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Obtaining cubic boron nitride films by reactive sputtering
Classified
abstracts
819-83:!
according to the ~&me vapotrr-liqtlid-autoepitaxial film. I’crl’ect silicon autoepitaxial films are obtained at low temperature using this method. A V Popov et al, S/I NUI&,I Tr Prohl Mihroe/ekr,_ou. 4, Mmk Imi I+k/ro/r Tpkh. I Oh’). IO’, I I 2 (01 Rmsim7). 30 819. Deposition of autoepitaxial silicon films from molecular beams in high vacuum with controlled gas composition. (USSR) It is ahobn that the determining role in the preparation of perfect autoepitaxial silicon films is played by the process of thermal treatment of the substrate in vacuum. The thermal treatment of substrate and the vacuum conditions determine the perfection of the films to a higher degree than composition and pressure of ambient gases in the \\orkingchanlber during film deposition. \’ A Ushakor et al. Sb &M&II Tr Pro/d Mik,.~,c/c,k//,o,l. 4. Mo.vX 1/r\/ .E/ekt~/r Tckh. 1969, 192-200 (i/r R/r.\.\itr~). 30 X20. Heteroepitaxy of germanium from solution in melt. (USSR) The process of oriented growth of germanium from its solution in liquid lead on silicon substrate is investigated in vacuum at 4 ~ IO ” torr.
30 X21. Investigation of the mechanism of germanium heteroepitaxy on GaAs during growth from a molecular beam in vacuum. (USSR) Using the example of germanium films evaporated in vacuum at 10 : torr on GaAs substrates oriented along directions (I I I) and (100). the possibility of the growth mechanisms vapour-liquidepitaxial film and vapour-crystal was investigated and also the temperature limits of transition of one mechanism in the other and their influence on degree of perfection of crystal structure of heteroepitaxial films. It is shown that epitaxy takes place over a broad temperature range including temperatures above the initial GaAs dissociation temperature. Below the temperature of GaAs decomposition. the growth mechanism vapour-epitaxial filni takes place. Above this temperature epitaxy proceeds according to the scheme vapour(Ge)liquid(Ge Ga)-crystal (heteroepitaxial film). In the low temperature region below 700 C, some decrease in the density of packing defects is observed with tenlperature increase. The density of packing defects i\ not significantly different in the heteroepitaxial growth on the (I I I ) and ( TTi) planes of GaAs. In heteroepitaxial films obtained on \tlbstrate\ oriented in the (100) direction, packing defects were not observed.
.10 822. InHuence of the ambient on the photoroltaic properties of epitaxial films of cadmium telluride. (USSR) The influence of ambient gases on the photovoltalc properties ot epitaxial films of vacuum evaporated cadmium telluride is investigated. I’ T Novik
and G Reysse,
UC,/? Zrrp LG(/,
&r~ 354.
1’170, 41 46 (i!r
R/i.\ \icrn). 30 823. Investigation of high-voltage photovoltaic and piezoelectric effects in thin CdTe films and their dependence on film structure. (LISSR) The dcpcndence of the anomalous photovoltaic and piezoelectric ell‘ects in thin CdTc films on their structure is experimentally investigated. c’ B Tolutis and V V yasutis. Licr I-i’: Ri&i/~~,.r, IO (2). lY70, 271 277 (i/r R/M it//l). 30 824. On the nature of the photovoltaic effect in thin polycrystalline CdTe films. (USSR) Results ofexperimental investigation of the spectral distribution ofthe hi?&voltage nhotovoltaic effect in nolvcrystalline films of CdTc and CdTe Cdare presented. I I’ Bakutis and K K Valatska, Lie/ Fi’i; Rinki~~~~.v, IO, (2), 1970. 27Y X6 (if! R/~.v.v;cr/r). 30 825. Thin-film position-sensitive photoelements with p-Cu,O-n-CdS hcterojunction. (USSR) The longitudinal photoeffect in thin-film p-C‘uLO-n-C‘dS hctero362
Junction, prepared by vacuunl evaporation of C‘dS on Ihe oxidized surface of an evaporated Cu layer is investigated. Sh D Kurmashev. E/ektron Trkh Up Knchr.~t Storrdurl, 5, I Y70, 38 41 (it/ R/r.rsicrn). 30 826. Obtaining cubic boron nitride films by reactive sputtering. (USSR) Properties of boron nitride films on different substrates. prepared by reactive sputtering, are investigated. V N Gashtold et al, Elektron Tekh Upr Knchr.vt Stmrclrrrt, 4, I Y70, 5X 6X (in R/mim).
