Properties of silicon implanted with boron ions through thermal silicon dioxide

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MICROELECTRONICS

Don't get burned! Watch the heat w h e n testing IC voltage regulators, or your results m a y not match the manufacturer's specifications. E HNATEK a n d L GOLDSTEIN Electron Des 5, 1 M a r c h (1973), p 72 W h a t y o u have p r o b a b l y forgotten is that a m a n u f a c t u r e r uses a u t o m a t i c test e q u i p m e n t to keep his costs d o w n Since a u t o m a t i c e q u i p m e n t can test a regulator in less t h a n a second, t h e r e ' s httle h e a t i n g of t h e device d u r i n g t h e test s e q u e n c e M a n u f a c t u r e r s therefore specify m o s t p a r a m e t e r s at c o n s t a n t - j u n c t i o n t e m p e r a t u r e , while t e m p e r a t u r e drift is specified separately A device user, however, s h o u l d realize t h a t d u r i n g his b e n c h t e s t s - - a n d in actual a p p h c a t l o n - - a regulator will s e l d o m be operated at a c o n s t a n t - j u n c t i o n t e m p e r a t u r e A n d , u n f o r t u n a t e l y , line a n d load regulation are t e m p e r a t u r e - d e p e n d e n t p a r a m e t e r s

MOS subsystems prise open the v.d.u, market. D McGRENERA Electron Engng, J a n u a r y (1973), p 44 T h e d e v e l o p m e n t of M O S I C s has resulted in a d r a m a t i c r e d u c t i o n in t h e price of visual display units T h i s t r e n d will u n d o u b t e d l y continue, m a k i n g possible t h e replacem e n t of t h e teleprinter w i t h a low-cost v d u equivalent, a n d of inexpensive, "Intelligent" t e r m i n a l s

MOS chip plus level-shifting circuit drives gasdischarge display. J Y LEE a n d ED LORD Electromcs, 1 M a r c h (1973), p 97 T h e low-voltage o u t p u t of M O S

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RELIABILITY

calculator chips can be m a d e to trigger a high-voltage display if t h e interface circuit is already m a i n t a i n i n g t h e display electrodes near t h e potential necessary to fire them

Enhancing an LSI computer to handle d e c i m a l data. J P MURPHY, W CHAN a n d R GREINER Electromcs, 1 M a r c h (1973), p 77 A m e d m m - s c a l e processor has b e e n s q u e e z e d on to an 8 x 1 l - i n pc board by a d d i n g to an existing successful s y s t e m two newly designed large-scale I C chips that have decimal a n d b y t e - s t r i n g capability

Use current-mode IC amplifiers. T

M FREDERIKSEN, W M HOWARD a n d R S SLEETH Electron. Des. 2, 18 J a n u a r y (1973), p 48 Because conventional operatlonal amplifiers n e e d a dual p o w e r s u p p l y (typically ± 1 5 V) this often poses a p r o b l e m for s y s t e m designers M a n y s y s t e m s are d e s i g n e d to operate f r o m a single p o w e r s u p p l y voltage If an op a m p Is u s e d with t h e single supply, limited o u t p u t voltage swings a n d u n w a n t e d c o m m o n - m o d e offsets will p r o b a b l y result I n addition o t h e r i m p o r t a n t p e r f o r m a n c e characteristics m a y be d e g r a d e d O n e solution to these p r o b l e m s is p r o v i d e d by a n e w type of IC amplifier w h i c h h a s a c u r r e n t - m o d e i n p u t stage a n d can provide characteristics similar to those of conventional op a m p s while operating f r o m a single p o w e r s u p p l y line

7. S E M I C O N D U C T O R I N T E G R A T E D CIRCUITS, DEVICES A N D M A T E R I A L S Physical properties of semiconductor industry chlorosilanes. M A DREWS, W L SCHENCK, J r , D SMITH, J WALKER a n d C L YAWS Sohd S t Technol, J a n u a r y (1973), p 39 P e r t i n e n t physical p r o -

a n u n d e c o d e d chap can be increased f r o m 128 bit for the M N O S - F E T to 256 bit for t h e M N O S avalanche diode

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perties are p r e s e n t e d for t h e chlorosllanes h a v i n g m a j o r i m p a c t in t h e s e m i c o n d u c t o r i n d u s t r y Polycrystalhne a n d single crystal electronic grade silicon are involved T h e data includes critical properties, v a p o r pressure, h e a t of vaporization, heat capacity, density, viscosity, s u r f a c e t e n s i o n a n d t h e r m a l conductivity for t h e tetra-, tri-, dl- a n d m o n o c h l o l o derivatives T h e c o m p r e h e n s i v e properties are given in concise graphical a n d text f o r m a t s for rapid u s e in research, d e v e l o p m e n t a n d m a n u f a c t u r i n g activities

The MNOS-LAD (metal-nitride-oxide-silicon aval a n c h e diode)--a n e w semiconductor storage e l e m e n t . L PASCH Nachrichtentech Elektron 23, N o 2 (1973), p 73 (In G e r m a n ) Possibilities of c o m b i n a t i o n o f storing M N O S s t r u c t u r e s by m e a n s of active bipolar e l e m e n t s are investigated, in order to design M N O S s t o r a g e e l e m e n t s w h i c h m a k e possible h i g h e r w o r k i n g s p e e d s t h a n M N O S - F E T e l e m e n t s a n d can better be integrated A s a result, a n e w storage e l e m e n t called M N O S avalanche diode is presented, for w h o s e integration possibilities are s h o w n T h i s diode is suited for u s e s in R A M s a n d R M M s and, c o m p a r e d w i t h t h e M N O S F E T m e m o r y , enables t h e t i m e of r e a d i n g cycle to be i m p r o v e d by at least one order T h e storage capacity in

Properties of silicon implanted with boron ions through thermal silicon dioxide. L 0 BAUER, M

R MACPHERSON, A T

ROBINSON a n d H G DILL

Solid S t Electron 16 (1973), p 289 T h e properties of silicon i m p l a n t e d with b o r o n Ions t h r o u g h t h e r m a l S102 films were s t u d i e d u s i n g s h e e t resistivity m e a s u r e m e n t s (corroborated by Hall data) Electrical properties for i m p l a n t s t h r o u g h 0 1 vim of S102, as c o m p a r e d to bare slhcon, s h o w e d n o u n u s u a l behavior as a f u n c t i o n of anneal t e m p e r a t u r e . S h e e t resistivity m e a s u r e m e n t s as a f u n c t i o n of SIO2 thickness for fixed 1on energy, a n d as a f u n c t i o n of energy for fixed oxide thickness, v, ere m a d e after 525 a n d 925°C anneals, for b o r o n doses of 1013, 1014 a n d 1015 l o n s / c m 2 T h e profile of b o r o n ions in SiO2 is n e a r G a u s s l a n for t h e energy range Investigated a n d t h e s t o p p i n g p o w e r Is 0 - 2 0 per cent lower t h a n t h e theoretical value c u r r e n t l y in the literature C o n s i d e r a t i o n s for device m a n u f a c t u r e are d i s c u s s e d in t h e light of t h e results

The electrical properties of anodically grown silicon dioxide films. J D E BEYNON, G G BLOODWORTHa n d I M McLEOD S o h d S t . Electron. 16 (1973), p 309 A n electrochemical t e c h n i q u e h a s b e e n u s e d to grow anodlc silicon dioxide films of thxcknessess b e t w e e n 80 A a n d 1100 A on n - t y p e silicon T h e pro-