Solid State Communications,
Vol. 95, No. 10, pp. 685-690, 1995 Elsevier Science Ltd Printed in Great Britain
0038-1098195 $9.5Ot.O0
0038-1098(95)00341-x PROJECTION
OF PLANEWAVE
CALCULATIONS
Daniel Sanchez-Portal, Instituto
Nicolb
Cabrera
Emilio Artacho,
and Departamento
Universidad
Autonoma
INTO ATOMIC and Jose M. Soler
de Ffsica de la Materia
de Madrid,
ORBITALS
28049 Madrid,
Condensada,
C-III
Spain.
(Received 24 April 1995; accepted 9 May 1995 by F. Yndurain) The projection
of the eigenfunctions
electronic-structure
calculations
practical
link between
orbitals.
Given a candidate
the plane-wave associated analysis
plane-wave
basis sets is proposed
(ii) it is optimized
hamiltonian
procedures
first-principle as a forma1 and
based on plane waves and the ones based on atomic by maximizing
by its projection
that projection,
and energy bands are obtained,
in a natural
tight-binding
in standard
atomic basis, (i) its quality is evaluated
eigenfunctions,
tight-binding
trial-and-error obtain
the methods
is performed
obtained
into atomic-orbital
way. The proposed
of finding appropriate
hamiltonians.
method
into
(iii) the
and (iv) population
replaces
the traditional
atomic bases and the fitting of bands to
Test calculations
of some zincblende
semiconductors
are presented. Keywords:
D. electronic
Plane waves and atomic orbitals used methods of them paper
for electronic
showing
proposes
method
band structure,
A. semiconductors
provide two widely
much better
structure
advantages
calculations,
and disadvantages.
a way to use the advantages
to complement
each
wavefunctions.
This
experienced
of each
the other.
scales linearly
with system
scheme’
etc., through
large number of systems tron densities,
and energy bands.
properties
giving accurate
total energies,
is the flexibility,
state
results for elec-
and accuracy
them.
and this greatly
facilitates
the calculation
how-
ever, makes the PW basis inefficient,
requiring
a rel-
large basis size for a given accuracy.
tion, plane waves require periodic
boundary
When
(molecules,
defects)
the system
is not periodic
such a periodicity
by the use of supercells,
what further
hand,
methods
based
are
matter
is based on mentioned
are affected by the
of the completeness and This task is much worse
cutoff, and usually ends up in a very cumbersome non systematic
surfaces,
trial-and-error
and
procedure.
Thus, due to the difficulties and ambiguities of the LCAO basis construction and their less well controlled
artificially the inef-
completeness, they are frequently considered more approximate than plane waves, and they have been tradi-
on the linear
tionally used in less accurate tight-binding type of calculations. However, once a well optimized LCAO basis has been obtained, there is no reason why highly ac-
ficiency of the basis. On the other
These quantities
defined than in the case of plane waves since there are many more parameters than just a plane-wave energy
In addi-
increases
like atomic
They provide a deep physical insight.
basis: since the results of calculations
conditions.
must be imposed
analysis.’
election of the basis, a testing quality of the basis is critical.
of
everywhere,
atively
magnitudes
bond charge, charge transfer,
above is the greater difficulty in the choice of the LCAO
the energy of atomic
atomic forces. Being equally complete
effort
Local bases also of-
The price to be paid for the advantages
of the plane-
and universal com-
pleteness controlled by a single parameter, cut-off. It is a floating basis, independent
size.
system since most of the chemical language
The origin of its wide applicability simplicity,
population
because of their suitabil-
essential for the chemical analysis of a condensed
atomic forces, geometries,
wave basis set: it has a homogeneous
positions,
of a
or Bloch
in which computational
way of quantifying
charge, orbital population,
the molecular
LCAO bases have recently
a renewed interest methods4
fer a natural
the ground
In addition,
ity for order-N
On one hand, plane waves (PW), in addition to ab initio pseudopotentials’ provide a very successful to calculate
suited to represent
combination of atomic orbitals (LCAO) are far more efficient in terms of basis size, since atomic orbitals are 685
686
PROJKTION
curate
ab initio
calculations
it6 This rises the question
OF PLANE-WAVE
cannot
be performed
of whether
plane-wave
lations
can be used to find an optimal
LCAO
basis,
situations
orbitals
in molecules
constitute
and
bases
are
more
onal
or near-optimal
ones,
they
solids.
