- Email: [email protected]
InP MBE without toxic gases
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TfiQ.i.t Semicomluetor has introduced three additional devices to its growing line of system timing products: GAI085, GA1087, and GAI088. these devices operate from 24 MHz up to 105 MHz and support many different processor families including R4000, 486, Pentium, and compatible processors. Applications include: high-frequency clock generation and lowskew clock distribution for high-speed systems; uni-processor PCs and workstations as welt as servers. (See also page 6). • Contact." Mr Sunil Sanghavi, TriQuint Semiconductor, 2300 Owen Street, Santa Clara, CA 95054 USA. Tel~fax: [ I ] (408) 982-0900. 982-0222.
O K I e n t e r s c o m m IC market Oki Semiconductor, Sunnyvale, CA, USA, will introduce a new family of ICs for cellular, FO and IR comms applications which include G a A s digital devices, and be introduced to the North American market this year. Products will fall into three categories and the first product in the series will be a GaAs FET MMIC, broadband feedback, AGC amplifier.
N E C m m - w a v e IC News from Japan - N E C Corp. has integrated all the functions necessary for amplifying and transmitting signals in the mm-wave band on a single chip. A prototype is said to be able to amplify a 60 G H z signal to 37.2 mW sufficient for wireless comms, for example. It combines transistors and c a p a c i t o r s on a G a A s substrate measuring 1.15mm square and was developed in cooperation with Yoko-
hama-based Advanced Millimeter Wave Technologies ( o . This semiprivate research body intends to build lhe chip into equipment and begin communications experiments within lwo years.
I n P M B E w i t h o u t toxic gases EPI MBE Products Group has introduced a new system for production of phosphides by solid source MBE - the Model 1040P, which was developed with the assistance of researchers from the Fraunhofer-Institut IAF, G e r m a n y , and two US labs. It accepts substrates up to 4"/100 mm dia.. and can be configured for use in either research or production environments. Recent improvements in the design of the EPI Phosphorus Valved Cracker allow load-locking (for refilling without breaking vacuum), making the source even more comparable to gas-based technology. Particular lea-
Lures ol the tlC'+', ',','~lelli ~lRit.id. extensp+c I.N~ cr}op,uR:th~g ]-, u,,,,.,c in the 1040P S3.stem >; p n v v i d e the maximum possible dFllOutll O( COR! trapping surface arc,~, tti addition, tlR substrate heatermantpuhttor has spc cial shielding to prevent build-up ul phosphorus-deposits ,+t+ cril~ca] B/it.ing. This shield at,,,, include.,, al; integral UHV coaxial heate! + asseln bly to provide un "internal bakeout" of the naanipulator hod\ during system bakeout to rcm{}vc phosphide deposit,, and t,> tl+rthct prcvct]t deposit~ from Ibrnm W Also. u tubon]oleculur pump. which include.,, a specially dcveloped forelinc chcnusorpt]on phosphorus trap and or a forcline 1,N: trap, isolated with valves and bypass !mcs to I'acilitalc removal for exchange cleaning without interrupting turbo-pump operation. We hope to publish a fuller reporl on tiff,', nev~r system itt ,~ur next issue • ('onlact: Paul ('+,h,mhr,, EPI (+o Iombo. EPI M B E Producls Group. 129(I Hammond Road+ 3;aml Puu/. M N 55110. USA. Tel l~+v+ / l / +612
inlo:o cpimhc.com.
Sapphire wafers Ultraflat sapphire \~afers lbr carrier discs for the deposition and processing of thin films m manufacturing semiconductor deviccs are a~ailablc from Meller Optics. Inc. of Providence. Rhode Island. U S A They feature l]atness to 5 l'ringes of He NE and parallelism from 2{l sec to 1 sec with _+_1.2 microns pieceqopiece thickness uniformity per lot. Allowing mounting, lapping, polishing, etching, and final dicing of GaAs. Si and other crystals, they are ideal lbr manufacturing semiconductor devices. Available in sizes from 50 mm to 82 mm dia. with thicknesses from .5 mm to 3mm, and thickness toler ances tu ~- 1...") microns piece-to-piece thickness uniformity per lot. • Contact. Meller Optic.< Ira.. David Lvdon. International Marketing, 12# ('orlis.~ St. t' 0 Box 6001, Providence, RI 02940. USA. Tel/a v: / 1 / "401, 331 37170519.
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Page4 I
[Vol7 No2
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~;'~:#;::+'~gg@~t... :~::~i!:iii!:i:ii~i:i{~51:::i%i:::!iii~i:~!:i:;:;:i:~!~ ......................... ~iii ::~:i:::~ :: . ::. . . . :............. ~+~ ........................................
