Multi-quantum well tandem cells

complicated

Patents

and

However,

as well as reducing automated

Applicant; Ball Semiconductor A spherical

solar diode

surrounded

by a Prype

with an n-type

electrically

photovoltaic

substrate

electric

In addition,

many

hetero-

element,

junction

superlattice

structures

are

formed

electrically

include

altern-

the P-type

ating

layers

adapt

the diode

of Si and

(as compared energy.

to convert to

are

This

includes

the diodes

higher

of each

diode.

the diodes

Diodes

a highly

to secure

is used

for

adjacent

to the sheet.

are exposed

efficient

solar

to create

the solar cell device is relatively

Satoi,

Yoshifumi

Kusakari,

The

market

straightforward

and

Patent number: I/S6355873

1 kW/satellite,

Publication date: March

approaching

12, 2002

market.

A

two

and

absorbs

Applicant: Canon,

another

Japan classified

crystal type using single-crystal icon, an amorphous or a compound

amorphous

or polycrystal

type using amorphous

semiconductor

Of these solar cells, much type. Despite

into a sil-

of the

Tandem

mechanical

its conversion

efficien-

limitation

cell, it has excellent

wavelengths.

the

form

of a film

amorphous

because

the

area

in

of the

type solar cell can be easily increased.

Also, it has a large photoabsorption

One of the reasons for a slow dissemination solar

cells is their

high

have been examined costs,

including

ofan

reduction

of

reducing

reduction

the

connection

of

and labour

invention

costs;

reduces

power,

the

number

The solar cell connection

of

step is

The

of electrical

ceils,

end

of

which

I998

these

almost

standards,

cells a

were

third

= 1.35 have

more

rapidly

the

to III-V

space solar cell market. above

30%

Inmztor: Alexandre

and

is

absorb

crystalographically

of

Beginning-ofate predicted.

end-of-life

efficiency

Applicant: Kaneka This

for

Corporation,

invention

an

relates

by

1.42 eV)

slower energy lattice-

to

for a solar battery amorphous

for solar Japan

a reverse module,

thin-film

biasing

particularly

solar

battery

module.

which

this relates to an apparatus

applies a reverse bias voltage,

breakdown electrode

voltage, and

a back

battery

module,

photovoltaic contributes removing

between electrode

to

power

which

sandwich layer

generation, portions

them to make into insulators

side

in a thin-film

semiconductor

short-circuited

lower than a

a substrate

a that

thereby ot oxidising

by means

of Joule

. June 2002

of

Freundlich

Reverse biasing apparatus battery module

solar

will be available

the GaAs cell (bandgap

with a cell that efficiently

the infrared.

these cells will exceed 25% AMO.

More specifically,

By the

expected

of

photo-

Publication date: April 16, 2002

produced

manufacturers.

the

GaInP/GaAs

of

with has

(a

quantum

of the conventional

extends

in excess of 30%

data indicate

of thin

nGaAs

of the conventional cell towards

tandem

inclusion

Patent number: US 6372980

solar cells

in space

for satellites

solar

Modelling

band

tandem

GaAs

tandem

be latticeso as to avoid

a two-terminal The

absorption

are limited

technology

photovoltaic

semiconductor

photons

invention,

and

interconnect.

of the GaInP

it should

region

a

or

defects in the cell.

may

in excess of 25% AM0

the

and

cell

by

top

have characteristics

wells in the intrinsic

be

insuffi-

in the

the thickness

p-i-n

a fundamental

incidence

crystalline

life efficiencies

or

narrower

a

cell should

required,

or longer

cells

or GaAs

having

to be absorbed

first

through

junction

one of the industry

by major

substituting

costs.

photons,

increased

bottom

few nm thick) narrow-bandgap

at

light

the

to a GaAs ot Ge substrate

apparatus

Efficiencies

materials

includes

lower energy

by a demand

represent

connections;

in the use of covering

and the material connections.

material

become

region;

receives

flux

cell of a tandem

photons

reducing

In this

of that

light transmitted

(sunlight

of

been reported.

on-board

layer: efficient

cell

that

tunnel

efficiencies

Driven

methods

of the production

conversion

number

of

the production

electric power generaring

and reduction

This

Various

to reduce

costs of a photoelectric ucifisation

cost.

kW/m?)

coefficient.