computational
non-orthogonal Even
this
kind
than
orthog-
have
to be more
sets
methods.‘!’
are
schemes
transferable
used
energies
in atoms,
(ii) the optimization experiments trast,
this
methods calculation basis. tool
and
calculations3~”
the eigenstates
LCAO
and (iii) analyze electronic
of population
within
for electron
pseudopotentials proximations
exchange
the expansion
not essential
energy
ject of a future
calculations
cutoff.
using
These ap-
wave funcin this paper
to be converged
The explicit
for the system of interest,
for the projection,
eigenstates
S measures states
the quality
tified by its ability
of an atomic
to represent
those
falls outside
basis.
For that
basis is quan-
eigenstates,
how much of the subspace
eigenstates
I&(k))
i.e.,
of the Hamil-
the subspace
spanned
we define the spilling’5
ca
k
the projection. reproduce that
I&,(k))
Nk and N, the Brillouin
are the PW are the number
calculated
eigenstates,
of calculated
zone and the number
k points
precisely,
The spilling that
the PW eigenfunctions
0 and 1.
wave-functions
exactly.
S = 1 means eigen-
states. above,
LCAO
the quality
set of Hamiltonian
basis will reproduce
the different
eigenstates
of eigenstates
relevant
the particular chemical
the occupied
to be considered.
requires
to the
basis
sets,
electronic
a larger atomic
way. Given
Slater-type
orbitals,
parameters, Taking
evaluations
a type of atomic
computational
tual PW calculation,
in in a
functions that
the prob-
minimizing
Note that
S as a
the minimiza-
of S for different
effort
selection
orbitals)
(say exponents)
that the evaluation
the
basis.
optimization
but for a single first-principles
into account
should
presented
Gaussian-type
of those parameters.
or opti-
and possible
this work allows for their systematic straightforward
density,
are the ones states
methodology
on
properties
As shown later,
analysis the
choice
of S depends
excitations
in the projection.
case typically
accuracy
The
eigenstates
For quasiparticle
In addition
(say
An
some of the lowest empty
be also included
of atomic
eigenstates.
For ground-state
(total energy, geometry,
analysis)
but
of a Hamiltonian. to the definition
ba-
system,
with very different
application.
of the system
of an LCAO
not only for a particular
the basis becomes
in
for
to the Hamiltonian
lem of optimizing
of bands considered,
of
considered
projected
by
and
eigen-
the average
S varies between
pa-
(1)
(4)
into the atomic-basis
it gives
the LCAO
the basis is orthogonal
a minimal where
= 6,“.
parameters
o=l
that satisfy
1I(1 - P) I& (k)) II2 over the eigenstates
function
y+-$&bn(k)l(l - P(k))lti,(k))
basis,
between the plane-wave
and their projection More
tion requires
S=
basis, and the vectors
depend on certain
S
(3)
= (d,(k)lY(k))
the difference
P(k)/&(k)).
and
to be considered
(4,0%44)
of the atomic
(Y‘(k)l&(k))
latter
study.
given the set of Hamiltonian
w
are the dual of the atomic
cal properties,
consideration
of the PW basis will be the sub-
Given the PW results
rameter
I&(k))
also for a particular
to the method.
of the one-particle
the PW reference
the atomic
calculations
and correlation,13
I~,(k))S;,‘(k)(~y(k)I,
= c
=
is the overlap matrix
sis is evaluated
approximation
The theory presented
of the uncompleteness
tonian
by means
by others at will, the only key fac-
tions in plane waves.
by measuring
density
that replace core electrons.14
are, however,
in plane-wave
plane-wave
the local
They can be replaced
considers
S,,(k)
As mentioned
In this work the reference
tor being
and Hamil-
structures
the
and defined as usual for non-
l&(k))(@‘(k)l
it
S = 0 means
analytical
and optimize
bands
into
k, gener-
(2)
analysis.”
