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Linear IC automatically focuses camera lens
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World Abstracts on Microelectronics and Reliability
more susceptible than "nonpolar" dielectrics such as polyslyrcne. 'l'hc R)llowing considerations in minimizing generation of spurious signals are discussed: (1t i2) [3) [4i
selection of materials: limitations on use conditions: preconditioning or annealing ; capacitor screening techniques.
12L puts it all together for 10-bit a-d converter chip. PAt:l, BROKAW, Electronics p. 99 (13 April 1978L Linearcompatible integrated injection logic may well become the technology of choice for fabricating high-performance monolithic analog-to-digital converters, As a bipolar process. il can produce better analog components than any metal-oxide-semiconductor process, and unlikc other forms of bipolar logic, it can compete with M O S levels of digitalcircuit density. As a result, 12L is the technology behind a new 10-bit a d converter, which is also the first chip of its kind to be frilly self-contained. Its only external needs are the appropriate power-supply voltages and a convert command. Its on-chip voltage reference and clock save the user both the bother and expense of implementing these functions offchip. Its other elements a comparator, a digital-to-analog converter, a successive-approximation register, and control logic handle the successive-approximation conversion.
Linear ! ( automatically focuses camera lens. LAVON K. COOPER, DA'¢ID I~. FULKERSON and NORMAN L. SIAUFFER. t;'h'ctronics p. 139 (27 April 1978). By comparing a fixed and a moving image on two photodetectors, focusing system based on an optolinear chip recognizes best match and produces a signal that is used to set a range-finder camera lellS.
New arrivals in the bulk storage inventory. LAURENCE AI_IMaN. Eh'ctronic.,, p. 106 (13 April 1978). Designers of mare inemories, disk tiles, and intelligent terminals should take a good hard look at today's bubble memories and chargecoupled devices. High temperature properties of solid tantalum chip capacitors. I)AVlI) (i. Tln)MPSON and SUP,ENDI~:R GUNNALA. IEEE Trails. Parts, ll ybrids, Packaging! P H P - ! 3,(4) 390 (December 1~.~77). The use of tantalum chip capacitors in conjunction with hybrid circuitry requires stable capacitor characteristics that x~ill withstand the stresses of c o m p o n e n t ' a t t a c h m e n t , testing, and circuit operations. A line of miniature tantalum chip capacitors is discussed with emphasis on materials, constructional methods, and resultant performance of the devices under environmental and operational conditions. Results of exposure It) high temperature attachment conditions are presented with details of impedance and dissipation factor characteristics as well as other traditional capacitor parameters.
lation. The effects of the substrate resistivity are considered for low. moderate and high doping concentrations It is shown that only when the channel thickness is much smaller than the oxide thickness the device saturation characteristics can be approximated by a square fnnction of the gate w)ltage. Results of small-signal calculations arc presented for both generalized and specific device structures which depict the gate voltage dependence of the gate and subslrale Iransconductance and the input capacitance paramelers for both depletion and accumuhltion mode of operations. A small signal equiwilent network model is proposed which can be used for the calculation of high-frequenc.,, device linlitations.
Operation and characterization of N-channel EPROM cells, Jetty J. BARN~;S, JEH: L. LINI}~:N and JOHN R. El)WARDS. Solid-St. Electron. 21, 521 (1978). This paper describes the operation and characterization of N-Channel, double-polysilicon gate M O S structures that may be used in an Erasable, Programmable, Read-Only Memory (EPROM). l h e trade-offs for various structures with regard to writing ability, reading ability, fabrication complexity and ease of erasure are discussed, Measurements of the device arc coinpared to the associated theory, and the sensitivity of the structure to various device parameters is also described Dense, interchangeable RUMs work with fast microprocessors. RC.BER'I GREENI!. Electronics p. 104 (30 March 1978) l'he recently introduced 2332 and 2364 read-only memories double and quadruple the density of today's 16-K devices by using an adaptation of lntel's It-MOS process. Moreover, being flmctionally compatible with each other, earlier men> burs of the same family, and the new high-performance microprocessors, they eliminate the need tT~rredesign of the memory portion of a n]ic|-oprocessor systenl each time tile firmware changes. Cell layout boosts speed of low-power 64-K RUM. DENNIS R. WU.SON. Electronics p. 96{30 March 1978). A 64-K MOS read-only memory has been developed that sets a new high for R U M density and performance. T h a n k s to a layout thai shares elements a m o n g many cells and a dynamic peripheral circuit design that reduces power and increases speed, this chip operates typically with access times of 80 nanoseconds and power dissipations of 150 milliwatts. That's the best speed power performance yet offered by any R U M of any size.
