Physica E 117 (2020) 113844
Contents lists available at ScienceDirect
Physica E: Low-dimensional Systems and Nanostructures journal homepage: http://www.elsevier.com/locate/physe
Numerical analysis of DNA-based implementation for terahertz switchable metamaterial absorber Min Zhong Hezhou University, Hezhou 542899, China
A R T I C L E I N F O
A B S T R A C T
Keywords: Metamaterial Absorber LSP
In this paper, a tunable and switchable metamaterial absorber is proposed and simulated based on DNA mate rials, graphene and Dirac semimetal. Resonance behaviors of this absorber can be switched from an absorption peak to an absorption band based on the properties of DNA particles: high resistance mode and low resistance mode. The absorption peak and absorption band are excited by the local surface plasmons (LSP) modes and surface plasmon polariton (SPP) modes resonance. The carrier mobility μ of graphene layers is optimized in three regions (Dirac semimetal support area, DNA support area, and suspended area) to enhance the absorption peak and band. These resonance behaviors based on the high and low resistance modes of DNA particles are optimized through changing the external voltage conditions of graphene layers. Moreover, the Fermi energy of Dirac semimetal strips can also be used to optimize these performances. The proposed structure can be applied as optical memristors or optical gates based on the DNA switching property.
1. Introduction In recent years, a novel material-biological material based on kinds of proteins (or DNA) has attracted attention [1–7]. A variety of proteins are revealed with characteristic-switchable property, such as high resistance state (“Off” mode) or low resistance state (“On” mode). Spe cific, four kinds of proteins can be revealed at a DNA string. It is found that two kinds of proteins show high resistance state while the other two kinds of proteins reveal low resistance state [8]. For example, a 100 nm DNA has a resistance of 5 � 1010 under the high resistance state, while a 100 nm DNA has a resistance of 5 � 109 under the low resistance state [9]. A variety of DNA materials are applied in photo electric devices based on its unique properties [10–13]. On the one hand, the design and development of metamaterial absorbers has attracted the interest of many researchers [14–17]. On the other hand, switchable metamaterials based on DNA materials are applied in revealing photoelectric devices. The development of materials (for example resistance random memory) with high density and high read-write characteristics is the current trend [18]. The basic principle of resistance random memory is switched its resistance between the low resistance state and the high resistance state through using external conditions (current pulse or voltage pulse) [19]. Therefore, it makes sense to design and fabricate switchable meta material absorbers [20,21]. Unfortunately, metamaterials based on DNA materials can only achieve the conversion of two properties (high
resistance state or low resistance state), and cannot achieve continuous modulation of the two properties. Therefore, it is interesting to combine DNA materials with tunable metamaterials to develop switchable met amaterials that can be finely regulated. For example, graphene is often used to develop tunable metamaterial devices. Mahboobeh Faraji et al. proposed a tunable terahertz absorber based on graphene metamaterial, which is modulated through changing externally biased voltage [22]. Recently, Dirac semimetal has attracted the attention of many re searchers [23–25]. The resonance properties of Dirac semimetal can be controlled by Fermi energy [26]. It is found that the graphene and Dirac semimetal are both modulated through externally conditions, which facilitates the development of tunable and switchable metamaterial absorbers based on DNA materials. In this paper, a tunable and switchable metamaterial absorber is proposed and simulated based on DNA materials, graphene and Dirac semimetal. This absorber exhibits two distinct resonance properties based on the high and low resistance states of DNA strips. Both reso nance properties can be modulated through changing the externally conditions of graphene layers and Dirac semimetal strips. Finally, the effect of temperature on the resonance properties is also revealed.
E-mail address:
[email protected]. https://doi.org/10.1016/j.physe.2019.113844 Received 24 August 2019; Received in revised form 8 November 2019; Accepted 19 November 2019 Available online 21 November 2019 1386-9477/© 2019 Elsevier B.V. All rights reserved.
M. Zhong
Physica E: Low-dimensional Systems and Nanostructures 117 (2020) 113844
2. Structural design and theoretical model
Table 1 All of parameters of the unit cell.
