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Orientation dependence of the evaporation rate of CdS single crystals
Classified abstracts 286--296 30 : 41 : 33 286. Amorphous oxide layers on gold and nickel films observed by electron microscopy. (USA) The vapour deposited films (100 to 400/~ thick) were supported on copper grids and could be annealed inside the electron microscope. Changes in microstructures were observed at temperatures up to 700°C. The formation of thin amorphous membranes suppotting discontinuous islands in the originally continuous films is attributed to oxide formation. M L Gimph, JApplPhys, 35 (12), 1964, 3572-3575. 30:19 287. Measurement of the thickness of thin films by optical means, from Rayleigh and Drude to Laugmuir, and the development of the present ellipsometer. (USA) A historical review, with special reference to the interferometric method and the development of the ellipsometer in 1944. A Rothen, Misc Publ Nat Bur Stand, 256, 1964, 7-21. 30 : 19 : 64 288. Ellipsometry in the measurement of surfaces and thin films symposium. (USA) The symposium was held in the National Buro of Standards, Washington, D C on 5-6 Sept 1963.
19 of the papers presented appear in Misc Publ Nat Bur Stand, 256, 1964, 359. 30 : 33 289. Orientation dependence of the evaporation rate of CdS single crystals. (USA) Vacuum evaporation characteristics of (0001), (1120) and (1020) crystal faces of CdS single crystals were measured over the temperature range 680-760°C. Whilst (1010) crystal face is unstable under vacuum conditions, surface areas of (0001) and (1120) faces do not change throughout evaporation. (USA) C A Somorjai and N R Stemple, J Appl Phys, 35 (11), 1964,
3398-3400.
32. Nucleonics 32 Method of adjusting the pressure of deuterium in a gas filled neutron generator. See abstract number 234. 32 Vacuum system for the Mura 50 MeV electron accelerator. See abstract number 260.
33. General physics and electronics 33 The effect of electric field on absorbed layers of caesium on various refractory materials. See abstract number 213. 33 Oxygen adsorption on zinc oxide. See abstract number 214. 33 The effect of chemisorption on collective metal properties. See abstract number 225. 33 Measurement of the physical adsorption of vapours and the chemisorption of oxygen on silicon by the method of ellipsometry. See abstract number 246. 33 Effect of temperature on mass spectra. See abstract number 262. 33 Investigation of the BiO system by electron diffraction. See abstract number 271. 33 Dispersion and anisotropy in normal single axis films. See abstract number 272. 33 Thickness measurement and electrical conductivity of evaporated metallic films. See abstract number 276. 33 On the properties of thin permalloy films obtained by cathodic sputtering. See abstract number 277. 33 Studies of monolayers of lead and tin on Si (111) surface. See abstract number 278.
164
33 The thermal arrangement of field evaporated iridium surfaces. See abstract number 280. 33 Electron microscope study of vacuum deposited copper. See abstract number 282. 33 The role of the molecular composition of the current of alloying elements in the preparation of silicon and germanium layers in vacuum. See abstract number 284. 33 Amorphous oxide layers on gold and nickel films observed by electron microscopy. See abstract number 286. 33 Orientation depends on the evaporation rate of CdS single crystals. See abstract number 289. 33 Radiation damage in body-centred metals. See abstract number 299. 33 290. Mechanism of electrical conduction in thin insulating films.
( USA ) An analysis of the tempelature dependence of the current passed by a BeO film lead the author to suggest that tunnelling is responsible. J Cohen, JApplPhys, 35 (10), 1964, 3056-3057. 33 291. Mechanism of electrical conduction in thin insulating films.
(USA) The conclusions reached in the previous abstract are questioned and conduction is regarded as being due to Schottky emission rather than tunnelling. L A Harris, J Appl Phys, 35 (10), 1964, 3057. 33 : 41 292. Electrical conduction of thin aggregated metal films. (Great
Britain) The resistance of thin films of gold deposited on glass depends on the bias voltage applied to an electrode on the rear face of the substrate, The author suggests that conduction occurs by electron tunnelling through the glass which contains a number of trapping sites between the conduction and valence bands. R M Hill, Nature, 204, 3 Oct 1964, 35. 33 293. The effect of polarization, field stress and gas impact on the topography of field evaporated surfaces. (Netherlands) Field evaporation end form is reached by a balance between the local field at the evaporation site and the binding energy of the metal atom undergoing evaporation. Polarization acts as a stabilizer and highly perfect surfaces can result if pure metals are used. Field stress may however produce lattice defects and the evaporation end form can be further modified by the transfer of dipole attraction energy of molecules colliding with surface atoms. E W Muller, Surface Sci, 2, 1964, 484-494. 33:18 294. Electrical conduction in very thin polybutadiene films formed in a glow discharge. (USA) The establishment of space charge limited current at field strength great enough for field emission (3 to 5 × 10 ~ V c m - l ÷ suggest tunnelling through the electrode-insulator interface as a conduction mechanism. (USA) N M Bashare and C T Doty, J Appl Phys, 35 (12), 1964, 3498-3507. 33 295. Transmission electron microscopy of sodium chloride films prepared by electron beam flashing technique. (Japan) With the help of a new method of electron beam flashing, mechanically introduced as well as grown-in dislocations in NaCI containing 0.00 to 2.3 mole per cent CaCI2 could be studied by transmission electron microscopy. Dislocation vectors are rendered visible by change in contrast when the crystal is set at different angles of Bragg reflection. K Yagi and C Honjo, JPhys Soc Jap, 19 (10), 1964, 1892-1905. 33 : 41 296. Magnetic fine structure and magnetic properties of uniaxial ferro magnetic films. (Germany) The differential, reversible and irreversible susceptibilities of the film are calculated from the equation of the magnetization ripple.
