On the orientational transition in commensurate mixed monolayers of nitrogen and noble gases adsorbed on graphite

On the orientational transition in commensurate mixed monolayers of nitrogen and noble gases adsorbed on graphite

A445 Surface Science 219 (1989) 429-436 North-Holland, Amsterdam 429 ON THE ORIENTATIONAL TRANSITION IN COMMENSURATE MIXED MONOLAYERS OF NITROGEN AN...

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A445 Surface Science 219 (1989) 429-436 North-Holland, Amsterdam

429

ON THE ORIENTATIONAL TRANSITION IN COMMENSURATE MIXED MONOLAYERS OF NITROGEN AND NOBLE GASES ADSORBED ON GRAPHITE K. KARYKOWSKI, Institute of Chemistry, Received

17 March

A. PATRYKIEJEW

MCS

and S. SOKOLOWSKI

University, 20031 Lublin, Poland

1988; accepted

for publication

13 April

1989

The effects of additions of rare gas atoms on the orientational transition in commensurate nitrogen films on graphite are considered. Calculations of the films properties are performed within the framework of the theoretical model presented in our earlier work [L. Lajtar, A. Patrykiejew and S. Sokdowski, Surface Sci. 200 (1988) 2871. It is demonstrated that the temperature of orientational ordering decreases rapidly with the increase in the concentration of atomic components as observed experimentally. On the other hand, it is shown that (in the present form) the mode1 has a serious drawback, predicting the same temperature of orientational ordering for films containing any of the rare gas atoms.

Surface Science 219 (1989) 437-444 North-Holland, Amsterdam

437

THEORETICAL ANALYSIS OF WORK FUNCTION DURING GROWTH OF THIN EPITAXIAL FILMS Yu.0.

KANTER

Institute of Semiconductor Received

OSCILLATIONS

20 January

Physics, Novosibirsk

1989; accepted

90, USSR

for publication

17 April

1989

A theory is developed for the time variation of the work function during the growth of thin epitaxial films. The theory of polylayer growth of crystals and thin films and the Helmholtz equation are used to obtain expressions for the dependence of the work function change A+ on time t in the case of homoepitaxial growth of metallic films. The oscillation of A+ during the growth of a single monolayer is analyzed in detail. It is estimated that the maximum value of A+ may reach l-100 meV depending on growth conditions.

445

Surface Science 219 (1989) 445-452 North-Holland, Amsterdam

ROLE OF STICKING ON A SURFACE M.A. KHAN

COEFFICIENTS

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Znstitut de Physique et Chimie des Mat&iaux de Strasbourg, 4 rue BIaise Pascal, 67070 Strasbourg Cedex, France

and

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Universit& Louis Pasteur,