Quantum wells of InAs between AlSb

A267 J.P. F A U R I E

** a n d A. M I L L I O N

Laboratoire lnfrarouge, L E T I / C E N G , 85X, F-38041 Grenoble Cedex, France

Received 8 July 1983; accepted for publication 7 September 1983 We report far-infrared magneto-absorption investigations performed in a HgTe-CdTe superlattice. From these studies, we obtain the band structure of the superlattice considered here which is found to be a quasi-zero-energy gap semiconductor. We obtain also the value of the overlap between the HgTe and CdTe valence bands.

598 QUANTUM

Surface Science 142 (1984) 598-602 North-Holland, Amsterdam WELLS OF lnAs BETWEEN

C.A. CHANG,

E.E. M E N D E Z

AISb *

** L.L. C H A N G

a n d L. E S A K I

I B M Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598, USA

Received 13 July 1983; accepted for publication 8 August 1983 Quantum wells consisting of a single InAs layer confined between two AISb layers were made, and they exhibited characteristic two-dimensional electron behavior from magneto-transport measurements. Unexpectedly, the electrons appeared to be predominantly extrinsic in nature, unlike the situation in the InAs-GaSb system.