30 827. Some problems of theory and technique in the preparation of epitaxial layers. (USSR) Problems of epitaxial technology and mechanisms of epitaxial growth are considered. Different methods of preparation of epitaxial film\ are discussed. Yu D Chistyakov, Narrcht7 Tr Pro/d Mikrorlrktrou. 4. .Mod In.\/ E/rkt,o/r Tekh. 1969. W 60 (in R~/.wic//~) 30 828. Problem of mechanism in Si autoepitaxy with condensation from molecular beams in vacuum. (USSR) Possibility of obtaining defect-free autoepitaxial layers of silicon b> condensation from a molecular beam on previously thermally treated silicon substrates in vacuum. is investigated. It is shown that utiliration of a screen during thermal treatment of the substrate at pressures higher than IO-: torr and temperature above 1270 C promotes aubxcquent growth of perfect defect-free autoepitaxial films on the parts 01 surface which were screened during heating. Apparently, the presence of the screen results in the formation of a thin film of oxygen containing liquid phase in the sy5tcm Si-O-alloying additive in the substrate and subsequent growth of autoepitaxial films on these parts proceed\ according to the mechanism vapour-liquid-autoepitaxial silicon layer. It is demonstrated that thermal etch-pits are due to interaction 01 substrate material with oxygen and oxygen containing gases in the residual gas. A mechanism IS presented Mhich explains the difference in surface morphology with substrate screening during thermal treatment.
30 829. Investigation of condensate distribution of films from a large number of identical evaporators. (USSR) A method of calculation of film thickness from a large number 01 identical evaporators i\ presented. G A Chepakhin et al. TV Krr~tr A~,icuv Imtifr~r, 104, I Y70. HX 94 (i/l R/c.v.tic/,r). 30 : IS X30. Photoemission from thin aluminium films. (USSR) Optical transparency and spectral distribution of the photo-electric quantum yield of thin aluminium films in dependence on film IO ‘( thickness are investigated in sealed devices at pressure of I to 5 torr. A film thickness of 600 A, the maximum photoelectric quantum yield is reached for all wavelengths. The exit depth of photoelectrons was determined to be 650 A. The work function was measured to be 4.22 eV independent on the film thickness, The influence of vacuum conditions on photoemission characteristics is investigated. It I> found that the quantum yield is reduced at pressures above IO ’ torr. A Iv Arseneva-Geyl and G V Prudnikova, UC/~ ZL,I, LGU. h’o 354. 1970. 17 30 (if1 RII.\SiNl/). 30 : IH 831. Photoemission from thin barium films. ( USSR) Photoemission from barium films of different thickness ih Investlgaletl to determine the photoelectron exit depth. The barium films \rerc obtained by successive evaporation of barium on quartz substrate\. The dependence of the quantum yield on the film thickness with maximum at thickness of 75 ,& for all wavelengths is obtained. UTing the Fowler method. the work function of the barium films is determined and its dependence on film thickness is presented. The Mark function monotonically increases as the thickness decreases from 100 to 50 A. On the basis of the obtained results, the value of the photoelectron exit depth in barium is determined to he 60 A. V N Lvasnikov and A N Arseneva-Gevl. (/(,/I ZW LGL’. No 354, 1970. JO-33 iii? Russia). 30 832. Anomalous photovoltaic effect in ZnS thin films. (Germany) The wavelength dependence of the photovoltage for diRerent thin
abstracts
819-83:!
