Journal of Non-Crystalline Solids 95 & 96 (1987) North+loUand, Amsterdam
PHYSICAL
Paolo *
ASPECTS
MAZZOLDI’
Unite 35131
and
SURFACE ANALYSIS
Antonio
MIOTELLO+ Fisica dell’Universit8, Nazionali INFN,
Studi de1 Consiglio Nazionale Scientificm e Tecnologica,
Surface
analysis
techniques,
problems when by electrons,
applied
which insulating
to
protons models.
theoretical
and
heavy
Via Legnaro,
delle Ricerche Pow (Trento),
use charged materials.
ions
and Italy
particles Surface
irradiations
Marzolo Italy
Istituto
8,
per
as probe, modifications
are
la
present induced
discussed,
including
INTRODUCTION The
surface
termination ion,
analysis of
surface
sis
one
interaction the the
cause
electrical
physical the
paint
of In
view
this
(Auger
Electron
phasizing, A brief they
for
review
NRA (Nuclear
we
the
deducing want
not
to
are
applicability
discuss
the to
SIMS
nuclear the
techniques
0022-3093/87/$03.50 @ Elsevier Science F’ublishers (North-Holland Physics Publishing Division)
scientists’
B.V
use
induce
ions).
determiparticles
radiation
mobile
governing
may
ions,
of
interaction both
such
in
from
techniques,
Ion
such
89 AES
Spectrometry),
Mass
Spectrometry)
by
the
incident
(RBS
and
NRA)
Community.
bea basic
techniques.
Backscattering
induced
glass
which
important,
analysis
(Secondary
modifications
analyzed emitted
that
limits
some
be
analyor
region.
very
RBS (Rutherford
the of
effects analyzed
materials
the
de-
atoms.
techniques
mechanisms
glass
and
of
the
corros-
electrons to
energy
in
leaching,
modern
material
matrix
other the
the the
Analysis)
common
the
interaction
and
particular,
description we
leave
Spectroscopy), Reaction
in
of
particles
and
and
to
the
of
In
as
(photons,
and
analytical
formation
aspects
charged
with kind
important
such
mechanisms.
identification
elements,
extremely
glass,
radiation
beam
the
is
upon
of
Both
insulators
field
alkali
The
incident
or to
a source
radiation.
signature
particular
tween
the
of
applied
glasses acting
ion-exchange
with
of
emission
When
insulating
processes
concerned
The
allow
of
various
contamination,
is
nes
since
161
CISM-GNSM, Oipertimento di Padova, Italy; and Laboratori
+ Centro Ricerca
1.
IN GLASS
161 - I72
em-
beam. will
be
given,
2. rwcr,E~R
TECHNIQUES
Beckscattering get to
constituents a few
energy’
and
. A beam
get
surface
to
of
target
tering
and
the
particle
scattering atom
will
during
below those
its
the
ratio
without
spectrum get.
Five
ments
1.8
depth
steps
ced
low
reaction
analyzed
with
section
of
the
of
incoming
the
total
the
cross-section
If the
the
products
the
also
at-a
usually
the
of
the
of
nuclear is
particles
is
nuclear
greater
target nuclei
penetrate
elastic
into
backscat-
due
to
anelastic
is
from
lower
an
than
that
permits
de-
the
corresponding oxygen
reaction
useful
for of
the
the
be most
resonance energy
are
at
The
detected
for
energy
determine
structure
depth
upon
a depth
the to
resonance
and cross-
of
appropriate
energy
eleindu-
differential
as a function
useful
of
reactions
which
quite
ele-
information.
When the
However,
tar-
target
analysis
nuclear
particles RBS.
energy
be seen.
isotope-sensitive
is
nuclei.
to
can
analysis
constant
this
concentration
glass
for
can
their
and
1 shows
nearly
the
tar-
the
a thick
charged
reach
target
from
provide
than will
of
the
Fig.
specially
reactions
and
backscattered
on the
investigated
angle
the
ion
but
of
as reference.
and
used
reaction
particles,
beam energy
material,
These
large of
spectrum
elements
energy,
sodium
same apparatus
nuclear
amount
sample
based
fraction
to
backscattering
compound
technique,
beam
undergo
which
A”
a Van de Graaf
backscattered
an energy
100
surface.
