Radiation damage to electronic components

NUCLEAR INSTRUMENTS AND METHODS I36 (I976) 451-472;

RADIATION DAMAGE TO ELECTRONIC

© NORTH-HOLLAND PUBLISHING CO.

COMPONENTS*

S. BATTISTI, R. BOSSART, H. SCHONBACHER and M. VAN de VOORDE CERN, Geneva, Switzerland

Received 15 March 1976 Characteristic properties are presented of some 40 different electronic components (resistors, capacitors, diodes, transistors, and integrated circuits) which were irradiated in a nuclear reactor up to 1015 n/cm2 (E> 1 MeV). Complete circuits (e.g. rf amplifiers and detectors, mixers, differential amplifiers, voltage-to-frequency converters, oscillators, power supplies) were irradiated near the CERN Intersecting Storage Rings up to 1 0 6 Rad (RPL) (dose measured with radiophotoluminescent dosimeters) under simulated operational conditions. Representative measured parameters, such as resistance, capacitance, forward voltage, reverse current, toggle frequencies, are given in graphs as a function of radiation dose, The results are discussed in detail and lead to the over-all conclusion that the operation of electronic components and circuits is seriously affected by radiation environments with doses in the order of 1013 n/cm 2 o r 1 0 4 Rad (RPL); some components and circuits fail completely at doses of 1014 n/cm 2 or l0 s Rad (RPL).

1. Introduction The o p e r a t i o n o f the 400 G e V C E R N Super P r o t o n S y n c h r o t r o n (SPS) requires the use o f a variety o f electronic c o m p o n e n t s , o f which m a n y have to be situated in the r a d i a t i o n environment. In o r d e r to provide for reliable SPS machine operation, the electrical e q u i p m e n t installed should function satisfactorily for long periods even in intense r a d i a t i o n fields, for example ejection areas. It is k n o w n that m a n y types o f electronic c o m p o nents are r a d i a t i o n sensitive, some even m o r e than the most sensitive organic materials, especially the semic o n d u c t o r s which have wide base regions a n d alloyed j u n c t i o n s with minority carriers with long lifetime. The estimated integrated r a d i a t i o n doses in the u n d e r g r o u n d locations, where electronics will be placed in the SPS machine, are sufficiently high, even in the n o r m a l ring areas, to severely d a m a g e electronic components. In o r d e r to prevent c a t a s t r o p h i c failure during the machine o p e r a t i n g periods, on the basis o f the a b o v e arguments, we felt obliged to study the r a d i a t i o n behaviour o f commercially available c o m p o n e n t s , preferably on the E u r o p e a n m a r k e t a n d o f interest to the SPS builders. O u r study p r o g r a m m e was divided into two stages: stage one consisted o f the general selection o f electronic c o m p o n e n t s required for the c o n t r o l systems. This included b o t h (a) s t a n d a r d c o m p o n e n t s available in the C E R N stores, and (b) c o m p o n e n t s with special characteristics a n d / o r r a d i a t i o n - r e s i s t a n t properties. These c o m p o n e n t s , which n u m b e r 43 different types in total, represent diodes, transistors, integrated circuits, capa* Also published as CERN 75-18 (1975).

citors, and resistors. V a c u u m tubes have n o t been included in our test p r o g r a m m e . The c o m p o n e n t s have been i r r a d i a t e d in a nuclear reactor, the r a d i a t i o n conditions a n d d o s i m e t r y being described in section 3. Only a n u m b e r o f representative tests, i.e. " p a r a m e t e r s o f i n t e r e s t " have been p e r f o r m e d on the c o m p o n e n t s , b o t h before and after irradiation. Stage two consisted o f r a d i a t i o n tests under inservice conditions, i.e. functions on actual circuits in a r a d i a t i o n environment. These tests were carried out at C E R N near the beam d u m p o f the Intersecting Storage Rings (ISR). W e refer hereafter to the tests belonging to stage one as " r e a c t o r i r r a d i a t i o n s " and tests belonging to stage two as " a c c e l e r a t o r i r r a d i a t i o n s " . Test methods, test samples, and results are described for both stages in sections 4 and 5.

