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Si(001) surfaces
A253 Surface Science 214 (1989) 141-148 North-Holland, A m s t e r d a m PHOTOELECTRON DIFFRACTION T. ABUKAWA
141
DIFFRACTION STUDIES
OF
AND
Cs, K/Si(001)
LOW
ENERGY
ELECTRON
SURFACES
a n d S. K O N O
Department of Physics, Faculty of Science, Tohoku University, Sendai 980, Japan Received 18 August 1988; accepted for publication 2 December 1988 X-ray photoelectron diffraction patterns of C s 3 d core levels for the full-Cs-coverage Si(001)2 × 1-Cs surface have been measured and analyzed kinematically. It is found from the analysis that one monolayer of Cs, i.e., Cs/surface-Si ratio of unity, is present over the substrate forming a double-layer (upper and lower) array of atoms. The arrangement of Cs atoms in the double layer is essentially the same as the K double layer for the Si(001)2 × 1-K surface. New surface orders are reported that can be formed by the deposition of Cs or K atoms onto an annealed Si(001) substrate.
Surface Science 214 (1989) 149-164 North-Holland, A m s t e r d a m INCORPORATION DURING J. K N A L L ,
MBE
OF
149
In BY RECOIL
GROWTH
OF
IMPLANTATION
Si(100)
J.-E. SUNDGREN
Department of Physics, Linki~ping University, S-581 83 Link~ping, Sweden L.C. MARKERT
and J.E. GREENE
Department of Materials Science, the Coordinated Science Laboratory, and the Materials Research Laboratory, 1101 W. SpringfieM Avenue, University of Illinois, Urbana, IL 61801, USA Received 17 August 1988; accepted for publication 23 November 1988 We report on the incorporation behavior of thermally evaporated In during Si growth by molecular beam epitaxy in combination with secondary implantation using Si + ion b o m b a r d m e n t induced by a negative substrate bias Vs. The In incorporation probability ol. as obtained by SIMS (secondary ion mass spectroscopy) has been combined with measured values of the Si + ion flux Jsi÷ and with mean residence times ~'des for In on the Si surface obtained from desorption measurements to yield an effective cross section for secondary implantation g = al./(~'Jsi+ ). With Vs = - 2000 V, g was found to decrease from - 10-16 cm 2 at a growth temperature T~ = 500 ° C to - 4 × 1 0 -17 cm 2 at T~= 7 0 0 ° C . Increasing ~ from - 5 0 0 to - 2 0 0 0 V, decreased g from 3 × 1 0 -16 t o 6 × 1 0 - 1 7 c m 2.
141
DIFFRACTION STUDIES
OF
AND
Cs, K/Si(001)
LOW
ENERGY
ELECTRON
SURFACES
a n d S. K O N O
Department of Physics, Faculty of Science, Tohoku University, Sendai 980, Japan Received 18 August 1988; accepted for publication 2 December 1988 X-ray photoelectron diffraction patterns of C s 3 d core levels for the full-Cs-coverage Si(001)2 × 1-Cs surface have been measured and analyzed kinematically. It is found from the analysis that one monolayer of Cs, i.e., Cs/surface-Si ratio of unity, is present over the substrate forming a double-layer (upper and lower) array of atoms. The arrangement of Cs atoms in the double layer is essentially the same as the K double layer for the Si(001)2 × 1-K surface. New surface orders are reported that can be formed by the deposition of Cs or K atoms onto an annealed Si(001) substrate.
Surface Science 214 (1989) 149-164 North-Holland, A m s t e r d a m INCORPORATION DURING J. K N A L L ,
MBE
OF
149
In BY RECOIL
GROWTH
OF
IMPLANTATION
Si(100)
J.-E. SUNDGREN
Department of Physics, Linki~ping University, S-581 83 Link~ping, Sweden L.C. MARKERT
and J.E. GREENE
Department of Materials Science, the Coordinated Science Laboratory, and the Materials Research Laboratory, 1101 W. SpringfieM Avenue, University of Illinois, Urbana, IL 61801, USA Received 17 August 1988; accepted for publication 23 November 1988 We report on the incorporation behavior of thermally evaporated In during Si growth by molecular beam epitaxy in combination with secondary implantation using Si + ion b o m b a r d m e n t induced by a negative substrate bias Vs. The In incorporation probability ol. as obtained by SIMS (secondary ion mass spectroscopy) has been combined with measured values of the Si + ion flux Jsi÷ and with mean residence times ~'des for In on the Si surface obtained from desorption measurements to yield an effective cross section for secondary implantation g = al./(~'Jsi+ ). With Vs = - 2000 V, g was found to decrease from - 10-16 cm 2 at a growth temperature T~ = 500 ° C to - 4 × 1 0 -17 cm 2 at T~= 7 0 0 ° C . Increasing ~ from - 5 0 0 to - 2 0 0 0 V, decreased g from 3 × 1 0 -16 t o 6 × 1 0 - 1 7 c m 2.