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Interdiffusion of Si in Pd and Pd2Si at room temperature
A459 St. BOCHLER, Xin-nan Y U Laboratorium ]`tit FestkiJrperphysik, ETHZ, CH-8093 Ziirich, Switzerland
M. E R B U D A K lnstitut fiir Angewandte Physik, ETHZ, CH-8093 Ziirich, Switzerland
L. SCHLAPBACH Laboratorium ]'fir FestkiJrperphysik, ETHZ, CH-8093 Ziirich, Switzerland
and A. BALKER Technisch-Chemisches Laboratorium, ETHZ, CH-8092 Ziirich, Switzerland Received 23 March 1987; accepted for pubhcation 15 April 1987 The effect of oxygen and hydrogen on the surface segretation of amorphous and crystalline alloys of Zr were analyzed by means of AES, XPS, and UPS. Amorphous Cu70Zr30 alloys with high oxygen content showed a very pronounced unexpected Cu enrichment at the surface after annealing at 473 K in H 2 atmosphere.
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Surface Science 189/190 (1987) 1122-1128 North-Holland, Amsterdam
I N T E R D I F F U S I O N OF Si IN Pd A N D P d z S i AT R O O M T E M P E R A T U R E A.J. BRUNNER *, P. OELHAFEN and H.-J. GONTHERODT Institut ]'ur Physik, Universitiit Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland Received 26 March 1987; accepted for publication 6 May 1987 We have investigated the formation of the Si enriched surface layer on top of a 200 nm Pd and of a 50 nm Pd2Si film on Si(100) substrates with X-ray photoelectron spectroscopy (XPS) under ultrahigh vacuum (UHV) conditions at room temperature (RT). The increase in the Si concentration at the surface is consistent with parabolic kinetics and the amount of increase in Pd and Pd2Si is comparable. We have not found any indication that under UHV segregation of Pd2Si contributes significantly to the formation of the surface layer. Exposure to oxygen or air will produce a complex, segregated surface layer in Pd and in Pd2Si.
Surface Science 189/190 (1987) 1129-1134 North-Holland, Amsterdam
THE T E M P E R A T U R E ! D E P E N D E N C E OF T H E S U R F A C E C O M P O S I T I O N OF P t - R h A L L O Y S F.C.M.J.M. VAN DELFT Gorlaeus Laboratories, Leiden University, P.O. Box 9502, 2300 RA Leiden, The Netherlands
A.D. VAN LANGEVELD Department of Technical Physics, Technical University Eindhoven, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
and
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M. E R B U D A K lnstitut fiir Angewandte Physik, ETHZ, CH-8093 Ziirich, Switzerland
L. SCHLAPBACH Laboratorium ]'fir FestkiJrperphysik, ETHZ, CH-8093 Ziirich, Switzerland
and A. BALKER Technisch-Chemisches Laboratorium, ETHZ, CH-8092 Ziirich, Switzerland Received 23 March 1987; accepted for pubhcation 15 April 1987 The effect of oxygen and hydrogen on the surface segretation of amorphous and crystalline alloys of Zr were analyzed by means of AES, XPS, and UPS. Amorphous Cu70Zr30 alloys with high oxygen content showed a very pronounced unexpected Cu enrichment at the surface after annealing at 473 K in H 2 atmosphere.
1122
Surface Science 189/190 (1987) 1122-1128 North-Holland, Amsterdam
I N T E R D I F F U S I O N OF Si IN Pd A N D P d z S i AT R O O M T E M P E R A T U R E A.J. BRUNNER *, P. OELHAFEN and H.-J. GONTHERODT Institut ]'ur Physik, Universitiit Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland Received 26 March 1987; accepted for publication 6 May 1987 We have investigated the formation of the Si enriched surface layer on top of a 200 nm Pd and of a 50 nm Pd2Si film on Si(100) substrates with X-ray photoelectron spectroscopy (XPS) under ultrahigh vacuum (UHV) conditions at room temperature (RT). The increase in the Si concentration at the surface is consistent with parabolic kinetics and the amount of increase in Pd and Pd2Si is comparable. We have not found any indication that under UHV segregation of Pd2Si contributes significantly to the formation of the surface layer. Exposure to oxygen or air will produce a complex, segregated surface layer in Pd and in Pd2Si.
Surface Science 189/190 (1987) 1129-1134 North-Holland, Amsterdam
THE T E M P E R A T U R E ! D E P E N D E N C E OF T H E S U R F A C E C O M P O S I T I O N OF P t - R h A L L O Y S F.C.M.J.M. VAN DELFT Gorlaeus Laboratories, Leiden University, P.O. Box 9502, 2300 RA Leiden, The Netherlands
A.D. VAN LANGEVELD Department of Technical Physics, Technical University Eindhoven, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
and
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