elastically
is
energy,
elastically
tar-
analysing
element
atoms,
a lower
at
of
incident
After
energy
of
order
number,
the
the
magnesium,
particles.
observed
of
to
surface
ions
the in
by an
enough
the from
A small
excitation. with
on the
to
nuclei
close
of
ranging
sample.
the
with
Thus
atoms
ions
nuclear
of
mass
produced
scattered
come
be detected
in decreasing
atomic
by charged
path.
the
target
mass do not
a standard
silicon,
A complementary of
the
profiles
MeV aHe+
calcium,
ments
the ions
be detected
will
requiring
of
to the
analysis
the
of
of
by similar
So an appropriate of
4He’
by electronic
return
surface
scattered
termination
according
usually
surface
the
depths
ions,
interaction
energy
over
surface,
ions
through loose
about
distribution
close
of
incident
be backscattered
the
of
a function the
information
target
the
The energy
is
Most
onto
sufficiently
scattering.
atom.
the
monoenergetic
directed
beam comes
elastic
in-depth
from
of
is
provides
their
micrometers,
accelerator, the
(RBS AND NRA)
spectrometry
slowing
below
in
profiling.
the
down surface
in
P. Mo;:oldi.
and
the
reaction
depth.
yield
By varying
invesligated )ZONe
le.
Fig. the
will
the
for
2 shows
the
surface
ions
as
a
glass
is
basically
Two
Sodium
of
of
FIGURE
one
useful and
(upper
can
By
depth
to
the
obtain
the
reactions
it
and
that Na+
from
Many
mobile
ions,
phenomena 3.1 a)
dielectric
part
occur
when
an
electric
preferential
Low-mess
While small
of
determine
Electric
ion field
much
profiles concentrat-
hydratation
process
in
profiles
leached
of
( -)
an
unleached
glass.
INTERACTION
phenomena formation
part)
relative
are profi-
Ht.
H depth
( A ) and
tor:
field
Hydrogen
a glass
Na and
RADIATION-GLASS
the
1
1.8 MeV RBS spectrum target
3.
the
with
that
of
glass
the
the
at
profile
(lower
of
appears of
for
hydrogen
comparison
replacement
depth the
)“C
163
concentration
in
*H(15N,ay
part)
glassz.
the
~~prspec~s irr ,qlu.~s srrrfurce LIIIU!I.SIS
proportional
very
the to
be energy
sodium
due
Pl~prol
detection
hydrated
function
/
thus
incident
element.
z3No(p,a
near
A. M~o~llo
work
concerns
an
ionizing
sputtering
a modification or
electron
beam
field,
of
strikes
radiation
the
damage,
and
cooperative
near
surface
surface
of
enhanced
transport glass
an
insula-
diffusion
of
effects3.
Such
composition.
irradiation
formation has
been
done
the
basic
phenomena
solids.Electrostatic
on
potentials
radiation of
effects
in
radiation-induced are
induced
insulators, electric
at
the
surfaces
only fields of
a in
insu-
lating se
materials
sible
in
dielectric
and
of
trons
to
charges.
prevented
insulators.
In
the
dielectric
conditions
ce
electric
field
occurs)
is
down,
however,
is
mobile
condary
primary
electron
typically
much deposition
continuity
where
is
temperature. well B(x,t)
for
the
es by the
E(x,t)
in
the
is
surface
may be calculated
by
been
other
that
end
charge integrating
in
in
a
silicate
experimenta surfacertainly
breakdown
Dielectric In
surface
Since
the
break-
order
to
is
charge,
in
the
reasonable
due
to
seis
problem
density
at
field due
time
the
diffusion
of
form:
(1)
t
e the
and electron
induced
by
to
secondary
Poisson’s
the
(i.e.
consider
8 (s(x,t)q(x,t))+s(x,t) 8x
constant,
be-
beam size
to
field-assisted
a one-dimensional
explain
process
electron
involved
electric
choice
temperature.
and
typical
sec.
that field
verified
B recombination
positive
it
show
electric
recombination,
experiments.
lengths
-pe
electric
field
dielectric
depth)
in
beam
electric
lo-”
elec-
appropriate
electron
the
positive
experimentally by an
about
over
supply
authors the
beam
es probe
film
introduced
of
analysis
point of
involved
present
ions,
incident
layers
the
undergoing
immobile
charge
the
an
be operating.