2.1. Structural design The proposed unit cell is shown in Fig. 1. This unit consists of five layers of materials. The top layer consists of four Dirac semimetal strips, a metal square, and four protein particles. The intermediate medium layer is SiO2. The bottom layer is a gold layer. Four DNA particles connect the Dirac semimetal strips and a metal square together. The specific structural parameters are shown in Table 1.
H3
H4
Value(nm)
500
280
70
80
2
380
160
�Ω� gkF e2 ΩG 2 24πℏ
! Imσ Ω ¼
(6)
(7)
( � � �2 # � ) Z εc � gkF e2 4 π2 T GðεÞ GðΩ 2Þ 1 þ þ 8Ω εd ε 24π 2 ℏ Ω 3 EF Ω2 4ε2 0 (8)
Here, EF represents the Fermi level, GðEÞ ¼ nð EÞ nðEÞ with nðEÞ represents the Fermi distribution Function. kF ¼ EF =ℏvF2 represents the Fermi momentum, vF2 ¼ 106 m=s represents the Fermi velocity. Ec rep resents the cutoff energy. Finallyε ¼ E=EF , εc ¼ Ec =EF , and Ω ¼ ℏω=EF . The permittivity of the Dirac semimetal strips can be given as follows [32]:
2.2.2. Theoretical model of the graphene thin film In this paper, two graphene layers are applied in the proposed unit cell. The surface conductivity of both graphene layers can be given as follows [28,29]:
ε ¼ εb þ iσ=ωε0
(3)
(9)
Here, εb represents the effective background dielectric [33].
Specifically, the electrical conductivity of graphene can be theoret ically calculated based on the Kubo formula, as follows: " !# μc e2 kB T μc kB T � σ intra ðω; τ; T; μc Þ ¼ j 2 þ (4) þ 2 ln e kB T πℏ ðω jτ 1 Þ jτ 1 Þℏ jτ 1 Þℏ
H2
Reσ ðΩÞ ¼
Here, A(f) is the simulated absorption, R(f) is the reflection.
� e2 2jμc j ðω ln 2jμc j þ ðω 4πℏ
H1
2.2.3. Dirac semi-metal model Dirac semimetal strips are given through the model [31]:
(2)
j
W2
Here, vF1 ¼ 0:9 � 10 m=s represents the Femi velocity. a0 represents a constant 9 � 1016 m 2 V 1 . VD represents the voltage offset [30]. Vg represents the external base voltage. It can be found that the value of the chemical potential of graphene layer is directly related to the external base voltage. Therefore, the electromagnetic resonance behaviors of graphene layer can be modulated by external base voltage.
Here, ωp ¼ 4:35π � 1015 s 1 stands for the plasma frequency, and γ ¼ 3:1916π � 1013 s 1 stands for the collision frequency. Simulations are revealed by HFSS in this paper. The layer of Au is thick enough that the transmission of incident waves is zero. Therefore, the absorption is achieved:
σ inter ðω; τ; T; μc Þ ¼
W1
6
2.2.1. The model of the metal In this paper, the complex relative permittivity of the gold layer is given through the Drude model [27]: . � εAu ¼ 9 ω2p ω2 þ iωγ (1)
σ g ¼ σ intra þ σinter
P
relaxation time, μc represents the chemical potential, as follows: ffiffiffi qffiffiffi�ffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffi�� jμc j ¼ ℏυF1 π �ao Vg VD �
2.2. Theoretical model
A(f) ¼ 1-R(f)
Parameter
3. Results and discussion Recently years, biological materials (protein and organic material) based on proteins are proposed and revealed. These kinds of biological materials are applied in the development of a variety of functional de vices based on its switchable characteristic. Some reported results indicate that proteins can reveal two states: high resistance state and low resistance state. In the proposed structure, DNA nanoparticles (orange peel) are also used to achieve a switchable metamaterial absorber [34]. Some reported results indicate that the 100 nm length DNA nano particles have a resistance of 5 � 109for the low resistance state and 5 � 1010 for the high resistance state, which is consists with the reported work [35]. Fig. 2 shows the simulated absorption spectrum with high and low resistance states of DNA nanoparticles (orange peel). Both ab sorption peaks are obtained under the same parameters. For the high resistance state, an absorption peak (52.4%) is found at resonance fre quency 0.63 THz. For the low resistance state, an absorption band (average absorption rate 68.3%) is found at resonance frequency 1.33 THz 1.48 THz. It is found that the resonance frequency is offset