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Optical MTF evaluation techniques for microelectronic printers
World Abstracts on Microelectronics and Reliability
553
4. MICROELECTRONICS--GENERAL A bibliography on electron beam induced current analysis of semiconductor devices. K. O. LEEDY. Solid St. Technol. p. 45 (February 1977). A bibliography has been compiled on the applications of the scanning electron microscope used in the electron-beam-induced-current mode in the analysis of semiconductor devices. Covering the period from December 1, 1963 when the first articles appear describing an application of EBiC through March 1976, the literature survey included a search of the abstracts appearing in Electrical and Electronics Abstracts, Physics Abstracts and the Engineering Index.
Microprocessor development eqtfipment. CAROLINE WEINS~IN. Electronics Power, p. 291 (April 1977). The biggest investment that any microprocessor user is going to make in his development project is his prototyping/development equipment. It could also be an expensive mistake. Even once the microp~rocessor is selected, the engineer is not off the hook. Which of the manufacturer's developmentsystem configurations should he use? Is it worth the extra to buy a disc peripheral? These questions cannot be answered simply, but this article puts some arguments forward and gives some examples of the types of equipment available.
5. MICROELECTRONICS DESIGN AND CONSTRUCTION Problems and solutions in the preparation of SOS wafers. J. E. A. MAURITS. Solid St. Technol. p. 81 (April 1977). The growth and fabrication of sapphire substrates is very similar to the process used for silicon wafers. Geometric dimensions fo|low standard silicon specifications as closely as possible, allowing the use of common handling and processing equipment. Differences in dimensions reflect the differences in physical properties..Boule evaluation techniques are primarily optical methods and quality requirements reflect different defect mechanisms. Substrate fabrication problems contributing to high leakage currents, unstable resistivity values, low breakdown voltages, excessive breakage and poor yields of SOS devices have been identified and solved. Materials advances continue as studies on orientation, pre-epitaxial surface treatments, and epitaxial growth conditions are coordinated with device properties and yields. Optical MTF evaluation techniques for microdectronic printers. M. C. KING and M. R. GOLDRICK.Solid St. Technol. p. 37 (February 1977). A universally applicable technique to evaluate exposure tool performance which does not depend on the photoresist properties is described. We choose to measure the modulation transfer function (MTF) of the exposure tools for two reasons: First, it describes the aerial image quality instead of the image recorded in the resist. Second, it is a fundamental optical characteristic of an imaging device. Once the MTF is determined, accurate predictions can be made regarding resolution, line spread functions, linewidth control, sensitivity to exposure variations, etc. This paper describes the measurement techniques. Experimental results are given for some representative contact, proximity and projection printers. Contour maps reveal non-uniformity in semiconductor processlng. D. S. PERLO~, F. E. WArm and J. D. REIMER.Solid St. Technol. p. 31 (February 1977). Iso-sheet resistance and iso-thickness contour maps are presented which reveal distinctive patterns of non-uniformity in some of the standard processes used for fabricating devices in silicon wafers. Rapid data acquisition, analysis, and display techniques make it possible to employ wafer mapping not only for process development and research but for control purposes as well. An example is given of process control data obtained over a period of six months for 3 in. diameter ion-implanted silicon wafers.
which simplifies the conversion of sheet resistance to impurity profile as required by the anodization and stripping technique. Error magnification commonly found in discrete data differentiation is avoided. Empirical mobility vs carrier concentration expressions are derived from several sources, and a self-contained computer algorithm is given which allows for data reduction on commonly available minicomputers using Fortran. The experimenter is provided with a check on the accuracy of the profile information.
