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Ion assisted deposition—large-scale production of a wide band antireflection coating on ophthalmic lenses
Abstracts
require an accurate selection of the kind of ions employed and proper ion beam operation. In the case of carbon the possibility of inelastic ion~ondensate interaction changing the phase content of carbon films and creating the unusual crystal modifications which do not exist in the bulk samples was shown. This technique opens the possibilities for the creation of a new material with unique properties.
Ion assisted and ion plating deposition of thin films Nan Liying, Department of Applied Physics, Tsinghua University,
Beiiing 100084, China The deposition processes consisting of the ion bombardment of growing films during growth are well known and so-called ion assisted deposition of thin films. The ions may be inert or active. The bombardment of inert gas ions with definite energy during deposition may increase the densification of the thin film by energy transfer at the substrate. The process of active ion assisted deposition consisting of not only energy transfer but also chemical reaction with the evaporant is more complicated. The phenomenological model of the ion assisted deposition process has been reviewed. Ion plating deposition of thin films with various means is the recent trend and development of thin films technology. In this paper, we will limit the discussion to magnetic controlled vacuum plasma deposition and low voltage ion plating deposition. Comparison of these developments of thin film technology will be discussed.
substrates as well as the thermal effect induced from ion bombardment in order to avoid an overheating of the plastic lenses. We have characterized different materials like, for example, A1203, MgF2, SiO2, Cr, TiOz, Ti203 and ZrO2 to find proper process parameters for each material in these conditions. From our tests, we have the evidence that MgF2 deposited at room temperature with low energy and high current ion bombardment shows a good hardness but a poor moisture resistance as also shown by other researchers. Special precautions have been taken for reactive evaporation (oxygen atmosphere) due to the fact that the O 2 partial pressure required can easily be too high to guarantee stable operation of the ion gun. We have obtained good results for repeatability and mechanical properties with SiO2 as low index material and a mixture of several different materials as high index material. Many quality tests were performed on repeatability, adhesion, scratch and moisture resistance: adhesion was tested putting samples in hot (90°C) D.I. water, scratch resistance with rubber and cheese cloth and moisture resistance was tested putting samples in water vapour at 50°C for 24 h (MIL-C-675C, MIL-C48497A and MIL-C-14806A). Also we put the sample in salted (3 and 7%) water (DIN-58196). To improve the sensitivity of the scratch test, we have developed a device, which we called OMSAWHEEL, capable of performing tests also on curved surfaces. OMSAWHEEL is based on the scratching action of a wheel rotating on the substrate with a precisely adjustable load. Wheels made from different materials and having different edge profiles have been tested with varying loads to find out the optimal parameters for the test procedure. This work shows that it is possible to increase the overall quality of wide band antireflection coating on plastic lenses using lAD technology on a wide production plant.
Ion assisted deposition--large-scale production of a wide band antireflection coating on ophthalmic lenses F Andreani, S Luridiana and G Viseomi, SATIS-OMSAG Technology Department, 20019--Settimo Milanese, Italy; and Mao Shuzheng, Shanghai Optical Instrument Factory, 1545 Huang
Xing Road, Shanghai 200093, China The effect of ion beam assistance (lAD) on mechanical properties (hardness and adhesion) of vacuum deposited thin films is widely recognized. Extensive studies were carried out from our group to realize a wide band antireflection coating using lAD technology to improve hardness and adhesion of films on ophthalmic lenses. The final target of these studies was to obtain a coating with high mechanical performances in a large-scale production plant on plastic lenses (CR39 and lacquered CR39). We studied also the possibility of coating plastic and glass lenses in the same cycle. The films were deposited in a SATIS VACUUM CR900D box coater equipped with an electron beam as an evaporation source and a K A U F M A N ion source. The ion gun can provide 200 V as cathode voltage and up to 5 A of emission current and in all the tests was fed with Argon. The rotating substrate holder of the coater contains up to 48 lenses of 70 mm of diameter and is provided with a device to flip the substrates to process both sides in the same vacuum cycle. Tests were performed to study the ion distribution on the 1060
Compositional and electrical properties of InSb metal oxide semiconductor structure fabricated by photo-chemical vapor deposition C J Huang, Y K Su and R L Leu, Department of Electrical
Engineering, National Chang Kung University, Tainan, Taiwan, China Silicon oxide (SiOx) films grown on InSb substrate with a carrier concentration of 5 x 1014_1 × 1015c m 3 at 77 K to contract m e t a l oxide semiconductor structure was studied. In this process, Hg vapor excited by uv radiation catalyzes the reaction between Si2H 6 and N20. The reaction is conventionally done in low pressure and low temperature (50-200°C) conditions. The refractive index and etching rate in dilute H F solution ( H F : H 2 0 = 1 : 100) is as a function of substrate temperature (Tsub). As Tsub increases, the refractive index increases and the etching rate decreases. The effect of the gas ratio on refractive index and etching rate was also determined. It is recognized that the higher indices of SiOx films have been ascribed to an excess silicon content so that an increase of N20/Si2H6 will decrease the concentration of Si. The spectra for the silicon peak at sputtering times of 0.210 and 390 s were also determined. In addition, the In, Sb and O atom Auger spectra were determined at sputtering times 210, 390, 480 and 600 s. The AES depth profile was also measured for various constituents concentrations. From the
require an accurate selection of the kind of ions employed and proper ion beam operation. In the case of carbon the possibility of inelastic ion~ondensate interaction changing the phase content of carbon films and creating the unusual crystal modifications which do not exist in the bulk samples was shown. This technique opens the possibilities for the creation of a new material with unique properties.
