Journal of Non-Crystalline Solids 117/118 (1990) 363-366 North-Holland
363
M~SSBAUER ANALYSIS OF SUPERCONDUCTIVITY IN TIN AND TIN-COPPER FILMS VAPOUR-DEPOSITED ON COLD SUBSTRATES
Masafumi TANIWAKI, Makoto UNETA (a), Kazuo KASAYA (b) and Masao MAEDA (c) Department of Electronic Engineering, Faculty of Engineering, Hokkaido University, Sapporo 060, Japan
The electronic structure and lattice vibration in the defective tin and amorphous tin-copper films vapour-deposited on cold substrates below 10 K were investigated by 119 Sn M~ssbauer effect. The copper-concentration dependence of the isomer shift and the recoilless fraction in the films corresponded well to that of the superconducting transition temperature, Tc. The metallic bonding in quenched tin-copper film increased with copper-concentration at 5 - 10 at~ and decreased at 10 - 20 at%. The Debye parameter, eD(-1), decreased with increasing copper concentration at 5 - 10 at% and recovered at 10 - 20 atZ. The dependence of Tc on copper concentration was explained qualitatively by applying these changes in the electronic structure and the lattice vibration to the McMillan's equation.
tunneling measurement 5, specific heat measure-
i. INTRODUCTION In many metals, the superconducting tran-
ment 6 and
MNssbauer
spectroscopy 7 for
sition temperature, Tc, is enhanced by vapour-
films.
quenching on cold substrates.
effect of the electronic structure,
was
This phenomenon
first found by Shalmikov for tin in 1938.I
However,
important
tin
the efforts to examine the
factor determining
another
Tc, on the Tc
Studies on the Tc enhancement by vapour quench-
enhancement are very poor,
ing in various metals were performed by Buckel
phization should change the electronic struc-
and Hilsch. 2'3
ture as well as the lattice vibration.
found
that
In their study,
an addition
of
it was also
impurity
during
quenching strengthens the Tc enhancement.
although the amor-
The
authors have investigated the lattice vibration
In
and the electronic structure in pure Sn vapour-
the case of the addition of copper to tin, Tc
quenched on cold substrates below 10 K by 119Sn
is about 4.3 K at 0 - 5 at~ and it increased
MNssbauer effect spectroscopy and estimated
abruptly to 7.2 K around 8 atZ and decreased
their contribution to the Tc enhancement. 8
gradually with increasing Cu concentration. 4
this article, we report the lattice vibration
It was explained that the Tc enhancement
is
and the electronic structure in vapour-quenched
attributed to the structural defects introduced
Sn1_x-Cu x films(O ~ x ~ 20) and their effect on
by quenching and that the addition of impurity
the Tc enhancement.
stabilizes the disorder,
In
i.e., the amorphous
structure.
The BCS theory established in 1957
suggested
that the lattice softening induced
The films of Sn-Cu(O, 5, 10, 20 at~Cu) were
by the structural defects in the quenched films
produced by vapour-quenching on cold substrates
increases Tc.
of quartz
This was examined intensively by
2. E X P E R I M E N T A L P R O C E D U R E S
glass
in a cryostat.
Present address: a) NTT Applied Electronics Laboratories, Musashino-shi, Tokyo 180, Japan b) NTT Optelectronics Laboratory, Atsugi-shi, Kanagawa Prefecture 243-01, Japan c) Kanazawa Institute of Technology, Nonoichi-cho, Ishikawa-ken 921, Japan
0022 3093/90/$03.50 (~) Elsevier Science Publishers B.V. (North-Holland)
During the
M. Taniwaki et al./MSssbauer analysis of superconductivity
364
Table I.
The parameters in Mossbauer spectra of vapeur-deposited tin-copper films.
sample
thickness (nm)
heat treatment
71
pure Sn
145
Sno.95Cuo.o 5
Sno.9oCuo.10
line position (mm/s)
as depodited
2.657(17)
annealed
2.612(17)
as deposited
2.660(5)
annealed
2.607(5)
152
8no.800u0.20
346
1.84(10) 1.75(8)
line area (~ mm/s)
1.084(64) 1.196(58)
3.14(28) 3.30(24)
3.57(4) 4.O9(4)
1.090(17)
6.11(13)
0.987(16)
6.34(17)
2.784(8)
2.52(3) 3.09(3)
1.240(26)
4.91 (17)
2.611(7)
1.119(21)
5.43(17)
as deposited
2.748(18)
3.28(9)
1.332(61)
6.86(50)
annealed
2.534(23)
3.83(14)
1.218(72)
7.33(60)
as deposited
2.692(8)
7.42(9)
1.379(28)
16.07(53)
annealed
2.531(6)
8.40(9)
1.271(18)
16.77(40)
of substrates was
After quenching,
the inner
part of the cryostat was rotated and MNssbauer s p e c t r u m of the d i s o r d e r e d or a m o r p h o u s film was m e a s u r e d at 4.2 K.
line w i d t h (mm/s)
as deposited
quenching, the t e m p e r a t u r e kept b e l o w 10 K.