Photoresist scumming. Part 1. The nature of negative photoresist scumming. DR. BURKE LF.ON. Solid St. Technol. p. 71 (April 19771 A detailed investigation of chemically induced negative photoresist scumming has been made, and airborne agents have been found which can reproducibly cause this phenomenon. Nitrogen dioxide is a very vigorous inducer of photoresist scum. This study encompasses the nature and properties of this scum, the effect of processing delays, of pre-bake temperature, of exposure energy, of propane gas concentration, of nitrogen dioxide gas concentration and of resist film thickness upon negative resist scumming. An X-ray fluorescence technique for the rapid determination of phosphorous in PSG film. CARLO GRILLETTO. Solid St. Technol. p. 27 (February 1977). A rapid and non-destructive product control approach has been developed for the routine analysis of phosphorus content in CVD-phosphorus glass layers. The analysis is accomplished by X-ray spectrometry and is capable of analyzing more than ninety samples an hour by production personnel. AMIS: a sharp eye on integrated-circuit masks. TRACY S. KINSEL.Bell Laboratories Record p. 37 (February 1977). Computerized inspection of circuit-pattern masks is helping to make integrated circuits that pass manufacturing inspection with flying colors--and hold down the cost of components for telephone equipment.
Micro-APP. a building block for low-cost high-speed associative parallel processing. R. M. LEA. Radio electron. Engr 47, (3) 91. A design technique, which allows the data-storage and the word-control functions of a byte-organized variable record-length Associative Parallel' Processor (APP), to be integrated on a single l.s.i, chip is discussed, and a new 1.s.i. device, called the Micro-APP, is proposed. Two implementations of the Micro-APP (16 words x 16 A computer algorithm for accurate and repeatable profile bits and 32 words x 12 bits) are described and their analysis ,~in~. anodizafion and stripping of silicon. JOSEPH characteristics compared with a similar APP in which all C. PLUNKETTand JACK L. STONE. Solid-St. Electron. 20, functions are implemented separately. Improvements of 447 (1977). The increased need for accurate and repeatable 16~0 and 112% in bit-per-pin ratio and reductions of 96% impurity profiling of shallow junction devices places strin- and 94% in cost-per-word-row are reported..Minimum gent requirements on the profiling procedures and sub- times for a search/write cycle (with tag resolution) of 190 ns sequent data reduction. A computer algorithm is described and 220 ns are also recorded..
553
4. MICROELECTRONICS--GENERAL A bibliography on electron beam induced current analysis of semiconductor devices. K. O. LEEDY. Solid St. Technol. p. 45 (February 1977). A bibliography has been compiled on the applications of the scanning electron microscope used in the electron-beam-induced-current mode in the analysis of semiconductor devices. Covering the period from December 1, 1963 when the first articles appear describing an application of EBiC through March 1976, the literature survey included a search of the abstracts appearing in Electrical and Electronics Abstracts, Physics Abstracts and the Engineering Index.
Microprocessor development eqtfipment. CAROLINE WEINS~IN. Electronics Power, p. 291 (April 1977). The biggest investment that any microprocessor user is going to make in his development project is his prototyping/development equipment. It could also be an expensive mistake. Even once the microp~rocessor is selected, the engineer is not off the hook. Which of the manufacturer's developmentsystem configurations should he use? Is it worth the extra to buy a disc peripheral? These questions cannot be answered simply, but this article puts some arguments forward and gives some examples of the types of equipment available.