Boltzmann
positive
the
proposed
8zqkt) ~ 8X”
the
has
reported
ordinary
electron
the
Auger
which
concentration
ks
for
dynamics
of
time
the
the
of
not
and migration
= (wkksT/e)
mobility,
(at
and
than range
electron
q(x,t)
electron
are
must
larger
6q(x, t) .st
during
electrons
equation
primary
ions
Miotelloq
emission,
the it
angle
electrons
observed
metallic
by
in
growth
an interval
finding
electron
the
not
the
may be prevented
the
107 V/cm in
that
analysis
incidence
of
attained
experimental
tween
Auger
primary
metallic
role
phenomena
alkali-metal . If
nre
a thin
pos-
mobile
the
charges
The-
beam,
the
of
positive
performed
quantitatively
containing
al
this
of
beam energy,
us describe
glass
case
of
Deflection
compensating
utilized.
incident
depositing
clear thus
a major
breakdown
electron
is
are the
electromigration
when
calculations play
of
particles.
by
glasses
mobility
formation.
Let
It
irradiated
Preliminary
electronic
that
phenomena,
particles
deflection
sample,
emitted
frequently
the
the
the
the
charged
induce
breakdown are
surface
in
of
energy
involving may
breakdown
the
particles,
techniques
potentials
dielectric
a shift
of
when
electrostatic
the
equation:
depth
x,
charge primary electron
PC is end
the T the
electrons emission.
as
165
GE(x,t) -=-
n(x,
6x 6
is
cal
the
vacuum
glass).
dary
S(x,t) for in
electric the
ref.
field
a time
ration
of
by
yield
MC is
different
analysis.
alkali
much
fig.
an Auger
cess ( since cally
In
(10-q
ions
does
the
number
smaller
3
It
is
small
with
role
in
number
of
the in
charge
the
electron
are
attained
to
a typical
du-
the
mobility
of
recombination
electron
primary
surface choosing
for
that
is
and
conditions
proved
involved
the
1,2
respect
Boun-
electrons of
eqs. values
state
a typi-
electrons.
evolution
different
for
primary
of
be easily
ions
global
primary
time
steady
very
a relevant
positive the
four
zero,
may also
play
of
the
(+=5
of
integration
at
which
of
process
we report
from
constant
function
numerical y’=l)
set)
not
than
dielectric
recombination
obtained
interval
the
6
depth-deposition
surface
electron When
63 Er
and
the the
4.
(as
secondary
mobility.
the
is
condition
discussed
in
permittivity
t)
migration
prois
typi-
electrons.
ELECTRICFIELDAT x IO (“km, FIGURE 3 evolution of surface in AES experiments.
Time field
Reducrd depth IyRgl
electric Primary
In
fig.
line)
4
calculated
shed-line)
both
according
calculated
this
section
addit
ion
(i.e.
we report
pal).
we want of
the
total
Moreover
the to
the
primary usually
by numerical to
note
that
positive the
drift
of
primary
distribution
quoted
by requiring and negative
electron
electron
integration
FIGURE 4 distribution
models of that
charge electrons,
eqs.
functions.
function
as well 1,2.
as the Before
IX<107 V/cm turns
out towards
(solid
the to
one
algebraical
be about the
(da-
concluding
surface
zero of
P. Mor:oldi
166
the
analyzed
glass,
secondary
to
electron
layer
where
these
figures
positive and of
/ Pl!,~~nl
compensate
emission,
the
contribution
A. Mioreh
image
;,I ,~luss surfore
positive reduces
are
located.
charge
charged the
we we
effects
mo!rs;.,
holes
thickness
in
by the
the
on the
justified
the
left
of
As B conclusion,
l ,=5-10,
typically
the
the
drastically charges
since
for
mperrs
in
calculation
surface basis
of
neglecting of
the
the
electric
field. b)
Alkali
In
fig.
da-lime
transport 5 we
glass.