by 0.7 THz from the high resistance state absorption peak. The resistance property of DNA nanoparticles directly determines the conversion of the proposed metamaterial absorber at two resonance frequency points. A switchable metamaterial absorber is achieved based on using DNA nanoparticles. In order to reveal the physical mechanism of these two absorption peaks in Fig. 2, the electric field intensity distributions are calculated at two resonance frequency points on the plane located on the surface of the Dirac semimetal, DNA and metal square, as show in Fig. 3 and Fig. 4. For the high resistance state, local surface plasmons (LSP) modes are
� (5)
Here, the ω represents the spatial frequency, τ represents the
Fig. 1. (a) The three-dimensional structure diagram of the designed unit. (b) Top view of the unit of design. (c) A cross section of a designed unit. The Y-axis is 0. The yellow parts are metal layers. The blue parts are graphene layers. The red parts are Dirac semimetal strips. The gray part is SiO2 layer. The green parts are DNA particles. 2
M. Zhong
Physica E: Low-dimensional Systems and Nanostructures 117 (2020) 113844
higher than the absorption peak in Fig. 2. The resonance properties of graphene films are directly related to the carrier mobility μ. This is because the surface conductivity of graphene films is related to the doping degree. Carrier mobility μ is determined by a number of factors, for example, residue impurity, growing or trans ferring method, point defects, and so on. Some reported work indicated that the carrier mobility of graphene films using the exfoliated method is always exceed 230; 000cm2 =ðV *sÞ, while in the chemical vapor depo sition method, it is always lower than 10000cm2 =ðV *sÞ [37]. In the proposed unit cell, the top graphene film is distributed in different re gions: Dirac semimetal support area, DNA support area, and suspended area. Therefore, it is meaningful to optimize the carrier density in different supporting regions before studying the effect of the resonance properties of graphene films on the absorber performance. The simu lated absorption spectrum with high resistance mode and low resistance mode are shown in Fig. 5 and Fig. 6. For the high resistance mode, carrier mobility μ in the DNA support area, Dirac semimetal support area, and suspended area is set as 6500cm2 =ðV *sÞ, 6500cm2 =ðV *sÞ, and 230; 000cm2 =ðV *sÞ. First, the carrier mobility μ is increased from 6500cm2 =ðV *sÞ to 9500cm2 =ðV *sÞ in the DNA support area while other areas remain unchanged. The ab sorption performances of the proposed metamaterial absorber with different carrier mobility in the DNA support area is shown in Fig. 5(a). It is found that the absorption amplitude and resonance frequency are varied little, which indicates that the carrier mobility μ in DNA support area plays a secondary factor on absorption performances. When the carrier mobility μ in the suspended area is set as 230; 000cm2 =ðV *sÞ, 220; 000cm2 =ðV *sÞ, 210; 000cm2 =ðV *sÞ, and 200; 000cm2 =ðV *sÞ, reso nant behaviors are found in Fig. 5(c). Absorption peaks are almost overlap (the absorption amplitude and resonance frequency are varied little), which indicates that the influence of carrier mobility in the sus pended region on the resonance performance can be basically ignored. For the carrier mobility μin the Dirac semimetal support region 6500cm2 =ðV *sÞ, 7500cm2 =ðV *sÞ, 8500cm2 =ðV *sÞ, and 2 9500cm =ðV *sÞare respectively chosen while other areas remain un changed. It can be found that the absorption peak is increased, as shown in Fig. 5(b). This is due to the absorption peak is mainly derived from two loss mode [38–40]. One loss mode is based on the LSP mode reso nance that the incident wave is trapped by the electromagnetic field induced on the local surface of the metal structure, resulting in energy loss. Another loss mode is based on the SPP mode resonance on the surface of the Dirac semimetal and DNA materials, resulting in Ohmic loss. The resonance strength of