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:~::m~ ::~!~~i~}i ~ ::~~'.g~::~i~ ~~ , : +~i ~ :#: :~~ ~i: ~ :i~-~ ~::{~!g~::~-~+i~i~-~ g % ~ ~:~ ~,+~ ~ ~:~ ~ ~:~:<~r~ m~:<~ ~:m:~~:~:~:~*~:~. ~+~e~ ~{E~ '.'.~:~r+~. ~+~E<~:~+ '.'.~ ~ .....
+.
1
+
:
TfiQ.i.t Semicomluetor has introduced three additional devices to its growing line of system timing products: GAI085, GA1087, and GAI088. these devices operate from 24 MHz up to 105 MHz and support many different processor families including R4000, 486, Pentium, and compatible processors. Applications include: high-frequency clock generation and lowskew clock distribution for high-speed systems; uni-processor PCs and workstations as welt as servers. (See also page 6). • Contact." Mr Sunil Sanghavi, TriQuint Semiconductor, 2300 Owen Street, Santa Clara, CA 95054 USA. Tel~fax: [ I ] (408) 982-0900. 982-0222.
O K I e n t e r s c o m m IC market Oki Semiconductor, Sunnyvale, CA, USA, will introduce a new family of ICs for cellular, FO and IR comms applications which include G a A s digital devices, and be introduced to the North American market this year. Products will fall into three categories and the first product in the series will be a GaAs FET MMIC, broadband feedback, AGC amplifier.
N E C m m - w a v e IC News from Japan - N E C Corp. has integrated all the functions necessary for amplifying and transmitting signals in the mm-wave band on a single chip. A prototype is said to be able to amplify a 60 G H z signal to 37.2 mW sufficient for wireless comms, for example. It combines transistors and c a p a c i t o r s on a G a A s substrate measuring 1.15mm square and was developed in cooperation with Yoko-
hama-based Advanced Millimeter Wave Technologies ( o . This semiprivate research body intends to build lhe chip into equipment and begin communications experiments within lwo years.
I n P M B E w i t h o u t toxic gases EPI MBE Products Group has introduced a new system for production of phosphides by solid source MBE - the Model 1040P, which was developed with the assistance of researchers from the Fraunhofer-Institut IAF, G e r m a n y , and two US labs. It accepts substrates up to 4"/100 mm dia.. and can be configured for use in either research or production environments. Recent improvements in the design of the EPI Phosphorus Valved Cracker allow load-locking (for refilling without breaking vacuum), making the source even more comparable to gas-based technology. Particular lea-
Lures ol the tlC'+', ',','~lelli ~lRit.id. extensp+c I.N~ cr}op,uR:th~g ]-, u,,,,.,c in the 1040P S3.stem >; p n v v i d e the maximum possible dFllOutll O( COR! trapping surface arc,~, tti addition, tlR substrate heatermantpuhttor has spc cial shielding to prevent build-up ul phosphorus-deposits ,+t+ cril~ca] B/it.ing. This shield at,,,, include.,, al; integral UHV coaxial heate! + asseln bly to provide un "internal bakeout" of the naanipulator hod\ during system bakeout to rcm{}vc phosphide deposit,, and t,> tl+rthct prcvct]t deposit~ from Ibrnm W Also. u tubon]oleculur pump. which include.,, a specially dcveloped forelinc chcnusorpt]on phosphorus trap and or a forcline 1,N: trap, isolated with valves and bypass !mcs to I'acilitalc removal for exchange cleaning without interrupting turbo-pump operation. We hope to publish a fuller reporl on tiff,', nev~r system itt ,~ur next issue • ('onlact: Paul ('+,h,mhr,, EPI (+o Iombo. EPI M B E Producls Group. 129(I Hammond Road+ 3;aml Puu/. M N 55110. USA. Tel l~+v+ / l / +612
inlo:o cpimhc.com.
Sapphire wafers Ultraflat sapphire \~afers lbr carrier discs for the deposition and processing of thin films m manufacturing semiconductor deviccs are a~ailablc from Meller Optics. Inc. of Providence. Rhode Island. U S A They feature l]atness to 5 l'ringes of He NE and parallelism from 2{l sec to 1 sec with _+_1.2 microns pieceqopiece thickness uniformity per lot. Allowing mounting, lapping, polishing, etching, and final dicing of GaAs. Si and other crystals, they are ideal lbr manufacturing semiconductor devices. Available in sizes from 50 mm to 82 mm dia. with thicknesses from .5 mm to 3mm, and thickness toler ances tu ~- 1...") microns piece-to-piece thickness uniformity per lot. • Contact. Meller Optic.< Ira.. David Lvdon. International Marketing, 12# ('orlis.~ St. t' 0 Box 6001, Providence, RI 02940. USA. Tel/a v: / 1 / "401, 331 37170519.
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Page4 I
[Vol7 No2