Ion assisted and ion plating deposition of thin films Nan Liying, Department of Applied Physics, Tsinghua University,
Beiiing 100084, China The deposition processes consisting of the ion bombardment of growing films during growth are well known and so-called ion assisted deposition of thin films. The ions may be inert or active. The bombardment of inert gas ions with definite energy during deposition may increase the densification of the thin film by energy transfer at the substrate. The process of active ion assisted deposition consisting of not only energy transfer but also chemical reaction with the evaporant is more complicated. The phenomenological model of the ion assisted deposition process has been reviewed. Ion plating deposition of thin films with various means is the recent trend and development of thin films technology. In this paper, we will limit the discussion to magnetic controlled vacuum plasma deposition and low voltage ion plating deposition. Comparison of these developments of thin film technology will be discussed.
substrates as well as the thermal effect induced from ion bombardment in order to avoid an overheating of the plastic lenses. We have characterized different materials like, for example, A1203, MgF2, SiO2, Cr, TiOz, Ti203 and ZrO2 to find proper process parameters for each material in these conditions. From our tests, we have the evidence that MgF2 deposited at room temperature with low energy and high current ion bombardment shows a good hardness but a poor moisture resistance as also shown by other researchers. Special precautions have been taken for reactive evaporation (oxygen atmosphere) due to the fact that the O 2 partial pressure required can easily be too high to guarantee stable operation of the ion gun. We have obtained good results for repeatability and mechanical properties with SiO2 as low index material and a mixture of several different materials as high index material. Many quality tests were performed on repeatability, adhesion, scratch and moisture resistance: adhesion was tested putting samples in hot (90°C) D.I. water, scratch resistance with rubber and cheese cloth and moisture resistance was tested putting samples in water vapour at 50°C for 24 h (MIL-C-675C, MIL-C48497A and MIL-C-14806A). Also we put the sample in salted (3 and 7%) water (DIN-58196). To improve the sensitivity of the scratch test, we have developed a device, which we called OMSAWHEEL, capable of performing tests also on curved surfaces. OMSAWHEEL is based on the scratching action of a wheel rotating on the substrate with a precisely adjustable load. Wheels made from different materials and having different edge profiles have been tested with varying loads to find out the optimal parameters for the test procedure. This work shows that it is possible to increase the overall quality of wide band antireflection coating on plastic lenses using lAD technology on a wide production plant.
Ion assisted deposition--large-scale production of a wide band antireflection coating on ophthalmic lenses F Andreani, S Luridiana and G Viseomi, SATIS-OMSAG Technology Department, 20019--Settimo Milanese, Italy; and Mao Shuzheng, Shanghai Optical Instrument Factory, 1545 Huang
Xing Road, Shanghai 200093, China The effect of ion beam assistance (lAD) on mechanical properties (hardness and adhesion) of vacuum deposited thin films is widely recognized. Extensive studies were carried out from our group to realize a wide band antireflection coating using lAD technology to improve hardness and adhesion of films on ophthalmic lenses. The final target of these studies was to obtain a coating with high mechanical performances in a large-scale production plant on plastic lenses (CR39 and lacquered CR39). We studied also the possibility of coating plastic and glass lenses in the same cycle. The films were deposited in a SATIS VACUUM CR900D box coater equipped with an electron beam as an evaporation source and a K A U F M A N ion source. The ion gun can provide 200 V as cathode voltage and up to 5 A of emission current and in all the tests was fed with Argon. The rotating substrate holder of the coater contains up to 48 lenses of 70 mm of diameter and is provided with a device to flip the substrates to process both sides in the same vacuum cycle. Tests were performed to study the ion distribution on the 1060
Compositional and electrical properties of InSb metal oxide semiconductor structure fabricated by photo-chemical vapor deposition C J Huang, Y K Su and R L Leu, Department of Electrical
Engineering, National Chang Kung University, Tainan, Taiwan, China Silicon oxide (SiOx) films grown on InSb substrate with a carrier concentration of 5 x 1014_1 × 1015c m 3 at 77 K to contract m e t a l oxide semiconductor structure was studied. In this process, Hg vapor excited by uv radiation catalyzes the reaction between Si2H 6 and N20. The reaction is conventionally done in low pressure and low temperature (50-200°C) conditions. The refractive index and etching rate in dilute H F solution ( H F : H 2 0 = 1 : 100) is as a function of substrate temperature (Tsub). As Tsub increases, the refractive index increases and the etching rate decreases. The effect of the gas ratio on refractive index and etching rate was also determined. It is recognized that the higher indices of SiOx films have been ascribed to an excess silicon content so that an increase of N20/Si2H6 will decrease the concentration of Si. The spectra for the silicon peak at sputtering times of 0.210 and 390 s were also determined. In addition, the In, Sb and O atom Auger spectra were determined at sputtering times 210, 390, 480 and 600 s. The AES depth profile was also measured for various constituents concentrations. From the