Mass-spectrometry determination of the boron impurity distribution profile in ion-implanted silicon single crystals

Mass-spectrometry determination of the boron impurity distribution profile in ion-implanted silicon single crystals

Classified abstracts 445-459 facturing technology of vacuum-dense large-size ceramic assemblies are presented. M 1 Neyman et al, Electronic Technol...

168KB Sizes 3 Downloads 56 Views

Classified

abstracts

445-459

facturing technology of vacuum-dense large-size ceramic assemblies are presented. M 1 Neyman et al, Electronic Technology, Scient-Techn Collect, Radiocomponents,

No 1, 1971, 87-93 (in Russian).

445. Microhardness refractory oxides.

at

high

temperature

and

some

properties

37 of

(USSR) Microhardness at high temperature and thermal stability of simple (Yz03 and HfO,) and complex (Y,0,.2HfO,, Nd,03.2Zr02, Euz03. 2ZrO,, Tmz03.2Zr02 and Y,0,.2ZrO,) oxides are investigated in a broad temperature interval up to 1100°C in vacuum at lo+ torr. VP Buntushkin et al, Neorg Mater, 7 (9), 1971, 1638-1639 (in Russian). 446. Mass-spectrometry determination of the boron impurity (USSR) bution profile in ion-implanted silicon single crystals.

37 distri-

The distribution profile of boron atoms implanted in single crystal silicon with various orientation is determined by the method of secondary ion-ion emission. The mass-spectrometric arrangement and typical boron distributions in silicon samples are presented. R 1 Garber et al, Radiation Physics of Non-metallic Crystals, 3, Part 2, Collection, Kiev Naukovaya Dumka 1971,143-148 (in Russian). 37 447. Precipitation

of titanium

in the system

titanium-carbon-oxygen.

(Germany) Oriented plate-like precipitates of o-titanium are observed in TiC,O, containing an excess of titanium. The samples were prepared by sintering in vacuum at pressure of 10m5torr at 1500°C in a resistance heated graphite oven. Structure of the samples is investigated with (France) the aid of electron microscopy and diffraction. J Vicens and 1 L Chermant, 225 (in French).

Phys Stat Sol (a), 7 (l), Sept 1971, 21737

(Germany) The grain boundary diffusion of molybdenum in tungsten was investigated by using diffusion bonded tungsten single crystals. The (110) and (111) faces were connected by diffusion bonding at 1650°C for 3 hours and a pressure of 700 psi in a vacuum of 10e6 torr. After the bonding procedure the tungsten single crystal couple was cut perpendicular to the bonding interface by spark erosion and a molybdenum layer was evaporated onto this surface. Diffusion runs were made at 1840, 1690 and 2090°C for 200 and 100 hours by electron bombardment in a vacuum of lo-’ torr. The molybdenum concentration was investigated by electron microprobe analysis and the grain boundary diffusion coefficient for molybdenum in tungsten is determined in dependence on temperature. R Butz et al, Phys Stat Sol (a), 7 (l), Sept 1971, K5-KS. 448. Grain boundary diffusion of molybdenum in tungsten.

449. Thermodynamics

of titanium,

zirconium

and hafnium

37 oxides.

(USSR) It is shown that congruently evaporating chemical compounds on thermal dissociation exhibit a minimum in the dependence of the total pressure of dissociation products on the oxidation potential. The dependences of the total and partial pressures of components above titanium, zirconium and hafnium oxides are considered and characteristics of the dissociation of these oxides are discussed. 1 S Kulikov, Neorg Muter, 7 (9), 1971, 1561-1563 (in Russian). 37 450. Synthesis

and investigation

of compositions

in the system

TiO-

NiO. (USSR) TiO-NiO systems were synthesized at 700°C in a quartz reactor continuously evacuated to 10m3 torr and immersed in a furnace. It is found that single-phase compositions with NaCl structure are formed both from the TiO and NiO sides in the interval of concentrations to 20 weight per cent. In the immediate concentration interval two- and three-phase equilibrium fields exist. M 1 Ayvazov et al, Neorg Mater, 7 (9), 1971, 1568-1570 (in Russian). 451. Dehydration of the hexahydrate vacuum. (USSR)

of sodium tripolyphosphate

37 in

On heating the hexahydrate of sodium tripolyphosphate (Na,P,O,,. 6H,O) in vacuum, water is released from the compound at several stages. Phase and chemical composition of the solid products formed at the different stages of high-temperature dehydration in vacuum at low4 torr, is investigated. V A Sotnikova-Yuzhik et al, Neorg Mater, 7 (9), 1971, 1539-1542 (in Russian). 126

