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Phase composition of vacuum condensates of cobalt
Classified abstracts 148--160 high cost of installation and the relatively small charge that can be dealt with at one time. (France) J Driole, Le Vide, 19 (112), July/Aug 1964, 219-223.
III. Vacuum applications
turn affect both the coercive force and the anisotropic field of the final product. (USA) J S Lemke, 1963 Proceedings of the lnterinag Conference (New York--Institute of Electrcial and Electronics Engineers). 30 : 41 155. On the observation of a new phenomenon in the growth of silver vapour films. (Germany) The growth of crystallites in an evaporated silver film was studied by means of an electron microscope. The evanescence of large crystallites seems to check the further growth of the smaller variety.
(Germany)
30. Evaporation and sputtering
K J l-lanszen, Z Naturforsch, 19a (6), 820-821.
30:41
148. Unsupported single crystal films of germanium. (USA) Monocrystalline oriented (100) films of germanium are obtained by sublimation of an NaCI substrate in vacuo. (USA) C W Skaggs and J R Jones, J Appl Phys, 35 (10), Oct 1964,
3013-3014.
30 : 52 149. Possible causes for the decrease of the lattice constant in thin films. (USA) Experiments with Ag, AI, Pb and Bi films lead the author to conclude that changes in the lattice structure are due to surface tension compressing crystallites in the film. (USSR) Y F Komnlk, Soy Phys Solid State, 6 (2), Aug 1964, 479-483. Translated from Russian original Fiz Tverdogo Tela, 6 (2), Feb
1964, 611-618.
30 : 56 150. The use of low frequency capacitance to measure the thickness of natural oxide layers of aluminium. (Great Britain) The author points out that in the presence of a transition layer (insulator-metal) low frequency capacitance measurement at a single frequency will nearly always overestimate the true insulation thickness. (Great Britain) P J Holmes, Solid State Electronics, 7, Aug 1964, 633-635. 30 : 41 : 52 151. Vapour deposition at low supersaturatlons. (USA) From an experimental study of the vapour deposition of zinc on Pyrex glass the author concludes that heterogeneous nucleation will proceed more rapidly by impingement of unstable embryos than by single atom addition under steady state conditions. (USA) S J Hruska, Acta Metallurgica, 12 (I), Nov 1964, 1211-1214. 30 : 41 152. Evaporation techniques and the study of thin films: application to antimony. (France) Equipment for high vacuum evaporation enabling simultaneous deposition of several layers of different thickness is described, together with method for measuring mass, thickness and electrical resistance of the deposits. In the case of antimony, a change in evaporation conditions causes marked changes in the structure of the deposited films. (France) G Mesnard et al, Rev Opt, 43 (6), June 1964, 273-281. 30:19 153. Influence of deposition rate and residual gas on the optical properties and structure of some thin films. (France) Differences in the optical behaviour of metallic and dielectric thin films with change in deposition rate and composition of residual gas is attributed to fundamental differences in the nature of the film-substrate bond in the two cases. A tentative explanation of the relative insensitivity of dielectric films to rate of deposition is offered. It appears that thin film can only be kept free from contamination for a limited period, and this may account for apparent contradiction of experimental results. Further study of the lattice and granular structure of thin films and stresses introduced by adsorbed molecules should enhance our knowledge of solid state physics. (France) Bibliography of 50 items. M Bourg and R Philip, Le Vide, 19 (112), July~Aug 1964, 227-232. 30 : 33 154. Selected glass substrates and the magnetic parameters of thin films. (USA) The crystal size and crystal structure of thin magnetic films is profoundly affected by the surface roughness and cleanliness of the glass substrate. If the coefficients of expansion of substrate and film are not of the same order, differential stresses will be set up in the film when the substrate is cooled. Such stresses may in their
30 : 41 156. Growth of beryllium condensates. (USSR) At substrate temperatures below 300°C, crystalline Be was deposited directly from the vapour phase. At higher temperatures this was supplemented by the vapour-liquid-crystal mechanism. Beryllium whiskers were observed at substrate temperatures 450-700°C at a rate of deposition of 2 A/see. (USSR) L S Palatnik and A 1 Fedorenko, Fiz Metallov Metallovedenie, 17 (6), June 1964, 866-871. English translation to appear in Phys
Metals & Metallography ( Great Britain). 30:41 157. A study of vacuum deposited beryllium films. (USSR) Dense films, free from cracks, were obtained when the substrate temperature exceeded a certain critical temperature (120-180°C) depending on rate of deposition and film thickness. The film examined ranged in thickness flom 0.1-50/z, whilst rate of deposition varied from 0.5 to 140 A,/sec. (USSR) L S Palatnik and A 1 Fedorenko, Fiz Metallov Metallovedenie, 18 (1), July 1964, 69-72. English translation to appear in Phys Metals
& Metallography ( Great Britain) 30 : 28 : 41 158. Preparatio~ of thin targets for work with charged particles.