5. MICROELECTRONICS DESIGN AND CONSTRUCTION Problems and solutions in the preparation of SOS wafers. J. E. A. MAURITS. Solid St. Technol. p. 81 (April 1977). The growth and fabrication of sapphire substrates is very similar to the process used for silicon wafers. Geometric dimensions fo|low standard silicon specifications as closely as possible, allowing the use of common handling and processing equipment. Differences in dimensions reflect the differences in physical properties..Boule evaluation techniques are primarily optical methods and quality requirements reflect different defect mechanisms. Substrate fabrication problems contributing to high leakage currents, unstable resistivity values, low breakdown voltages, excessive breakage and poor yields of SOS devices have been identified and solved. Materials advances continue as studies on orientation, pre-epitaxial surface treatments, and epitaxial growth conditions are coordinated with device properties and yields. Optical MTF evaluation techniques for microdectronic printers. M. C. KING and M. R. GOLDRICK.Solid St. Technol. p. 37 (February 1977). A universally applicable technique to evaluate exposure tool performance which does not depend on the photoresist properties is described. We choose to measure the modulation transfer function (MTF) of the exposure tools for two reasons: First, it describes the aerial image quality instead of the image recorded in the resist. Second, it is a fundamental optical characteristic of an imaging device. Once the MTF is determined, accurate predictions can be made regarding resolution, line spread functions, linewidth control, sensitivity to exposure variations, etc. This paper describes the measurement techniques. Experimental results are given for some representative contact, proximity and projection printers. Contour maps reveal non-uniformity in semiconductor processlng. D. S. PERLO~, F. E. WArm and J. D. REIMER.Solid St. Technol. p. 31 (February 1977). Iso-sheet resistance and iso-thickness contour maps are presented which reveal distinctive patterns of non-uniformity in some of the standard processes used for fabricating devices in silicon wafers. Rapid data acquisition, analysis, and display techniques make it possible to employ wafer mapping not only for process development and research but for control purposes as well. An example is given of process control data obtained over a period of six months for 3 in. diameter ion-implanted silicon wafers.
which simplifies the conversion of sheet resistance to impurity profile as required by the anodization and stripping technique. Error magnification commonly found in discrete data differentiation is avoided. Empirical mobility vs carrier concentration expressions are derived from several sources, and a self-contained computer algorithm is given which allows for data reduction on commonly available minicomputers using Fortran. The experimenter is provided with a check on the accuracy of the profile information.
Photoresist scumming. Part 1. The nature of negative photoresist scumming. DR. BURKE LF.ON. Solid St. Technol. p. 71 (April 19771 A detailed investigation of chemically induced negative photoresist scumming has been made, and airborne agents have been found which can reproducibly cause this phenomenon. Nitrogen dioxide is a very vigorous inducer of photoresist scum. This study encompasses the nature and properties of this scum, the effect of processing delays, of pre-bake temperature, of exposure energy, of propane gas concentration, of nitrogen dioxide gas concentration and of resist film thickness upon negative resist scumming. An X-ray fluorescence technique for the rapid determination of phosphorous in PSG film. CARLO GRILLETTO. Solid St. Technol. p. 27 (February 1977). A rapid and non-destructive product control approach has been developed for the routine analysis of phosphorus content in CVD-phosphorus glass layers. The analysis is accomplished by X-ray spectrometry and is capable of analyzing more than ninety samples an hour by production personnel. AMIS: a sharp eye on integrated-circuit masks. TRACY S. KINSEL.Bell Laboratories Record p. 37 (February 1977). Computerized inspection of circuit-pattern masks is helping to make integrated circuits that pass manufacturing inspection with flying colors--and hold down the cost of components for telephone equipment.
Micro-APP. a building block for low-cost high-speed associative parallel processing. R. M. LEA. Radio electron. Engr 47, (3) 91. A design technique, which allows the data-storage and the word-control functions of a byte-organized variable record-length Associative Parallel' Processor (APP), to be integrated on a single l.s.i, chip is discussed, and a new 1.s.i. device, called the Micro-APP, is proposed. Two implementations of the Micro-APP (16 words x 16 A computer algorithm for accurate and repeatable profile bits and 32 words x 12 bits) are described and their analysis ,~in~. anodizafion and stripping of silicon. JOSEPH characteristics compared with a similar APP in which all C. PLUNKETTand JACK L. STONE. Solid-St. Electron. 20, functions are implemented separately. Improvements of 447 (1977). The increased need for accurate and repeatable 16~0 and 112% in bit-per-pin ratio and reductions of 96% impurity profiling of shallow junction devices places strin- and 94% in cost-per-word-row are reported..Minimum gent requirements on the profiling procedures and sub- times for a search/write cycle (with tag resolution) of 190 ns sequent data reduction. A computer algorithm is described and 220 ns are also recorded..