LSP mode and SPP mode are enhanced with the carrier mobility μ increasing in the Dirac semimetal support area, which results in the increase of absorption loss of electromagnetic wave. Moreover, the absorption peak is shifted to lower resonance fre quencies. These results reveal that the values of carrier mobility μ in Dirac semimetal support area have an important influence on absorption performances. For the low resistance mode, the carrier mobility μ is also optimized based on the same method which is applied in Fig. 5. The simulated absorption spectrum is shown in Fig. 6(a–c). It can be found that the proposed metamaterial absorber exhibits resonance absorption behav iors (absorption amplitude and resonance frequency variation) similar to that shown in Fig. 5(a–c). However, when the carrier mobility μ is increased in the DNA support area, the absorption peak is also increased and shifted to lower resonance frequencies. This absorption perfor mance is based on the DNA materials revealing the conductivity prop erties, which is similar to the Dirac semimetal support area. It should be indicated that the variation range of absorption performances in Figs. 5 (a) and Fig 6(a) are smaller than that in Figs. 5 (b) and Fig 6(b). This is because the surface conductivity of DNA support area is lower than that in the Dirac semimetal support area, which leads to the electromagnetic energy loss based on LSP and SPP modes are lower than that in the metal support area. Therefore, three optimized carrier mobility μ are obtained
Fig. 2. Simulated absorption spectrum based on high resistance mode (black) and low resistance mode (red).
Fig. 3. Electric field intensity distribution of the absorption peak in Fig. 2. (a) 0.63 THz. (b) 0.61 THz. (c) 0.56 THz. (d) 0.66 THz.
excited on the edges of four Dirac semimetal strips, and a surface plas mon polariton (SPP) mode is found on the surface of the metal square, as shown in Fig. 3 (a). When the calculated frequency deviates from the resonant frequency, the resonance strength of the LSP and SPP modes is greatly impaired, as shown in Fig. 3(b–d). The resonances of LSP and SPP modes on Dirac semimetal strips and metal square lead to the ab sorption peak in Fig. 2. For the low resistance state, LSP and SPP modes are also excited on the Dirac semimetal strips and metal square, as shown in Fig. 4(a and b). Moreover, SPP modes are found on the surface of four DNA materials, as shown in Fig. 4(a and b). This is due to these DNA particles reveal electrical conductivity properties based on the low resistance state. Since the electrical conductivity of the protein structure is lower than that of Dirac semimetal strips, the resonance strength SPP mode on Dirac semimetal surfaces is higher than that on DNA particles surfaces. Moreover, the plasmonic hybridization between LSP and SPP modes is revealed on the Dirac semimetal strips, metal square, and DNA materials [36], as shown in Fig. 4(a and b). These strong resonant be haviors result in the appearance of absorption band in Fig. 2. When the calculated frequency deviates from the absorption band, the resonance strength of the LSP and SPP modes is greatly reduced, and the plasmonic hybridization between LSP and SPP modes is failure, as shown in Fig. 4(c and d). The resonance strength of LSP and SPP modes is significantly higher than that in Fig. 3(a), which results in the absorption band is 3
M. Zhong
Physica E: Low-dimensional Systems and Nanostructures 117 (2020) 113844
Fig. 4. Electric field intensity distribution of the absorption band in Fig. 2. (a) 1.33 THz. (b) 1.48 THz. (c) 1.2 THz. (d) 1.7 THz.
Fig. 5. The absorption spectrum based on the high resistance mode of DNA materials. (a) Carrier mobility in DNA support area while other regions are 6500cm2 =ðV *sÞ and 230; 000cm2 =ðV *sÞ. (b) Carrier mobility in Dirac semi metal support area while other regions are 6500cm2 =ðV *sÞ and 230; 000cm2 = ðV *sÞ. (c) Carrier mobility in suspended area while other regions are 6500cm2 = ðV *sÞ and 6500cm2 =ðV *sÞ.
