1151
Journal of Nuclear Materials 122 & 123 (1984) 1151-1155 North-Holland, Amsterdam
PRELIMINARY
INVESTIGATIONS
J.R. ELLIOTT:
OF THE SURFACE
R.S. WILLIAMS:
CHEMISTRY
L. KELLER=and
Department of Chemistry*, Tokamak U.C.L.A., Los Angeles, California
OF TITANIUM
GETTERING
R.J. TAYLOR=
Fusion Laboratory=, 90024+
Department
of Mechanics
and Structures=,
The concentration of adsorbed oxygen on titanium foils and thin films deposited on stainless steel has been measured as a function of adsorbant temperature and surface carbon concentration using The oxygen gettering efficiency of foils is dependent on the surface Auger electron spectroscopy. carbon concentration, but saturated surfaces can be successfully regenerated by heating the foils However, carbon diffuses into titanium films from to dissolve oxygen and carbon into the bulk. heated steel substrates and poisons the titanium surface with respect to oxygen adsorption. the walls
1. INTRODUCTION Experiments Auger electron
involving
the in situ analysis
spectroscopy
(AES) of the evapora-
tion of titanium
onto 304 stainless
strates followed
by exposures
steel sub-
to various gases
have been used to model the conditions the Macrotor
and hot wall Microtor'
the base pressure analysis
it was possible
present
tokamaks.
of the ultra-high
vacuum
system was in the low lo-"
gases present
kamak systems with partial
pressures
torr range in a controlled
manner.
in the 10m8 pre-
vious studies of adsorbed
in arcing of the
tion or sputtering
on pure foils and on deposited sults are obtained the base pressure
that occurs
thin films.
for the evaporation
Re-
of Ti at
of the UHV system and in the
presence of H2 and CO at pressures
similar to
those found in the tokamak systems. Cycles of H2 discharge deposition
cleaning
are used in tokamaks
and titanium
i.e., being able to restore the gettering
As seen in the Gibb's Free Energy of for-
(fig. 1), metals which
are known to be good oxygen getters form oxides that are stable up to temperatu;? melting
points ofmostmaterials.
sible getter material
tium into the walls and adsorption
tion properties
ium surfaces
DE-AM03-76SF-00010,
0022-3115/84/$03.00 @ Elsevier Science Publishers (North-Holland Physics Publishing Division)
B.V
appears
Mod.
017.
and measures
the
These oxides by hy-
of finding a reverto be remote.
This study focuses on the chemistry
oxygen under different
by USDOE Contract
exceeding
are also stable with respect to reduction
loclean vacuum and to reduce high Z impurities. 12 The uptake of impurity gases as well as tri-
'This work supported
capaci-
(AGO) data plotted as a function of temper-
ature for various metals
a
of gases onto
feature
of such a process,
drogen, so that the possiblity
to maintain
on the sur-
desirable
ty of the coating by heating and pumping on the system.
surface chemistry
Another
would be the reversibility
re-
due to thermal desorp-
by ions impacting
face from the plasma.
mation
be-
reactor is one in which there is trap-
lease of high Z impurities
shows that there are significant tween the practical
The ideal surface for the first wall of
ping of all gases except hydrogen and minimal
gases on the surfaces 2-9 of Ti foils have been performed, but this work differences
Other effects
the wall coating which results
a tokamak
of Ti
effects.
into the
and flaking of
As
in the to-
Several
plasma with deleterious
plasma.
(UHV)
in reactor design,
of gas uptake are embrittlement
in
torr range,
to study the interaction
surfaces with background
by
is of importance
since these species can be released
of titan-
their ability to adsorb
circumstances.
The adsorp-
of pure titanium polycrystalline
J.R. Elliott et al. / The surface chemistry of titaruutn gettering
sorption
studies were all Matheson
used without
atures were measured
-40
research grade
further purification.
Sample temper-
by Pt-PtlO%Rh
that were spot welded
thermocouples
to the back of the samples.
Initial studies of Ti surfaces were done on a foil of .125 mm thickness
-80
foil was cleaned
and 99.99% purity.
The
in vacuum by Ar ion bombardment
= 2x10-5 torr at energies
up to 3 keV. at 'Ar The samples were heatgd resistively by passing
-120
currents
of up to 20 A through them which allowed
-160
sample temperatures
-200
304 stainless
up to 75OOC.
In the experiments
with titanium
deposited
on
steel, the substrate was prepared
by electropolishing in a solution of Cr03 in ace14 tic anhydride, washing with water and rinsing
-240
in methanol system.
-280
I
I
I
remove atmospheric
1200
1800
Ti was evaporated
I
600
0
before being installed
Sputtering
in the UHV
with 1 keV Art was used to gases adosrbed
on the surface.
onto the substrate
by resistive
heating of a filament made from an alloy of 75%
Temperature FIGURE 1 Gibb's free energy vs. temperature oxides
(K> for various
Ta and 25% Ti supplied
by Uion Carbide.
thickness was measured
by a quartz crystal
ness monitor
at the same distance
tions believed were modeled stainless
and compared
to be present
steel substrates.
which
of Ti on 304
The adsorption
of
oxygen on Ti surfaces was studied as a function of the temperature
of the foil or film and the
presence of other species adsorbed
in the gas phase or
on the surface.