according to the ~&me vapotrr-liqtlid-autoepitaxial film. I’crl’ect silicon autoepitaxial films are obtained at low temperature using this method. A V Popov et al, S/I NUI&,I Tr Prohl Mihroe/ekr,_ou. 4, Mmk Imi I+k/ro/r Tpkh. I Oh’). IO’, I I 2 (01 Rmsim7). 30 819. Deposition of autoepitaxial silicon films from molecular beams in high vacuum with controlled gas composition. (USSR) It is ahobn that the determining role in the preparation of perfect autoepitaxial silicon films is played by the process of thermal treatment of the substrate in vacuum. The thermal treatment of substrate and the vacuum conditions determine the perfection of the films to a higher degree than composition and pressure of ambient gases in the \\orkingchanlber during film deposition. \’ A Ushakor et al. Sb &M&II Tr Pro/d Mik,.~,c/c,k//,o,l. 4. Mo.vX 1/r\/ .E/ekt~/r Tckh. 1969, 192-200 (i/r R/r.\.\itr~). 30 X20. Heteroepitaxy of germanium from solution in melt. (USSR) The process of oriented growth of germanium from its solution in liquid lead on silicon substrate is investigated in vacuum at 4 ~ IO ” torr.
30 X21. Investigation of the mechanism of germanium heteroepitaxy on GaAs during growth from a molecular beam in vacuum. (USSR) Using the example of germanium films evaporated in vacuum at 10 : torr on GaAs substrates oriented along directions (I I I) and (100). the possibility of the growth mechanisms vapour-liquidepitaxial film and vapour-crystal was investigated and also the temperature limits of transition of one mechanism in the other and their influence on degree of perfection of crystal structure of heteroepitaxial films. It is shown that epitaxy takes place over a broad temperature range including temperatures above the initial GaAs dissociation temperature. Below the temperature of GaAs decomposition. the growth mechanism vapour-epitaxial filni takes place. Above this temperature epitaxy proceeds according to the scheme vapour(Ge)liquid(Ge Ga)-crystal (heteroepitaxial film). In the low temperature region below 700 C, some decrease in the density of packing defects is observed with tenlperature increase. The density of packing defects i\ not significantly different in the heteroepitaxial growth on the (I I I ) and ( TTi) planes of GaAs. In heteroepitaxial films obtained on \tlbstrate\ oriented in the (100) direction, packing defects were not observed.
.10 822. InHuence of the ambient on the photoroltaic properties of epitaxial films of cadmium telluride. (USSR) The influence of ambient gases on the photovoltalc properties ot epitaxial films of vacuum evaporated cadmium telluride is investigated. I’ T Novik
and G Reysse,
UC,/? Zrrp LG(/,
&r~ 354.
1’170, 41 46 (i!r
R/i.\ \icrn). 30 823. Investigation of high-voltage photovoltaic and piezoelectric effects in thin CdTe films and their dependence on film structure. (LISSR) The dcpcndence of the anomalous photovoltaic and piezoelectric ell‘ects in thin CdTc films on their structure is experimentally investigated. c’ B Tolutis and V V yasutis. Licr I-i’: Ri&i/~~,.r, IO (2). lY70, 271 277 (i/r R/M it//l). 30 824. On the nature of the photovoltaic effect in thin polycrystalline CdTe films. (USSR) Results ofexperimental investigation of the spectral distribution ofthe hi?&voltage nhotovoltaic effect in nolvcrystalline films of CdTc and CdTe Cdare presented. I I’ Bakutis and K K Valatska, Lie/ Fi’i; Rinki~~~~.v, IO, (2), 1970. 27Y X6 (if! R/~.v.v;cr/r). 30 825. Thin-film position-sensitive photoelements with p-Cu,O-n-CdS hcterojunction. (USSR) The longitudinal photoeffect in thin-film p-C‘uLO-n-C‘dS hctero362
Junction, prepared by vacuunl evaporation of C‘dS on Ihe oxidized surface of an evaporated Cu layer is investigated. Sh D Kurmashev. E/ektron Trkh Up Knchr.~t Storrdurl, 5, I Y70, 38 41 (it/ R/r.rsicrn). 30 826. Obtaining cubic boron nitride films by reactive sputtering. (USSR) Properties of boron nitride films on different substrates. prepared by reactive sputtering, are investigated. V N Gashtold et al, Elektron Tekh Upr Knchr.vt Stmrclrrrt, 4, I Y70, 5X 6X (in R/mim).