2. Types of irradiation effects N u c l e a r particle and electromagnetic i r r a d i a t i o n from reactors and high-energy accelerators m a y cause three basic types o f r a d i a t i o n effects in electronic components: 1) physical effects, i.e. displacement o f a nucleus, n e u t r o n c a p t u r e which m a y give rise to " k n o c k - o n " effects, scattering o f the incident b e a m with the emission o f secondary radiation, 2) chemical effects, 3) i o n i z a t i o n effects. The first o f these effects is the physical d i s r u p t i o n o f a material, i.e. the displacement o f a t o m s within a crystal. This effect is best typified by the crystal defects produced by r a d i a t i o n in semiconductors. Such defects ultimately produce, for example, reduction in the amplification factors o f transistors.

452

s. BATTISTI et al.

Chemical effects resulting from radiation are primarily caused by the breaking of existing chemical bonds and/or the formation of new bonds. These effects often result in gas evolution. Thus, increased pressure caused by the radiation degradation of oil in an oilimpregnated paper capacitor causes the rolled paper to expand out of its case. Ionization produces electrical paths that allow an electric charge to break down isolations and potential barriers. The simplest example is the frequently large and temporary increases in the leakage currents of insulators or semiconductors that may occur while the materials are in an ionizing radiation environment. These induced leakage currents may be as much as a few orders of magnitude above normal values. The mechanism predominating depends on various factors, for exammle the type of radiation, its energy, its intensity, etc. In the high-energy accelerator, for example, the particle and energy spectrum is entirely different from the one present in a nuclear reactor. One has therefore to be extremely careful when interpreting the results of radiation damage to electronic components if the environment in which they were tested is different from the one in which they are to be used. Measurements on electronic components which have been irradiated in both high-energy accelerators and in a nuclear reactor have shown that the damage effects for comparable exposure dose agree within a factor of two1), wheras damage effects from a pure gamma source (6°Co) can be 100 or more times lower. REACTOR

CORE

RADIATION

POSITION

3. Irradiation conditions and dosimetry Two approaches can be taken in measuring radiation exposures: 1) The "exposure dose" can be described in terms of the radiation field to which the sample was subjected. Example: n/cm 2 for reactor irradiations. 2) The absorbed dose can be described in terms of the energy actually absorbed in the sample. Example: the " R a d ' , defined as 100 erg/g mateial. In the studies of radiation effects on electronic components, the first approach is preferable, since the "equal energy-equal damage" concept does not hold in solid inorganic materials, i.e. although some materials (organics) can be damaged by any energy transferred from a radiation field, inorganic parts of electronic components are permanently damaged only when the energy transfer process involves the nuclei of the atoms of the material. Therefore, any unit that gives only a statement of the energy absorbed will not be sufficient to convey all the information necessary to interpret damage data on electronic components. In this report, the radiation dose is given in: 1) fluence units n/cm 2 ( E > I MeV) (radiation damage in electrical components primarily results from radiation with energies in excess of I MeV); 2) equivalent fads in CH material, obtained from calculations (this dose unit was used for the reason RADIATION

11

;NIF

POSITION

66 75

\

~o

\

29

\,

2

3

Z.

5

5

7

@

9

r

so

/

CD i

30

'

I

18

E3 72 ZkJT° 73 2L_9o m 71 65[64 6s 8o!%

E5

77 ,P6= 69 E 6

67

74

I

78~--?

RG E2 9

8

1

2

3

5

6

7

8

J

Fig. 1. Radiation position SN1F for electronic components in the ASTRA reactor (dimensions in cm).

RADIATION TABLE

D A M A G E TO E L E C T R O N I C TABLE 2

1

Main characteristics of the S N I F reactor position.

Threshold reactions used f o r neutron flux measurements.

2 . ~ 6 . 0 x 109 n/cm 2 s" 5.5-42.0 x l0 s nth/cm~ s a 20-50 Rad (CH)/s a 3-4 Rad (CH)/s" ~ 3 0 °C air

Fast neutron flux ( E > 1 MeV) Thermal neutron flux Fast neutron dose rate G a m m a dose rate Temperature Irradiation medium

The actual value depends on the core configuration and on the exact distance o f the container from the core.

of correlation of the results of other experiments and radiation damage studies); 3) Rad (RPL) measured with phosphate glass radiophotouluminescent dosimeters near the C E R N accelerators×). We describe below irradiation facilities and dosimetry methods in more detail. 3.1. NUCLEAR REACTOR The irradiations were performed in the A S T R A research reactor 3) in Seibersdorf, Austria, which is a swimming pool reactor with a power of 7 MW. The electronic components were irradiated in the standard neutron irradiation facility (SNIF)4). The irradiation position with respect to the reactor core and the radiation container is shown in figs. 1 and 2. The main characteristics for this position are summarized in table 1. The neutron flux of an energy larger than 1 MeV was determined with the threshold reactions given in table 2. ~90

34C Pb REACTOR CORE

At

CENTRE LINE

453

COMPONENTS

"\ "\ \

\\ \

\\\

\

¢l. 30

Fig. 2. Irradiation container (dimensions in ram).

