On the kinetics of Cu(I) transfer through the solid CuI-Cu interface

On the kinetics of Cu(I) transfer through the solid CuI-Cu interface

Materials Chemistry and Physics, 24 (1990) ON THE KINETICS J.C. OF Cu(1) TRANSFER THROUGH 473 THE SOLID INTERFACE CuI-Cu , M.R. Prat and J.A...

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Materials Chemistry and Physics, 24 (1990)

ON THE KINETICS

J.C.

OF Cu(1) TRANSFER

THROUGH

473

THE SOLID

INTERFACE

CuI-Cu

, M.R. Prat and J.A. Schmidt*

Baz&*

Dpto. de Quimica

e Inp. Quimica,

8000 Bahia Blanca Received

413-485

Universidad

National

de1 Sur

(Argentina)

July 31, 1989; accepted

September

13, 1989

ABSTRACT The Cu(1) transfer vanostatic

transient

through

the Cu/_d,(l),o(-CuI

technique.

for both the anodic and cathodic rate controlling to the CuI

according

theoretical

for the Cu/_b,p-CuI

side to the electrolyte

calculation

range

of the energy

by a gal-

energies

obtained

steps are postulated

as

: a) the ion incorporation

interface

surface

barrier

was studied

activation

two different

processes,

to the temperature

solid electrolyte

from the metallic

interface

From the experimental

in-

and b) the ion transfer

at the Cu/o(-CuI

interface.

for the ion transfer

A

is also pre-

sented.

INTRODUCTION The study of the electrodic of interest electrolytes

in energy

on the subject and metals

has been conducted

of Ag(1)

the present

conversion

[I]. The cationic

some attention, transfer

reactions

due to the increasing

but mainly through

on interfaces

devices.

study conducted

involving

solid oxygen interface

[2]. In

has already

cells is a matter

Cientificas

conductors has received

this laboratory

been studied

on the Cu/CuI electrode

de Investigaciones

solid

Most of the work done

conductor

ion conductors interface

systems

involving

conductor/electronic

for silver

*Research Fellows, Comision Aires (CIC) (Argentina). 0254-0584/90/$3.50

and gas sensing

the Ag/AgI

paper a similar

in solid state galvanic

use of electrochemical

the

/3]. In

is reported

de la Prov. de Buenos

0 Elsevier Sequoia/Printed

in The Netherlands

on.

474

EXPERIMENTAL CuI was synthesized The solid precipitate maintained diameter

by reaction

nitrogen

and about 0.3 cm thickness

Copper metal of 99.999%

were prepared

respectively.

The cell was placed

in a vertical

In order to assure

the solid-solid

tained on the working

Preliminary

electrode

experiments

to 460°C and was maintained

latively

glass furnace contact,

electrodes electrode.

nitrogen.

of 13 Kg/cm2 was main-

temperature. was obtained

an alternating

current

for about one hour. The working beta- and alpha-CuI

phases,

by previous of 1kHz fre-

temperature namely

covered

from 330°C

fl"C.

pulses

ranging

in time were applied.

low values,

at 2000 Kg/cm2.

and working

under purified

a pressure

that reproducibility

cell by passing

range of the gamma-,

Short galvanostatic

by pressing

of 1 cm

and the cell was heated at about 500°C during at

showed

quency and lo-20 mV amplitude

10 to 4Op.s

10 hours. Pellets

It was also used as reference

before going to the working

of the working

the stability

for about

purity was used for the counter

of 1 cm and 0.3 cm diameter

'activation'

quality.

was washed and dried at 120°C. After that the powder was

at 550°C under purified

least 30 minutes,

KI, both of proanalysi

of CuSO4 with

in order

from 2~10~~ to 8~10-~ A in current and from

The applied

to perturb

current

values were limited

the electrode

surface

to re-

as little as po-

sible. The measuring combined

circuitry

with a Datalab

was integrated

DL 902 transient

by a Mega Physics recorder

IM 400 galvanostat

and a Telequipment

storage

oscilloscope.

RESULTS Figure 1 shows a typical ohmic

resistance

those calculated

A linear

normally condition

values

portion

for linearizing

0.04 V. This upper lues employed

as shown

was obtained

dimensions

between

values

expression

used here, this condition

value of overpotential

(j) and the

resistances, exponential

as expressed equation.

is given by vF<
is met at potentials

corresponds

The At

under

with the higher current

temperatures

relationship

current

2 and 3. The slopes of

transfer

of a Butler-Volmer-type

that exponential

show an exponential

in Fig.4.

the applied

as charge

here. Only at the lower working

which

with

and the conductivity

('7). as shown in Figs

lines are interpreted

temperatures

From the initial jump the

The values were consistent

.

relationship

by the linear

the working

obtained,

[4]

overpotential

those straight

(2) response.

was obtained.

from the solid electrolyte

from the literature

stationary

overpotential

of the electrolyte

va-

are higher qvalues

with the galvanostatic

current,

475

T ft -

-

---

-----L-

1 bi

q.lsi

+

1

ImV

Fig. l.A typical

4

galvanostatic

8

transient

12

I8

response.

