250
WORLD
ABSTRACTS
ON MICROELECTRONICS
that an applied di/dt less than that required for a catastrophic failure can cause permanent damage. The breakdown voltage of the first quadrant can be degraded by a di/dt stress applied to the third quadrant, and the threshold gate trigger current for the first quadrant can be increased by a di/dt stress applied to the same quadrant. These degradations are explained by thermal damage concentrated primarily in the uppermost junctions of the thyristor.
AND RELIABILITY
Improvements in reliability of metal film resistors. K. W. STANLEY. Mullard Tech. Communications, No. 109, January (1971), p. 207. Recent endurance test results indicate a marked improvement in the reliability of metal film resistors. Modifications to the manufacturing process and the introduction of third harmonic testing have helped to reduce the overall failure rate to 0.00072%/1000 hr.
3. CIRCUIT A N D SYSTEMS RELIABILITY, MAINTENANCE A N D R E D U N D A N C Y *Algebraic properties of faults in logic networks. Stanford Univ. Electronics Labs. F. W. CLEGG,E. J. MCCLUSKEY. March (1970), 149 pp. (1093-7102) P-170364, SU-SEL-69-078. NONR-225-83-NR-373-360 TR-4. *Reliability (electronics), Computer systems hardware, Switching theory/*Computer systems hardware, Electrical faults, Switching theory/*Switching theory, Computer systems hardware, Electrical faults/Logic circuits/Networks/Boolean algebra/Lattices (mathematics). Some of the applications of the knowledge obtained by these techniques of the properties of, and relations between, faults are discussed. In particular, it is shown that knowledge of the relations between faults has important and immediate usefulness in the area of failure detection.
The e c o n o m i c s of operator participation in automatic testing. R. CROSHER.Radio ~ Electron. Engnr, 41, No. 1, January (1971), p. 35. After briefly considering some of the factors which should be considered when installing automatic test equipment, the paper gives detailed consideration to ways in which the degree and nature of operator participation affects the cost of operation. The area of machine interface is significant and a field test console developed for testing of Army radio equipment is quoted as an example where a well designed interface significantly reduces the overall test time, lowers the level of skill required to operate the equipment and generally increases the integrity of testing.
4. MICROELECTRONICS--GENERAL L. CURRAN. Electronics, 18 January (1971), p. 93. Designing custom LSI depends more and more on the computer, but the engineer is still crucial in the design loop.
ACD grows up--fast.
of high-reliability long-life displays. Descriptions of typical solid-state systems are given, together with a forecast of future developments.
What's available in MSI? L. BECK and W. RICHARD. Electron. Engnr, January (1971), p. 25. The table lists the Current trends and future developments in optoelectronic displays. L. H. LEA. Electron. Engng, March (1971), p. 34. A survey of optoelectronic systems shows how industry demand has resulted in the design
bipolar digital MSI circuits available today or in the near future. The list is intended as an aid to design engineers in selecting devices and also to keep them informed of the rapid advances in this field.
5. MICROELECTRONICS DESIGN A N D CONSTRUCTION Counter design using microelectronic
circuits.
W. R. GPm~oay. Int..7. elect. Engng. Educ. 8 (1970), p. 479. Resistor transistor logic (RTL), diode transistor logic (DTL) and transistor transistor logic (TTL), gates and flip-flops are used in the design and construction of digital counters. Particular attention is drawn to the design procedures used in designing the counter circuits. An investigation of the unused states of the counters is made in order to determine whether wrong code cycles were possible or not. Three main methods of designing synchronous and asynchronous counters are considered. Throughout the paper positive logic is used.
*Metallization systems for integrated
circuits.
NASA Washington USA. R. P. BEATTY. July (1970), 25 pp. (1103-7102) P-169173, NASA-TN-D-5866. *Inte-
grated circuits, Metallizing, Reliability (electronics)/*Reliability (electronics), Integrated circuits, Metallizing/ Failure. Metallization-related failure mechanisms have been shown to be a major cause of integrated circuit failures under accelerated stress conditions. This survey will concentrate on inherent limitations in material combinations and methods of detecting these to provide guide lines for characterization and selection of metallization systems for integrated circuits.
Automatic m a s k alignment in MOS/LSI processing. K. G. CLARK.Microelectronics 3, No. 9 (1970), p. 47. The alignment of a silicon wafer in the semiconductor manufacturing process, relies upon the ability of an operator to position a photographic mask directly over a patterned wafer using a split-field microscope system