rhysica C 185-189 (1991) 2683-2684 North-Holland
LOC~_IZATION AND SUPERCON[XJCTIVITY IN (SEDT-TTF).-~-u[N(CN)=]CI : PRESSL~E EFFECT.
Yu. V. SUSHKO, V. A. ~
0
,
R. A. PETROSOV
I n s t i t u t e of Semiconductors, Ukrainian Academy of Sciences., Kiev, 252650, Ukraine, USSR and E. B. YAGUBSKII
N. D. ~
I n s t i t u t e of Chemical Physics, Academy of Sciences of the USSR, Chernogolovka, 142432,
At ambient pressure titled salt exhibits the insulating ground state. Superconductivity with T= near 12 K appears at the pressure of 95 bar and under the moderate pressures coexists with the high-temperature semiconducting regime. At 340 bar the metallic behavior of resistance is stabilized in whole temperature range and T= reaches the m a ~ i ~ n value (midpoint 12.8 K, onset 13.8 K). Further pressure increasing causes rapid T= decreasing.
l.
INTROOt~TION The
100
problem of
the
competition
between
superconducting and insulating ordering has a special
importance
superconductors. quite well compounds
in
S~Ich a
established of
field
the
of
competition,
(TMTSF)=×
(and P > 6 khan)
has
family
Ell.
-
O
firstly
85
75
95 (bar)
PRESSURE
The number of quasi
two-dimensional
superconducting
8EDT-TTF
rule,
state
a
n-
w~th T= near
exhibit,
as
V
been
in quasi-one-dimensional
discovered organic superconductors i K
o5 0 ~
organic
metallic
salts
in
wide
Pressure d e c a d e n c e
F IGb~E 1 rJf resistance at T=5 Ko
temperature range and their T= reaches I0.5-II~5 K at ambient pressure [2,3]. In 1990 the maximum
measurements
r= in organics was raised to 12.5 K by k-(SEDT-
illustrated
TTF)_-Cu[N(CN)=]CI
Figure
[4].
Interestingly,
ambient pressure its resistivity decreasing the
temperature,
localization
intrinsic state,
of
increases with
indicating, charge
under
therefore,
carriers
as
an
feature of this salt. Superconducting
according
to
[4],
appears
due
to
1
transition
temperature semiconducting k-(SEDT-TTF)=~u[N(CN)=]CI
near 12 K and
high-
regime both exist
in
at moderate pressures.
from
[he
results
of
electrical
resistance
0921-4534/9U$03.50 © 1991 - Elsevier Science Publishers B.V.
modest
the
transition starts
semicc~ducting
regime,
resistance
transition
near
#~
K~
instead only
a
of weak
near 32 K~ ~hich followed by r e ~ r k a b l e
Orop at 25 K. On further cooling the resistance sharply
increases,
transition,
from
RESKETSANODISCUSSION
at
is equal to 5 kQ~mo
bar
however
superconducting
2.
appears
fr~
sho~s,
P=-150
maxi~
superconducting
As is seen
At
work
shci~s that
are
where the s~mp!e resistance
pressure
Our
pressure
i, 2.
superconductivity
immediately
insulating
bar.
in Figures
gas
a pressure the superconducting
transition by the
300
he iium
pressure of 95 bar. Figure 2 shows that at such
suppressing of the insulating of
under
indicating at
12.8
transition
the semiconducting
the
starts
regime~
case of P=95 baro In principie~
All fights reserved.
K,
insulating complete
i~Tediately
similar in
to t ~
such a
case
Y~tK Sushko et al. / Localization and superconducti~ in (BEDT-TTF)2Cu[N(CN)2]Ch pressure effect
2684
15 ¸ 1 0 ~,.
I
2- 95
bor 3 - 1 5 0 bar
1\
10 " I ,-.
k,.
il
"10' o.%
1 bor
I-
j'~
4-250
\
bar
5-340 b=
oe
2, o
0 0
~I0
w10 = z 10 w
,
1
u~lO -' 10 -~ I 0 -'
FIGU~ 2 Temperature dependence of different pressures
resistance
should expect
Under
formstlcm
in
the preceding
order
to
met~llic state
provide
observed
direct
However we
ccmK~etitlon
localization and supezxx~ductivity,
of
the
concluding,
the
understood.
of
this
Similar
(TMTSF)mAsFe
ph~nc~ncn
behavior
crystals,
was
unstable
,
i
2O 30
highest
of
pressures
resistance
is
the
metallic
observed,
and
Tc
sharply decreases as it is seen from Figure 3.
6. CDNCV/JSIONS In summary, the helium gas pressAre effect on resistivity studied.
therefore, their puzzling prax~'ity. origin
l
ICD0 (bar) PRESSURE
necessary
reservoir of ccnductinE electrons.
The
l
,
at behavior
h~ve
,
FIGURE 8 Pressure dependence of superconducting transition temperature. Symbols o denote resistivity midpoint values we reported, * represent the dsts of [4].
1 TEMPER IA~ '=RE(K)
I0
we
I
)
of
k-(BEDT-TTF)sCu[N(CN)2]CI
Superocnductivity
started
w~s
inmm~iateiy
e~e
not
from the regime of charge localization has been
found
for
found at modest pressures
against
Spln
value
reaches
the ~mximum
P
>95 bar. (midpoint
The T= 12.8 K,
Density Waves (SDW) fozmKticm [i]. Assuming that
onset 13.8 K) at P=- 840 bar, where the metallic
SDW or CDW (Ch~ge Density Wave ) o~erlng occur
state is stabilized, and strongly decreases at
in k-(w~I]T-TTF)2Cu[N(C~)2]CI,
further pressure incre~slng.
attribute
the ancm~l~/s
it is tempting to
resistance
decreasing
This work ~ s
supported by the Scientific
near 25 K, observed ~t 150 bar Just before the
Council on the U.S.S.R. State Programme "High-To
insulating
Superconductivity".
phase
transition,
to
sliding
inc~m~nsurate SDW or CDW contribution into the conductivity.
Then
in ~a !~_t!rig
t_r~n__sitioD_ _
following this resistance drop may be attributed to some possible pinning process. As is seen from Figure 2 ,the semiconductorlike behavior is rapidl~ ~uppressed with further
REFERENCES 1. D. Jerome and (1982) 299.
H.J. Schultz,
2. H. Urayama
al.,
et
Chem.
3. A.M.Kini et ~i., iuorg. C ~ l .
Adv.Phys.
31
Lett. (1988) 55 29 (1990) 2555
pressure increasing, and at P=340 bar Tc reaches the maximum value of 12.8 K (onset at 13.8 K).
4. J.M. Williams et al., Inorg 3272.
Cham. 29 (1990)