor. GEOFF PEPP|EI'II-:. Microelectron. and Reliab. 15, 307 (1976). In the last year the whole area of memory products has taken on a new order of importance, partly because of new technologies and products in the memory area itself, and partly becatLse of the exploding microprocessor market. Microprocessors demand bit slice orientated memories and generally do not need large capacity; as a result many 4-bit, 8-bit and even 16-bit parts have appeared. Technologies vary from bipolar Schottky to N-channel and silicon gate CMOS, depending on the ultimate parametric objective. This paper describes some of thc.-se parts, such as 4k RAMS, ROMS, PROMS and the various architectures used to optimise applications and end product Iosts.
Designing the maximum performance into bit-slice minicomputers. GERALD ]-'. MuErIIING JR. Electronics. p. 91 (30 September 1976). Bipolar bit slices arc the minicomputer designer's best bet when he must wring all-out performance from a microprocessor-based central processing unit. But it's easy to bungle a bit-slice design and end up with performance not much better than with easier-to-use and cheaper single-chip MOS processors. For the designer to squeeze the most out of the bipolar bit slice, he must construct an architecture that can be microprogrammed to achieve a high degree of parallel operations in processing data, which will significantly increase the flexibility and throughput of the computer. Equally important, he must be extremely clever in hooking up the bit-slice chips and other large-scale-integrated circuits to arrive at this ellicient architecture with minimum hardware penalty.
12L chip provides phase-locked loop for citizens' radio. Electronics p. 7E (11 November 1976). Motorola engineers in Japan do gronndwork to integrate most frequency-determining circuits on a single device.
7. SEMICONDUCTOR INTEGRATED CIRCUITS, DEVICES AND MATERIALS Measurement of concentration profile of conduction electrons in semiconductor epitaxial layers. DR. ZDENV:K TOMtAK. Tesla Eleclron. 3p76, p. 89. After briefly discussing the importance of the concentration profile charge carriers in semiconductor epitaxial layers the author describes a method used as a basis for the MKP-02 profile meter and presents some measurement results.
millimeter plus millimeter) photoconductivity measurements. The concentration dependence of the D state spectra indicates the transition from an isolated D- state to a state of an electron bound to more than one neutral donors, D,-. A [100] stress experiment reveals the effect of the donor core potential on the D- state.
New method of influencing .semiconductor surface properties. DR. IVAN AI)AMCTK and I)R. JOSEI-"SCIIROFET,. Tesla Electron. 4?76, p. 113. Various methods of controlling the properties of the semiconductor surface and the semiconductor-insulator interface are presented. The method based on forming a suitable layer or interlayer on the semiconductor surface is treated in detail. The design of an interlayer for the purpose of controlling the properties of a MIS system with a CdSe semiconducting film is also presented. The density variation of a charge captured on surface states at the SiO-CdSe interface obtained by means of Cd, Si or SixO, interlayers with thicknesses of ~ 5 nm may vary from 9110-v to 4.10 - s C c m -z. Some further practical consequences of this method are described as well.
Stable and unstable surface state charge in thermally oxidised silicon. D. J. BREED and R. P. KRAMER. Solid-St. Electron. 19, 897 (1976). Two types of instabilities in MOS devices, occurring under the influence of a negative voltage bias on the metal electrode, can be observed by cooling under bias, from a temperature at which the bias was applied, to 77 K. In this paper we report on these effects as a function of oxidation temperature and ambient and of annealing treatments. The results suggest that the centrcs causing these instabilities are related to the eentres causing the fixed oxide charge. It will bc shown that the fast interface state density and the amount of fixed oxide charge depend on the low-temperature annealing conditions as well as on the geometry of the Alnminum-gate. This may explain the discrepancy found in the literature about the value of the fixed oxide charge as a function of oxidation temperature.
D- state in silicon. M. TANIGUCHI and S. NARITA. Solid-St. Commun. 20, 131 (1976). D state in phosphorus-doped silicon has been studied by means of long-wavelength (sub-
A method for investigation of fluctuations in doping concentration and minority-carrier diffusion length in semiconduc-
World Abstracts on Microelectronics and Reliability
IC simulatt~ matched transistor pairs. BERNARD COI.E. Electronics, p. 141 (28 October 1976). 1130 units on die are randomly paired for statistical matching; technique said to yield improved amplifiers, loggers, multipliers. The development and future of television horizontal processors. L ~ AVERY. Microelectron. and Reliah. 15, 297 (1976). In the early days of television the horizontal circuit consisted of a directly synchronised oscillator driving an output stage.With the advent of I.C.s and the development of colour television the complexity of the horizontal circuit has grown into a multifunction unit incorporating many features which would be prohibitive in terms of complexity and cost if constructed using discrete components. This paper traces the history of the horizontal circuits from the early, direct synchronised oscillators to the present day multifunction systems such as the CA3147.