(~)
annealed
112
Sno.85Cuo.15
line intensity
After it, the f i l m was
annealed at room temperature
in the vacuum of
1.0 0
O
0.9
the cryostat, by which the amorphous Sn trans-
[
I
i
I
i
formed into ~-tin. Then the M~ssbauer spectrum
0.2
of the annealed film was measured at 4.2 K. I{/)
EOI 3. RESULTS
E
Observed spectra were analyzed by non-linear least square method using a single Lorentzian. The o b t a i n e d
M~ssbauer
line
parameters
are
!/
-0.1
o
O
O
I
l
I
I
I
t a b u l a t e d in table I with the film thickness 08 which was estimated from Massbauer absorption area of the a n n e a l e d film.
The line p o s i t i o n
is s h o w n relative to BaSnO 3 at room t e m p e r a ture.
Figure
dependences
I shows
the
of the i s o m e r
Cu-concentration shift
in the as-
quenched film, the difference between the line
E E 07 o
03 0.6
I
0
I
5 I0 15 Cu concentration (%)
I
2O
width in the as-quenched film(I.S.) and that in the annealed film(AW) and the ratio of the line area in a s - q u e n c h e d nealed film.
film
to that in the an-
The isomer shift, which shows the
effective s-electron density at Sn nucleus, was nearly
constant at 0 - 5 at ~ and increased at
Figure I Massbauer parameters of vapour-deposited Sn-Cu films are shown as a function of Cu concentration. I.S., A W and area ratio show the line position, the difference in the line width and the ratio of the line area, r e s p e c t i v e l y ( d e tails in the text).
M. Taniwaki et al. / MSssbauer analysis of superconductivity 5 - 10 at %, and then d e c r e a s e d
at 10 - 20 %.
The line width in each as-quenched
s -I than that in the annealed film.
This shows
that the asymmetry
introduced
by q u e n c h i n g excluding around
of the structure
is s i m i l a r
in all Sn-Cu films,
the effect of copper
tin.
The recoilless
configuration
fraction ratio was
n e a r l y c o n s t a n t at 0 - 5 at % and d e c r e a s e d
at
5 - 10 at %.
We
It r e c o v e r e d
at 10 - 20 at %.
can say that the C u - c o n c e n t r a t i o n of the i s o m e r tion,
which
correspond
dependences
shift and the r e c o i l l e s s
reflects
well
the
lattice
to that of Tc.
clearly that the electronic tice vibration
frac-
vibration,
This indicates
state and the lat-
govern the superconducting
sition temperature
4.2 Lattice Vibration
film except
the pure tin f i l m was g r e a t e r by about 0.1 mm
tran-
in the quenched Sn-Cu films.
At a low
temperature
3 ER
pure tin and tin c o m p o u n d s isomer
shift,
of tin
atom in
is i d e n t i f i e d
w h e r e ER is the r e c o i l e n e r g y of 119Sn and The Debye parameter so(-1) is
oo(_1)=3~ 2kB (f F(~)~ l d ~ )-1 where F(~) is
phonon density
Debye p a r a m e t e r , recoilless
(3)
Oo(-1)
fraction
of states.
is
obtained
I.S., by the equation
(I) derived
ratio of the quenched film
and the annealed film and by adopting 140 K( ~tin) as the Debye t e m p e r a t u r e film.
in the a n n e a l e d
A remarkable
lattice
The Debye
temperature
minimum
softening
was
ob-
in the quenched
at 10 - 20 at%.
at 0 The
value was 106 K at 10 at%Cu.
4.3 Tc Enhancement The McMillan's ting
0.38+3.10ns --0.20n~--O.17nsnp
The
by t h e
from
by Lees and Flinn. 9
AS.=
(2)
Sn-Cu film decreased with Cu concentration
configuration
f
fraction
f = e x p ( - - 2kBOo(_l))
- 10 at %, and i n c r e a s e d
The e l e c t r o n
recoilless
is
served.
4. ANALYSIS ANDDISCUSSION 4.1 Electron Configuration
365
(1)
equation for the superconduc-
transition
temperature
impropved
by
Dynes I0 is
ns +np--4 where
and
ns
electrons, shift
at
the n u m b e r s
npare
respectively 4.2
temperature.
K
to
BaSnO 3 at
of free e l e c t r o n s
is derived
on the assumption
has metallic bonding (5sSp3).
tion and Z o b t a i n e d
The
per one atom, that
the
increase
decrease
in
of metallic
electron
are t a b u l a t e d
Z,
bonding
configurain table 2.
where ~* is Coulomb
and
pseudopotential(
= 0.I<<~).
