On the evaporation rate of silicon

All0 Surhicc Science 16N (1986) 52 Norlh-Holhtnd, Amsterdam

58

ON THE E V A P O R A T I O N R A T E OF SILICON J.1.. S O U C H I E R E

and VU

THIEN

BINH

l)dpartetnent de I~h.vsique de~ Mat&iau.~ (1..I ( ' N R S L I n tver~itd I.vopz 1. 69622 Villeurhamw, kT'am'{' Received I0 June 19£5: accepted lor publication 14 June lUN5

['~xperimental results on the evaporation rates ol silicon arc presented, l'he data arc t~bhtincd under well-controlled experimental conditions: ultrahigh \Hctltllll, electron bombardmcnt huH[ ing, in order to avoid non-desirable adsorption. The e~-ili~Ol'tlti+.)ll i'ilteS tile llle{iStllet] dirccll~ Item sample geometr) varialions. For ltk' lemperalurc range belween 15lill anti If~6tt K, lhc c~ 1()1 .t ~lllt] 1: Hie ,fl 2.{)S ~< IIIa K, illlt] 1. N 7£

Surlacc Science 16£ ('IUS01 5U t't7 Norlh-t tolland. Amslerdanl

C L E A N L I N E S S A N D P O L L U T I O N OF S i ( l l l ) A N D Si(100) S U R F A C E S S T U D I E D BY A E S J.-L. VI(}NES,

P. I ) E N J E A N ,

.1. L E H E R I ( ' Y

a n d ,l.-P, L A N G E R ( ) N

I . I. l:.S.s. I:., l:coh, Normah" Supdrlcurc Uc /'l:nveign
The direct Auger spectra 1: n(l:) el ~,ilicon have bccn studied tel (111) and (100) cl,,stab,. tile surtaces of which have been clcaned o+ contaminated with eithcr or both carbc, iI o r o x y g c l l . l'hc 111cil!.,ulcllleill of the peak to background ratio (t'/B) for thc Si I.VV lransition is a criterion el cteanlincss more sensilivc than the appearance el the peaks el the contaminating spccics (cspecially lor oxygen). Under a base prcssurc ot I × I(I i,, T o n , and cxposurc el a sampled area of 15Mm diamcler to an electron bcam of high intensity(3 keV, a fc~ A c m :). thc whole surface of a crystal can bc rapidly polluted with carbon and oxygcn. ()xygcn has :1 great cffccl on the l'/B ratio and the shape of the Si LVV peak. dcfinilely inert hnportanl than \~h:lt would be supposed from the ~eak intensity el the oxygen peak.