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Interpretation of surface and bulk effects using the pulsed MIS capacitor
WORLD
ABSTRACTS
ON MICROELECTRONICS
Laboratories Record, September (1971), p. 251. Monolithic crystal filters and hybrid thin-film integrated circuits help reduce the cost and size of channel banks. T h e smaller components allow most of the electronics to be housed in modular plug-in units, which are significantly smaller than earlier versions.
Interpretation of surface and bulk effects using the pulsed MIS capacitor. D. K. SCHRODER and J. GULDBERC. Solid St. Electron. 14 (1971), p. 1285. The interpretation of lifetimes and surface generation velocities determined from pulsed M I S - C measurements is examined. The effect of surface generation on the C-t response and "Zerbst" plot is demonstrated and values for so are correlated with the density of fast surface states. Different kinds of surface dominated responses are analyzed and we discuss how the bulk characteristics can be retrieved. It is also shown that pulsing from inversion significantly lowers so, but for high densities of surface states this technique does not suffice to eliminate surface effects. Finally, an approximate analysis of the C-t data is shown to agree quite well with the more exact analysis and it is then applied to lifetime maps of Si wafers.
An IC form, Hall-effect devices can take on m a n y n e w applications. M. OPPENHEIMER. Electronics, 2 August (1971), p. 46. Brushless motors, recording heads, measuring gear are just a few jobs opening up for Hall circuits now that amplifiers, regulators and other peripherals can be integrated on to the same chip as the generator.
Integrated high-speed logic circuits in NEC. S. TSUNEKI and H. KANAL N E C Res. Dev. ffapan, No. 20, January (1971), p. 188. Reviewing the current development of integration technologies in Nippon Electric Company, basic philosophies of design of high-speed integrated logical circuits have been described based on
7. S E M I C O N D U C T O R
INTEGRATED
A n investigation of lateral diffusion in silicon. W. G. TOWNSEND and A. J. STRACHAN. Solid St. Electron. 14 (1971), p. 551. A number of solutions of the diffusion equation relevant to the production of certain types of F E T are considered and the results presented graphically. First a two-dimensional solution for a constant step function source of impurity is considered and the computed results presented in a convenient form for making lateral diffusion design calculations. A number of cases of diffusion from finite sources are then treated: a step function source, diffusion through a narrow mask opening, diffusion under a narrow strip of oxide, diffusion under a small mask from a small instantaneous source and from an instantaneous source step function. The difficulty of extending this work to a two-stage diffusion process is discussed.
AND RELIABILITY
119
features of IC technology. Families of general purpose integrated logic gates developed in the company are explained in view of the hierarchy of logical performmaces. Recent developments of the processes have resulted in effective improvement of interconnections, semiconductor elements and beam lead structures in LSI. Design concepts of LSI by power theory have resulted in low energy logic function blocks with high performances and high reliability at low cost. LSI arithmetic logic blocks have been experimented by low energy logic gates as N T L (non-threshold logic) and L C M L (low level current mode logic).
Monolithic level shifter lets MOS, "UrL share s a m e network. T. E. O'BRmN. Electronics, 5 July (1971), p. 70. When high-voltage MOS and T T L have to be interfaced, buffers built of discrete components can degrade circuit speed and also waste power and space; a converter-on-a-chip solves all three problems.
*Speech coder as a special integrated circuit. C. H. JONES and P. AITKEN. Signals Res. ~ Dec. Est., Christchurch, Hants, February (1971), pp. 32. BR-25853, SRDE-REP-71002. Covers the development of a single chip integrated circuit which contains all the logic circuitry required for a Delta-Sigina speech coder/ decoder. The device uses conventional R T L circuitry and the chip power consumption is less than 200 mW with a supply voltage of 5 V.
Integrierte Schaltungen fiir electronische uhren. H. KELLER. Rad. Meat. Electron. 37, No. 7 (1971), p. 420. (In German.) Integrated circuits for electronic clocks and watches. The different designs with discrete components and with integrated circuits. Quartz controlled oscillators for higher accuracy up to long-term drifts of only 1 min per year. Frequency dividers in bipolar or in MOS technology. Application circuits of the newest special ICs for clocks and watches.
CIRCUITS, DEVICES AND MATERIALS
Resistivity measurements on g e r m a n i u m crystals by the spreading resistance technique. T. L. CHU and R. L. RAY. Solid St. Technol,, September (1971), p. 37. The spreading resistance technique has been applied to resistivity measurements of germanium crystals with good reproducibility by using experimentally determined spreading resistance-resistivity relations. The resistivity profiles in epitaxial germanium layers and the resistivity inhomogeneities in melt-grown germanium crystals were studied by the same technique. The former was measured by using two probes along a beveled surface of the specimen. The radial resistivi~. profiles were obtained by applying a spreading resistance probe along a diameter of the specimen surface and measuring the resistance between this probe and a low resistance contact on the specimen. Data obtained in
ABSTRACTS
ON MICROELECTRONICS
Laboratories Record, September (1971), p. 251. Monolithic crystal filters and hybrid thin-film integrated circuits help reduce the cost and size of channel banks. T h e smaller components allow most of the electronics to be housed in modular plug-in units, which are significantly smaller than earlier versions.