Ihan 500 hours.
A charge-sheet model of the MOSFET. ,I. R. Brews. N,did-St. Eh.,ctron. 21,345 (1978). Intuition, device evolution, and even efficient computation require simple M O S F E T (metaloxide semiconductor lield-effect transistor)models. Among these simple models are charge-sheet models which compress the inversion hlyer into a conducting plane of zero thickness. It is the purpose of this paper to test one such chargc sheet model to see whether this approximation is too severc. I his particular model includes diffusion which is expccted to be important m the subthreshokt and saturation regions As a test the charge sheet model is applied to longchannel devices. Long-channel M O S F E T behavior has been thoroughly studied, and is very well explained by the Pao Sah double-lntegral formula for the current. Hence, a clear-cut test is a comparison of the charge sheet model with the Pao Sah model. We lind the charge sheet model has tv, o advantages o,,er lhe Pao Sah inodel.
D.c. and high-frequency characteristics of builtqn channel MOS-FETs. PIErrE E. SCHMIm' and MUKUNt~t, B. DAS. Solid-St. Electron. 21, 495 (1978). This paper analyses the d.c. and small-signal a.c. characteristics of M O S - F E T s with a built-in conducting channel that can either be completely depleted or enhanced in conductivity by carrier accumu-
Nonplanar power field-effect transistor (V-f.e.t.). I. I). MOKAND and C. A. T. SALAMA. Solid St. Electro, l)et:ice~ 2, (2) 52 (March 1978). A high-frequency power junction field-effect transistor with a nonplanar V-shaped channel fabricated by preferential etching of (100) silicon is described. The structure of the transistor is very simple: il
Aluminum SOS Schotiky diodes. S. Y. l i s t . R C 4 Rev. 3g, 533 (December 1977). A l u m i n u m SOS Schottky diodes having excellent characteristics are described. The series resistance is relatively large, however. The barrier height of the Al SOS contact is experimentally found to be 0.77 + 0.02 eV. No degradation in diode characteristics was found when the AI SOS Schottky diodes were bias-temperature tested at 1 0 0 C with I ) . - 0 . 1 5 V or lu 10V for more
World Abstracts on Microelectronics and Reliability
more susceptible than "nonpolar" dielectrics such as polyslyrcne. 'l'hc R)llowing considerations in minimizing generation of spurious signals are discussed: (1t i2) [3) [4i
selection of materials: limitations on use conditions: preconditioning or annealing ; capacitor screening techniques.
12L puts it all together for 10-bit a-d converter chip. PAt:l, BROKAW, Electronics p. 99 (13 April 1978L Linearcompatible integrated injection logic may well become the technology of choice for fabricating high-performance monolithic analog-to-digital converters, As a bipolar process. il can produce better analog components than any metal-oxide-semiconductor process, and unlikc other forms of bipolar logic, it can compete with M O S levels of digitalcircuit density. As a result, 12L is the technology behind a new 10-bit a d converter, which is also the first chip of its kind to be frilly self-contained. Its only external needs are the appropriate power-supply voltages and a convert command. Its on-chip voltage reference and clock save the user both the bother and expense of implementing these functions offchip. Its other elements a comparator, a digital-to-analog converter, a successive-approximation register, and control logic handle the successive-approximation conversion.
Linear ! ( automatically focuses camera lens. LAVON K. COOPER, DA'¢ID I~. FULKERSON and NORMAN L. SIAUFFER. t;'h'ctronics p. 139 (27 April 1978). By comparing a fixed and a moving image on two photodetectors, focusing system based on an optolinear chip recognizes best match and produces a signal that is used to set a range-finder camera lellS.
New arrivals in the bulk storage inventory. LAURENCE AI_IMaN. Eh'ctronic.,, p. 106 (13 April 1978). Designers of mare inemories, disk tiles, and intelligent terminals should take a good hard look at today's bubble memories and chargecoupled devices. High temperature properties of solid tantalum chip capacitors. I)AVlI) (i. Tln)MPSON and SUP,ENDI~:R GUNNALA. IEEE Trails. Parts, ll ybrids, Packaging! P H P - ! 3,(4) 390 (December 1~.~77). The use of tantalum chip capacitors in conjunction with hybrid circuitry requires stable capacitor characteristics that x~ill withstand the stresses of c o m p o n e n t ' a t t a c h m e n t , testing, and circuit operations. A line of miniature tantalum chip capacitors is discussed with emphasis on materials, constructional methods, and resultant performance of the devices under environmental and operational conditions. Results of exposure It) high temperature attachment conditions are presented with details of impedance and dissipation factor characteristics as well as other traditional capacitor parameters.
