MOS Devices-Design and Manufacture Edited byA. D. MILNE Publisher: Edinburgh University Press
186pp
s
The microelectronics group at Edinburgh University is well known as one of the UK's leading authorities on microelectronics technology. This book is an expanded version of a series of lectures given to industry by various staff members. It does not claim to be, and is not, a full-scale text book on the subject of MOS devices. The chapter headings and contents are, in the main, those to be found in a very large number of such text books. It is, however, very good to see the topics of production yield, quality control and failure diagnosis included in a student text. Unfortunately, in a book of this size, it is impossible to cover properly the enormous field indicated in the headings and in many places the treatment is sketchy. For example, the :overage of process measurement not only omits many practical and theoretical details, but also is not adequately backed-up with references to the literature. In summary, it could be said that this publication is justified (just) by virtue of its inclusion 9f topics too often omitted from similar texts. However, it falls well short of the quantity and quality of subject material required by a serious student and might therefore, be more appropriate for the market for which the original lecture series was intended- as background .'eading for workers in the industry who do not have a need for a more detailed treatment. B earing in mind the not-insignificant price for a small paperback volume, one is left with a :'eeling that it is a pity that rather more effort was not expended in converting the text from the 9 ;tatus of lecture notes to that of a book. JOHN BUTCHER
.arge Scale Integration -Devices, Circuits and Systems !dited by M. J. HOWES AND D. V. MORGAN ~ublisher: John Wiley, 1981
this is the fifth volume in the Wiley series on Solid State Devices and Circuits, and covers all tspects of present day LSI systems. There are seven chapters, each contributed by a leading tuthority in his field. The book is easy to read and assumes that the reader is familiar with iandamentals of semiconductor physics and circuit theory. The first chapter is an excellent ntroduction to the overall topics by D. H. Roberts of GEC. He reviews the historical 'volution of ICs and extrapolates to the future by outlining the objectives of the Japanese ndustrial Program on VLSI. The second chapter on LSI Bipolar Devices and Technology is again by an industrial cientist from Philips, Eindoven. After an introduction to bipolar technology and the nodelling of conventional bipolar components, several new approaches towards adapting ~ipolar technology to LSI are considered and their respective merits compared. Methods 73