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Ion doping of semiconductors
Classified Classified abstracts 481-494
abstracts
481-693
on this page
Editor’s note The label immediately following the title of each item denotes country or origin of publication, that at the end of each abstract indicates country of origin of work (where known).
I. General 16. GASES
vacuum
science
and engineering
AND SOLIDS
16 481. The mechanism of phase transformations at oxidation of titanium carbide on air. (USSR) Using the X-ray, electron-graphical, microscopical and chemical analyses, oxidation of titan&m carbide is investigated in the range of oxygen uressures of 10 to 100 torr. The intermediate uroducts of Tic oxilati& were identified. V A Zhilyaev et al, Neorg Mater, 10 (l), 1974,47-51 (in Russian). 16 482. Distribution of non-equilibrium charge carriers in a semiconductor plate on electron irradiation. (USSR) Depth distribution of non-equilibrium charge carriers in a semiconductor plate at electron irradiation is calculated with account of surface recombination on both sides of the plate. As an example, the depth distribution of excess carriers is calculated at irradiation of a Ge plate with 50 keV electrons. E A Novikova and V A Smolrar. Phvs of Semicon and Semicond Electronics, No 1, Coil, Sarato; U&veisity -1973, 57-61 (in Russian). 16 483. Investigation of radiation defects in silicon and silicon oxide generated on ion implantation. (USSR) The influence of bombardment with inert gas ions and ions of active impurities P and B on properties of Si and SiOz films is investigated. I Gvulav et al. Struct Defects in Semicon., COIL Novosibirsk 1973. 273 iin Russian). 16 484. The action of electron beams on polymers and its application. (Poland) The mechanism of action of electron beams on polymers is considered. The resolution at electron beam lithography is analysed. It is concluded that at present the resolution is determined by properties of polymers and not by the electron beam size. J Sobanski, Pr Nauk Znst Technol Elektron Polytech Wrocl, No 10, 1973, 119-131 (in Polish). 16 485. Utilization of polymethacrylate of methyl as electron sensitive polymer. (Poland) On the basis of results of experiments in an electron beam apparatus and scanning electron microscope with layers of polymethacrylate of methyl with thickness of 0.4 to 0.7 pm, it is shown that polymethacrylate of methyl can be used as electron-beam sensitive polymer, as a protective layer in fabrication of UHF integrated circuits and for investigation of distribution of charge density in an electron beam. E Szymala, Pr Nauk Znst Technol Elektron Polytech Wrocl, No 10, 1973, 143-148 (in Polish). 16 486. Investigation of distribution of generation centres in ion-beam p-n junctions. (USSR) Distribution of generation centres in p-n junctions, prepared by ion implantation of boron, is investigated after implantation process and after annealing at 500 to 600°C. V V Yudin et al, Struct Def in Semicon, Coil, Novosibirsk 1973, 283-284 (in Russian). 16 487. The in&ence of defects on volt-ampere characteristics of p-n junctions prepared by implantation of Cd ions into GaAs. (USSR) The influelnce of annealing temperature of p-n junctions, prepared by implantation of 40 keV Cd ions into single crystal GaAs at a
and
target temperature of 2Oo”C, on volt-ampere characteristics of the junctions is investigated. The maximum breakdown voltage is reached after annealing of junctions at 500°C. A A Gavrilov et al, Struct Def in Semicon, Co& Novosibirsk 1973, 288-290 (in Russian). 16 488. The influence of annealing temperature on emission of light from n-n iunctions DreDaredby imolantation of Cd into GaAs. (USSR) The-influence of anneaiing temperature on electro-luminescence of p-n junctions, prepared by implantation of 40 keV Cd ions into GaAs, is investigated. The annealing was carried out in ampoules evacuated to 10m6 torr at temperatures of 800, 850, 900 and 95O’C. A A Gavrilov et al, Struct Def in Semicon, Coil, Novosibirsk 1973, 285-287 (in Russian). 16 489. Generation of radiation defects in KC1 by high-frequency discharge in hydrogen. (USSR) Generation of colour centres in single crystal KC1 by bombardment with low-energy ions and electrons in a high-frequency discharge in hydrogen at a pressure of 10m2 torr is investigated. A I Bazhin and A I Dudelzak, Phys Process in Crystals with Defects, Coil, Kiev 1972, 203-206 (in Russian). 16 490. Utilization of the channelling effect for investigation of radiation defects in single crystals. (USSR) Channelling of protons with energy of 6.72 MeV in KC1 single crystals is investigated. Energy distribution of protons, transmitted through the single crystal with thickness of 100 pm, is measured at incidence of the proton beam in the
abstracts
481-693
on this page
Editor’s note The label immediately following the title of each item denotes country or origin of publication, that at the end of each abstract indicates country of origin of work (where known).