20

24

28

] [mA cm-*] Fig. 2.Plot of overpotential

(v) against

current

density

(j), anodjc

runs.

476

8

4

12

16

20

24

28

j [mA cm21 Fig. 3.Plot of overpotential

-

(2) against

current

density

(j). Cathodic

runs.

density

(j) at low temperature

Tt336.C

220

180

I40 T E -Km d 60

20 I 2

I

1 6

I

j

[mA

I IO

I

I I4

1

I I8

cW2]

Fig. 4.Plot of overpotential (q) against showing the exponential relationship.

current

477

Hence the apparent expression

exchange

current

densities

jo were calculated

from the

:

j = j. vF/RT

(I)

The obtained beta-CuI

values

varied

between

7~10~~ and 160~10-~

range and from 0.35 to 0.7 A/cm2

The j. data follow an Arrhenius-type in Figs.5

and 6 for the anodic

rent slopes

are observed

relationship

and cathodic

: one for the gamma-beta

zone of the beta-alpha-CuI

The data dispersion

is higher

in this case the electrode anodic

alpha-CuI

respectively.

CuI and another, plot coincides

as shown Two diffe-

lower than the with the tem-

perturbation

plots, which

is acceptable

should be higher than in the

runs.

02 1

.o

198 .o Z6 C

i 3.4 4.2 54

132

1.36 1.40 1.44 l&a

152

1s

180

lfi

[f.&-] Fig. 5.Arrhenius Anodic data.

phase.

transition.

for the cathodic

surface

for the gamma-

with temperature

processes,

first, for the alpha CuI. The knee of the Arrhenius perature

A/cm'

for the high temperature

plot of In exchange

current

density

(j,) against

I/T.

for

478

02.6 .: 3.4 4,2 5,o

1,32 1,36 1,40 1.44 l,? [ Fig. 6.Arrhenius Cathodic data.

assebled

Table

average

in Table

current

values of the apparent

average

Besides,

which

l/T.

energies

(E,) are

activation

energies

Phase gamma-beta

405-460

citance

(jo) against

activation

values of the apparent

Eai$G$ic 300-405

density

I.

I. Calculated

Tempetgure

p/q

plot of In exchange

The calculated

1.52 1,56 1,60 1..64

alpha

from the initial

was calculated.

172.4

28.0

42.7

slopes of the 9 -t transients

The obtained

is a figure considerabily

lid electrolyte

interfaces

Ea~Y:zJ

152.3

133.

the double

values were of the order of 10 -2

lower than the reported

layer capapF/cm2

values for other metal/so-

479

DISCUSS[ON The activation

energies

As assumed to involved

and the controlling

in other similar

the following

cases

[3, 53

by b) C&(I)

and the reverse

for the cathodic

assure

that different

obtained

reaction

is considered

: a) Cu(1) transfer

surface,

ion incorporation

From the different

, the reaction mechanism

two steps for the anodic

from the metal to the solid electrolyte

followed

steps

into the crystal

lattice,

direction.

values of the activation

steps control

the electrodic

energy,

reaction

it is easy to

at each temperature

range. For the lower temperatures,

CuI phases, the obtained ionic migration reasonable

are similar

inside the crystal,

of the gamma and beta

to the energies

which

to the movement

between

in the

II.

rate is controlled

step, for to do that, the Cu(I) ion must overcome

to that corresponding

involved

are shown in Table

to assume that in this case the reaction

corporation similar

process

in the range of stability

Ea values

It

an energy

equivalent

then

is

by the inbarrier

sites in the crys-

tal structure.

Table

11. Migration

Phase Temperat/; range

energies

vacancy and intersticials in solid CuI C4].

of copper

Migration

energy

for

Migration energy for copprJ;;;j-sticial

coPP;J;;;ncY

alpha-CuI (420-470)

18.37

beta-CuI

11.56

107.53

----..--

156.54

120.50

(390-400)

L

gala-CuI (325-350)

On the other hand, the activation densities

at higher

tion energy ticials

(Tables

predominates

ion transfer

temperatures

I and II),

energy

is somewhat assuming

with a migration

step could be assumed

obtained

from the exchange

that in this case the movement

energy

current

higher than the corresponding

(Em) of about

to be rate controlling.

migra-

via inters-

12.5 kJ/mol. Thus,

the

In Fig.7 an schematic drawing of the different energy barriers is presented. For the low temperature the addition

of the Ea for incorporation

corresponding justify

to Cu(1) in the metal

the higher

Em (o<-(3).

flects

energy

the ionic transfer

plus the difference

process

obtained

apparent

cui,,f)

an estimation ion transfer the double

of the energy barriers

calculation

Following

curve).

