Introduction to semiconductor device yield modeling

Introduction to semiconductor device yield modeling

Microelectronics Journal, 25 (1994) Book Reviews Introduction to Semiconductor Device Yield Modeling Albert V. Ferris-Prabhu, Artech House, London, 1...

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Microelectronics Journal, 25 (1994)

Book Reviews Introduction to Semiconductor Device Yield Modeling Albert V. Ferris-Prabhu, Artech House, London, 1992, 91 pp., £ 5 2 There are basically two ways of increasing the level of integration o f integrated circuits: down-scaling the device dimensions, so that more devices can be fitted in the same active area on the chip; and increasing the active area on the chip. Down-scaling has been far more attractive as it increases the speed of the circuit at the same time, but it becomes very difficult to deal with the limitations of this technique. As we are forced more frequently to attempt the second a p p r o a c h , m o r e i m p o r t a n t will b e c o m e the limitation to this approach, which is yield reduction. It is increasingly important to understand what is limiting the integrated circuit yield. Mathematical m o d e l s used to express the y i e l d - a s s o c i a t e d phenomena are undoubtedly very important. This is one of rare books on yield modelling. If you w o n d e r what is behind the title Introduction to Semiconductor Device Yield Modeling, you may get a good idea from the list o f the chapter titles: 1. Yield; 2. Fault probability; 3. Effect of defect sizes on fault probability; 4. C o u n t i n g techniques; 5. Yield equations; 6. Defect density and scaling rules; 7. Yield prediction; 8. Yield with redundancy; 9. A yield comparison; and 10. Productivity. These ten chapters are divided into 70 sections in total. If you notice that the book has 90 pages (10 pages per chapter, or 1.3 pages per section) you can get a fairly good idea of the level at which these topics are considered.

modelling that suits them. It does not take long to notice that, for example, the following important aspects of yield modelling should be investigated: parametric yield models, application of yield models to y i e l d c o n t r o l , design i m p r o v e m e n t , cost optimization, etc. The author's words that the book is an "introductory overview" mean exactly that. This book is not for those who are seeking a comprehensive overview of the work done in yield modelling, as there is a large number of related publications which do not even appear in the list of references. S. Dimitrijev and N. Stojadinovic~

An Introduction to GaAs IC Design S.J. Harrold, Prentice Hall, UK, 1993, 172 pp., £ 18.99 (paperback) The author's stated aim of this book is "to satisfy the needs o f undergraduate students in electronic engineering or computer science, and also practising engineers". However, as an introductory text on the subject it is more likely to be of use to students than to practising engineers. The book starts from an elementary level, the first two chapters discussing the physical properties of GaAs, particularly in comparison with silicon, and basic GaAs devices and their characteristics. The depth of treatment is entirely adequate for most electronic engineering students, but unlikely to be sufficient for those specializing in device physics and fabrication.

The author states that the purpose of the book "is to provide an introduction to yield prediction for new practitioners of the art". The book can be very useful for those w h o want a quick introduction to yield modelling. It can excellently serve postgraduate students and others trying out inventive work, who can quickly find an unsolved problem in yield

Chapters 3 and 4 continue with a coverage of standard digital and analogue circuits, concentrating upon circuit characteristics rather than detailed design considerations. However, perhaps controversially, the following chapters revert to a more basic level, being: Chapter 5, Processing; and

0026-2692/94/$7.00 © 1994, Elsevier Science Ltd.

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