are performed (LDA)
by the atomic
and practical
to (i) characterize
(ii) obtain
In con-
and LCAO
of a plane-wave
space spanned
an efficient
is applied
basis sets,
= c
local
with
into the Hilbert
which
tonians,
molecules,
work links the plane-wave
This provides
atomic
LCAO
or solids,”
by projecting
P(k)
(i) the minimization
of energy bands as compared
or with plane-wave
the present
basis,
operator
of wave vector
basis,’
for non-
throughout
to optimize
bases are based on two procedures: of total
is the projector functions
where
Non-orthogonalized
therefore
proposed
orthogonal
Vol. 95, No. 10
of
work.’ Most
P(k)
of Bloch
and to have a shorter
being thus more adequate
LCAO
basis
basis sets
though
range of interactions, parametrized
respectively. subspace
ORBITALS
effort.
to handle
shown
INTO ATOMIC
ated by the atomic
cumbersome
and less environment-dependent,
atomic
with calcu-
which can then be used in more complex
while keeping a feasible
Atomic
CALCULATIONS
values of the calculation.
of S represents
compared
with the ac-
it is obvious that this optimization
procedure
is much more convenient
and-error
procedures
than the direct trial-
using self-consitent
LCAO
codes.
PROJECTION
Vol. 95, No. 10
Using this procedure atic study comparing
we have performed
different
in different
solids.
elsewhere.16
In that analysis
properties
(spilling,
OF PLANE-WAVE
This
CALCULATIONS
stressed that the proposed
a system-
kinds of atomic
will be presented
tonian matrix elements
orbitals in detail
rameters
it is found that for many
charge density and populations,
INTO ATOMIC ORBITALS
en-
matrix
in Bloch space. By construction, tion of the matrix
take the eigenfunctions
of the
up to infinite
free atoms using the same basic approximations
as for
ture of our method
and scale them
elements
neighbors.
between
terms of its associated
band structure:
separates
atomic
is, d/(r)
from the effect of neglecting
ing Ni(Xi) the normalization factors are determined the orbitals orbitals
= Nl(&)$ptO”‘(Xlr),
factor.
The optimum
by minimization
compress
bescale
of S. Typically
which are empty in the atomic calculation
compress
substantially.
These optimized
orbitals
some scope of neighbors.
that
suitability tonians energy
utility
of the projection
for obtaining
and analyzing
technique
mixed together
LCAO Hamil-
(tight-binding parameters) and their associated bands. l1 The matrix elements of the projected
ments
space Hamiltonian,
(5)
using fast Fourier transform
and other techniques
algorit,hms
to a sufficient
G)(k + GIHPwI&(k))
lattice
calculation,
vectors
is an
number
the number
of the atomic basis.
of k points,
of points
depends
(7) on the over-
taking into account on the real space
I7 For silicon and the STOare important
up to
and a few tens of k points have
proven to be enough. In Figure 1 (a) and (b) we present the energy bands of silicon for an sp minimal
basis and for an spd basis,
a
respectively,
with interactions
It has to be
as obtained
from the projection.
to guarantee
ele-
an inverse Bloch trans-
4G basis used below, interactions
of the one used in the PW
that must be large enough
reliable representation
and E,,,
matrix
from the reciprocal-
factors which depend
range of the interactions.
(6)
cut-off independent
sep-
for clarity. The sum has to be extended
third nearest neighbours
where G are reciprocal
Hamiltonian
= ~~;,CAO(k)e’k(R+)
where normalization
that
energy
With
k
laps are omitted
of the PW method:
HLCAo(k) = ~(&Jk)lk+ I1” 1k+G12<.%..
ways of
can be analyzed
parameters) we perform
w
can be obtained
in the traditional
the real-space
(tight-binding
ffLcAo(~J = ($,(k)IHPWl&(k))
of error
formation
Hamiltonian H;:“‘(k)
beyond
two sources
each approximation
To obtain is its
These
of the basis
elements
arately.