Interpretation of surface and bulk effects using the pulsed MIS capacitor. D. K. SCHRODER and J. GULDBERC. Solid St. Electron. 14 (1971), p. 1285. The interpretation of lifetimes and surface generation velocities determined from pulsed M I S - C measurements is examined. The effect of surface generation on the C-t response and "Zerbst" plot is demonstrated and values for so are correlated with the density of fast surface states. Different kinds of surface dominated responses are analyzed and we discuss how the bulk characteristics can be retrieved. It is also shown that pulsing from inversion significantly lowers so, but for high densities of surface states this technique does not suffice to eliminate surface effects. Finally, an approximate analysis of the C-t data is shown to agree quite well with the more exact analysis and it is then applied to lifetime maps of Si wafers.
An IC form, Hall-effect devices can take on m a n y n e w applications. M. OPPENHEIMER. Electronics, 2 August (1971), p. 46. Brushless motors, recording heads, measuring gear are just a few jobs opening up for Hall circuits now that amplifiers, regulators and other peripherals can be integrated on to the same chip as the generator.
Integrated high-speed logic circuits in NEC. S. TSUNEKI and H. KANAL N E C Res. Dev. ffapan, No. 20, January (1971), p. 188. Reviewing the current development of integration technologies in Nippon Electric Company, basic philosophies of design of high-speed integrated logical circuits have been described based on
7. S E M I C O N D U C T O R
INTEGRATED
A n investigation of lateral diffusion in silicon. W. G. TOWNSEND and A. J. STRACHAN. Solid St. Electron. 14 (1971), p. 551. A number of solutions of the diffusion equation relevant to the production of certain types of F E T are considered and the results presented graphically. First a two-dimensional solution for a constant step function source of impurity is considered and the computed results presented in a convenient form for making lateral diffusion design calculations. A number of cases of diffusion from finite sources are then treated: a step function source, diffusion through a narrow mask opening, diffusion under a narrow strip of oxide, diffusion under a small mask from a small instantaneous source and from an instantaneous source step function. The difficulty of extending this work to a two-stage diffusion process is discussed.
AND RELIABILITY
119
features of IC technology. Families of general purpose integrated logic gates developed in the company are explained in view of the hierarchy of logical performmaces. Recent developments of the processes have resulted in effective improvement of interconnections, semiconductor elements and beam lead structures in LSI. Design concepts of LSI by power theory have resulted in low energy logic function blocks with high performances and high reliability at low cost. LSI arithmetic logic blocks have been experimented by low energy logic gates as N T L (non-threshold logic) and L C M L (low level current mode logic).
Monolithic level shifter lets MOS, "UrL share s a m e network. T. E. O'BRmN. Electronics, 5 July (1971), p. 70. When high-voltage MOS and T T L have to be interfaced, buffers built of discrete components can degrade circuit speed and also waste power and space; a converter-on-a-chip solves all three problems.
*Speech coder as a special integrated circuit. C. H. JONES and P. AITKEN. Signals Res. ~ Dec. Est., Christchurch, Hants, February (1971), pp. 32. BR-25853, SRDE-REP-71002. Covers the development of a single chip integrated circuit which contains all the logic circuitry required for a Delta-Sigina speech coder/ decoder. The device uses conventional R T L circuitry and the chip power consumption is less than 200 mW with a supply voltage of 5 V.
Integrierte Schaltungen fiir electronische uhren. H. KELLER. Rad. Meat. Electron. 37, No. 7 (1971), p. 420. (In German.) Integrated circuits for electronic clocks and watches. The different designs with discrete components and with integrated circuits. Quartz controlled oscillators for higher accuracy up to long-term drifts of only 1 min per year. Frequency dividers in bipolar or in MOS technology. Application circuits of the newest special ICs for clocks and watches.
CIRCUITS, DEVICES AND MATERIALS
Resistivity measurements on g e r m a n i u m crystals by the spreading resistance technique. T. L. CHU and R. L. RAY. Solid St. Technol,, September (1971), p. 37. The spreading resistance technique has been applied to resistivity measurements of germanium crystals with good reproducibility by using experimentally determined spreading resistance-resistivity relations. The resistivity profiles in epitaxial germanium layers and the resistivity inhomogeneities in melt-grown germanium crystals were studied by the same technique. The former was measured by using two probes along a beveled surface of the specimen. The radial resistivi~. profiles were obtained by applying a spreading resistance probe along a diameter of the specimen surface and measuring the resistance between this probe and a low resistance contact on the specimen. Data obtained in