Reaction

Half-life

27Al(n, ~)2'~Na 2"~Mg(n, p)24Na SSNi(n, ppSCo 32S(n, p)32p 1151n(n,n')t15mln

15 h 15 h 71.3 d 14.3 d 4.5 h

Crosssection

Threshold energy

(rob)

(MeV)

74 48 493 280 260

7.5 6.3 2.8 2.8 1.05

Knowing the reaction cross-section, the average fraction of neutron energy transferred to an atom in an elastic collision and integrating the neutron fluence over the effective range (e.g. 1 MeV to ~ ) , one can calculate the dose equivalent in various materials. For the irradiation position SNIF, the neutron ftuence ( E > I MeV) can be approximated by the following relation (~(E) = C [

J

~ E=

e -0"526E d E , 1 MeV

where C = 2 . 5 × 1 0 9 t o 5 . 2 × 1 0 9 , depending on the reactor core configuration and the distance o f the sample container from the core. For our conditions, one can calculate 5) the neutron-to-dose conversion: --

ORad~Cfl)

~bn(E> 1 MeV) × 3 × 10 - 9 Rad cm 2

n

• cm

- 2

The thermal neutron flux was determined by the reaction 197Au(n,7)l°SAu, half-life 64.8 h, cr=98 b. The damage produced by thermal neutron irradiation can be neglected owing to the low thermal neutron cross-section of semicondcutor materials. Even when boron, which has a high thermal neutron cross-section (4000 b for J°B with a natural abundance of 19.6%), is used as a dopaqt, its normal concentration of 1 part in 106 results in negligible radiation damage. A pair of ionization chambers were used to measure the absorbed dose from neutron and g a m m a irradiation The wall material of one chamber was made of C H material and filled with acetylene. This chamber measures the fast neutron and g a m m a dose-rate. The second chamber has a wall of magnesium and is filled with argon ; it measures the g a m m a dose-rate only. The chambers were calibrated against a Fricke dosimeter in a 6°Co 7 source. More details about the ionization chambers used and their calibration are given in A h n s t r 6 m et al.6).

454

s. BATTISTI et al. ISR beam dump

RPL dosimeters

Fig. 3. Irradiation of electronic circuits near the ISR beam dump. 3.2. HIGH-ENERGY ACCELERATOR The electronic circuits have been irradiated at C E R N about 50-100 cm from the ISR beam dump (see fig. 3), where we obtained 2.6-1.8 Rad per l012 protons dumped; owing to the short dumping time of 3.4 ps, the instantaneous dose rate to the components is as high as 3.6 x 10 9 to 1.8 x 10 9 Rad/h. The radiation field in the ISR consists of high-energy primary protons ( ~ 2 0 GeV/c) and a broad spectrum of secondary protons, neutrons, mesons, etc. Dosimetry at the ISR is performed by the phosphate glass radiophotoluminescent (RPL) system, which has been extensively documented2'7). The fluence of strongly interacting particles is also measured at the ISR with threshold activation detectorsS). Comparison of these fluence measurements with

dose measurements by RPL-glass dosimeters allows experimental fluence-to-dose conversion factors to be obtained. Table 2 gives some conventionally used activation detectors 9) for the fast neutron and highenergy component of the radiation field. Adopting the reaction 32S(n,p)3ZP for neutrons of 3-25 MeV and 27Al(spall.)ZZNa for high-energy particles (HEP) above 25 MeV, a fluence-to-RPL-dose conversion factor 9) is obtained:

I

n, 3 < E < 25 M e V = 6 x 1 0 - s Rad x ~b3ZP

RPL dose

[HEP, E > 25 MeV

+ 5 x 10 -8 Rad x ~b 22Na.

Qty.