ones used in the following, except stated otherwise. A further
it conveniently
choosing atomic orbitals from their LCAO bands. our procedure
are the
matrix
fea-
of a basis in
the effect of the uncompleteness
are usually
by a small amount except for the
directly
localized functions
for the characterization
XI (one scale factor per different
that
is obtained
it includes the informa-
This is a very interesting
down by scale factors orbital),
the Hamilno free pa-
being fitted.
results
the solid (LDA, same pseudopotential’4)
obtains
from first-principles,
The LCAO Hamiltonian
ergy bands) the type of atomic orbitals that gives better is the following:
procedure
687
FIG. 1. Electronic band st,ructure of silicon calculated projecting the plane-wave LDA Hamiltonian into an sp atomic basis (a), and into an spd atomic basis (b), both shown in solid lines. Dotted lines show the plane-wave LDA band structure. The basis functions are obtained as discussed in the text.
up to infinite
neighbors,
They are compared
688
PROJECTION
OF PLANE-WAVE
with the PW energy bands, that were calculated well converged
plane-wave
was generated orbital
basis set.
and optimized
being obtained
the silicon atom.
in Eq.
with a
configuration
of the
1) is S = 0.0076 and
S = 0.0007 for the sp and spd basis, respectively. the sp basis reproduces
figure shows that band
much better
giving a rather
than
tended.
orbitals
substantially
both
the latter.
a reduction
FIG. 2. Effect of different contractions of an sp atomic basis in the silicon band structure. Solid lines are for optimum scale factors and dotted lines for a further contraction of the basis functions of a 1.2 factor. The basis functions are obtained as discussed in the text.
ex-
of their extension
Figure 2 shows the effects of a contraction The energy
of the basis. a tendency
to establish
to the expected increase
The
improves
used above are relatively
For some purposes
is desirable.
bands,
of the band gap.
the valence band and the band gap, especially The atomic
The
the valence
the lowest conduction
poor description
of the d orbitals
inclusion
of the X point rises, showing a direct band gap, in addition
narrowing
of the bands and the overall
of the gap. The shape and the ordering
conduction
bands is very sensitive
the basis.
See for example
the s and p conduction scale factor.
the change
states
S = 0.0292 for the optimum
the result of infinite neighbors.
of the
to the contraction in ordering
of
the atomic basis obtained
of
of the atom usually tions.
at r with the change in
The charge spillings
and the contracted
the bands
basis,
ted lines in Fig. the energy bands
an overlocalization be interesting
of the atomic orbitals,
if matrix
a range are wanted
elements
basis”
with interactions
ond (b), and third
(c) nearest
from the diagonalization trix obtained
the plane-wave
this can still
Notice that
beyond
correctly
The effect of this
in Eq.
for an STO-4G
5, and they are compared
the range
for the ST0
results,
shown as dotted
the optimized
basis used for Figure
with standard
minimal
basis used in Fig.
ma-
culations
with
chosen compromising
larger than for the
1 (a) (S = 0.0076).
the extension
In LCAO cal-
of the atomic orbitals between
the quality
has to be
required
g0 w. -5 -10
X
l-L
1 (a)
sp basis sets like
5
r
with
band gap, which is not usu-
10
L
basis,
lines in Fig. 1.
15
-15
of
basis (dot-
3) is worse than for the other
4G basis is S = 0.0513, considerably
They result
of the LCAO Hamiltonian
reduces
However, the quality
the one used in Fig. 3. The charge spilling of the STO-
up to first (a), sec-
neighbors.
a longer range of interacorbitals
neighbors)
gives an indirect
ally obtained
is shown in Figure 3, where the
bands for silicon are presented
sp minimal
that
showed with solid lines in Fig. 1 (a), as compared
worse with
for neighbors
to be negligible.
kind of approximation energy
become
require
interactions.