FJ surface
the
towards
the
proton the
surface the
surface
(proton
target
has
temperature
evolution
of
Moreover, elapsed and
alkali
(incubation of
FIGURE of alkali
proton
lime
(fig.
occurs
exe
present alkali
by a
irradiation) migration
time). or electron
a so-
depletion.
Such
a depth
roughly
the
interior
in
the
case
Ce surface accompanied
after
interval
current
from
migration
is starts
This
at
of
6).
glasses:
accompanied
(electron
surface
migration effects
soda
analysis
accumulation
range
Other
during
an alkali
alkali
is
depletion
Irradiation
Time
7,8).
irradiation) Na
accumulation. interval
electron
bombardment
(Figs.
recorded
by an alkali
primary
irradiation
surface
signal produces
accompanied
proton
surface
or electron
while
time
of
glasses
Na Auger
irradiation is
to maximum case
analyzed
the
Electron
depletion
corresponding In
in
report
is
depletion, by a Ca
a characteristic a function
of
density.
time (sect 5 Auger
signal Normalized les after
of
towards
FIGURE 6 Na and Ca depth profielectron irradiation.
the
167
Time 600
FIGURE 7 surface alkali bombarded glasses.
evolution keV
of
proton
signal
in
i
oMPTH
FIGURE 8 Na and Ca depth profiles keV proton irradiation.
Normalized after 600 The
alkali
flux
due
one-dimensional
to
the
form)
ordinary
and
electric
(nm)
field
assisted
diffusion
(in
is: 8c(x,t) J = -D ~
+C(x.t)@(x)
(3)
8x
where
D and
w are
Nernst-Einstein
the
alkali
relation
gligible,
and C(x,t)
continuity
equation
diffusion
if is
alkali
0 to
time
be
@C(x,t) = D ___
boundary
(see
should
calculated those
profiles.
Numerical starting
species
x and time
is
t.
ne-
By the
The
full fields
for
the
the
the
lines
in
fig.
for
positive irradiated
of
initial
including quantitative
electron
(C(x,t)E(x))
(4)
8x
integration
from
conditions, yield
electric evaluated
mobile
depth
by the
8 - p -
8x2
constant.
appropriate
alkali
at
connected
we obtain
interval,
ref.3)
between
concentration
8t
assuming
constants,
correlation-phenomena
the
8C(x,t) ~
diation
mobility
and
the
ionic
description 5,7,8 ion
eq.
4 during
alkali
are irradiation glasses.
desorption of
the
the
irra-
concentration
the
final
theoretical are
opposite
and with cross-section experimental profiles. in
The sign
to
3.2
Enhanced
The
diffusion
in
coefficient
literature
particle literature
In
Fig.
rent
of
the
dependence the
bond
the
DX of
process
magnitude
that
to
the
irradiated
the
DL~,
of
cur-
temperature
literature.
than
break
quoted
irradiation
from
higher
ones
proton
when
taken are
we ascribe
the
the
we report
coefficient,Dth,
reported by charged
measurements.
600 keV
figure
coefficients
of
than
temperature
same
data
self-diffusion for
target the
the induced
greater
alkali
coefficient
the In
diffusion
irradiation
STIMULATED
of
Na self-diffusion
diffusion
during
by anelyzing modifications,
standard
15 ~.~A/cmz.
calculated
en enhanced
orders
calculated
of
obtained profile
through
es e function order
of
T<500'K
cal
the
glasses
D*,
alkali
some
obtained
9 we show
is
the ere
end
soda-lime
values
concerning
irradiation,
in
4.
diffusion
the
For
indicating
alkali
chemi-
energy)
stri-
glasses.