15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 5 5 15 15 15 15 15 15 15 15 15 15 5 5 5 5 5 15 15 5 5 5 5 5 5

No.

l 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43

Resistor carbon R e s i s t o r m e t a l film Resistor wirewound Resistor potmeter cermet Capacitor ceramic Capacitor mica Capacitor polyester Capacitor polycarbonate Capacitor MKL C a p a c i t o r AI electrolytic Capacitor tantalum D i o d e Si, rectifier D i o d e Si, general p u r p o s e D i o d e Si, general p u r p o s e D i o d e Si, h o t c a r r i e r D i o d e Si, Z e n e r D i o d e Ge, t u n n e l T r a n s i s t o r Si, N P N T r a n s i s t o r Si, P N P , tad. res. T r a n s i s t o r , Si, P N P , t a d . res. T r a n s i s t o r Si, F E T , N - c h a n n e l T r a n s i s t o r Si, F E T , P - c h a n n e l Transistor MOSFET, P-channel Transistor MOSFET, N-channel I n t e g r a t e d T T L gate I n t e g r a t e d T T L flip-flop Integrated TTL counter Integrated TTL one-shot I n t e g r a t e d T T L gate I n t e g r a t e d T T L flip-flop I n t e g r a t e d amplifier, rad. res. I n t e g r a t e d amplifier, rad. res. I n t e g r a t e d Op. amplifier, rad. res. I n t e g r a t e d Op. amplifier, rad. res. I n t e g r a t e d Op. amplifier, F E T i n p u t I n t e g r a t e d Op. amplifier, gen. p u r p . Integrated comparator I n t e g r a t e d op. a m p l i f i e r I n t e g r a t e d op. arnplifier I n t e g r a t e d op. a m p l i f i e r F E T i n p u t D i s c r e t e op. a m p l i f i e r C o n v e r t e r d i g i t a l - t o - a n a l . 10 bits Se rectifier

Designation

TABLE 3 L i s t o f c o m p o n e n t s t e s t e d in the reactor.

--

40, 41

x

x x

x

x

X X

X

X

X X

X

X

x x

x

X

36-39 34, 35

x x x x x x x

x x

X

X

C1 5.9x1014

X

X

x x x x x x x x x x

x

x

x

--

B1 9 . 3 x 1 0 la

X

A1 8 . 0 x 1 0 la

X

x x

x x

x

D 1.0xl012

MeV)

x x x x x x x x x x x x x x x

x

x

x x x

x x x x x x x x x

x

x

C 1 . 0 x l 0 Is

d o s e in n / c m 2 ( E > I

x

x x x x x x x x x x x x x

x

x

B 1 . 0 x l 0 l*

x x x x x x x x x x x x x

x

x

A 1 . 3 × 1 0 ~3

Exposure

6 7 11 10 12 13 8 14 9 15 16 17 18 19, 20 21, 22 23 24 25 26 27 28 29 30 31 32 33 -------

5

100 f2, 5 % 1 k.Q, 78P 20 n F , 30 V 22 p F , 300 V 15 n F , 125 V 15 n F , 250 V 0.22 p F , 100 V 200 p F , 10 V 15pF, 20V 10D6 IN914 B A Y 72 H P 2900 Z F 6, 8 1N 3717 2N 918 2 N 5332 M M 4261 H 2 N 3819 2 N 3820 3 N 165 BSV 81 S N 7400 N SN 7473 N S N 7493 N S N 4121 N M C 3000 P M C 3055 P R S N 55900 R S N 55910 R S N 52709 p A 744 l t A 740 M C 1741 S N 72710 N T 1303 T 1319 T 1420 T 1024 T 4022 B 250 C75

4

1 k.Q, 1%

Fig.

1 k.Q, 5%

Type

O Z rr5 Z -]

~3

C) Z

t" r~ o ,..]

O r~ ,-4 ©

Z ~7

,.-]

456

S. BATTISTI et al.

TABLE 4 Electronic circuits tested near the accelerator (crate 1). Circuit no.

Type

Supplier

Model

Total dose received (Rad)

A, B

Wide-band amplifier 0.1-400 MHz/20 dB Wide-band amplifier 200 MHz/40 dB Quartz oscillator 10 MHz Mixer Coaxial detector

Hewlett Packard

HP 35002 A

~106

Avantek

G P D 401 + 402 + 403

~ 106

Oscilloquarz Summit Hewlett Packard

B-1335 1301 HP 8471 A

~106 ~ 3 x 105 6 x 104

C, D E F, G H

TABLE 5 Differential amplifiers with discrete components tested in the accelerator (crate 2). Circuit no.

Card no.