30 827. Some problems of theory and technique in the preparation of epitaxial layers. (USSR) Problems of epitaxial technology and mechanisms of epitaxial growth are considered. Different methods of preparation of epitaxial film\ are discussed. Yu D Chistyakov, Narrcht7 Tr Pro/d Mikrorlrktrou. 4. .Mod In.\/ E/rkt,o/r Tekh. 1969. W 60 (in R~/.wic//~) 30 828. Problem of mechanism in Si autoepitaxy with condensation from molecular beams in vacuum. (USSR) Possibility of obtaining defect-free autoepitaxial layers of silicon b> condensation from a molecular beam on previously thermally treated silicon substrates in vacuum. is investigated. It is shown that utiliration of a screen during thermal treatment of the substrate at pressures higher than IO-: torr and temperature above 1270 C promotes aubxcquent growth of perfect defect-free autoepitaxial films on the parts 01 surface which were screened during heating. Apparently, the presence of the screen results in the formation of a thin film of oxygen containing liquid phase in the sy5tcm Si-O-alloying additive in the substrate and subsequent growth of autoepitaxial films on these parts proceed\ according to the mechanism vapour-liquid-autoepitaxial silicon layer. It is demonstrated that thermal etch-pits are due to interaction 01 substrate material with oxygen and oxygen containing gases in the residual gas. A mechanism IS presented Mhich explains the difference in surface morphology with substrate screening during thermal treatment.
30 829. Investigation of condensate distribution of films from a large number of identical evaporators. (USSR) A method of calculation of film thickness from a large number 01 identical evaporators i\ presented. G A Chepakhin et al. TV Krr~tr A~,icuv Imtifr~r, 104, I Y70. HX 94 (i/l R/c.v.tic/,r). 30 : IS X30. Photoemission from thin aluminium films. (USSR) Optical transparency and spectral distribution of the photo-electric quantum yield of thin aluminium films in dependence on film IO ‘( thickness are investigated in sealed devices at pressure of I to 5 torr. A film thickness of 600 A, the maximum photoelectric quantum yield is reached for all wavelengths. The exit depth of photoelectrons was determined to be 650 A. The work function was measured to be 4.22 eV independent on the film thickness, The influence of vacuum conditions on photoemission characteristics is investigated. It I> found that the quantum yield is reduced at pressures above IO ’ torr. A Iv Arseneva-Geyl and G V Prudnikova, UC/~ ZL,I, LGU. h’o 354. 1970. 17 30 (if1 RII.\SiNl/). 30 : IH 831. Photoemission from thin barium films. ( USSR) Photoemission from barium films of different thickness ih Investlgaletl to determine the photoelectron exit depth. The barium films \rerc obtained by successive evaporation of barium on quartz substrate\. The dependence of the quantum yield on the film thickness with maximum at thickness of 75 ,& for all wavelengths is obtained. UTing the Fowler method. the work function of the barium films is determined and its dependence on film thickness is presented. The Mark function monotonically increases as the thickness decreases from 100 to 50 A. On the basis of the obtained results, the value of the photoelectron exit depth in barium is determined to he 60 A. V N Lvasnikov and A N Arseneva-Gevl. (/(,/I ZW LGL’. No 354, 1970. JO-33 iii? Russia). 30 832. Anomalous photovoltaic effect in ZnS thin films. (Germany) The wavelength dependence of the photovoltage for diRerent thin