DBSORPTION
When ions
(or
ke .s surface
primary
of
electrons
en insulator,
and also emission
photons
of
ions
of
sufficient
end neutrals
is
frequently
ob-
serveds. Two different of
processes
electrons
and
excitations ing
be long There
enough are
in
possible:
cm)*
I to
moval
of
state
ABZ+.
sible
in
insulators,
how this
from
the
to
three
electronic
deexcitations
glasses,
we
electron
irradiation
in of
to
many the
ground
ionized
excited
final
If
processes state states
Electronic of
to
states atomic
AB to
an excited
es example dissociation, neutral
characterized or
A++B,
to
state
by the
e
A++B*
may
motion.
we consider molecule
electron
insulat-
electronic
for
(An+)*
products
ionization
sputtering
be transferred
or bonding
various
glasses:
scattering.
the
be accomplished.
antibonding
Dissociation last
ten
AB+ or excited
e nonbonding,
the
energy
in
by elastic role
lifetimes
At-excitation,
transitions ionized
effects
atoms
a dominant
excitation
ways
molecule
desorption of
probably,
allow
numerous
are
As to
to
induce
displacement
most Indeed
e diatomic
Auger
direct
play,
materials.
q ey
doubly or
re-
ionized
A++B+
is
pos-
situations. excitation
play
q ey quote
the of
mechanisms
e central
role.
results
experimental
soda-silica
notice
glass.
that
As en indicative of
The alkali
inter-
end
example,
intra-atomic pertinent
Na+ desorption desorption
induced is
initially
to by
P. Marzoldi,
I. A
A. Miorello
promoted
by the
core
holes
the
levels
(see
fig.
Si-2p
I
/ Plry.vicul avpec~~ in glrrrs surface ondysis
created
either
in
the
04s
169
electronic
levels
or
in
10j6.
l
1%
FIGURE Calculated enhanced ficient for proton
5.
COOPERATIVE Many
the
and
same
tential
diffusion irradiation.
are
rank
are
R,
an electric
where
9
mical
potential,
is
the
charges
ion
induced
allow Here
the
in
the
field,
migrate.
in
simply the
K-Ce
of
A thorough
of report
its
two
pri-
ions,
induced
charged
transport
carrier
independent
of
the
in
structure
an indicative
and Na-Ca
include
each
is
migration
charged
a non-uniform have
the
by
defects,
processes
affected
temperature
defined
by the
has
of po-
?I
with
of
a silicate
the
p is
potential
connection
the in
with
some suggestions
presented
in
ref.
cooperative glass
a de-
expression:
p + 4,
q
and
T distribution,
electric 5 in
along been
example in
eq.
i,j
general
as:
@ the of
glasses
species
following
carrier,
discussion
phenomena
processes
principle,
of
potential
charge
transport
Curie
flux
fluxes
electrochemical q the
of
fluxes3.
presence the
a simplification we
the
transport
These
the
independent with
the
glasses. to
i.e.
all
a system
species
and of
FIGURE 10 yield as a function beam energy .
Na sputtering mary electron
in
of
According
coupled, of
Energylrvl
PROCESSES
irradiation
we consider
pendent
coef-
generally’involved
photons.
gradient
If
curring
9
particle
phonons
HI
Electron
TRANSPORT
carriers
charged
Cl ml 4006W 8001
during
chewhich
radiatwhich
3. effects AIL?.
oc-
An interesting the
one reported
coefficients bly
result
are
due
tice
to
in
fig.11
not
accompanied
is
electrodynamical
deformations,
transport
emerging
from
connected by
to
high
screening
when
a theoretical
charges
the ionic
effects,
of
analysis
effects
possibility
that
high
mobilities.
This
is
possibly
different
of
kinds
diffusion most
connected
to
local
involved
in
the
are
like
probaletglobal
processes3.
20Na,OlOCa0 70 SiO
Experimental and calculated electron bombardment time. 6.
the
ion
irradiation
of
near-surface
preferential From
general
points:
(1)
the
thickness
ion
dose,
reaching
The
alkali
profile,
cident
the
ion
(3)
The depleted
(4)
The
alkali
of
The
in
alkali
for
layer
with
heights
agreement
as function
of
produces
be explained
in
in
diffusion
literature
we can
layer
is
alkali of
terms
in
the
an
alkali
implanted
underline
a function
depletion
the
of
the
re-
following
implantat-
value.
a fixed
irradiation
dose,
is
independent
of
the
in-
density. thickness
increases
mechanisms of
with
glasses
enhanced
depleted
the
electronic the
seem
alkali
cross-section the
may
a steady-state
depletion
sputtering
pendence
which
reported
the
current
silicate
and radiation
results
rc~om temperature) (6)
alkali
region3*7,
sputtering
gion7-8.