A new family of monolithic A/D converter circuits and their applications. DAVID FUt.LAGAR. Microelectron. and Reliab. 15, 339 (1976). The dual slope integrating A/D converter has long been recognised as the most attractive conversion technique where high accuracy is the prime requirement. However, building a converter from readily available components such as FET switches, operational amplifiers, and logic circuits does represent a considerable design challenge. Numerous problems such as noise and zero-crossing errors will be encountered; in all probability one will end up with a circuit which may or may not perform as desired, which will be costly to build, and which will ahnost certainly have required more than nine man-months of engineering effort. An alternative approach is to use one of the monolithic or two chip circuits which have become available recently. These circuits, however, are not capable of 4½ digit performance and are very inflexible. Mixed-process de~iees gain ground. LUCINDA MATIERA. Electronics. p. 51 (28 October 1976). Bi-FET and bi-MOS linear chips invade area that was exclusively bipolar with input bias currents that are 1,000 times lower.
Memory architecture and the influence of the microprocessor. GEOFF PEPP|EI'II-:. Microelectron. and Reliab. 15, 307 (1976). In the last year the whole area of memory products has taken on a new order of importance, partly because of new technologies and products in the memory area itself, and partly becatLse of the exploding microprocessor market. Microprocessors demand bit slice orientated memories and generally do not need large capacity; as a result many 4-bit, 8-bit and even 16-bit parts have appeared. Technologies vary from bipolar Schottky to N-channel and silicon gate CMOS, depending on the ultimate parametric objective. This paper describes some of thc.-se parts, such as 4k RAMS, ROMS, PROMS and the various architectures used to optimise applications and end product Iosts.
Designing the maximum performance into bit-slice minicomputers. GERALD ]-'. MuErIIING JR. Electronics. p. 91 (30 September 1976). Bipolar bit slices arc the minicomputer designer's best bet when he must wring all-out performance from a microprocessor-based central processing unit. But it's easy to bungle a bit-slice design and end up with performance not much better than with easier-to-use and cheaper single-chip MOS processors. For the designer to squeeze the most out of the bipolar bit slice, he must construct an architecture that can be microprogrammed to achieve a high degree of parallel operations in processing data, which will significantly increase the flexibility and throughput of the computer. Equally important, he must be extremely clever in hooking up the bit-slice chips and other large-scale-integrated circuits to arrive at this ellicient architecture with minimum hardware penalty.
12L chip provides phase-locked loop for citizens' radio. Electronics p. 7E (11 November 1976). Motorola engineers in Japan do gronndwork to integrate most frequency-determining circuits on a single device.
7. SEMICONDUCTOR INTEGRATED CIRCUITS, DEVICES AND MATERIALS Measurement of concentration profile of conduction electrons in semiconductor epitaxial layers. DR. ZDENV:K TOMtAK. Tesla Eleclron. 3p76, p. 89. After briefly discussing the importance of the concentration profile charge carriers in semiconductor epitaxial layers the author describes a method used as a basis for the MKP-02 profile meter and presents some measurement results.
millimeter plus millimeter) photoconductivity measurements. The concentration dependence of the D state spectra indicates the transition from an isolated D- state to a state of an electron bound to more than one neutral donors, D,-. A [100] stress experiment reveals the effect of the donor core potential on the D- state.
New method of influencing .semiconductor surface properties. DR. IVAN AI)AMCTK and I)R. JOSEI-"SCIIROFET,. Tesla Electron. 4?76, p. 113. Various methods of controlling the properties of the semiconductor surface and the semiconductor-insulator interface are presented. The method based on forming a suitable layer or interlayer on the semiconductor surface is treated in detail. The design of an interlayer for the purpose of controlling the properties of a MIS system with a CdSe semiconducting film is also presented. The density variation of a charge captured on surface states at the SiO-CdSe interface obtained by means of Cd, Si or SixO, interlayers with thicknesses of ~ 5 nm may vary from 9110-v to 4.10 - s C c m -z. Some further practical consequences of this method are described as well.
Stable and unstable surface state charge in thermally oxidised silicon. D. J. BREED and R. P. KRAMER. Solid-St. Electron. 19, 897 (1976). Two types of instabilities in MOS devices, occurring under the influence of a negative voltage bias on the metal electrode, can be observed by cooling under bias, from a temperature at which the bias was applied, to 77 K. In this paper we report on these effects as a function of oxidation temperature and ambient and of annealing treatments. The results suggest that the centrcs causing these instabilities are related to the eentres causing the fixed oxide charge. It will bc shown that the fast interface state density and the amount of fixed oxide charge depend on the low-temperature annealing conditions as well as on the geometry of the Alnminum-gate. This may explain the discrepancy found in the literature about the value of the fixed oxide charge as a function of oxidation temperature.
D- state in silicon. M. TANIGUCHI and S. NARITA. Solid-St. Commun. 20, 131 (1976). D state in phosphorus-doped silicon has been studied by means of long-wavelength (sub-
A method for investigation of fluctuations in doping concentration and minority-carrier diffusion length in semiconduc-