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Si optoelectronic integrated circuits
Sanyo Electric develops high performance HEMT for satellite bmadcost reception Y HARADA (Sanyo Electric Co. Ltd., Osaka, Japan) JEE, J. Electron. Eng. (Japan), vol. 25, no. 258, pp. 76-80 (June 1988) Public interest in satellite broadcasting in Japan has grown rapidly since NHK started round-the-clock satellite broadcasting in July 1987, and the number of satellite receivers already has exceeded 500000 households. The author looks at latest developments in HEMT (high electron mobility transistor) technology for high sensitivity receivers. (no refs.)
Evaluation of deep states in amorphous-sificon/siliconnitride system from charge-coupled device characteristics S SEKINE, S NAKAMURA, S ODA, M MATSUMURA (Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Japan) Jpn. J. Appl. Phys. 2, Lett. (Japan), vol. 27, no. 7, pp. 1337-1339 (July 1988) Charge transfer characteristics have been investigated experimentally in amorphous-silicon charge--coupled devices under wide operation conditions. Deep states are found to cause the low and frequency-independent transfer efficiency. The deep states in the amorphoussilicon/silicon-nitride system have been separated into the bulk states in the amorphous-silicon layer and the interface states, for the first time. Their typical values are 7.0× 10 Is cm-3eV-land 1.2× 10 H cm -2eV-~ respectively. (15 refs.)
Integrated optoelectronics Detectors for muaoUthie optoelectronics D J JACKSON, J Y JOSEFOWICZ, D B RENSCH, D L PERSECHINI (Hughes Res. Labs., Malibu, CA, USA) Fiber Integr. Opt. (USA), vol. 7, no. 3, pp. 229-233 (1988) The authors present data on the electrical characteristics of the optical response of photodetectors integrated on GaAs substrates with FET devices. They compare the differences between devices fabricated on globally implanted areas versus the undoped semi-insulating regions of the same wafer. (8 refs.) A momUthieally integrated laGaAs/lnP photoreceiver operaflmg wi~ • siqgle 5-V power supply K MATSUDA, M KUBO, K OHNAKA, J SHIBATA (Matsushita Electr. Ind. Co. Ltd., Osaka, Japan) IEEE Trans. Electron. Devices (USA), vol. 35, no. 8, pp. 1284--1288 (Aug. 1988) A monolithic photoreceiver consisting of an InGaAs p-i-n photodiode and a transimpedance preamplifier in which four junction field-effect transistors four level shift diodes, and a feedback resistor are integrated is described. This photoreceiver has been designed to operate with a single 5-V power supply for the purpose of simplifying the whole transmission system. Easily producible device structures were adopted to increase
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the yield of the photoreceivers. A circuit transimpedance of 965 fl and a 3--dB frequency of 240 MHz have been obtained for 5-V operation. Transmission of a 400-Mb/s NRZ signal has been achieved. (7 refs.)
OEIC and the research activity of the optoeleetronics joint research laboratory M HIRANO (Electrotech. Lab., Ibaraki, Japan) Optoelectron., Devices Technol. (Japan), vol. 2, no. 2, pp. 137-175 (Dec. 1987). [received: 27 Jul. 1988] Recent advances of optoelectronic integrated circuits are discussed with emphasis on the activity in the research project 'Optical Measurement and Control System'. The configurations and the performances of the OEICs developed so far are reviewed and some of the technological bottlenecks for improvement are discussed in relation to the research performed in OJL. (117 refs.) Material and technological developments for OEIC emitters and receivers J -P NOBLANC, J -C BOULEY, A SCAVENNEC (CNET, Bagneux, France) Optoclectron., Devices Technol. (Japan), vol. 2, no. 2, pp. 177-196 (Dec. 1987). [received: 27 Jul 1988] Due to the progress in III-V semiconductor optoelectronic devices and the development of optics-related applications, the advent of optoelectronic integration appears ineluctable in order to provide the optoelectronic integrated circuits (OEICs) for signal processing. The first low complexity emitters and receivers are mainly used for optical transmission. Some material and technological implications relating to the elementary devices -- lasers, photodetectors and transistors for OEICs -- are examined in both GaAs and InP based materials taking into account the influence on the devices of the differences in the material properties. Some examples of realisations are given, emphasising the key technological processes -- epitaxy, etching, etc. - - in order to define rather simple realisation procedures. (73 refs.) Monolithic GtAs/Si optoelectronic integrated circuits H K CHO1 (Lincoln Lab., MIT, Lexington, MA, USA) Optoelectron., Devices Technol. (Japan), vol. 2, no. 2, pp. 265-275 (Dec. 1987). [received: 27 Jul. 1988] The status of monolithic GaAs/Si (MGS) OE1Cs is reviewed and their future prospects are discussed. The MGS material now available is satisfactory for majority-carrier devices, but improvement in quality is needed for minority-carder devices. Recent progress in lasers, photodetectors, electronic circuits, and monolithic integration of Si and GaAs devices is described. In the near term, MGS OEICs are attractive for applications requiring low bandwidths.
