Classified
abstracts
433-M
The instrument is evacuated by diffusion pumps pressure of 1O-8 torr. S Mroz, Prib Tekh Eksper, No 3, 1971, 205-207 (in Russian).
filament.
to a
33 433. Ultrahigh vacuum cryostat with self-contained
pump.
(USSR) A portable all-metallic demountable cryostat for investigation of the surface properties of semiconductors in the temperature range 300 to 77”K, is described. Preliminary exhausting and degassing of the cryostat is performed on a stationary vacuum plant by adsorption pumps from atmospheric pressure to high vacuum. At the end of degassing and during operation of the cryostat, a sputter-ion pump with a pumping speed of 20 litres/sec maintains a pressure of 1 to 5 x lo+ torr in the cryostat. Residual gas spectrum in the cryostat was measured with the aid of an omegatron. B Z Kanter, Prib Tekh Eksper, No 3, 1971, 211-213 (in Russian). 434. Verification of the masses. (USSR)
equivalence
of inertial
and
33 gravitational
An experiment is described which establishes with an accuracy to 0.9 x 10-l* (confidence level 0.95) that the ratios of the inertial to gravitational masses for aluminium are the same. A torsion pendulum with a true oscillation period of 5 hours and 20 minutes and a relaxation time exceeding 6 x 10’ set was used in a vacuum experimental chamber at pressure below 1 x lo-* torr. V B Braginskiy and V I Panov, Zh Eksper Teor Fiz, 61 (3), Sept 1971, 873-879 (in Russian). 435. Critical currents charge. (USSR)
in electron
beams
with
compensated
33 space
The limiting currents in quasi-neutral beams, with relatively high electron energies up to 20 keV, are measured. The electron beam was propagated along the axis of a metallic cylinder with diameter of 30 cm and length of 150 cm using an axial magnetic field of 500 to 7000 oersted. Compensation of the space charge of the beam was performed by positive ions produced in residual gas at pressure of 1O-6 torr by the electron beam. The obtained data are consistent with the view that the main cause of current restriction in compensated electron beams moving in vacuum in a longitudinal magnetic field is the drift-beam instability. M V Nezlin et al, Zh Eksper Teor Fiz, 60 (3), 1971, 1012-1020 (in Russian). 436. Point defect associates germanium. (Germany)
and inhomogeneity
33 effects in deformed
The electrical and structural properties of deformed n- and p-type germanium are studied experimentally under a lo-5 torr vacuum by means of optical and electron transmission microscopy. It is found that by increasing dislocation density, the initially n-type germanium slices show a conversion to p-type preceded by asymptotic behaviours of both resistivity and Hall coefficient. The experimental results are discussed. (Italy) P Gondi et al, Phys Star Sol (a), 7 (l), Sept 1971, 91-101. 33 437. Modern x-ray sources. (Czechoslovakia) A short history of x-ray tubes is outlined. The first x-ray tubes were discharge devices operating in the left branch of the Paschen curve at pressure of 10e3 torr. A cathode bombarded by positive ions from a discharge served as a source of fast electrons. High-vacuum x-ray tubes have been employed from 1914. Their emission is determined by cathode temperature and the energy of electrons is controlled by anode voltage. Modern intense sources of x-rays employ field emission to obtain impulse currents up to lo6 A and anode voltages up to 300 kV are used. The field emitters require ultrahigh vacuum conditions for stable operation. Impulse discharges in air, hydrogen and other gases at reduced pressure are also used for x-ray generation. E Minarsky,
Slabopr
Obzor,
32 (7), 1971, 342-345
(in Czech).
33 438. Characteristics of formation of high power continuous electron beams in the pressure range 1 x 10m5 to 1 x 1OW torr. (USSR)
The results of investigation of an electron-optical system for the formation of a 250 kW electron beam for electron-beam heating, are reported. A pressure difference of 1 to 2 orders of magnitude exists between the emission system and the drift region. The conditions for compensation of space charge of the electron beam due to accumulation of ions in the drift region are analyzed. Appearance of a
plasma boundary in the region of anode aperture changes the potential distribution in the interelectrode gap. It is shown that the perveance of the emission system can be enhanced up to 12 /JA/V~‘~. V I Perevodchikov and L P Shanturin, Ukr Fiz Zh, 16 (6), 1971, 987-990
(in Ukrainian).
439. Method of reducing the contamination electron-optical devices. (USSR)
rate
33 in
of apertures
To reduce the contamination rate of apertures by residual hydrocarbon molecules polymerized under the action of an electron beam, a holder construction has been developed, which reduces the heat outlet to a minimum. The holder is in the form of a disc of refractory metal with a central aperture. The holder is placed in a metallic housing, the inner surface of which is covered with a heat insulating material. The temperature of the 70 pm-thick molybdenum holder reaches 200°C at a current of 3 x 10e3 A and electron energy of 80 keV and heat is transferred through radiation, as further investigations showed. Under the conditions of electron bombardment existing in electron microscopes, heating of aperture diaphragm by electron beam bombardment results in a decrease of the contamination rate approximately by an order of magnitude. G S Zhdanov and V N Vertsner, Optiko Mekh Prom, No 5, 1971, 67-68 (in Russian). 33 440. Investigation of microhardness of surface layers of silicon single crystals after alloying with boron by ion implantation. (USSR)
Changes in the microhardness of silicon single crystals after irradiation by boron ions with energies of 30, 40 and 100 keV and doses of l(PB ion/cm2 are investigated. It is found that microhardness of the samples increases after ion implantation. Influence of annealing after irradiation on microhardness is also explored. R I Garber et al, Investigation of Materials Collect, Tbilisi 1971, 82-88 (in Russian). 441. Amplification of electron currents by manufactured by ion implantation. (USSR)
for
New
Technology,
semiconducting
33 diodes
Amplification of electron currents with the aid of semiconducting diodes manufactured by ion implantation is investigated. Measurements were performed in the electron beam energy range of 5 to 20 keV. At electron energy of 10 keV the maximum amplification was 2000. The dependence of the amplification factor on the electron beam current density was measured. N N Abramova et al, Electronic Technology, Scient-Techn Collect, Semiconductor
Devices,
37. METALLURGY, CHEMISTRY
No 3, 1971, 68-72 (in Russian). INORGANIC
CHEMISTRY,
ANALYTICAL
442. Cubic hafnium oxide nitride.
37 (USSR) The region of existence of single-phase cubic (type NaCl) hafnium oxide nitride, at pressure of 10m5 torr and temperature 15OO”C, is investigated. The samples of hafnium oxide nitride were prepared by sintering the raw materials in a vacuum furnace at 1500°C and lo+ torr. Yu G Zayuulin et al, Neorg Muter, 7 (8), 1971, 1459-1460 (in Russian). 37 443. Mass spectrometer with high resolving power, type MS 3301, for analysis of organic compounds. (USSR) The mass spectrometer type MS 3301 is suitable for determination of
elemental composition and identification of organic compounds, investigation of the structure of complex molecules and the solution of other problems requiring accurate determination of ion masses. An ion-optical system with Hinterberger-Konig double focusing is used. Three inlet systems are used for sample introduction: an unheated inlet system for introduction of gases and easily volatile liquids, a 350°C heated glass system for introduction of thermally stable compounds with vapour pressure about 10-l torr, and a direct inlet heated system for introduction of microgramme samples, including difficultly volatile and unstable compounds. V G Friddlyanskiy et al, Prib Tekh Eksper, No 3, 1971, 244-245 (in Russian). 444. The problem
of obtaining
vacuum-dense
ceramic
37 work-pieces.
(USSR) Rheological properties of drosses are considered and data on manu125