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In situ RHEED observation of selective diminution at Si(001)-2 × 1 superlattice spots during MBE
A466 Surface Science 174 (1986) 651-657 North-Holland, A m s t e r d a m
651
RHEED INTENSITY OSCILLATIONS DURING SILICON MBE GROWTH T. SAKAMOTO, N.J. KAWAI, T. NAKAGAWA, K. OHTA and T. KOJIMA Electrotechnical Laboratory, 1-1-4, Umezono, Sakura, Niihari, Ibaraki 305, Japan
and G. HASHIGUCHI Chuo University, 1-13-27, Kasuga, Bunkyo-ku, Tokyo 112, Japan Received 2 August 1985; accepted for publication 15 November 1985 Reflection high-energy electron diffraction ( R H E E D ) intensity oscillations during Si molecular beam epitaxy (MBE) were observed for the first time. Stable oscillations were observed only after pre-heating treatments. The substrate temperatures for the oscillation were from as low as room temperature to 1000 o C. One period of the oscillation corresponds to atomic-layer or biatomic-layer growth on the concerned surface. Oscillation of more than 2200 periods ( = 6000 ,~) was observed.
658
Surface Science 174 (1986) 658-665 North-Holland, A m s t e r d a m
IN SITU RHEED OBSERVATION OF SELECTIVE DIMINUTION AT Si(001)-2 × 1 SUPERLATI'ICE SPOTS DURING MBE Naoaki AIZAKI and Toru TATSUMI Fundamental Research Laboratories, NEC Corporation, 4-1-1, Miyazaki, Miyamae-ku, Kawasaki 213, Japan Received 30 July 1985; accepted for publication 11 November 1985 Selective diminution in the R H E E D pattern from Si(001)-2 × 1 reconstructed surface has been observed during growth for the first time. On slightly tilted (001) substrates, only one series of spots corresponding to the one domain of reconstructed surface vanished. The dependence on substrate temperature or growth rate was examined. To explain this asymmetric phenomenon, two models were proposed, a two-monolayer growth model and an atom-flow model.
666
Surface Science 174 (1986) 666-670 North-Holland, A m s t e r d a m
IMPROVEMENT OF THE QUALITY OF Ge FILMS ON CaF2/Si(III ) STRUCTURES BY PREDEPOSITED THIN Ge LAYERS Seigo KANEMARU, Hiroshi ISHIWARA, Tanemasa ASANO and Seijiro FURUKAWA Graduate School of Science and Engineering, Tokyo Institute of Technology, Nagatsuda, Midoriku, Yokohama 227, Japan Received 1 August 1985; accepted for publication 13 September 1985 Heteroepitaxial growth of Ge films on C a F 2 / S i structures with thin Ge layers predeposited at room temperature was investigated. It has been shown from morphological and ion channeling studies that the predeposited thin Ge layer is useful to improve the surface smoothness and crystalline quality of the Ge films. The best value of the channeling m i n i m u m yield of Ge films was 3.4%.
651
RHEED INTENSITY OSCILLATIONS DURING SILICON MBE GROWTH T. SAKAMOTO, N.J. KAWAI, T. NAKAGAWA, K. OHTA and T. KOJIMA Electrotechnical Laboratory, 1-1-4, Umezono, Sakura, Niihari, Ibaraki 305, Japan
and G. HASHIGUCHI Chuo University, 1-13-27, Kasuga, Bunkyo-ku, Tokyo 112, Japan Received 2 August 1985; accepted for publication 15 November 1985 Reflection high-energy electron diffraction ( R H E E D ) intensity oscillations during Si molecular beam epitaxy (MBE) were observed for the first time. Stable oscillations were observed only after pre-heating treatments. The substrate temperatures for the oscillation were from as low as room temperature to 1000 o C. One period of the oscillation corresponds to atomic-layer or biatomic-layer growth on the concerned surface. Oscillation of more than 2200 periods ( = 6000 ,~) was observed.
658
Surface Science 174 (1986) 658-665 North-Holland, A m s t e r d a m
IN SITU RHEED OBSERVATION OF SELECTIVE DIMINUTION AT Si(001)-2 × 1 SUPERLATI'ICE SPOTS DURING MBE Naoaki AIZAKI and Toru TATSUMI Fundamental Research Laboratories, NEC Corporation, 4-1-1, Miyazaki, Miyamae-ku, Kawasaki 213, Japan Received 30 July 1985; accepted for publication 11 November 1985 Selective diminution in the R H E E D pattern from Si(001)-2 × 1 reconstructed surface has been observed during growth for the first time. On slightly tilted (001) substrates, only one series of spots corresponding to the one domain of reconstructed surface vanished. The dependence on substrate temperature or growth rate was examined. To explain this asymmetric phenomenon, two models were proposed, a two-monolayer growth model and an atom-flow model.
666
Surface Science 174 (1986) 666-670 North-Holland, A m s t e r d a m
IMPROVEMENT OF THE QUALITY OF Ge FILMS ON CaF2/Si(III ) STRUCTURES BY PREDEPOSITED THIN Ge LAYERS Seigo KANEMARU, Hiroshi ISHIWARA, Tanemasa ASANO and Seijiro FURUKAWA Graduate School of Science and Engineering, Tokyo Institute of Technology, Nagatsuda, Midoriku, Yokohama 227, Japan Received 1 August 1985; accepted for publication 13 September 1985 Heteroepitaxial growth of Ge films on C a F 2 / S i structures with thin Ge layers predeposited at room temperature was investigated. It has been shown from morphological and ion channeling studies that the predeposited thin Ge layer is useful to improve the surface smoothness and crystalline quality of the Ge films. The best value of the channeling m i n i m u m yield of Ge films was 3.4%.