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On the oxidation of III–V compound semiconductors
A133 Surface Science 168 (1986) 571-576 North-Holland, Amsterdam
CHARACTERIZATION OF EPITAXIAL ZnS FILMS FABRICATED BY SPUTFERING IN CONTROLLED HzS V A P O R Yoichi KAWAKAMI,
Tsunemasa TAGUCHI
and Akio HIRAKI
Faculty of Engineering, Osaka University, Suita, Osaka 565, Japan Received 10 June 1985; accepted for publication 6 September 1985 ZnS films doped with Mn (ZnS:Mn) were deposited on a variety of substrates by RF sputtering in controlled hydrogen sulfide vapor. In order to evaluate the interface characteristics of the grown layer, the effects of substrate orientation on the Mn 2+ photoluminescence band appearing in homoepitaxially grown ZnS:Mn films were investigated. The crystallinity of the films was also assessed by 2 MeV transmission electron microscopy. It is tentatively suggested that the incorporation of hydrogen sulfide gas can improve the crystallinity and interface properties of the epitaxial films.
Surface Science 168 (1986) 577-593 North-Holland. Amsterdam
ON THE OXIDATION OF l i l - V COMPOUND SEMICONDUCTORS Winfried MONCH
Laboratoriurn fiir FestkOrperphysik, Universitiit Duisburg, Fed. Rep. of Germany Received 10 June 1985; accepted for publication 14 June 1985
The main uptake of oxygen on cleaved (110) surfaces of GaAs at room temperature is known to proceed by two successive mechanisms, Tt and T 2. In the present paper, they are attributed to activated adsorption and field-aided growth of the oxide film (Cabrera-Mott mechanism). This model explains the data from Auger electron spectroscopy and from soft X-ray photoemission spectroscopy. Since identical shapes of the uptake-versus-exposure curves are observed with (110) surfaces of GaAs, InAs and lnP these two mechanisms are proposed to be effective with all III-V compound semiconductors. The photon stimulation of the oxygen uptake at these surfaces may also be understood on the basis of these two mechanisms. Furthermore, the model of activated adsorption also gives a plausible explanation for the observed increase of the threshold exposure for the main oxygen uptake on GaAs, InAs and lnP (110) surfaces, in that order.
CHARACTERIZATION OF EPITAXIAL ZnS FILMS FABRICATED BY SPUTFERING IN CONTROLLED HzS V A P O R Yoichi KAWAKAMI,
Tsunemasa TAGUCHI
and Akio HIRAKI
Faculty of Engineering, Osaka University, Suita, Osaka 565, Japan Received 10 June 1985; accepted for publication 6 September 1985 ZnS films doped with Mn (ZnS:Mn) were deposited on a variety of substrates by RF sputtering in controlled hydrogen sulfide vapor. In order to evaluate the interface characteristics of the grown layer, the effects of substrate orientation on the Mn 2+ photoluminescence band appearing in homoepitaxially grown ZnS:Mn films were investigated. The crystallinity of the films was also assessed by 2 MeV transmission electron microscopy. It is tentatively suggested that the incorporation of hydrogen sulfide gas can improve the crystallinity and interface properties of the epitaxial films.
Surface Science 168 (1986) 577-593 North-Holland. Amsterdam
ON THE OXIDATION OF l i l - V COMPOUND SEMICONDUCTORS Winfried MONCH
Laboratoriurn fiir FestkOrperphysik, Universitiit Duisburg, Fed. Rep. of Germany Received 10 June 1985; accepted for publication 14 June 1985
The main uptake of oxygen on cleaved (110) surfaces of GaAs at room temperature is known to proceed by two successive mechanisms, Tt and T 2. In the present paper, they are attributed to activated adsorption and field-aided growth of the oxide film (Cabrera-Mott mechanism). This model explains the data from Auger electron spectroscopy and from soft X-ray photoemission spectroscopy. Since identical shapes of the uptake-versus-exposure curves are observed with (110) surfaces of GaAs, InAs and lnP these two mechanisms are proposed to be effective with all III-V compound semiconductors. The photon stimulation of the oxygen uptake at these surfaces may also be understood on the basis of these two mechanisms. Furthermore, the model of activated adsorption also gives a plausible explanation for the observed increase of the threshold exposure for the main oxygen uptake on GaAs, InAs and lnP (110) surfaces, in that order.