Fig. 6. The absorption spectrum based on the low resistance mode of DNA materials.(a) Carrier mobility in DNA support area while other regions are 6500cm2 =ðV *sÞ and 230; 000cm2 =ðV *sÞ. (b) Carrier mobility in Dirac semi metal support area while other regions are 6500cm2 =ðV *sÞ and 230; 000cm2 =ðV *sÞ. (c) Carrier mobility in suspended area while other regions are 6500cm2 =ðV *sÞ and 6500cm2 =ðV *sÞ.
(DNA support area 9500cm2 =ðV *sÞ, Dirac semimetal support area 8500cm2 =ðV *sÞ, suspended area 230; 000cm2 =ðV *sÞ), which are applied in achieved an optimized absorption spectrum, as shown in Fig. 7.
In order to increase the absorption peak of the proposed meta material absorber, the chemical potential μc of graphene film is adjusted 4
M. Zhong
Physica E: Low-dimensional Systems and Nanostructures 117 (2020) 113844
Fig. 9. Simulated absorption spectrum as function of the external voltage dif ference. (a) Based on the high resistance mode of DNA. (b) Based on the low resistance mode of DNA.
Fig. 7. The absorption spectrum based on three optimized carrier mobility.
(DNA support area 9500cm2 =ðV *sÞ, Dirac semimetal support area 8500cm2 =ðV *sÞ, suspended area 230; 000cm2 =ðV *sÞ). According to Equation (6), the chemical potential μc is directly related to the external voltage conditions. Therefore, the chemical potential μc can be modu lated by changing the external voltage conditions. In the third set of simulations, the chemical potential μc of two graphene films in the proposed unit cell is increased. The absorption peak is increased at the initial stage, reached the maximum value, and then decreased, as shown in Fig. 8. At the same time, the resonant frequencies are shifted to higher frequencies, which is similar to the reported work [29]. However, the bandwidth is reduced with the chemical potential μc increasing, which is different with reference [29]. Moreover, in order to achieve a new ab sorption performance which is different with reference [29], a new adjustment method is applied: keeping the chemical potential μc of the underlying graphene film unchanged, and increasing the chemical po tential μc of the top graphene film alone. The absorption peak is also increased with the chemical potential μc difference increasing between two graphene films, as shown in Fig. 9. The absorption peak is shifted to lower resonance frequencies, which is different with the results in Fig. 8. Dirac semimetal can be also modulated by external conditions. This is due to the resonance properties of Dirac semimetal are sensitive to Fermi energy. Fig. 10 shows the real and imaginary parts of dynamic conductivity of Dirac semimetal. The Fermi energy is increased from 50
Fig. 10. (a) The real parts of the conductivity for Dirac semimetal under different Fermi levels. (b) The imaginary parts of the conductivity for Dirac semimetal under different Fermi levels.
meV to 70 meV, which leads to the real and imaginary parts of dynamic conductivity of Dirac semimetal change. Therefore, it is necessary to optimize the effect of Fermi energy on the properties of metamaterial absorbers. Fig. 11 shows the simulated absorption spectrum with different Fermi energy. The absorption peaks are enhanced with high and low resistance states of DNA particles. The increase in absorption peak is significantly higher than that in Figs. 5 and 7 due to the ab sorption peak is excited by the LSP mode resonance and SPP mode resonance on the Dirac semimetal surface. The enhancement of Fermi energy results in the increase of electromagnetic energy dissipation based on LSP resonance and SPP mode resonance. Moreover, the ab sorption peak is shifted to higher resonance frequencies, as shown in Fig. 9. Finally, the effect of temperature on the resonance behaviors of Dirac semimetal is also revealed, as shown in Fig. 12. The temperature is uniformly increased. It can be found that the absorption peak is enhanced and shifted to higher resonance frequencies. The LSP and SPP resonance on the surface of Dirac semimetal in the unit cell is increased, which lead to the absorption peak enhance. At the same time, the reflection loss of electromagnetic wave caused by two graphene films is reduced [41], which leads to the absorption property reveal a little variation.
