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International conference on silican carbide — 1968
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NEWS, REPORTS AND ANNOUNCEMENTS
INTERNATIONAL SYMPOSIUM ON THE REACTIVITY OF SOLIDS Schenectady, New York, August 25—30, 1968 The 6th International Symposium on the Reactivity of Solids will be held at the General Electric Research and Development Center, Schenectady, New York, U.S.A., during August 25—30, 1968. The Symposium will include: 1. Crystal structures, surfaces, defects and diffusion processes in chemical reactions involving solids. 2. The nucleation and growth of new phases in solid state reactions, 3. Thermal and photochemical decomposition reactions of inorganic compounds. 4. Reactions of elements, alloys, and chemical cornpounds with gases and solutions. 5. The production of crystalline solids from reactants in the gaseous phase.
6. Chemical reactions between crystalline solids. 7. Chemical reactions in vitreous systems. 8. Chemical processes in high pressure systems. The Symposium is being sponsored by the General Electric Company and the Air Force Office of Scientffic Research (Directorate of Chemical Sciences). Symposium Chairman is Professor J. W. Mitchell, University of Virginia. Additional information can be obtained by contacting the Symposium Secretary, Dr. Peter Cannon, General Electric Company Research and Development Center, Bldg. K-i, Room 3A36, P.O. Box 8, Schenectady, New York 12301. C. S. SAHAGIAN
INTERNATIONAL CONFERENCE ON SILICAN CARBIDE
The Pennsylvania State University will host the 1968 International Conference on Silicon Carbide at its University Park, Pennsylvania site on October 21—23, 1968. To be held under the joint sponsorship of the Air Force Cambridge Research Laboratories and the Carborundum Company, the Conference will concentrate on several themes. The first day will emphasize growth of single crystals of silicon carbide by various techniques such as vapor growth, melt and solution growth, and epitaxial vapor transport. The second day sessions will deal with the characteristics of these crystals and their physical, chemical, thermal, electronic, and optical properties. Electronic and electro-optical silicon carbide devices and device technology will be discussed on the final day. Conference facilities regrettably will limit the number
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1968
of attendees. Preference will be given to people actively working on some aspect of silicon carbide and expressing a desire to participate in the discussions. The majority of the program will consist of about thirty invited papers; however, provision will be made for a few contributed papers and late developments. The proceedings will be published as a special issue of the Materials Research Bulletin. The Conference Organizing Committee is chaired by C. Ryan, AFCRL and D. Sturges, Carborundum. Those desiring further information should write to: Prof. J. W. Faust, Jr. Conference Secretary Materials Research Laboratory University Park, Pennsylvania 16802, U.S.A.
NEWS, REPORTS AND ANNOUNCEMENTS
INTERNATIONAL SYMPOSIUM ON THE REACTIVITY OF SOLIDS Schenectady, New York, August 25—30, 1968 The 6th International Symposium on the Reactivity of Solids will be held at the General Electric Research and Development Center, Schenectady, New York, U.S.A., during August 25—30, 1968. The Symposium will include: 1. Crystal structures, surfaces, defects and diffusion processes in chemical reactions involving solids. 2. The nucleation and growth of new phases in solid state reactions, 3. Thermal and photochemical decomposition reactions of inorganic compounds. 4. Reactions of elements, alloys, and chemical cornpounds with gases and solutions. 5. The production of crystalline solids from reactants in the gaseous phase.
6. Chemical reactions between crystalline solids. 7. Chemical reactions in vitreous systems. 8. Chemical processes in high pressure systems. The Symposium is being sponsored by the General Electric Company and the Air Force Office of Scientffic Research (Directorate of Chemical Sciences). Symposium Chairman is Professor J. W. Mitchell, University of Virginia. Additional information can be obtained by contacting the Symposium Secretary, Dr. Peter Cannon, General Electric Company Research and Development Center, Bldg. K-i, Room 3A36, P.O. Box 8, Schenectady, New York 12301. C. S. SAHAGIAN
INTERNATIONAL CONFERENCE ON SILICAN CARBIDE
The Pennsylvania State University will host the 1968 International Conference on Silicon Carbide at its University Park, Pennsylvania site on October 21—23, 1968. To be held under the joint sponsorship of the Air Force Cambridge Research Laboratories and the Carborundum Company, the Conference will concentrate on several themes. The first day will emphasize growth of single crystals of silicon carbide by various techniques such as vapor growth, melt and solution growth, and epitaxial vapor transport. The second day sessions will deal with the characteristics of these crystals and their physical, chemical, thermal, electronic, and optical properties. Electronic and electro-optical silicon carbide devices and device technology will be discussed on the final day. Conference facilities regrettably will limit the number
-
1968
of attendees. Preference will be given to people actively working on some aspect of silicon carbide and expressing a desire to participate in the discussions. The majority of the program will consist of about thirty invited papers; however, provision will be made for a few contributed papers and late developments. The proceedings will be published as a special issue of the Materials Research Bulletin. The Conference Organizing Committee is chaired by C. Ryan, AFCRL and D. Sturges, Carborundum. Those desiring further information should write to: Prof. J. W. Faust, Jr. Conference Secretary Materials Research Laboratory University Park, Pennsylvania 16802, U.S.A.