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Image potential effects for low and high energy electrons
A313 Surface Science 251/252 (1991) 115-118 North-Holland
115
Influence of the surface treatments by multipolar plasma on the slow state tunnel kinetics at the In 0.saGa0.47As/Si 3N4 interfaces J.M. L6pez-Villegas a, A. Comet a, J.R. Morante a, M. Renaud b and P. Boher t; a C?ztedra d'Electrbnica, Facultat de Fisica, Universitat de Barcelona, Av. Diagonal 645, Barcelona 08028, Spain b Laboratoires d'Electronique Philips (LEP), 3 Avenue Descartes, F-94451 LimeiI-Br~vannes Cedex, France Received 1 October 1990; accepted for publication 3 January 1991 In this work a study of the capture and emission kinetics related to the slow interface states present in In0.53Ga0.47As/Si3N4 interfaces on MIS (metal-insulator-semiconductor) structures is reported. These states are found to be filled by electrons from the semiconductor conduction band by means of a tunnel mechanism. On the other hand, charge tunnel emission from the slow states takes place through the fast interface states energetically located in the semiconductor bandgap. The influence of surface plasma treatments on the slow state kinetics has been analyzed. The results indicate a different nature and electrical behaviour of the slow interface states when they are located in the native oxide layer or in the sificon nitride. The surface treatments allow us to eliminate completely the slow states related to the native oxide and to reduce significantly the density of slow states in the silicon nitride.
Surface Science 251/252 (1991) 119-126 North-Holland
119
Image potential effects for low and high energy electrons P.M. Echenique Departamento de Fisica de Materiales, Facultad de Qulmica, Universidad del Pais Vasco / Euskal Herriko Unibertsitatea, Apdo. 1072, 20008 San Sebasti,~n, Spain
F. Flores Departamento de Fisica de la Materia Condensada (C-12), Universidad Autbnoma de Madrid, E-28049 Madrid, Spain
and R.H. Ritchie Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, TN 37831-6123, USA and Department of Physics, University of Tennessee, Knoxville, TN 37996, USA Received 1 October 1990; accepted for publication 23 January 1991 Developments in the theory of the image potential of charged particles moving near condensed matter surfaces are sketched. Some applications to electrons, (i) localized in image potential states, (ii) tunneling across a gap between two metals, (iii) localized in fast microprobe beams, are considered.
Surface Science 251/252 (1991) 127-131 North-Holland
127
Study of alkali metal adsorption on reconstructed and unreconstructed Cu surfaces by HREELS P. Rudolf, C. Astaldi, G. Cautero and S. Modesti 1 Laboratorio TASC-1NFM, Padriciano 99, 1-34012 Trieste, Italy Received 1 October 1990; accepted for publication 9 December 1990 The study of the stretching mode of Li, Na and K on various Cu surfaces show that the force constant of the adsorbate-surface bond depends neither on coverage nor substantially on the particular type of alkali atom. On the Cu(110) surface the spectra also infer that the (1 × 2) reconstruction may be induced by a local coverage less than 0.03 monolayers.
115
Influence of the surface treatments by multipolar plasma on the slow state tunnel kinetics at the In 0.saGa0.47As/Si 3N4 interfaces J.M. L6pez-Villegas a, A. Comet a, J.R. Morante a, M. Renaud b and P. Boher t; a C?ztedra d'Electrbnica, Facultat de Fisica, Universitat de Barcelona, Av. Diagonal 645, Barcelona 08028, Spain b Laboratoires d'Electronique Philips (LEP), 3 Avenue Descartes, F-94451 LimeiI-Br~vannes Cedex, France Received 1 October 1990; accepted for publication 3 January 1991 In this work a study of the capture and emission kinetics related to the slow interface states present in In0.53Ga0.47As/Si3N4 interfaces on MIS (metal-insulator-semiconductor) structures is reported. These states are found to be filled by electrons from the semiconductor conduction band by means of a tunnel mechanism. On the other hand, charge tunnel emission from the slow states takes place through the fast interface states energetically located in the semiconductor bandgap. The influence of surface plasma treatments on the slow state kinetics has been analyzed. The results indicate a different nature and electrical behaviour of the slow interface states when they are located in the native oxide layer or in the sificon nitride. The surface treatments allow us to eliminate completely the slow states related to the native oxide and to reduce significantly the density of slow states in the silicon nitride.
Surface Science 251/252 (1991) 119-126 North-Holland
119
Image potential effects for low and high energy electrons P.M. Echenique Departamento de Fisica de Materiales, Facultad de Qulmica, Universidad del Pais Vasco / Euskal Herriko Unibertsitatea, Apdo. 1072, 20008 San Sebasti,~n, Spain
F. Flores Departamento de Fisica de la Materia Condensada (C-12), Universidad Autbnoma de Madrid, E-28049 Madrid, Spain
and R.H. Ritchie Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, TN 37831-6123, USA and Department of Physics, University of Tennessee, Knoxville, TN 37996, USA Received 1 October 1990; accepted for publication 23 January 1991 Developments in the theory of the image potential of charged particles moving near condensed matter surfaces are sketched. Some applications to electrons, (i) localized in image potential states, (ii) tunneling across a gap between two metals, (iii) localized in fast microprobe beams, are considered.
Surface Science 251/252 (1991) 127-131 North-Holland
127
Study of alkali metal adsorption on reconstructed and unreconstructed Cu surfaces by HREELS P. Rudolf, C. Astaldi, G. Cautero and S. Modesti 1 Laboratorio TASC-1NFM, Padriciano 99, 1-34012 Trieste, Italy Received 1 October 1990; accepted for publication 9 December 1990 The study of the stretching mode of Li, Na and K on various Cu surfaces show that the force constant of the adsorbate-surface bond depends neither on coverage nor substantially on the particular type of alkali atom. On the Cu(110) surface the spectra also infer that the (1 × 2) reconstruction may be induced by a local coverage less than 0.03 monolayers.