I. General 16. GASES
vacuum
science
and engineering
AND SOLIDS
16 481. The mechanism of phase transformations at oxidation of titanium carbide on air. (USSR) Using the X-ray, electron-graphical, microscopical and chemical analyses, oxidation of titan&m carbide is investigated in the range of oxygen uressures of 10 to 100 torr. The intermediate uroducts of Tic oxilati& were identified. V A Zhilyaev et al, Neorg Mater, 10 (l), 1974,47-51 (in Russian). 16 482. Distribution of non-equilibrium charge carriers in a semiconductor plate on electron irradiation. (USSR) Depth distribution of non-equilibrium charge carriers in a semiconductor plate at electron irradiation is calculated with account of surface recombination on both sides of the plate. As an example, the depth distribution of excess carriers is calculated at irradiation of a Ge plate with 50 keV electrons. E A Novikova and V A Smolrar. Phvs of Semicon and Semicond Electronics, No 1, Coil, Sarato; U&veisity -1973, 57-61 (in Russian). 16 483. Investigation of radiation defects in silicon and silicon oxide generated on ion implantation. (USSR) The influence of bombardment with inert gas ions and ions of active impurities P and B on properties of Si and SiOz films is investigated. I Gvulav et al. Struct Defects in Semicon., COIL Novosibirsk 1973. 273 iin Russian). 16 484. The action of electron beams on polymers and its application. (Poland) The mechanism of action of electron beams on polymers is considered. The resolution at electron beam lithography is analysed. It is concluded that at present the resolution is determined by properties of polymers and not by the electron beam size. J Sobanski, Pr Nauk Znst Technol Elektron Polytech Wrocl, No 10, 1973, 119-131 (in Polish). 16 485. Utilization of polymethacrylate of methyl as electron sensitive polymer. (Poland) On the basis of results of experiments in an electron beam apparatus and scanning electron microscope with layers of polymethacrylate of methyl with thickness of 0.4 to 0.7 pm, it is shown that polymethacrylate of methyl can be used as electron-beam sensitive polymer, as a protective layer in fabrication of UHF integrated circuits and for investigation of distribution of charge density in an electron beam. E Szymala, Pr Nauk Znst Technol Elektron Polytech Wrocl, No 10, 1973, 143-148 (in Polish). 16 486. Investigation of distribution of generation centres in ion-beam p-n junctions. (USSR) Distribution of generation centres in p-n junctions, prepared by ion implantation of boron, is investigated after implantation process and after annealing at 500 to 600°C. V V Yudin et al, Struct Def in Semicon, Coil, Novosibirsk 1973, 283-284 (in Russian). 16 487. The in&ence of defects on volt-ampere characteristics of p-n junctions prepared by implantation of Cd ions into GaAs. (USSR) The influelnce of annealing temperature of p-n junctions, prepared by implantation of 40 keV Cd ions into single crystal GaAs at a
and
target temperature of 2Oo”C, on volt-ampere characteristics of the junctions is investigated. The maximum breakdown voltage is reached after annealing of junctions at 500°C. A A Gavrilov et al, Struct Def in Semicon, Co& Novosibirsk 1973, 288-290 (in Russian). 16 488. The influence of annealing temperature on emission of light from n-n iunctions DreDaredby imolantation of Cd into GaAs. (USSR) The-influence of anneaiing temperature on electro-luminescence of p-n junctions, prepared by implantation of 40 keV Cd ions into GaAs, is investigated. The annealing was carried out in ampoules evacuated to 10m6 torr at temperatures of 800, 850, 900 and 95O’C. A A Gavrilov et al, Struct Def in Semicon, Coil, Novosibirsk 1973, 285-287 (in Russian). 16 489. Generation of radiation defects in KC1 by high-frequency discharge in hydrogen. (USSR) Generation of colour centres in single crystal KC1 by bombardment with low-energy ions and electrons in a high-frequency discharge in hydrogen at a pressure of 10m2 torr is investigated. A I Bazhin and A I Dudelzak, Phys Process in Crystals with Defects, Coil, Kiev 1972, 203-206 (in Russian). 16 490. Utilization of the channelling effect for investigation of radiation defects in single crystals. (USSR) Channelling of protons with energy of 6.72 MeV in KC1 single crystals is investigated. Energy distribution of protons, transmitted through the single crystal with thickness of 100 pm, is measured at incidence of the proton beam in the