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Near IR absorption in films of silicon containing oxygen
World Abstracts on Microelectronics and Reliability
483
6. MICROELECTRONICS--COMPONENTS, SYSTEMS AND EQUIPMENTS An operating system for a microprocessor-based interactive graphic terminal. M. G. SAMI and C. SERRELLl. Alia Freq. XLVII, (7) 566 (1978). The paper presents the definition, structure and implementation techniques adopted for the operating system of a graphic video terminal using microprocessors, that is being now realized at the Politecnico di Milano. The overall design philosophy is one of great modularity allowing the same basic frame hardware and software to be used for various complexities and capacities. To these basic requirements machine-independence should be guaranteed as far as possible. This is achieved in our case be avoiding techniques making use of features non general to all microprocessors, and recurring to suitable control and data structures for the operating system itself. While portability could not complete (the system being written in assembly language), a top-down approach to the system's design ensures ease of coding and translation. Double level metallurgy defect study. A. J. GREGORITSCH. Proc. IEEE Reliab. Phys. Syrup., San Diego (18 20 April 1978), p. 28. A double level metallurgy test chip having purposely induced n o n r a n d o m quartz insulation defects (cracks and holes) is used to study the behavior of the defects under accelerated temperature voltage stress conditions. Data obtained from this stress is analyzed and used to calculate activation energies for an Arrheniusvoltage dependent model. New acceleration factors for temperature, humidity, bias testing. N. L, SBAR and R. P. KOZAKIEWICZ. Proc. IEEE Reliab. Phys. Syrup., San Diego 118-20 April 1978), p. 161. New temperature-humidity acceleration factors for surface conductance (GI were determined. These can be used to relate device life in a high stress laboratory environment to device life in a normal use environment. Analytical expressions for the acceleration factors were derived for both encapsulated and unencapsulated test specimens. Lower acceleration factors were predicted for specimens encapsulated with DC 3-6550 RTV silicon rubber than for unencapsulated specimens. The new acceleration factors were used to predict failure rates due to electrolytic conduction on active devices. Model for MOS field-time-dependent breakdown. S~ P. Lt, S. PRUSSIN and J. MASERJIAN. Proc. IEEE Reliab. Phys. Syrup., San Diego (18-20 April 1978), p, 132. A quantitative model for M O S breakdown is derived and correlated with experiments. The data were obtained by enhancing the effect of ion emission on breakdown through controlled ion-implantation damage prior to gate oxidation in an otherwise normal and clean MOS process. A new electrostatic discharge failure mode. M. H. WOODS and G. GEAR. Proc. IEEE Reliab. Phy,s. Syrup.. San Diego ¢18 20 April 19781, p. 146. A new electrostatic discharge
failure mode was discovered which affects MOS LSI components in hermetic packages with nonconductive lids. Failure can be induced by spraying package lids with canned coolant. It is believed that charge from the freeze spray causes breakdown in the air-gap between the die surface and the lid. As a result, localized surface charging and field inversion occurs in the array, which produces leakage currents and circuit failure. The failure mode can be characterized by its recovery with either a strong UV exposure to the die surface or a DI water rinse.
