Intersubband resonance of holes and interaction with 2D plasmons on Si
A259 embedded in a material of dielectric constant cs terminating at the interface with a homogeneous medium of dielectric constant c0. The bulk modes...
A259 embedded in a material of dielectric constant cs terminating at the interface with a homogeneous medium of dielectric constant c0. The bulk modes form a continuum, and the surface mode, which exists only for wavelengths shorter than a critical value, can occur either above or below the bulk continuum depending on the ratio of c~ to c 0.
Department of Physics, Brown University, Providence, Rhode Island 02912, USA Received 6 July 1983; accepted for publication 7 September 1983 A general formulation is developed to describe the electronic collective modes of a type 11 superlattice as exemplified by the InAs/GaSb system. Dispersion relations are evaluated in the limit of weak coupling between different intersubband excitations and the intrasubband modes.
A . D . W I E C K , E. B A T K E , D . H E I T M A N N
AND INTERACTION
WITH
a n d J.P. K O T T H A U S
lnstitut fi~r A ngewandte Physik, Universiti~t Hamburg, Jungiusstrasse 11, D- 2000 Hamburg 36, Fed. Rep. of Germany Received 4 July 1983; accepted for publication 8 September 1983 Intersubband resonances of holes have been investigated on the high symmetry surfaces of silicon for a wide range of frequencies (30-400 cm -1) and charge densities ((1-8)× 1012 cm-2) with Fourier transform spectroscopy. Spectra are measured in transmission with the far infrared radiation polarized parallel to the Si-SiO2 interface and allow a detailed analysis of excitation strength and resonance lineshape. Also possible interactions of energetically low lying subband resonances and 2D plasmons have been studied.