High sco~fivity 1.3 wavelength region receiver OEIC with self-aligned junction FET T TERAKADO, S FUJITA, A SUZUKI (Opto-
Evaluation of deep states in amorphous-sificon/siliconnitride system from charge-coupled device characteristics S SEKINE, S NAKAMURA, S ODA, M MATSUMURA (Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Japan) Jpn. J. Appl. Phys. 2, Lett. (Japan), vol. 27, no. 7, pp. 1337-1339 (July 1988) Charge transfer characteristics have been investigated experimentally in amorphous-silicon charge--coupled devices under wide operation conditions. Deep states are found to cause the low and frequency-independent transfer efficiency. The deep states in the amorphoussilicon/silicon-nitride system have been separated into the bulk states in the amorphous-silicon layer and the interface states, for the first time. Their typical values are 7.0× 10 Is cm-3eV-land 1.2× 10 H cm -2eV-~ respectively. (15 refs.)
Integrated optoelectronics Detectors for muaoUthie optoelectronics D J JACKSON, J Y JOSEFOWICZ, D B RENSCH, D L PERSECHINI (Hughes Res. Labs., Malibu, CA, USA) Fiber Integr. Opt. (USA), vol. 7, no. 3, pp. 229-233 (1988) The authors present data on the electrical characteristics of the optical response of photodetectors integrated on GaAs substrates with FET devices. They compare the differences between devices fabricated on globally implanted areas versus the undoped semi-insulating regions of the same wafer. (8 refs.) A momUthieally integrated laGaAs/lnP photoreceiver operaflmg wi~ • siqgle 5-V power supply K MATSUDA, M KUBO, K OHNAKA, J SHIBATA (Matsushita Electr. Ind. Co. Ltd., Osaka, Japan) IEEE Trans. Electron. Devices (USA), vol. 35, no. 8, pp. 1284--1288 (Aug. 1988) A monolithic photoreceiver consisting of an InGaAs p-i-n photodiode and a transimpedance preamplifier in which four junction field-effect transistors four level shift diodes, and a feedback resistor are integrated is described. This photoreceiver has been designed to operate with a single 5-V power supply for the purpose of simplifying the whole transmission system. Easily producible device structures were adopted to increase
46
the yield of the photoreceivers. A circuit transimpedance of 965 fl and a 3--dB frequency of 240 MHz have been obtained for 5-V operation. Transmission of a 400-Mb/s NRZ signal has been achieved. (7 refs.)
OEIC and the research activity of the optoeleetronics joint research laboratory M HIRANO (Electrotech. Lab., Ibaraki, Japan) Optoelectron., Devices Technol. (Japan), vol. 2, no. 2, pp. 137-175 (Dec. 1987). [received: 27 Jul. 1988] Recent advances of optoelectronic integrated circuits are discussed with emphasis on the activity in the research project 'Optical Measurement and Control System'. The configurations and the performances of the OEICs developed so far are reviewed and some of the technological bottlenecks for improvement are discussed in relation to the research performed in OJL. (117 refs.) Material and technological developments for OEIC emitters and receivers J -P NOBLANC, J -C BOULEY, A SCAVENNEC (CNET, Bagneux, France) Optoclectron., Devices Technol. (Japan), vol. 2, no. 2, pp. 177-196 (Dec. 1987). [received: 27 Jul 1988] Due to the progress in III-V semiconductor optoelectronic devices and the development of optics-related applications, the advent of optoelectronic integration appears ineluctable in order to provide the optoelectronic integrated circuits (OEICs) for signal processing. The first low complexity emitters and receivers are mainly used for optical transmission. Some material and technological implications relating to the elementary devices -- lasers, photodetectors and transistors for OEICs -- are examined in both GaAs and InP based materials taking into account the influence on the devices of the differences in the material properties. Some examples of realisations are given, emphasising the key technological processes -- epitaxy, etching, etc. - - in order to define rather simple realisation procedures. (73 refs.) Monolithic GtAs/Si optoelectronic integrated circuits H K CHO1 (Lincoln Lab., MIT, Lexington, MA, USA) Optoelectron., Devices Technol. (Japan), vol. 2, no. 2, pp. 265-275 (Dec. 1987). [received: 27 Jul. 1988] The status of monolithic GaAs/Si (MGS) OE1Cs is reviewed and their future prospects are discussed. The MGS material now available is satisfactory for majority-carrier devices, but improvement in quality is needed for minority-carder devices. Recent progress in lasers, photodetectors, electronic circuits, and monolithic integration of Si and GaAs devices is described. In the near term, MGS OEICs are attractive for applications requiring low bandwidths.
High sco~fivity 1.3 wavelength region receiver OEIC with self-aligned junction FET T TERAKADO, S FUJITA, A SUZUKI (Opto-