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silicon interfaces
All1 Surface Science 168 (1986) 68-73 North-Holland, Amsterdam
ELECTRONIC PROPERTIES OF THE InP(100) SURFACE J.M. MOISON and M. BENSOUSSAN Centre National d'Etudes des TOlOcommunications, Laboratoire de Bagneux. 190, rue de Paris, F-92220 Bagneux, France Received 10 June 1985; accepted for publication 12 July 1985
We report a first investigation of the structural and electronic properties of InP(l(){}). Through an adequate preparation, a clean surface with a ( 4 x 2 ) reconstruction is obtained. UPS and ELS studies of this surface, with in-situ reference to the (110) cleaved surface, reveal large densities of gap surface states, both near the conduction and the valence bands. A small density of mid-gap surface states strongly pins the Fermi level. Measurements of the surface recombination velocity by photoluminescence show that they also act as surface traps. It is concluded that the lnP(100) surface is very similar to perturbed (110) surfaces and is rough on a microscopic scale.
Surface Science 168 (1986) 74~99 North-Holland, A m s t e r d a m
INITIAL FORMATION PROCESS OF METAL/SILICON INTERFACES Akio H I R A K I Faculty of En£,ineerin~. Osaka University, Suita. Osaka, Japan Reccived 10 June 1985: accepted for publication 4 September 1985
When Si is in contact with a metal film. it readily reacts at low temperatures (~200°C). These low-temperature interracial reactions lead to several interesting effects. Some examples arc the growth of a thick (=100(i A) SiC> hlycr in a short time ( ~ Ill rain) and silicidc formation at metal/St interfaces. Questions arise as to how St. a typical covalcnt crystal of high inching point, so easily reacts with metals and as lo the mechanism of the interracial reaction. In this respect, the initial formation process of metal/St interfaces is of great help to pursue the mechanism of mctaI-Si intcrfacial reactions. For example, it is known that Pd-dcposition onto St( 111 ) surface induces epitaxial silicide and the interfacc is atomically abrupt. Also, scvcral experiments have shown that the epitaxial silicidc grows not from the initial stage but through the conversion of an amorphous intcrface It) it crystalline (or cpitaxial) one - the amorphous interface is al first produced by the Pd-deposition. The mechanisms of low-temperature metal Si interactions arc discussed here, on the basis of experimental facts on the lot-marion process of mctal/Si interfaces.
ELECTRONIC PROPERTIES OF THE InP(100) SURFACE J.M. MOISON and M. BENSOUSSAN Centre National d'Etudes des TOlOcommunications, Laboratoire de Bagneux. 190, rue de Paris, F-92220 Bagneux, France Received 10 June 1985; accepted for publication 12 July 1985
We report a first investigation of the structural and electronic properties of InP(l(){}). Through an adequate preparation, a clean surface with a ( 4 x 2 ) reconstruction is obtained. UPS and ELS studies of this surface, with in-situ reference to the (110) cleaved surface, reveal large densities of gap surface states, both near the conduction and the valence bands. A small density of mid-gap surface states strongly pins the Fermi level. Measurements of the surface recombination velocity by photoluminescence show that they also act as surface traps. It is concluded that the lnP(100) surface is very similar to perturbed (110) surfaces and is rough on a microscopic scale.
Surface Science 168 (1986) 74~99 North-Holland, A m s t e r d a m
INITIAL FORMATION PROCESS OF METAL/SILICON INTERFACES Akio H I R A K I Faculty of En£,ineerin~. Osaka University, Suita. Osaka, Japan Reccived 10 June 1985: accepted for publication 4 September 1985
When Si is in contact with a metal film. it readily reacts at low temperatures (~200°C). These low-temperature interracial reactions lead to several interesting effects. Some examples arc the growth of a thick (=100(i A) SiC> hlycr in a short time ( ~ Ill rain) and silicidc formation at metal/St interfaces. Questions arise as to how St. a typical covalcnt crystal of high inching point, so easily reacts with metals and as lo the mechanism of the interracial reaction. In this respect, the initial formation process of metal/St interfaces is of great help to pursue the mechanism of mctaI-Si intcrfacial reactions. For example, it is known that Pd-dcposition onto St( 111 ) surface induces epitaxial silicide and the interfacc is atomically abrupt. Also, scvcral experiments have shown that the epitaxial silicidc grows not from the initial stage but through the conversion of an amorphous intcrface It) it crystalline (or cpitaxial) one - the amorphous interface is al first produced by the Pd-deposition. The mechanisms of low-temperature metal Si interactions arc discussed here, on the basis of experimental facts on the lot-marion process of mctal/Si interfaces.