(2)
peak
HGAVY ION IRRADIATION Heavy
in
FIGURE 11 and Ca Auger
alkali
physical
with to
element of
the
implantation
independent
present
alkali
stopping
be
in
elements power
mechanisms
for
energy. (at
the
least
en almost
a variety
of
in
near-
glass.
shows
discussed
for
section
linear
incident 4.
deions,
P. Mn::uldi. (6)
The
modified
A. Mmello
layer
pnrticutar
for
is
high
/ PI!,:kwl
thicker
energy
171
rrspem in ~C$US.Y srrr/crre oru~!,~is
than
the
culculated
doposiI.ion,
incident
indiwl.ing
H
ion
migrcllion
rouge,
in
of’ produced
defects. More
recent.
radiation, an elwtrir dent
Fig.
is
to
of
at
about
Ar
evaluated
the
alkali
where
the
B 5 8
indicating movement of DEPTH 500 500 400 300 I 4 I I 300 lb”
ot
of from that
the Rb ion (run) zoo 100 0 1 I I A,*
FIGURB 12 RBS spectrum from Rb in Ar glasses at 300 keV.
data radiation occurs
it-radiated
of evi
also
of
the
Fig.
2)
3000
Lhe
pro
a maximom
at
a
A, corresponding
an Hb segregation
calculation are
one eV for 13.
effects without
of
reported of
beam
irradiation
doses
Lemperatures, is
For
keV Art
oc-
range.
concerning
hundredlhs
the the
are
Rb atoms,
a 300
peak,
a depth
implantation
Dth, some
effec1.s
with
low dose
Ar projected
target
coefficient
ir--
process
from
LOO’C
1) a surf;icc
(f or details different
energy
may be evaluated
energy,
at
Such
scattering of
For
depletion
At higher
DX values
the
features:
the
after
diffusion
ion.
ions/cm”.
to
profiles,
the
r.hurgc.
concorning
a large
range.
element
activation
process ksT
three
corresponding
nlknli to
a temperature
10.5~10’6
by
Rb self-diffusion
fective
run at
A, 3)
in Ibe
deposilrd
incident
RBS specl
projected
ion
of
and
1000
u depth
fcoturrs as a contribution
incident.
irradiated
4.5x1O’e
The
The
to
characterized
of
the
the
glass, of
pcculi~r
velocity
12 shows
al. doses
curs
duo
a higher
a RbzO-SiO2
file
showed
may be explained
field
with
depth
work
which
This create
see
reported
for
in
comparison. the
value
alkali is
a defect
ref.
An eftransport
comparable distribuLion
jump.
Calculated cient of ed-glasses.
3)
Fig.13.
FIGURB 13 enhanced diffusion alkali in heavy ion
coeffiirradiet-
to
7.
INCUBATION Many
last
TIME
attempts
decade,
problem
to
but
explain
the
seers
at
the
question
incubation is
present
still
an
phenomenon open.
have
been
Some connection
interesting
stwting
made
during
the
wilh
a percolation
for
R theoretical
point
*“S”et-.
8.
CONCl,USIONS A review
charged field and
of
transport
particle formation,
preferential
processes
induced
irradiation
has
correlation
transport
sputtering,
have
been
in
alkali
given.
Many
effects,
been
containing processes,
enhanced
glass such
by fesl as electric
diffusion
processes
emphasized.
REFERENCES 1)
P.
Mezzoldi
2)
G. Della mentale
3)
P.
and
G.
Mea, M. de1 Vetro
Mazzoldi
and
Della
Guglielmi 6 (1985) A.
Verres
Mea,
Refract.
and R. 139.
Dal
Rad.
Eff.
Miotello:
35
Maschio,
98
(1981)
Rivista
(1986)
205,
31. della
and
Stezione
reported
Speri-
referen-
ces . 4)
A.
Miotello,
5)
D.
Menzel,
6)
Y.X.
7)
P.
Wang, Mazzoldi,
Phys. Nucl. F.
L&t. Instr.
Ohuchi Nucl.
and Instr.
103A
(1984)
Meth.
B13
P.
Holloway,
M&h.
279. (1986)
209
J. (1983)
507. Vat.
Science
1089.
Tech.
A2 (1984)
732.