19 of the papers presented appear in Misc Publ Nat Bur Stand, 256, 1964, 359. 30 : 33 289. Orientation dependence of the evaporation rate of CdS single crystals. (USA) Vacuum evaporation characteristics of (0001), (1120) and (1020) crystal faces of CdS single crystals were measured over the temperature range 680-760°C. Whilst (1010) crystal face is unstable under vacuum conditions, surface areas of (0001) and (1120) faces do not change throughout evaporation. (USA) C A Somorjai and N R Stemple, J Appl Phys, 35 (11), 1964,
3398-3400.
32. Nucleonics 32 Method of adjusting the pressure of deuterium in a gas filled neutron generator. See abstract number 234. 32 Vacuum system for the Mura 50 MeV electron accelerator. See abstract number 260.
33. General physics and electronics 33 The effect of electric field on absorbed layers of caesium on various refractory materials. See abstract number 213. 33 Oxygen adsorption on zinc oxide. See abstract number 214. 33 The effect of chemisorption on collective metal properties. See abstract number 225. 33 Measurement of the physical adsorption of vapours and the chemisorption of oxygen on silicon by the method of ellipsometry. See abstract number 246. 33 Effect of temperature on mass spectra. See abstract number 262. 33 Investigation of the BiO system by electron diffraction. See abstract number 271. 33 Dispersion and anisotropy in normal single axis films. See abstract number 272. 33 Thickness measurement and electrical conductivity of evaporated metallic films. See abstract number 276. 33 On the properties of thin permalloy films obtained by cathodic sputtering. See abstract number 277. 33 Studies of monolayers of lead and tin on Si (111) surface. See abstract number 278.
164
33 The thermal arrangement of field evaporated iridium surfaces. See abstract number 280. 33 Electron microscope study of vacuum deposited copper. See abstract number 282. 33 The role of the molecular composition of the current of alloying elements in the preparation of silicon and germanium layers in vacuum. See abstract number 284. 33 Amorphous oxide layers on gold and nickel films observed by electron microscopy. See abstract number 286. 33 Orientation depends on the evaporation rate of CdS single crystals. See abstract number 289. 33 Radiation damage in body-centred metals. See abstract number 299. 33 290. Mechanism of electrical conduction in thin insulating films.
( USA ) An analysis of the tempelature dependence of the current passed by a BeO film lead the author to suggest that tunnelling is responsible. J Cohen, JApplPhys, 35 (10), 1964, 3056-3057. 33 291. Mechanism of electrical conduction in thin insulating films.
(USA) The conclusions reached in the previous abstract are questioned and conduction is regarded as being due to Schottky emission rather than tunnelling. L A Harris, J Appl Phys, 35 (10), 1964, 3057. 33 : 41 292. Electrical conduction of thin aggregated metal films. (Great
Britain) The resistance of thin films of gold deposited on glass depends on the bias voltage applied to an electrode on the rear face of the substrate, The author suggests that conduction occurs by electron tunnelling through the glass which contains a number of trapping sites between the conduction and valence bands. R M Hill, Nature, 204, 3 Oct 1964, 35. 33 293. The effect of polarization, field stress and gas impact on the topography of field evaporated surfaces. (Netherlands) Field evaporation end form is reached by a balance between the local field at the evaporation site and the binding energy of the metal atom undergoing evaporation. Polarization acts as a stabilizer and highly perfect surfaces can result if pure metals are used. Field stress may however produce lattice defects and the evaporation end form can be further modified by the transfer of dipole attraction energy of molecules colliding with surface atoms. E W Muller, Surface Sci, 2, 1964, 484-494. 33:18 294. Electrical conduction in very thin polybutadiene films formed in a glow discharge. (USA) The establishment of space charge limited current at field strength great enough for field emission (3 to 5 × 10 ~ V c m - l ÷ suggest tunnelling through the electrode-insulator interface as a conduction mechanism. (USA) N M Bashare and C T Doty, J Appl Phys, 35 (12), 1964, 3498-3507. 33 295. Transmission electron microscopy of sodium chloride films prepared by electron beam flashing technique. (Japan) With the help of a new method of electron beam flashing, mechanically introduced as well as grown-in dislocations in NaCI containing 0.00 to 2.3 mole per cent CaCI2 could be studied by transmission electron microscopy. Dislocation vectors are rendered visible by change in contrast when the crystal is set at different angles of Bragg reflection. K Yagi and C Honjo, JPhys Soc Jap, 19 (10), 1964, 1892-1905. 33 : 41 296. Magnetic fine structure and magnetic properties of uniaxial ferro magnetic films. (Germany) The differential, reversible and irreversible susceptibilities of the film are calculated from the equation of the magnetization ripple.