- Email: [email protected]
Quality assurance of electronic components in defence
World Abstracts on Microelectronics and Reliability units evolve organic vapors; the evolutions can give rise to insulating o r p h i c filmR on catalytically active contact materials such as platinum group metals. A variety of expm-imantal methods have been used to determine the extent and (in some cues) identity of these vapors;- these methods are criticized.and a standard procedure is out]~ed and applied in the comparison of over twenty classes of plastic material. Even the best materials can represent some hazard to platinum group metal contacts, so that a careful selection of plastic materials is necessary together with other steps to improve relay reliability. Charnctedntinm of Localized defec~ hi dleleeterlefil~u for elec~m devlees. W. KmtN. Solid St. Techol. 35 (Mar. 1974); 78 (Apr. 1974). Capabilities and limitations of various types of analytical methods for detecting and characterizing localized imperfections in typical dielectric films used in present.day silicon semiconductor device technology are surveyed and compared. Dielectrics and insulators of particular interest include thermally grown silicon dioxide and layers of vapor deposited silicon dioxide, silicate glasses, silicon nitride, aluminum oxide, aad complex silicates in thicknesses ranging from several hundred angstroms to several micrometers.. The analytical methods discussed in some detail include optical contrast microscopy, scanning electron microscopy, selfhealing dielectric breakdown, selective chemical etching, electrolytic decoration, Liquid crYStal techniques, electron-prohe microanalysis, and ion :microprobe mass analysis. Several additional methods are briefly noted, Particular emphasis is placed on recent improvements achieved in these analytical methods. Applications are discussed and illustrated with typical examples,: and trends in future developments are indicated. Quality mma'aaee of deetreni¢ ¢ompmea~ ia dofenee. B. andP. K. RAo. The QR J. find/a) 1, 75 (May 1974). In this paper an endeavour has been made to bring out how the activities of an independent certification authority, structured to the needs of the industry, can complement and supplement the quality assurance programmes of a firm at each stage of production. B ~
*Eleetrem beam mlereanalysis of electrechemleal attack on t l ~ film ulchel-chremium resistors (Technical rept,) J. J. BART. Rome Air Development Center (Oft. 1973). RADCTR-73-220. The purpose of the report is to present the results of the electron beam microanalysis (EBM) studies which have led to the development of a model for the observed electrochemical reaction. The intent was to correlate, principally through use of an electron microprobe, the various chemical characteristics of the integrated circuit with the behavior of thin film nickel-chromium resistors. Other pertinent features of the devices were studied with several additional techniques including scanning electron microscopy and mass spectrometry. FE'rs as mmlog switeh~_ S. GIgI~S. Microelectron. & ReUab. 12, 421 (1973). The paper deals with behavior of junction FET, PMOS FET and CMOS FET switches and associated driver circuits. Topics discussed include device performance tradeotfs for On and Off switch states; solutions to specific load problems; and selection of drivers for various circuit functions.
443
knidlatlm trot md ~ of m a v e r ~ 4le4m fur the Project SymlPhmie eatcilite. H. G. WAOI~t~NN,A. SPin,clams and D. B x v , ~ o . Microelectron. & Reflab. 12, 467 (1974). As a result of the general irradiation test for the electronic components of the Project Symphonie satellite one out of ten specimens of the ~ voltage diode USR-12 suffered catastrophic failure. As a ¢omeqttmoe a preselectinn irradiation procedure with subsequent heat treatment was performed in order to reveal maverick behaviour of individual specimens within the qualification lot. A pretest proved 10s rad~ (e°Co) as preselection dose and 1 hr at 110°C as heat treatment condition convenient to carry out the preselection procedure and to decide on anormal reverse current behaviour. By means of statistical considerations four specimens were ruled out of the qualification lot of 78 devices. For application means an order of precedence could be established. A new simplified methed to m c u u e meistwe in mlere eadum'es. S. ZATZ. Proc. IEEE 1974 24th Electron. Compon. Conf. Washington, D.C. 13-15 May 29 (1974). A new technique has been perfected to accurately measure the moisture content in the small volumes typified by semiconductor and integrated circuit packages. The methodology uses an inexpensive, easily fabricated moisture monitor that incorporates two bond wires in a standard package. After package seal as part of a production seal run, the dew point can be directly and accurately measured. A recognized direct relationship exists between dew points and moisture content. Comparison with other techniques and life tests of moisture sensitive parts have demonstrated the validity and effectiveness of this approach. The new technique eliminates the gross errors that are introduced when the micro-volume is drawn into a large volume test manifold. This technique is currently being used to certify the process controls and seal effectiveness of critical integrated circuits for a high reliability system. *RdlaWaley or h~, ~ ~ ~ (~ua] rept. No. 2). T. B. RAMACHANDttA~and J. L. HeATON. ECOM-0101-72-2. (Microwave Assoc.) (Nov. 1973). The interim report describes the results of a continuing program of investigation concerning the reliabilityand ~ile~-e modes of gallium arsenide Gunn and IMPATT diodes, and silicon IMPATI" diodes. Data is presented concernin~ the burn-out distribution in time of Gunn diodes. Also, the changes in d.c. and RF parameters of 700 Gunn and 100 gallium arsenide IMPATr diodes resulting from 24 to 168 hr of d.c. high temperature burn-in are present. The as~macat d eenm~or reUal~lty. R. T. LOVeLOCK. Microelectron. & Reliab. 