3. RESULTS AND DISCUSSION Initial Auger spectra of the titanium fore any cleaning tamination
by Ar ion sputtering the sample at 75O'C.
formed in a standard pressure out.
at 3 keV for 3 hcurs with After high temperature
here were per-
Varian UHV system with a gas -10 torr range after bake-
Auger spectra were collected
analyzer
with a Physi-
model lo-2346 cylinderical
mirror
(CMA) using a 3 keV incident electron
beam energy and a modulation V peak to peak on the CMA.
diffused
sput-
to the surface
from the bulk of the foil and were removed
presented
in the low 10
cal Electronics
which was removed
tering, Auger spectra showed traces of S, P and
PROCEDURE
The surface analyses
foil be-
showed carbon and oxygen con-
from the atmosphere
Cl, which had apparently 2. EXPERIMENTAL
rates
range.
to the condi-
in Macrotor,
by vacuum deposition
thick-
from the fila-
ment as the sazple, with typical deposition in the 1 to 6 A per minute
foils were determined
Film
amplitude
of 2 to 4
Gases for surface ad-
milder
sputtering
by
(1 keV for 15 min. with no an-
After these two sputter cleanings,
nealing). therewereno
impurities
detected
by AES.
This
surface was stable to oxygen and carbon contamination from the ambient
gases in the UHV chamber
for several hours.
Surface concentrations
estimated
to the following
accordinq
were
equation
1153
bation,
where C is the surface x, H is the absolute sensitivity
is averaged electrons
concentration
of species
peak height and S is the
The surface concentration
The clean, ion bombarded
reached saturation to 30 Langmuir
coverage
of oxygen
sec.), which resulted tration of 30%. resulted
in a surface oxygen concenof oxygen at 200°C
it was possible
approximately
at room temperature
k
(b)
0.4,+-
lil
to
the adsorb-
120 fi of Ti at
oxygen
produced
co
steel
a surface
introduced
into the
This surface was then heated to 375'C to
determine
if there was any oxygen desorption
the surface or dissolution measured
spectra of the film before and after heating give
into the bulk of the foil.4
which readily adsorbed
by a decrease
Auger signal.
bon was present tration),
in the intensity
of the
change was noted in
A high concentration
to render the film com-
to 02 adsorption.
'
Ti
FIGURE 2 Adsorption of Oxygen by a Ti Film (a) before and (b) after heating
However,
it was
The subsequent
exposure
not show any increase centration,
of the film to 5L O2 did
in the surface oxygen con-
indicating
that the surface carbon
noted that the presence of carbon limited the
and oxygen contamination
saturation
of oxygen that could ad-
with respect to further O2 adsorption.
After this experiment,
bon originates
concentration
sorb on the Ti surface. the substrate sputtering
surface was recovered
constitutes
passivated
a thin film of 90 A of Ti was
also at 6 !/min without
incorporation
the surface The car-
from the steel substrate where it
0.08% by weight.
Since both carbon and oxygen form binary compounds with Ti, a co-adsorption
0
Subsequently, deposited,
by Art ion
at 2.5 kV for 3 hours with PAr = 1.5 x
10-5 torr.
670' 5L02
of car-
in the film (20% surface concen-
but not enough
pletely passive
from
into the Ti film as
No significant
the Auger spectrum.
Auger
the results shown in figure 2b.
remove the adsorbed oxygen by heating
Evaporationoof
in 35
heated to 67O'C.
of the surface with about
the rate of 6 A/min onto a clean stainless
system.
onto the steel substrate
min. and was immediately
at 25'C on exposure
In both cases,
to diffuse
substrate
Ti was deposited
A 94 ! thin film of
surface
the foil to over 400°C, which enabled ed oxygen
of a
in which the Ti film was heated to oxygen.
(1 Langmuir = loo6 torr
Adsorption
in saturation
15% oxygen. completely
C,
over the escape depth of the Auger
and does not imply a percentage
monolayer.
next experiment, before exposure
of the peak to peak Auger signal as
given in ref. 15.
OXY-
gen adsorptionwasfurtherillustrated in the
I1
L
The poisoning effect of carbon for
experiment
performed with CO and O2 to elucidate tition for available
was
the compe-
Ti atoms by both adsorbates.
of carbon into the film as shown in figure 2a.
The substrate
This film was able to adsorb more oxygen at sat-
layer of Ti evaporated
uration due to the smaller
face was then exposed to a total of 5L CO and
initial carbon concen-
for these adsorptions
was a 70 "A
onto the steel.
The sur-
2OL O2 as shown in fig. 3.
the molecules
that hit the surface stick and are
dissociated
to form binary Ti compounds. At -8 298'K and PC0 = 2x10 torr, roughly a monolayer
of CO can adsorb onto a Ti surface if the sticking
probability
in 200 sec.,
is unity.