(USSR) The targets were prepared by consecutive evaporation in vacuum of a metal (AI or Hg) and uranium or thorium tetrafluoride on a glass plate covered with a thin film of soft soap. The thickness of the substrate ranged from 1-40 mgm/cm and the thickness of the actual layer was up to 300 mgm/cm. These composite films are stated to be superior to those prepared by the more usual method of decomposing nickel tetracarbonyyl. (USSR) Iu A Seitskii et al, lay Akad Nauk, (10), 1964, 1724. 30:41 159. Phase composition of vacuum coudensates of cobalt. (USSR) The cobalt (99.95 per cent purity) was evaporated from an alundum crucible in a vacuum of 1 x 10 4-5 x 10 ~ torr. The distance between the upper edge of the crucible and the surface of the substrate was 80--100 mm. Both iron and copper substrates were used, one end being heated and the other cooled. In this way a temperature gradient of 200°-470°C could be established or the substrate kept at a uniform temperature of 20°C. Crystalline nature of substrate surface was ensured by a prior deposition of NaCI, whilst a deposit of SiO produced an amorphous alternative. The final films, ranging in thickness up to 25tz were separated from the substrate and examined by means of X-rays. It was found that the temperature of the substrate was mainly responsible for the phase of the cobalt deposit. With a substrate temperature of 20°C, only ~ phase cobalt is deposited and this state of affairs persists up to 200°C when /3 phase cobalt appears as well. With a further rise in temperature, the a phase gradually diminishes whilst the amount of /3 phase increases, till at 470°C, the deposit consists almost entirely of fl phase. A theoretical explanation of these experimental results is given. L S Palatnik et al, Fiz Metallov i Metallovedenie, 18 (4), 1964,
632-634. 30 : 41 160. Particle shape in the initial stages of growth of metallic condensates. ( USSR) The authors show that the nuclei of metallic condensates on an amorphous substrate in vacuo may be the result either of a direct passage from vapour to crystal (designated the V ~ C mechanism) or of an indirect vapour-liquid-crystal process ( V - ~ L ~ C mechanism). It appears that the latter mechanism is operative if the substrate temperature 0 exceeds 2/3 T where T is the melting point of the metal on the absolute scale. If 0 is less than 1/3 T direct 85
III. Vacuum applications
turn affect both the coercive force and the anisotropic field of the final product. (USA) J S Lemke, 1963 Proceedings of the lnterinag Conference (New York--Institute of Electrcial and Electronics Engineers). 30 : 41 155. On the observation of a new phenomenon in the growth of silver vapour films. (Germany) The growth of crystallites in an evaporated silver film was studied by means of an electron microscope. The evanescence of large crystallites seems to check the further growth of the smaller variety.
(Germany)
30. Evaporation and sputtering
K J l-lanszen, Z Naturforsch, 19a (6), 820-821.
30:41
148. Unsupported single crystal films of germanium. (USA) Monocrystalline oriented (100) films of germanium are obtained by sublimation of an NaCI substrate in vacuo. (USA) C W Skaggs and J R Jones, J Appl Phys, 35 (10), Oct 1964,
3013-3014.
30 : 52 149. Possible causes for the decrease of the lattice constant in thin films. (USA) Experiments with Ag, AI, Pb and Bi films lead the author to conclude that changes in the lattice structure are due to surface tension compressing crystallites in the film. (USSR) Y F Komnlk, Soy Phys Solid State, 6 (2), Aug 1964, 479-483. Translated from Russian original Fiz Tverdogo Tela, 6 (2), Feb
1964, 611-618.