<~> is defined by
< ~> =fa'(~)F(~)d~ /fa'(~)F(~)~ ~d~ where
i.e., the
is an average
az(~)
phonon interaction. constant
in 5s electrons
5p electrons,
(5)
--
k
is
N(O)<
gZ >
of the
electron-
Electron-phonon
coupling
(6)
M< wz>
the decrease
of c o v a l e n t b o n d i n g were observed. tion of Cu had the maximum
(4)
pure Sn or
(5s 2 5p 2) and cova-
By addition of Cu, the increase and
room
From the electron configuration,
lent bonding
Tc=exp(_ 1.04(1+X) ) 1.20 X-- ~*(1+ 0.62~)
and I.S. is the line
relative
the n u m b e r
Sn-Cu
of 5s and 5p
The addi-
effect at 10 at% Cu.
where
M, N(O)
electronic
and is the a t o m i c mass, the
density
and the average
of states
surface
over the F e r m i surface of the
square of the e l e c t r o n i c spectively.
at Fermi
<~2> is
m a t r i x element,
re-
366
M. Taniwaki et al./ MiSssbauer analysis of superconductivity Table 2.
The list of the electron configuration, the Debye parameter, the parameters in the McMillan's equation and the calculated Tc in fl -tin and as deposited Sn-Cu films. electronconfiguration
co(-1) Z N(O) [ K electrons states per K per atom eV atom
-tin
5s1"2565p2"744
140
1.024
0.186
93
9790
8.24
0.74
3.72
pure Sn
5s1"2755p 2"725
122
1.100
0.190
81
7440
8.24
0.99
5.52
Sno.95Cuo.05
5s1"2765p2"724
125
1.104
0.191
83
7813
8.24
0.95
5.38
Sn0.9oCu0.10
5s1"3295p 2"671
I06
1.316
0.202
71
5660
8.24
1.39
7.52
Sno.85Cu0.15
5s1"31LSp 2"686
116
1.256
0.199
77
6692
8.24
1.16
6.62
5s1-2905p2.710
123
1.160
0.194
82
7618
8.24
0.99
5.66
sample
Sno.8oCuo.20
<~2>
K2
e V A -2
X
Tc(cal) K
tained Tc 4 by Fortmann and Buckel is shown as a function of Cu concentration in Fig. 2. see a good agreement experimental
We can
between calculated Tc and
Tc.
In this M~ssbauer effect study, it was shown that the superconducting o6 I--
Tc in the vapour-quenched
Q
Sn-Cu films is attri-
buted to the lattice vibration
Ol
/ I
tronic
Tc(calc) Tc(exp) ........
I
..........
transition temperature
1
structure.
electronic
The
structure
and the elec-
contribution
of the
to the Tc enhancement
is
not so large comparing with that of the lattice 4
I 0
I I I 5 I0 15 Cu concentration (%)
I 20
softening, quenched lattice
Figure 2 The calculated superconducting transition temperature f r o m the M ~ s s b a u e r parameters, Tc(calc), and the e x p e i m e n t a l l y obtained Tc(exp) of v a p o u r - d e p o s i t e d Sn-Cu films are shown as a function of Cu concentration.
however,
Sn-Cu
films.
softening
and
significant
in
the
It is noted that the the
increase
in free
electrons by quenching are not independent each other 9 but occur simultaneously.
REFERENCES 1. A. Shalmikov, Nature 142(1938)74 2. W. Buckel and R. Hilsch, Z. Physik 132(1952)420 3. W. BuckelandR. Hilsch, Z. Physik
By assuming that ~2(~) is independent of ~,
<~
138(1954)109
4. J. Fortmann and W. Buckel, Z. Physik 162(1961)93
>, and N(O) are obtained from Debye param-
5. K. Knorr and N. Barth, Solid State Commun. 8 (1975)1085
eter
6. S. Ewert and W. Sander, Z. Physik 2~7(1971)21
OD(-1) and Z under Debye model and free
electron
model.
obtained
in ref. 8 was adopted.
parameters
As
in equation
the
value
of 8.24
The various
(4) and the calculated
To in the quenched film were listed in table 2. The calculated
Tc and the e x p e r i m e n t a l l y
ob-
7. J. Boltz and F. Pobell, Z. Physik R20(1975)95 8. M. Taniwaki, M. Uneta and M. Maeda, Japan. J. Appl. Phys. 26 Suppl. 26-3(1987)1321 9. J.K. Lees and P.A. Flinn, J. Chem. Phys. 48 (1967)882 10. R.C. Dynes, Solid State Commun. 10(1972)615