The application of electrical overstre~s models to gate protective networks. D. C. WUNSCH. Proc. IEEE Reliab. Phys. Syrup., San Diego (18-20 April 1978~, p. 47. The study of electrical overstress failure in bipolar semiconductor devices from transients induced from nuclear electromagnetic pulses has resulted i n : / l t understanding of failure mechanisms, (2) models to predict failure levels, (3) test techniques, and (4) guidance for hardness assurance and reliability of gate input protective networks. The applicability of failure mechanisms and models for components of gate input protective networks such as resistors, diodes, and interconnect metallization stripes is shown. Retierences to representative detailed publications are given. Electrostatic damage susceptibility of semiconductor devices. L. A. SCHREIER. Proc. IEEE Reliab. Phys. Syrup., San Diego (18-20 April 1978), p. 151. Various semiconductor devices were tested for susceptibility to electrostatic discharge (ESD), A circuit similar to the ESD test circuit described in Military Specification M1L-M-38510 slash sheets was used for testing. Devices were also subjected to ESD levels equivalent to 75 percent of the device ESD degradation threshold and then burned-in to see if low-level ESD affects device reliability in system use. A ranking of devices in terms of ESD susceptibility and failure rate during burn-in is provided. Developing an approach to semiconductor failure analysis and curve tracer interpretation. J. M. PATTEKSON. Pr,c. IEEE Reliab. Phys. Syrup., San Diego (18-20 April 19781, p. 93. An approach to failure analysis of microelectronic devices is presented. This approach emphasizes the role of the curve tracer as an important tool used to determine what route an analysis should follow. The curve tracer provides information that indicates the nature of the failure mechanism and not just the failure mode, as does functional testing. Therefore, the curve tracer can aid in the decision making process in selecting the proper steps that should be followed to successfully capture the failure m e c h a n i s m A general format for failure analysis is outlined in which optional routes exist at decision points, and examples are given as to how the curve tracer can be used to aid in the selection of the appropriate route. It is also shown how several groups of analysis steps can be used to complement each other and thus provide more information about the cause of failure.
7. SEMICONDUCTOR INTEGRATED CIRCUITS, DEVICES AND MATERIALS Near IR absorption in films of silicon containing oxygen. S, O. SARI, P. HOLLINGSWORTH SMITH and H. OONA. J~ Phys. Chem. Solids 39, 957 (1978). A novel reflectance effect has been used to extract new information about oxygen impurity states in silane-vapor-deposited silicon films. A comparison to IR measurements in crystalline silicon yields a substantial wavelength shift of the characteristic 9-pm oxygen transition and may suggest increased film impurity absorption in comparison to the
M~ 18<6~c
bulk. By combining these experiments with measurements of film oxygen impurity concentration using X-ray emission spectroscopy, values for the oscillator strengths of the prominent oxygen lines in the near IR can be obtained. Interpretation of these data is given.
A study of AI/PtSi/Si thin film reaction kinetics by X-ray diffraction. C. C. GOLDSMITH, G. A. WALKER and M. J. SULLIVAN. Proc. IEEE Reliab. Phys. Syrup., San Diego
483
6. MICROELECTRONICS--COMPONENTS, SYSTEMS AND EQUIPMENTS An operating system for a microprocessor-based interactive graphic terminal. M. G. SAMI and C. SERRELLl. Alia Freq. XLVII, (7) 566 (1978). The paper presents the definition, structure and implementation techniques adopted for the operating system of a graphic video terminal using microprocessors, that is being now realized at the Politecnico di Milano. The overall design philosophy is one of great modularity allowing the same basic frame hardware and software to be used for various complexities and capacities. To these basic requirements machine-independence should be guaranteed as far as possible. This is achieved in our case be avoiding techniques making use of features non general to all microprocessors, and recurring to suitable control and data structures for the operating system itself. While portability could not complete (the system being written in assembly language), a top-down approach to the system's design ensures ease of coding and translation. Double level metallurgy defect study. A. J. GREGORITSCH. Proc. IEEE Reliab. Phys. Syrup., San Diego (18 20 April 1978), p. 28. A double level metallurgy test chip having purposely induced n o n r a n d o m quartz insulation defects (cracks and holes) is used to study the behavior of the defects under accelerated temperature voltage stress conditions. Data obtained from this stress is analyzed and used to calculate activation energies for an Arrheniusvoltage dependent model. New acceleration factors for temperature, humidity, bias testing. N. L, SBAR and R. P. KOZAKIEWICZ. Proc. IEEE Reliab. Phys. Syrup., San Diego 118-20 April 1978), p. 161. New temperature-humidity acceleration factors for surface conductance (GI were determined. These can be used to relate device life in a high stress laboratory environment to device life in a normal use environment. Analytical expressions for the acceleration factors were derived for both encapsulated and unencapsulated test specimens. Lower acceleration factors were predicted for specimens encapsulated with DC 3-6550 RTV silicon rubber than for unencapsulated specimens. The new acceleration factors were used to predict failure rates due to electrolytic conduction on active devices. Model for MOS field-time-dependent breakdown. S~ P. Lt, S. PRUSSIN and J. MASERJIAN. Proc. IEEE Reliab. Phys. Syrup., San Diego (18-20 April 1978), p, 132. A quantitative model for M O S breakdown is derived and correlated with experiments. The data were obtained by enhancing the effect of ion emission on breakdown through controlled ion-implantation damage prior to gate oxidation in an otherwise normal and clean MOS process. A new electrostatic discharge failure mode. M. H. WOODS and G. GEAR. Proc. IEEE Reliab. Phy,s. Syrup.. San Diego ¢18 20 April 19781, p. 146. A new electrostatic discharge
failure mode was discovered which affects MOS LSI components in hermetic packages with nonconductive lids. Failure can be induced by spraying package lids with canned coolant. It is believed that charge from the freeze spray causes breakdown in the air-gap between the die surface and the lid. As a result, localized surface charging and field inversion occurs in the array, which produces leakage currents and circuit failure. The failure mode can be characterized by its recovery with either a strong UV exposure to the die surface or a DI water rinse.