(infinite
We have observed
from the scaled eigenfunctions
The use of STO-4G
of non-negligible
are S = 0.0076 and
respectively. Even though
Vol. 95, No. 10
above, the d
as explained
from an excited
states
INTO ATOMIC ORBITALS
The atomic basis
The spilling of charge (considering
sum over occupied
CALCULATIONS
l-
X
rL
r
FIG. 3. Band structure of silicon as a function of the range of non-neglected interactions: interactions up to first (a), second (b), and third (c) nearest neighbors. In dotted lines the result for infinite neighbors is shown as reference (in (c) they are hardly distinguishible from the solid lines). The atomic basis functions are standard STO-4G taken from Ref. 10.
X
r
for
Vol. 95, No. 10
PROJBCMON
the band-structure
and valence properties,
sibility
of neglecting
matrix
OF PLANE-WAVE
elements
The choice of basis depends
CALCULATIONS
and the pos-
beyond
a range.
on the particular
applica-
tion. Finally, we show the utility of the projection nique for the analysis
by means of LCAO population proposed
by Mulliken5
occupied
eigenstates
basis.
tech-
of the results of PW calculations analysis.
We use the one
The analysis is performed
projected
of the
It has to be done with care since the projected
eigenstates
[x0(k)) = P(k)l$,(k))
(the deviation charge
is related
spilled in the projection15).
tion of their associated is necessary to ensure ulation
analisys.
density
operator
where
are not orthonormal
from orthonormality
Proper
S
QC
&A
69
BN
3,~
0.0022
2.19 (2.14)
5.81 (5.86)
0.81 (0.86)
BP
S,P
0.0038
3.51 (3.34)
4.49 (4.66)
-.51 (-.34)
considera-
AlP
s,p
0.0035
2.15 (2.20)
5.85 (5.80)
0.85 (0.80)
SIC
s,p
0.0071
2.30 (2.19)
5.70 (5.81)
1.70 (1.81)
by defining
the
GaAs
s,p
0.0041
2.58
5.42
0.42
s,p,d
0.0010
2.78 (2.88)
5.22 (5.12)
0.22 (0.12)
as
Ix”(k)) = CpRii(k)lxp(k))
represent
tors of the dual set of the projected LCAO density
Basis
with the
overlap &p(k) = (xo(k)lxP(k)) charge conservation in the pop-
This is accomplished
matrix
the vec-
the charge associated
jection of the eigenstates
in terms
of the
into the space spanned
(Vlild”) 7
to an orbital
(9)
(iii) to obtain tight-binding
(10)
zincblende
to perform equivalent
selfconsistent agreement.
are straight-
than the previous methods
tasks. The main idea of this paper
could also be used for the improvement
for different
They are compared
LCAO calculations The basis functions
lation analysis
and (iv) to per-
The procedures
This possibility
of first-principles
is presently
being explored.
are shown in Table I, where
are calculated
materials.
from PW calculations
parameters,
analysis.
forward and more systematic
algorithms. charge transfers
obtained
by an LCAO basis can be use-
ful for multiple purposes: (i) to evaluate and optimize LCAO basis sets, (ii) to analyze LCAO band structures, form population
p then being
Q, = c P,Ar. Y Results of this procedure
it has been shown how the simple pro-
The
dual LCAO basis: P,” =
In summary,
eigenstates.
is then written
689
TABLE I. Calculated charge transfer for some zincblende semiconductors. Qo and QA stand for the valence charge on the cation and the anion, respectively, aQ for the charge transfer with respect to neutral atoms, and S for the spilling. Numbers in parenthesis were obtained from Hartree-Fock LCAO calculations,‘s except for GaAs, for which LDA LCAO was used.”
on the
into the subspace
INTO ATOMIC ORBITALS
heteropolar Acknowledgments
with results of
- We acknowledge
useful discus-
showing a remarkable
sions with F. Ynduriin.
used for these
sions with S. G. Louie. This work has been supported
are the scaled atomic orbitals
popu-
discussed
above, which showed to be best suited for the purpose.
the Direction
E. A. also acknowledges
General de Investigation
nologica of Spain (DGICYT)
Cientifica
discusby
y Tec-
under grant PB92-0169.
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4409
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690
PROJHCI’ION
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OF PLANB-WAVE
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of the total
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the occupied
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INTO ATOMIC 0RBITAI.S
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