List of errata to volume 1 of instabilities in silicon devices silicon passivation and related instabilities

List of errata to volume 1 of instabilities in silicon devices silicon passivation and related instabilities

LIST OF ERRATA TO VOLUME 1 OF INSTABILITIES IN SILICON DEVICES Silicon Passivation and Related instabilities G. Barbottin and A. Vapaille (Editors) Er...

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LIST OF ERRATA TO VOLUME 1 OF INSTABILITIES IN SILICON DEVICES Silicon Passivation and Related instabilities G. Barbottin and A. Vapaille (Editors) Errata of Chap. 1 Page 78, 3rd line from bottom. Read: "as thickness decreases" instead of "as thickness increases" Page 80, in Eq. (1.96). An X was missing. Read: dt _ 1 2X d x ' k L "" kp^ Page 87, 13th line from top. Subscript 0 was missing. Read: WA

kp = k p ^ e x p ( - j

^ )

Page 100, in ref. [141]. Read: "The physics of MOS insulators, p. 321" instead of "page 231" Errata of Chap. 3 Pages 183 to 185, in Eqs. (3.22), (3.24), (3.25), (3.27), (3.28). Read: 1 — 7 instead of 1 — 7^ Page 183, in Eq. (3.22b). Read: (

Eg

) instead of (

%

Page 183, in Eq. (3.24a). Read: iof = instead of CT^ = Page 183, in Eq. (3.24b). Read: hag(z) = instead of hTg(z) =

)

Page 184, in Eq. (3.25). Read: 4£af —

h

2S.Tf

instead of —

h

Errata of Chap. 4 Page 222. Two lines of the list of symbols should be altered. Read: Xp, XpsG "" Polarizability of a medium, respectively of PSG Xj Qx SC ^^ Electron affinity of an insulator, respectively of the oxide, of the semiconductor. Page237, inEq. (4.19). Read: ^G - Vox + ^S inv instead of V^ - - V^^ + ^S inv Page 238, in Eq. (4.21 b). Read: ^o ^SC . ^ox ^SC Cn = ~:rr instead of Cn = D - Wsc "'^^^''" "^ ^D - Wsc Page 247, in Eq. (4.44 d). A term is missing in the expression. Read: ^ '^S[exp(,///-UT)-1]

... I 0

d^}J F()//,i//p)

Page 250, in Eq. (4.47). A parenthese is missing. Read: ... ± k B T f i n ^ ) ] "i Page 253, in Eq. (4.51 a). Read: ^FB3 ~ -

QfW ^o ^ox

Page 254, 5 Unes from bottom. Read: ... where Xp is the polarizability of the material Electric field and electric displacement in PSG (polarizability XpgQ) are now related by: ...

Page 256, in Eq. (4.58). Read:

^o tpSG + (^PSG "^ XpsG> ^ox Page 256, in Eq. (4.59). Read: p_, ^-^o

V P ^PSG ^PSG -

^o^oxXpSG^G ^o tpSG "^ (^PSG "^ XpsG) ox t.

Page 256, 4th line from bottom. Read: ... shift AV of the Cj^f (V) curve, which is proportional to the prolongated V Q biasing which has caused the polarization. This proportionality is expressed by:

^v = -

^QXPSG

tpspVc

^^^g,

Errata of Chap. 6 Page 320, 14th Hne from top. Read: £

Mean value of the & distribution instead of &

Page 323, 5th line from top. Read: "river-like" instead of "tree-like" Page 327, 15th line from top. Read: "theoretical" instead of "real" Page 328, 2nd line from top. Read: "capacitor" instead of "capacitors" Page 331, in Eq. (6.3). Read: S instead of & Page 332, in Eq. (6.5). Read: Y^ instead of Y^^

Page 336, in Eq. (6.7 b). Read: t 1/S'_i h=

t VS'_1 instead of h = t

S' t

^/^'

S' t

^/^'

Page 348, 18th line from top. Read: "This supports the idea that trapping alone ..." instead of "This supports the idea that trapping itself..." Page 361, in ref. [3]. Rpad: (1976) 1479 inste'^dof (1976)231 Page 361, in ref. [5b]. Read: (1972) 591, 597 instead of (1972) 398, 591, 597 Page 362, in ref. [35]. Read: (1977)3843 instead of (1977) 3847