The application of electrical overstre~s models to gate protective networks. D. C. WUNSCH. Proc. IEEE Reliab. Phys. Syrup., San Diego (18-20 April 1978~, p. 47. The study of electrical overstress failure in bipolar semiconductor devices from transients induced from nuclear electromagnetic pulses has resulted i n : / l t understanding of failure mechanisms, (2) models to predict failure levels, (3) test techniques, and (4) guidance for hardness assurance and reliability of gate input protective networks. The applicability of failure mechanisms and models for components of gate input protective networks such as resistors, diodes, and interconnect metallization stripes is shown. Retierences to representative detailed publications are given. Electrostatic damage susceptibility of semiconductor devices. L. A. SCHREIER. Proc. IEEE Reliab. Phys. Syrup., San Diego (18-20 April 1978), p. 151. Various semiconductor devices were tested for susceptibility to electrostatic discharge (ESD), A circuit similar to the ESD test circuit described in Military Specification M1L-M-38510 slash sheets was used for testing. Devices were also subjected to ESD levels equivalent to 75 percent of the device ESD degradation threshold and then burned-in to see if low-level ESD affects device reliability in system use. A ranking of devices in terms of ESD susceptibility and failure rate during burn-in is provided. Developing an approach to semiconductor failure analysis and curve tracer interpretation. J. M. PATTEKSON. Pr,c. IEEE Reliab. Phys. Syrup., San Diego (18-20 April 19781, p. 93. An approach to failure analysis of microelectronic devices is presented. This approach emphasizes the role of the curve tracer as an important tool used to determine what route an analysis should follow. The curve tracer provides information that indicates the nature of the failure mechanism and not just the failure mode, as does functional testing. Therefore, the curve tracer can aid in the decision making process in selecting the proper steps that should be followed to successfully capture the failure m e c h a n i s m A general format for failure analysis is outlined in which optional routes exist at decision points, and examples are given as to how the curve tracer can be used to aid in the selection of the appropriate route. It is also shown how several groups of analysis steps can be used to complement each other and thus provide more information about the cause of failure.
7. SEMICONDUCTOR INTEGRATED CIRCUITS, DEVICES AND MATERIALS Near IR absorption in films of silicon containing oxygen. S, O. SARI, P. HOLLINGSWORTH SMITH and H. OONA. J~ Phys. Chem. Solids 39, 957 (1978). A novel reflectance effect has been used to extract new information about oxygen impurity states in silane-vapor-deposited silicon films. A comparison to IR measurements in crystalline silicon yields a substantial wavelength shift of the characteristic 9-pm oxygen transition and may suggest increased film impurity absorption in comparison to the
M~ 18<6~c
bulk. By combining these experiments with measurements of film oxygen impurity concentration using X-ray emission spectroscopy, values for the oscillator strengths of the prominent oxygen lines in the near IR can be obtained. Interpretation of these data is given.
A study of AI/PtSi/Si thin film reaction kinetics by X-ray diffraction. C. C. GOLDSMITH, G. A. WALKER and M. J. SULLIVAN. Proc. IEEE Reliab. Phys. Syrup., San Diego