lation. The effects of the substrate resistivity are considered for low. moderate and high doping concentrations It is shown that only when the channel thickness is much smaller than the oxide thickness the device saturation characteristics can be approximated by a square fnnction of the gate w)ltage. Results of small-signal calculations arc presented for both generalized and specific device structures which depict the gate voltage dependence of the gate and subslrale Iransconductance and the input capacitance paramelers for both depletion and accumuhltion mode of operations. A small signal equiwilent network model is proposed which can be used for the calculation of high-frequenc.,, device linlitations.
Operation and characterization of N-channel EPROM cells, Jetty J. BARN~;S, JEH: L. LINI}~:N and JOHN R. El)WARDS. Solid-St. Electron. 21, 521 (1978). This paper describes the operation and characterization of N-Channel, double-polysilicon gate M O S structures that may be used in an Erasable, Programmable, Read-Only Memory (EPROM). l h e trade-offs for various structures with regard to writing ability, reading ability, fabrication complexity and ease of erasure are discussed, Measurements of the device arc coinpared to the associated theory, and the sensitivity of the structure to various device parameters is also described Dense, interchangeable RUMs work with fast microprocessors. RC.BER'I GREENI!. Electronics p. 104 (30 March 1978) l'he recently introduced 2332 and 2364 read-only memories double and quadruple the density of today's 16-K devices by using an adaptation of lntel's It-MOS process. Moreover, being flmctionally compatible with each other, earlier men> burs of the same family, and the new high-performance microprocessors, they eliminate the need tT~rredesign of the memory portion of a n]ic|-oprocessor systenl each time tile firmware changes. Cell layout boosts speed of low-power 64-K RUM. DENNIS R. WU.SON. Electronics p. 96{30 March 1978). A 64-K MOS read-only memory has been developed that sets a new high for R U M density and performance. T h a n k s to a layout thai shares elements a m o n g many cells and a dynamic peripheral circuit design that reduces power and increases speed, this chip operates typically with access times of 80 nanoseconds and power dissipations of 150 milliwatts. That's the best speed power performance yet offered by any R U M of any size.
Ihan 500 hours.
A charge-sheet model of the MOSFET. ,I. R. Brews. N,did-St. Eh.,ctron. 21,345 (1978). Intuition, device evolution, and even efficient computation require simple M O S F E T (metaloxide semiconductor lield-effect transistor)models. Among these simple models are charge-sheet models which compress the inversion hlyer into a conducting plane of zero thickness. It is the purpose of this paper to test one such chargc sheet model to see whether this approximation is too severc. I his particular model includes diffusion which is expccted to be important m the subthreshokt and saturation regions As a test the charge sheet model is applied to longchannel devices. Long-channel M O S F E T behavior has been thoroughly studied, and is very well explained by the Pao Sah double-lntegral formula for the current. Hence, a clear-cut test is a comparison of the charge sheet model with the Pao Sah model. We lind the charge sheet model has tv, o advantages o,,er lhe Pao Sah inodel.
D.c. and high-frequency characteristics of builtqn channel MOS-FETs. PIErrE E. SCHMIm' and MUKUNt~t, B. DAS. Solid-St. Electron. 21, 495 (1978). This paper analyses the d.c. and small-signal a.c. characteristics of M O S - F E T s with a built-in conducting channel that can either be completely depleted or enhanced in conductivity by carrier accumu-
Nonplanar power field-effect transistor (V-f.e.t.). I. I). MOKAND and C. A. T. SALAMA. Solid St. Electro, l)et:ice~ 2, (2) 52 (March 1978). A high-frequency power junction field-effect transistor with a nonplanar V-shaped channel fabricated by preferential etching of (100) silicon is described. The structure of the transistor is very simple: il
Aluminum SOS Schotiky diodes. S. Y. l i s t . R C 4 Rev. 3g, 533 (December 1977). A l u m i n u m SOS Schottky diodes having excellent characteristics are described. The series resistance is relatively large, however. The barrier height of the Al SOS contact is experimentally found to be 0.77 + 0.02 eV. No degradation in diode characteristics was found when the AI SOS Schottky diodes were bias-temperature tested at 1 0 0 C with I ) . - 0 . 1 5 V or lu 10V for more