12, 475 (1973). The simple " U " curve concept used to express the MTTF of components as a means of estimating the MTBF of equipment is based upon a numhex of simplifying assumptions which are often forgotten when applying the simple rules which result. While the simple rules adopted are sutficiently accurate to give a good working value for many components, they are unrealistic when applied 'to connectors. Those features in which a.connector falls to approximate to the simple model normall~ adopted are ccmsidered, and their effects on connector reliability noted. The operating conditions of connectors are grouped and analysed. From these considerations
*Eleetrem beam mlereanalysis of electrechemleal attack on t l ~ film ulchel-chremium resistors (Technical rept,) J. J. BART. Rome Air Development Center (Oft. 1973). RADCTR-73-220. The purpose of the report is to present the results of the electron beam microanalysis (EBM) studies which have led to the development of a model for the observed electrochemical reaction. The intent was to correlate, principally through use of an electron microprobe, the various chemical characteristics of the integrated circuit with the behavior of thin film nickel-chromium resistors. Other pertinent features of the devices were studied with several additional techniques including scanning electron microscopy and mass spectrometry. FE'rs as mmlog switeh~_ S. GIgI~S. Microelectron. & ReUab. 12, 421 (1973). The paper deals with behavior of junction FET, PMOS FET and CMOS FET switches and associated driver circuits. Topics discussed include device performance tradeotfs for On and Off switch states; solutions to specific load problems; and selection of drivers for various circuit functions.
443
knidlatlm trot md ~ of m a v e r ~ 4le4m fur the Project SymlPhmie eatcilite. H. G. WAOI~t~NN,A. SPin,clams and D. B x v , ~ o . Microelectron. & Reflab. 12, 467 (1974). As a result of the general irradiation test for the electronic components of the Project Symphonie satellite one out of ten specimens of the ~ voltage diode USR-12 suffered catastrophic failure. As a ¢omeqttmoe a preselectinn irradiation procedure with subsequent heat treatment was performed in order to reveal maverick behaviour of individual specimens within the qualification lot. A pretest proved 10s rad~ (e°Co) as preselection dose and 1 hr at 110°C as heat treatment condition convenient to carry out the preselection procedure and to decide on anormal reverse current behaviour. By means of statistical considerations four specimens were ruled out of the qualification lot of 78 devices. For application means an order of precedence could be established. A new simplified methed to m c u u e meistwe in mlere eadum'es. S. ZATZ. Proc. IEEE 1974 24th Electron. Compon. Conf. Washington, D.C. 13-15 May 29 (1974). A new technique has been perfected to accurately measure the moisture content in the small volumes typified by semiconductor and integrated circuit packages. The methodology uses an inexpensive, easily fabricated moisture monitor that incorporates two bond wires in a standard package. After package seal as part of a production seal run, the dew point can be directly and accurately measured. A recognized direct relationship exists between dew points and moisture content. Comparison with other techniques and life tests of moisture sensitive parts have demonstrated the validity and effectiveness of this approach. The new technique eliminates the gross errors that are introduced when the micro-volume is drawn into a large volume test manifold. This technique is currently being used to certify the process controls and seal effectiveness of critical integrated circuits for a high reliability system. *RdlaWaley or h~, ~ ~ ~ (~ua] rept. No. 2). T. B. RAMACHANDttA~and J. L. HeATON. ECOM-0101-72-2. (Microwave Assoc.) (Nov. 1973). The interim report describes the results of a continuing program of investigation concerning the reliabilityand ~ile~-e modes of gallium arsenide Gunn and IMPATT diodes, and silicon IMPATI" diodes. Data is presented concernin~ the burn-out distribution in time of Gunn diodes. Also, the changes in d.c. and RF parameters of 700 Gunn and 100 gallium arsenide IMPATr diodes resulting from 24 to 168 hr of d.c. high temperature burn-in are present. The as~macat d eenm~or reUal~lty. R. T. LOVeLOCK. Microelectron. & Reliab. 12, 475 (1973). The simple " U " curve concept used to express the MTTF of components as a means of estimating the MTBF of equipment is based upon a numhex of simplifying assumptions which are often forgotten when applying the simple rules which result. While the simple rules adopted are sutficiently accurate to give a good working value for many components, they are unrealistic when applied 'to connectors. Those features in which a.connector falls to approximate to the simple model normall~ adopted are ccmsidered, and their effects on connector reliability noted. The operating conditions of connectors are grouped and analysed. From these considerations