Fig. 8. Simulated absorption spectrum as function of the external voltage level. (a) Based on the high resistance mode of DNA. (b) Based on the low resistance mode of DNA. 5
M. Zhong
Physica E: Low-dimensional Systems and Nanostructures 117 (2020) 113844
References [1] Y.C. Hung, W.T. Hsu, T.Y. Lin, L. Fruk, Photoinduced write-once readmanytimesmemory device based on DNA biopolymer nanocomposite, Appl. Phys. Lett. 99 (2011) 253301. [2] S. Park, T.A. Taton, C.A. Mirkin, Array-based electrical detection of DNA with nanoparticle probes, Science 295 (5559) (2002) 1503–1506. [3] B. Yurke, A.J. Turberfield, A.P. Mills, F.C. Simmel, J.L. Neumann, A DNAfuelledmolecular machine made of DNA, Nature 406 (2000) 605–608. [4] M.K. Hota, M.K. Bera, B. Kundu, S.C. Kundu, C.K. Maiti, A natural silk fibroinprotein-based transparent bio-memristor, Adv. Funct. Mater. 22 (2012) 4493–4499. [5] B. Qu, Q. Lin, T. Wan, H. Du, N. Chen, X. Lin, D. Chu, Transparent and flexible write-once-read-many(WORM) memory device based on egg albumen, J. Phys. D Appl. Phys. 50 (31) (2017) 315105. [6] H.L. Chu, S.C. Chiu, C.F. Sung, W. Tseng, Y.C. Chang, W.B. Jian, Y.-C. Chen, C.J. Yuan, H.-Y. Li, F.X. Gu, M.D. Ventra, C.-C. Chang, Programmable redox state ofthe nickel ion chain in DNA, Nano Lett. 14 (2014) 1026–1031. [7] C. Mukherjee, M.K. Hota, D. Naskar, S.C. Kundu, C.K. Maiti, Resistive switchingin natural silk fibroin protein-based bio-memristors, Phys. Status Solidi A 210 (2013) 1797–1805. [8] G.P. Triberis, M. Dimakogianni, DNA in the material world: electrical properties and nano-applications, Recent Pat. Nanotechnol. 3 (2009) 135–153. [9] L. Cai, H. Tabata, T. Kawai, Self-assembled DNA networks and their electrical conductivity, Appl. Phys. Lett. 77 (2000) 3105–3106. [10] Hsueh-Liang Chu, Shao-Chien Chiu, Ching-Feng Sung, Wellen Tseng, YuChuan Chang, Wen-Bin Jian, Yu-Chang Chen, Chiun-Jye Yuan, Hsing-Yuan Li, Frank X. Gu, Massimiliano Di Ventra, Chia-Ching Chang, Programmable redox state of the nickel ion chain in DNA, Nano Lett. 14 (2014) 1026–1031. [11] Chen Zhou, Haimin Zou, Chengjun Sun, Dongxia Ren, Jing Chen, Yongxin Li, Signal amplification strategies for DNA-based Surface Plasmon resonance biosensors, Biosens. Bioelectron. 117 (2018) 678–689. [12] Xiaoling Wu, Liguang Xu, Wei Ma, Liqiang Liu, Hua Kuang, Wenjing Yan, Libing Wang, Chuanlai Xu, Gold core-DNA-silver shell nanoparticles with Intense Plasmonic chiroptical activities, Adv. Funct. Mater. 6 (2015) 850–854. [13] N.A. Kasyanenko, Mikhail Varshavskii, Eugenii Ikonnikov, Evgenii Tolstyko, Roman Belykh, P.A. Sokolov, Vladimir Bakulev, Valery Rolich, Konstantin Lopatko, DNA modified with metal nanoparticles: preparation and characterization of ordered metal-DNANanostructures in a solution and on a substrate, J. Nanomater. 