37 452. Equipment for zone refining of refractory materials. (Poland) Principles of operation and construction of an equipment for electronbeam zone refining of refractory materials in vacuum are described. The cleaned materials have the form of bars 300 mm in length. The

maximum power of the equipment corresponds to 1 kW, which permits refinement of tungsten bars with diameters up to 4 mm. Operating characteristics of the equipment are given. A Halas and M Moraw, Pr Nauk Znst Technol Elektron P Wr Ser Stud Mater, 3 (4), 1971, 3-15 (inPolish). 37

(USSR) Mutual diffusion between liquid Ge and Nb in the temperature range 1100 to 1800°C is investigated in vacuum at 10F4 torr. Analvses of the concentration curves showed that 4 phases are formed in the diffusion layers Nb-Ge. G N Ronami et al, Investigation of Materials for New Technology, 453. Mutual diffusion in the system Nb-Ge.

Collect,

Tbilisi 1971, 36-42 (in Russian).

454. Electroluminescence

of

lamellar

gallium

phosphide

37 crystals.

(USSR) Electroluminescence of melted-in p-n junctions based on GaP is investigated. The junctions were prepared in vacuum or inert gas ambient by melting-in of tin in p-type Gap. Electrical and optical characteristics are investigated. A M Zykov et al, Electroluminescence of Solids, Collect, Kiev 1971, 50-54 (in Russian). 455. Preparation of lead bromide and lead iodide single crystals solutions. (Bulgaria)

37 from

The preparation of lead bromide single crystals from a solution of lead acetate and hydrobromic acid is described. The lead iodide was crystallized in vacuum at 5 x 10m6torr from a solution of lead acetate and potassium iodide using the Bridgman-Stokbarger method. Crystals 10 cm in length and 1.5 cm in diameter have been obtained. K Petkov, Zzv Otdel Kim Nauk Bolg Akad Nauk, 4 (I), 1971, 51-55 (in Bulgarian). 456. The problem of nuclei formation and mechanism of action (USSR) metallic catalysts in the process of diamond synthesis.

37 of

The magnitude of surface tension on the boundary diamond-vacuum is evaluated. It is supposed that the metals with catalytic action reduce the anomalously high value of the surface tension because of their chemical affinity to carbon and the nuclei are formed due to this effect. R G Arkhipov et al, Dokl Akad Nauk SSSR, 199 (l), 1971, 55-57 (in Russian). 457. Nitrogen

distribution

coefficient

37 in silicon carbide single crystals.

(USSR) Results of preparation of silicon carbide single crystals by recrystallization from the vapour phase, at different temperatures and in atmospheres with controlled amounts of nitrogen, are presented. The furnace for single crystal preparation was initially degassed at lo-” torr and 2000°K and then argon with controlled amount of nitrogen was passed through the furnace. Single crystals of silicon carbide were obtained in the temperature range of 2700 to 3000°K. The activation energy of the process of silicon carbide evaporation was determined. The distribution coefficient of nitrogen in silicon carbide was evaluated. V 1 lonov et al, Neorg Mater, 7 (9), 1971, 1523-1528 (in Russian). 37 (USSR) 458. Properties of rhodium borides. Rhodium borides were prepared from powders of boron and rhodium by mixing, pressing and melting of the components in alundum crucibles in vacuum at lo-” torr. Melting temperatures, microhardness and electrical properties of the rhodium borides have been determined. VA Kosenko et al, Neorg Mater, 7 (S), 1971,1455-1456 (in Russian). 37

459. Properties of zirconium monocarbide in the homogeneity range (USSR) Powders of zirconium carbide phases in the homogeneity range were synthesized in a vacuum resistance furnace at 1600°C. The carbide samples were obtained by hot sintering and pressing and were annealed in the vacuum furnace at 10e3 torr and 2000°C. Resistivity,