The exper-
iment is shown in figure 4, where the deposition rate of Ti is 1.2 !/min
(one monolayer
in 2-3
min., or about equal to the CO collision
rate).
Chemisorption
to the
is seen in this experiment
extent that only 4% of the surface concentration of oxygen can be adsorbed surface. observed
The remainder
and removed
from the
of the carbon and oxygen
in the Auger spectra was most probably
as mixed oxide and carbide of Ti. Ti
5L o*
13L
151
3OL
FIGURE 3 Adsorption of Oxygen by a Titanium =2x10torr at pco
500°C
film deposited
The surface was heated at the end of the exposures to determine
if there was significant
of one of the adsorbates
migration
away from the surface.
As the sticking coefficient of CO is close to 8,16 unity , a 5L exposure to CO should passivate It it is bound on the surface with-
the surface.
out dissociation
and diffusion
This data indicates sufficient
that a monolayer
to saturate
can still be adsorbed film.
Again,
of CO is not
by active Ti sites on the
heating allows carbon to accumulate from origins
This experiment
indicates
just the surface atoms contribute
in the sub-
that more than to the getter-
ing ability of the Ti films. A measurement gettering
collision
of the rate of Ti removal from
can be obtained
the substrate
by evaporating
Ti onto
at a rate that is less than the
rate of a reactive gas such as CO.
calculation
Ti lLC0
5L 5L02 1OL
the film and that oxygen
in the film, presumably strate.
into the film.
A
of the rate of reaction of surface
Ti atoms with an active gas species the kinetic theory of gases assuming
is given by that all of
FIGURE 4 Coadsorption of Oxygen and CO on a Titanium film. Oxygen is adsorbed when the surface has a monolayer coverage of CO.
An important question with respect to the tokamak operation titanium
is what effect hydrogen
deposition.
where Ti was deposited hydrogen of 10S6 torr.
An experiment
has on
was performed
at a partial pressure
of
Under these conditions,
the rate of Ti deposition
is much less than the
rate of hydrogen
striking
the surface, which
should encourage
the formation
dride.
of titanium hy-
There was no effect of the hydrogen on
1155
J.R. Elliott et al. j The surface chemistry of titanium gettering
the oxygen adsorption ability of the Ti film,
REFERENCES
4. CONCLUSION
1. L. Keller et al, Symposium on Energy Removal and Particle Control in Toroidal Fusion Devices, Princeton, July 26-29, 1983.
We have shown that stainless steel substrates
2. H.E. Bishop, J.C. Riviere and J.P. Coad, Surface Sci. 24 (1971) 1.
for Ti deposition are not inert as compared to pure Ti, and can have a deleterious the gettering
The carbon dissolved higher chemical
in stainless
potential
Ti film.
steel is at a
than when combined
with Ti, thus the reaction ed.
effect on
capacity of an evaporated
forming TiC is favor-
steel, may diffuse
to
We have also shown that carbon originating
gettering oxygen.
8. E. Bertel, R. Stockbauer and T.E. Madey, J. Vat. Sci. Technol. Al (1983) 1075.
the
ability of the Ti film with respect to Gases containing
Solid State Cotinn.10 (1972) 933.
7. J.S. Solomon and W.L. Baun, Surface Sci. 51 (1975) 228.
sorption.
gases in the system effects
Sur-
6. T. Smith, Surface Sci. 38 (1973) 292.
the Ti film surface and poison it to oxygen ad-
from background
Bignolas, M. Bujor and J. Bardolle, 4. J.B. face Sci. 108 (1981) L453. 5. D.E. Eastman,
Carbon, which is present at a concentration
of .08% in 304 stainless
3. N.R. Armstrong and R.K. Quinn, Surface Sci. 67 (1977) 451.
carbon can passivate
9. P.H. Dawson, Surface Sci. 65 (1977) 41.
In the case of CO, this is observed -8 torr. These exwith a partial pressure of 10
10. L. Oren and R.J. Taylor, Nucl. Fusion 176 (1977) 1143.
periments
11. L. Keller et al., J. Nucl. Mater. 493.
Ti surfaces.
duction,
demonstrate
that TiO is stable to re-
that TiC is stable to further oxidation,
and that these species are passive on the surface. For Ti to be used as a getter, continuously dissolving
to
12. H.F. Dylla, 4th Intl. Conf. on Plasma Surface Interactions in Controlled Fusion Devices (1980).
provide a fresh surface, either by
carbon and oxygen
heating or by continuously substrate
it is necessary
111 (1982)
surfaces.
intopurebulk
evaporating
Ti by
13. C.H.P. Lupis, Chemical Thermodynamics erials (Elsevier, 1983).
of Mat-
Ti onto 14. R.O. Adams, J. Vat. Sci. Technol. Al (1983)lZ. 15. L.E. Davis et al., Handbook of Auger Electron Spectroscopy (Physical Electronics Industries, 1976). 16. S.R. Morrison, The Chemical Physics of Surfaces (Plenum Press, 1977) pg. 259.