6 (2016) 1–12. [14] Yong Zhi Cheng, Mu Lin Huang, Hao Ran Chen, Zhen Zhong Guo, Xue Song Mao, Rong Zhou Gong, Ultrathin six-band polarization-insensitive perfect metamaterial absorber based on a cross-cave patch resonator for terahertz waves, Materials 10 (2017) 591–603. [15] Mu Lin Huang, Yong Zhi Cheng, Zheng Ze Cheng, Hao Ran Chen, Xue Song Mao, Rong Zhou Gong, Design of a broadband tunable terahertz metamaterial absorber based on complementary structural graphene, Materials 11 (2018) 540–549. [16] Hao Luo, Yongzhi Cheng, Dual-band terahertz perfect metasurface absorber based on bi-layered all dielectric resonator structure, Opt. Mater. 96 (2019) 109279–109283. [17] Haijun Zou, Yongzhi Cheng, Design of a six-band terahertz metamaterial absorber for temperature sensing application, Opt. Mater. 88 (2019) 674–679. [18] C. Hoessbacher, Y. Fedoryshyn, A. Emboras, A. Melikyan, M. Kohl, D. Hillerkuss, C. Hafner, J. Leuthold, The plasmonic memristor: a latching optical switch, Optica 1 (4) (2014) 198–202. [19] S. Kumar, S.K. Raghuwanshi, Design of optical reversible logic gates using electrooptic effect of lithiumniobate based Mach–Zehnder interferometers, Appl. Opt. 55 (21) (2016) 5693–5701. [20] Yongzhi Cheng, Rongzhou Gong, Jingcheng Zhao, A photo excited switchable perfect metamaterial absorber/reflector with polarization-independent and wideangle for terahertz waves, Opt. Mater. 62 (2016) 28e33. [21] Yongzhi Cheng, Rongzhou Gong, Zhengze Cheng, A photoexcited broadband switchable metamaterial absorber with polarization-insensitive and wide-angle absorption for terahertz waves, Opt. Commun. 361 (2016) 41–46. [22] Mahboobeh Faraji, MohammadKazem Moravvej-Farshi, Leila Yousefi, Tunable THz perfect absorber using graphene-based metamaterials, Opt. Commun. 355 (2015) 352–355. [23] Liang Tian, Quinn Gibson, Mazhar N. Ali, Minhao Liu1, R.J. Cava, N.P. Ong, Ultrahigh mobility and giant magnetoresistance inthe Dirac semimetal Cd3As2, Nat. Mater. 14 (2015) 280–284. [24] Z. K. Liu, J. Jiang, B. Zhou, Z. J.Wang, Y. Zhang, H. M.Weng, D. Prabhakaran, S-K. Mo,H. Peng, P. Dudin, T. Kim, M. Hoesch, Z. Fang, X. Dai5, Z. X. Shen, D. L. Feng, Z. Hussainand Y. L. Chen,A Stable Three-Dimensional Topological Diracsemimetal Cd3As2,NATURE MATERIALS | ADVANCE ONLINE PUBLICATION 1-5. [25] Zhongkai Liu, Bo Zhou, Yong Zhang, Zhijun Wang, Hongming Weng, Dharmalingam Prabhakaran, S.K. Mo, Zhixun Shen, Fang Zhong, Xi Dai, Zahid Hussain, Yulin Chen, Discovery of a three-dimensional topological Dirac semimetal, Na3Bi, Science 343 (2014) 864–867. [26] kjYi Su, Lin Qi, Zhai Xiang, Xin Luo, Lingling Wang, Controlling terahertz surface plasmon polaritons in Dirac semimetal sheets, Opt. Mater. Express 4 (2018) 884–892. [27] J. Wang, Y. Chen, X. Chen, J. Hao, M. Yan, M. Qiu, Photothermalreshaping of gold nanoparticles in a plasmonic absorber, Opt. Express 19 (15) (Jul. 2011) 14726–14734. [28] G.W. Hanson, Dyadic Green’s functions and guided surface waves for a surface conductivity model of graphene, J. Appl. Phys. 103 (2008), 064302.
Fig. 11. Simulated absorption spectrum as function of the Fermi levels. (a) Based on the low resistance mode of DNA. (b) Based on the high resistance mode of DNA.