30 : 56 150. The use of low frequency capacitance to measure the thickness of natural oxide layers of aluminium. (Great Britain) The author points out that in the presence of a transition layer (insulator-metal) low frequency capacitance measurement at a single frequency will nearly always overestimate the true insulation thickness. (Great Britain) P J Holmes, Solid State Electronics, 7, Aug 1964, 633-635. 30 : 41 : 52 151. Vapour deposition at low supersaturatlons. (USA) From an experimental study of the vapour deposition of zinc on Pyrex glass the author concludes that heterogeneous nucleation will proceed more rapidly by impingement of unstable embryos than by single atom addition under steady state conditions. (USA) S J Hruska, Acta Metallurgica, 12 (I), Nov 1964, 1211-1214. 30 : 41 152. Evaporation techniques and the study of thin films: application to antimony. (France) Equipment for high vacuum evaporation enabling simultaneous deposition of several layers of different thickness is described, together with method for measuring mass, thickness and electrical resistance of the deposits. In the case of antimony, a change in evaporation conditions causes marked changes in the structure of the deposited films. (France) G Mesnard et al, Rev Opt, 43 (6), June 1964, 273-281. 30:19 153. Influence of deposition rate and residual gas on the optical properties and structure of some thin films. (France) Differences in the optical behaviour of metallic and dielectric thin films with change in deposition rate and composition of residual gas is attributed to fundamental differences in the nature of the film-substrate bond in the two cases. A tentative explanation of the relative insensitivity of dielectric films to rate of deposition is offered. It appears that thin film can only be kept free from contamination for a limited period, and this may account for apparent contradiction of experimental results. Further study of the lattice and granular structure of thin films and stresses introduced by adsorbed molecules should enhance our knowledge of solid state physics. (France) Bibliography of 50 items. M Bourg and R Philip, Le Vide, 19 (112), July~Aug 1964, 227-232. 30 : 33 154. Selected glass substrates and the magnetic parameters of thin films. (USA) The crystal size and crystal structure of thin magnetic films is profoundly affected by the surface roughness and cleanliness of the glass substrate. If the coefficients of expansion of substrate and film are not of the same order, differential stresses will be set up in the film when the substrate is cooled. Such stresses may in their
30 : 41 156. Growth of beryllium condensates. (USSR) At substrate temperatures below 300°C, crystalline Be was deposited directly from the vapour phase. At higher temperatures this was supplemented by the vapour-liquid-crystal mechanism. Beryllium whiskers were observed at substrate temperatures 450-700°C at a rate of deposition of 2 A/see. (USSR) L S Palatnik and A 1 Fedorenko, Fiz Metallov Metallovedenie, 17 (6), June 1964, 866-871. English translation to appear in Phys
Metals & Metallography ( Great Britain). 30:41 157. A study of vacuum deposited beryllium films. (USSR) Dense films, free from cracks, were obtained when the substrate temperature exceeded a certain critical temperature (120-180°C) depending on rate of deposition and film thickness. The film examined ranged in thickness flom 0.1-50/z, whilst rate of deposition varied from 0.5 to 140 A,/sec. (USSR) L S Palatnik and A 1 Fedorenko, Fiz Metallov Metallovedenie, 18 (1), July 1964, 69-72. English translation to appear in Phys Metals
& Metallography ( Great Britain) 30 : 28 : 41 158. Preparatio~ of thin targets for work with charged particles.
(USSR) The targets were prepared by consecutive evaporation in vacuum of a metal (AI or Hg) and uranium or thorium tetrafluoride on a glass plate covered with a thin film of soft soap. The thickness of the substrate ranged from 1-40 mgm/cm and the thickness of the actual layer was up to 300 mgm/cm. These composite films are stated to be superior to those prepared by the more usual method of decomposing nickel tetracarbonyyl. (USSR) Iu A Seitskii et al, lay Akad Nauk, (10), 1964, 1724. 30:41 159. Phase composition of vacuum coudensates of cobalt. (USSR) The cobalt (99.95 per cent purity) was evaporated from an alundum crucible in a vacuum of 1 x 10 4-5 x 10 ~ torr. The distance between the upper edge of the crucible and the surface of the substrate was 80--100 mm. Both iron and copper substrates were used, one end being heated and the other cooled. In this way a temperature gradient of 200°-470°C could be established or the substrate kept at a uniform temperature of 20°C. Crystalline nature of substrate surface was ensured by a prior deposition of NaCI, whilst a deposit of SiO produced an amorphous alternative. The final films, ranging in thickness up to 25tz were separated from the substrate and examined by means of X-rays. It was found that the temperature of the substrate was mainly responsible for the phase of the cobalt deposit. With a substrate temperature of 20°C, only ~ phase cobalt is deposited and this state of affairs persists up to 200°C when /3 phase cobalt appears as well. With a further rise in temperature, the a phase gradually diminishes whilst the amount of /3 phase increases, till at 470°C, the deposit consists almost entirely of fl phase. A theoretical explanation of these experimental results is given. L S Palatnik et al, Fiz Metallov i Metallovedenie, 18 (4), 1964,
632-634. 30 : 41 160. Particle shape in the initial stages of growth of metallic condensates. ( USSR) The authors show that the nuclei of metallic condensates on an amorphous substrate in vacuo may be the result either of a direct passage from vapour to crystal (designated the V ~ C mechanism) or of an indirect vapour-liquid-crystal process ( V - ~ L ~ C mechanism). It appears that the latter mechanism is operative if the substrate temperature 0 exceeds 2/3 T where T is the melting point of the metal on the absolute scale. If 0 is less than 1/3 T direct 85