The diagram

the cathodic

higher stability

re-

and anodic for the

t

I

;

Theoretical

between

to the

of alpha-CuI,

lower (dotted

be rate controlling.

a relatively

This would

E, as compared

is considerably

difference

the energy

than in the crystal.

I

Fig. 7.Sketch tal inside.

obtained

between

is given by

interface,

in the range of stability

process would

is 16 f 8 kJ/mol making

ion in the metal

for the process

and at the electrolyte

inside the crystal

also the experimentally

Ea, which

energy

value of the experimentally

As for the electrode

the ion migration Therefore,

the activation

phases,

cJ(c”I)

for ion transfer

of the energy barrier

an approximate

approach

from metallic

layer thickness.

Cu(1) ion approaching

energy

for the Ag/AgI

against

distance

copper to the solid electrolyte To this end the separate

both surfaces

to the crys-

for the CutI) transfer

used earlier

was made of the potential

from the metal

interface

161,

curve for the Cu(1)

surface,

going through

curves of the interaction

at the Cu/alpha-CuI

interface

of

were calculated.

481

The potential with metallic

' = D x where

energy

copper was calculated

exp -[2*

j

(V) - distance

curve for the interaction

by means

of the Morse equation

(aj - a,)]- 2 exp -[&(aj

D is the dissociation

energy

between

(D= 33.03 kJ/mol),e(

distance

maximum

the three more probable

crystalline

used here (about lo-' A/cm2)

order of magnitude face, thus making

between

be only of coulombic that employed

into account

packed.

amounts

to a

that, at the current

the number of partaking

ions is about one

that only the next neighbours

or departing considered

for Madelung's

sur-

are going

ions.

are given elsewhere

a Cu(1) ion in the electrolyte

nature,

was

the (ill), (110)

and more densely

were taken, which

by taking

to consider

on the distances

The interaction

namely,

energy

lower than the number of atoms per sq.cm on the metallic it reasonable

to interact with the approaching More details

the interacting

[7]. The calculation

planes,

atoms the first and second neighbours

of 12 atoms. This is justified

densities

between

constant

the atoms at equilibrium.

and (loo), for these are the ones of lower surface As involved

:

a characteristic

The values of D and o( were taken from the literature made taking

ion

- a,)]

(in this case o( = 1.3588 i-l), aj the separation atoms and ae the distance

of a copper

[6].

surface was assumed

and was then calculated

using a method

constants

As most likely entrance

calculations.

analogous

to to or

exit plane, the (111) of the iodide ions was selected

following

[8]. The

iodide ions, in the plane

'gate' would

then be the space between

coulombically (copper

Thus, the approaching

with an assembly

ions) planes

placed

or departing

of alternate

at a constant

The total number of ions interacting ring the lattice

ions enclosed

the Cu(1) ion was always

Boyce and Hayes

ions. From that plane out the interaction

formed by the center of these was calculated.

three

ion was considered

negative

distance

(iodide

'seeing' a negative

to interact

ions) and positive

of 1.763 i from each other [9].

with the Cu(1) ion was varied

by half spheres

distance

of varying

radius.

by conside-

In such a way

charge of similar magnitude

to its

own. The calculated sidered

the reference around

energy

half spheres.

to the radius of the con-

a minimum

value of the different

value. The dispersion

is higher

curves

the greater

at about 1 i from also oscillates

the distance

to the

plane.

Figure 8 shows the curve obtained sing different comparison,

according

all of them go through

plane and the energy

an average

reference

curves are different

However,

numbers

of copper

the same minimum

for several

and iodide

distance

radii of the half sphere compri-

ions of the lattice.

is taken

For the sake of

for all the curves.

482 l 4

a

0

l 0

a

0

0 0

to 0

0

a0

me

.m

0 A

0

0

7.30

l

0

11.25 II.30

A

t1,50

0

53 740

a

1

2

3i [I

Distance

numbers of interacF&g. 8.Coulomb interaction curves for Cu ion 'seeing'different ting ions in the CuI crystal, according to the radius of the half spheres considered.