Fig. 12. Simulated absorption spectrum as function of the temperatures. (a) Based on the low resistance mode of DNA. (b) Based on the high resistance mode of DNA.
4. Conclusion This paper is presented a tunable metamaterial absorber is proposed and simulated based on DNA materials, graphene, and Dirac semimetal. The proposed absorber shows an absorption peak with the high resis tance state of DNA particles, while an absorption band is achieved with the low resistance state. The absorption performances are enhanced through optimizing the external voltage conditions of graphene or the Fermi energy of Dirac semimetal strips. The effect of temperature on the resonance properties is also revealed. The proposed structure can be applied as optical memristors or optical gates based on the DNA switching property. Acknowledgments This research was financially supported by the Doctor’s Scientific Research Foundation(No. HZUBS201503), the Young and Middle Teachers’ Basic Ability Improvement Project of Guangxi (No. KY2016YB453), the Mathematical Support Autonomous Discipline Project of Hezhou University (No. 2016HZXYSX01), and the Innovation and Entrepreneurship Students Project of Hezhou University (Nos. 201611838018, 201911838062, 201911838071, 201911838179). 6
M. Zhong
Physica E: Low-dimensional Systems and Nanostructures 117 (2020) 113844
[29] Rui Xing, Changbin Dong, Bofeng Zhu, Yixiao Gao, Shuisheng Jian, Numerical analysis on ribbon-array-Sheet Coupled graphene terahertz absorber, IEEE Photonics Technol. Lett. 28 (2016). [30] C. Xu, Y. Jin, L. Yang, J. Yang, X. Jiang, Characteristics of electrorefractivemodulating based on graphene-oxide-silicon waveguide, Opt. Express 20 (2012) 22398–22405. [31] O.V. Kotov, Y.E. Lozovik, Dielectric response and novel electromagneticmodes in three-dimensional Dirac semimetal films, Phys.Rev. B 93 (2016) 235417. [32] T. Timusk, J.P. Carbotte, C.C. Homes, D.N. Basov, S.G. Sharapov, threedimensional Dirac fermions inquasicrystals as seen via optical conductivity, Phys. Rev. B 87 (23) (2013) 235121. [33] T. Timusk, J.P. Carbotte, C.C. Homes, D.N. Basov, S.G. Sharapov, threedimensional Dirac fermions inquasicrystals as seen via optical conductivity, Phys. Rev. B 87 (23) (2013) 235121. [34] Bai Sun, Xin Zhang, Guangdong Zhou, Pingyuan Li, Yong Zhang, Hongyan Wang, Yudong Xia, Yong Zhao, An organic nonvolatile resistive switching memory device fabricatedwith natural pectin from fruit peel, Org. Electron. 42 (2017) 181–186.
[35] L. Cai, H. Tabata, T. Kawai, Self-assembled DNA networks and their electrical conductivity, Appl. Phys. Lett. 77 (2000) 3105–3106. [36] Zhongyang Li, Yujie J. Ding, Terahertz broadband-stop filters, IEEE J. Sel. Top. Quantum Electron. 19 (1) (2013) 8500705. JANUARY/FEBRUARY. [37] K. Bolotin, K. Sikes, Z. Jiang, M. Klima, G. Fudenberg, J. Hone, P. Kim, H. Stormer, Ultrahigh electron mobility in suspended graphene, Solid State Commun. 146 (2008) 351–355. [38] Si Zhang, Yufei Wang, Shaohua Wang, Wanhua Zheng, Wavelength-tunable perfect absorber basedon guided-mode resonances, Appl. Opt. 12 (2016) 3176–3181. [39] U. Kreibig, M. Vollmer, Optical Properties of Metal Clusters, Springer, Berlin, 1995. [40] P.V. Tuong, J.W. Park, V.D. Lam, W.H. Jang, S.A. Nikitov, Y.P. Lee, Dielectric and Ohmic losses in perfectly absorbing metamaterials, Opt. Commun. 295 (2013) 17–20. [41] L A Falkovsky, Sergey S Pershoguba, Optical far-infrared properties of a graphene monolayer and multilayer, Phys. Rev. B, 15, 153410.
7