30%

solar

In recent years GaInP/GaAs with AM0

matched

panels

the

photon

producing

from

solar cell is provided.

have

energy

of

cell is not

of solar

cells overcome

absorption

to $1 bn

requirement

cell.

cell.

such that

some 300

of

absorbing

satellite

per watt. cells

of single

to

operating

a

form solar

cy being lower than that of the crystal type solar characteristics,

average

radiation. by

means

the price

that receives

bottom

by reducing

of the top GainP

is a bottom

capable

energy

GaInP

by

radiation

GaAs.

current

by

cient

has increased

size of $600m

higher

wavelength connected

type.

cell

operating

performance)

The bottom

- one

the

are achieved

is needed cell

use in space,

and vehicles

the firsr cell and absorbs

silicon

is expected

for

solar

electrical

telecommunications

tandem

cells

(and

What

cells

USA

orbit,

tandem

least

solar cells ate roughly

cells

$2000-3000

Photovoltaic module, production and non-contact treatment At present,

of Houston,

with

and

of the

limited

of the GaAs

efficiencies

in the bottom

a power

Currently,

Inuoztor:Akira Ishikawa

output

degradation

hardness

are mainly

cell to below 1 pm, to favour higher

a market

with

and radiation

for the

cells. As a

Yoshimitsu

Koji Tsuzuki,

over the next five years. This satellites

conventional

devices

photocurrent

on GaAs.

enough

thickness

in recent years.

inexpensive.

layers are not thick

Murakami,

for satellites

niche represents

Angstroms

Tsutomu

well tandem

Just the global

and only

Highest

for solar

particularly

generation degradation,

can be grown

of efficient

induced

mismatch

(a few hundred

tandem

of are

1.4%.)

Tsunenobu

Koichi Shimizu

Multi-quantum

defect

performance

result the efficiency

range alloys,

(Lattice

Takeyama,

Kasai,

Shozo

Masayuki

process the solal

The thin fabrication

Publication date: May 14, 2002

greatly

and/or

of photovoltaic

to avoid

GaAs semi-

in the

is about

of these materials

the

and

The manufacturing

of

ot

In,Ga,_&

to GaAs.

layers

Ge common

bandgaps

carrier

thin

Patent number: US 6388 1 H7

in low- or mediun-earth

panel

very thick)

with a high yield, and is

As a result,

cell device

is created.

to it

on an

existing

Applicant: University

of each diode.

diodes

a group

to one another

Hayashi,

contacting

of each diode’s surface.

assembly

panel

minority

easily automated.

Imentors:

one electrode

sheet

assembly

panel

light

a

and electrically

is applied,

on a majority

into

contact

are positioned

light

energy

a wire mesh

A dimpled

the other electrode

structures

to electrical

formed

and electrically

securing

The

1 eV light)

I.

connecting

with

such as ternary

In order

of

a method

used most

for 1.2 eV In0,2Ga0,8As

of the photovoltaic provides

conductors interest,

two

capable

of 0.4 to 2.0 pm is provided portion

commonly However,

lattice-mismatched

at least

a medium

so the invention

elements

SeBeTe.

Diodes

assembly.

When

layer.

srructures

an

method

are required.

connecting

connection

is described.

superlattice

of parts,

connection

to

substrates.

at least 10% or more of a light having

a wavelength

layer of semiconductor

matched

reliability.

number

elements,

absorbing

material

The

the

mass-production

Before

Inc, USA

high

and cost reduction,

and high speed treatment

Spherical shaped solar cell fabrication and panel assembly

surrounding

requires

for simplification

Photovoltaics Bulletin