It is worthwhile charge

distributed

sidering

the interaction

among three iodide As a better which

to notice that these calculations in alternate

involves

the criterion neighbours

6 copper

metallic

positions.

to the half sphere of radius 5.3 i

as possible

This was selected

to that involving

on the

12 near

plane.

of the total potential

to fix both the separation

by con-

charge distributed

the minimum

ions and 7 iodide ions was chosen.

of having a circle as similar

double

show that the effect of the

the same as that obtained

placed on aproximately

curve the one corresponding

in the opposing

the electrical

is nearly

of the Cu(1) ion with one negative

ions trigonally

For the construction necessary

planes

distance

layer and the energy

energy against between

difference

distance

the minima between

curve it was

at both sides of

them.

483

-300 -300 7

-316

e -324 ._ Y \ -332 B g -340 w $j -340 5 -356 8 -364 -372 -300 -368 -396

Fig. 9.Calculated potential energy against distance curves for the Cu(1) transfer from metallic copper to the alpha-CuI interface. The Morse curves for the (loo), (110) and (111) planes are shown.

The double nes, which

layer thickness

are defined

is fixed by the position

as the location

of closest

On the CuI side it is given by the last crystalline side it is determined electrons

by the boundary

of the outer Helmholtz

approach

co-ions

plane, whereas

of the zone of positive

pla-

[lo). on the metal

charge where

the

move.

The minimum equilibrium

energy

position

ne of the metallic

on the metal on the metal

surface.

side is associated surface,

the centre

with the copper

ion in an

of the ion lying on the li-

484

it was taken as the average

As for the Cu(1) ion radius, and ionic radii,

1.28 and 0.96 i respectively

as above mentioned,

the minimum

Thus the total distance The energy

which

difference

tion of equation

was located

resulted

between

(2), which

should

can be estimated

for plane

of reac-

e t

0

AG>l

Cu;Surf)

-

is the standard potential,

744.37

(loo), 442.24

crystal

enrgy of sublimation,

kJ/mol

on the

eiM,

+

kJ/mol

1131;

for plane

corresponds

b4] ; and nG(Surf) on the surface

to thenGo

from the cycle

nG(Surf)

ionization

correspond

eid

AG(Sub)

wherenG(Sub)

side,

was 2.24 i.

the minima

I

“(M)

the metallic

at 1 i from the (111) iodide plane.

cu(s)

'

between

[11]. On the solid electrolyte

257.28

kJ/mol

is the work function,

4,

and 475.97

(110)

to the energy

difference

kJ/mol between

'gate' and the ion at an infinite

[12]; I is the 431.63

for plane

kJ/mol

(111)

the ion placed distance

from the

the crystal. The last term can be approximated the minimum

position

the above mentioned ThenGO especially

approximation.

value obtained

energy

Besides

Table

Comparison

curves

an ion at

according

0 to 18.8 kJ/mol depending

In Table III

the

ob-

ones. The agreement

[15] a value of

p=

0.4 was

factor of the electrode.

of the Ea values obtained

Crystalline

may be

made for the calculations.

experimentally

and by a theoretical

calculation Activation energy

to

was 552 kJ/mol.

value of 9.2 kJ/mol was

curve shown in Fig.9. with the experimental

from the slopes of the linearized for the symetry

III.

Thus an average

under the rather crude assumptions

calculated

between

long distance,

The value thus obtained

values.

values of E, are compared

seen as satisfactory,

difference

from the cycle varied between

on the work function

used to draw the potential tained

by the energy

and the ion at a sufficientely

plane

(100)

(110)

(111)

anodic

48.4

43.2

52.0

cathodic

38.8

33.6

42.4

new

Average

f

activation

kJ/mol]

Experimental values [kJ/moa

47.86

42.7 t 8

38.27

28.0 f. 8

CONCLUSIONS The experimental for the electrode the metallic ration further

results

are interpreted

reaction,

for the anodic

namely,

side up to the solid electrolyte

into the crystal postulated

and the converse

lattice,

interactions

yields

agreement

a theoretical

a two-step

direction,

surface,

direction.

obtained

energy

It is

higher than

involving

value for the activation

with the experimentally

from

by b) the incorpo-

at temperatures

A simple model

mechanism

a) ion transfer

followed

for the cathodic

that step a) is rate controlling

400°C and step b) for lower temperatures.

factory

by postulating

only coulombic barrier

in satis-

one for step a).

ACKNOWLEDGEMENTS This work was supported thanks

by grants

the UNS for a fellowship.

her contribution

from CIC and CONICET

The authors

to the theoretical

are indebted

of Argentina.

M.R.P.

to Dra. L. E. Fasano for

calculations.

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See for instance

2

H. Drstak and M.W. Breiter,

R.G. Linford

3 4

T. Matsui

5

S. Toshima,

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and S. Hackwood,

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(1981) 327.

Electrochim.

Acta, 33 (1988) 33 and references

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and N. Kimura,

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L.A. Girifalco

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J.B. Boyce and T.M. Hayes

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