Input stage

Second stage

Output

Total dose received (Rad)

SPS 203304

2C 415

2V 205

BC 107 B 2N 2219 A 2N 2905 A

~ 3 x 105

SPS 203304

2N 2060

2N 5117 (H)

BC 107 B 2N 2219 A 2N 2905 A

~ 3 x l0 s

SPS 203304

2N 4044 (H)

2N 5117 (H)

BC 107 B 2N 2219 A 2N 2905 A

~ 3 × 105

SPS 20303

E400 (FET)

2N 5117 (H)

BC 107 B 2N 2219 A 2N 2905 A

~3 x l0 s

SPS 20303

E 420 (FET)

2N 5117 (H)

BC 107 B 2N 2219 A 2N 2905 A

~ 3 x l0 s

A1 A2 B1 B2 C1 C2

D1 / D2 /

E2

This conversion factor also takes into a c c o u n t the c o m p o n e n t s o f the r a d i a t io n field, which do n o t give rise to any response in the activation detectors. Its application is, however, restricted to a radiation field similar to the one present near our accelerators.

4. Test samples, test procedures, and exposure doses 4.1. REACTOR IRRADIATIONS A large variety of electronic c o m p o n e n t s have been exposed to radiation: resistors, capacitors, diodes, transistors, digital integrated circuits, analog integrated circuits, and special c o m p o n e n t s . Each family o f resistors, capacitors, diodes, etc., is

represented by various types o f materials and production techniques. Th e list o f c o m p o n e n t s tested, indicating the designation, type, and exposure dose, is given in table 3. The electrical characteristics of each c o m p o n e n t have been measured prior to irradiation. F o r those c o m p o n e n t s readily available f r o m stock, 3 batches o f 5 samples each have been remeasured after exposure at doses A, B, C, or D. O f the expensive semiconductors only 5 samples were used for subsequent irradiations (doses A, A I , BI, C1). Th e measurements o f the electrical characteristics o f every individual c o m p o n e n t have been standardized to the original value prior to irradiation of 100% or 1000%o. This permits the separation o f the r ad i at i o n

RADIATION

DAMAGE

COMPONENTS

457

Model

Remarks

Total dosereceived (Rad)

Radiation-resistant dielectric isolation thin-film resistors Monolithic construction F E T input planar resistors Hybrid construction F E T input thinfilm resistors Radiation-resistant dielectric isolation thin-film resistors

TO ELECTRONIC

TABLE 6 Integrated operational amplifiers tested in the accelerator (crate 2). Circuit no.

Card no.

Supplier

F

SPS 203302

Fairchild

/~A 744 (H)

G

SPS 203302

Teledyne/Philbrick

1321

H

SPS 203302

Teledyne/Philbrick

1407

J

SPS 203302

Harris

0778-2R

effects from the production spread of the component's characteristies. 4.2. ACCELERATORIRRADIATIONS After having finished the irradiation tests on 43 individual components described in the above section, tests were carried out on complete electronic circuits, mounted on circuit boards and powered by standard supply voltages. These circuits are likely to be installed in the C E R N SPS, namely circuits for 200 M H z such as R F amplifiers and detectors, mixers, differential amplifiers, voltage-to-frequency converters, oscillators, power supplies,etc. The circuits were powered by their approrpiate supply voltages in order to evaluate the damage caused by the radiation-induced photo-currents "/oe

3 x l0 s 3 x 10 5 3 x l0 s 3 x 10 5

and potential barrier breakdown on semiconductors. These transient currents can be limited by an appropriate circuit design. The circuits and the maximum dose received are listed in tables 4---6. Measurements on the performance of the circuits were made at various stages between 104 and 10 6 Rad and the results are given in section 5.2. 5. Analysis of test results 5.1. REAC'IOR IRRADIATIONS The significant characteristics versus neutron fluence and the calculated fast neutron ( E > 1 MeV) dose of most of the components are represented in figs. 4-41. Those components which have been destroyed after the first or second irradiation are not included in the % o

1030 1006 1020

1004 1002 1000 998 996 994

1010 1000 990

1012 3. 103

Initial value

1000°/,,

1013 3. 10z'

: R =

I 1014

3.105

1015nlc2(E>1MeV) 3.106 rod (CH)

988,8 1010,8 3"k

Fig. 4. Allen Bradley carbon resistor (l k-Q, 5 % , ¼W).

J

1012 3.103

1013 3.104

1014 3.105

1015n/c2(E MMeV) 3.106 tad (CH)

Initial value 1000°Ioo R=993,8 999,8.0. Fig. 5. Sfernice Metafilm resistor (1 kQ, 1%, ¼W).

458

s. BATTISTI et al.

figures. The mean value of 5 samples for every dose tested has been derived with the minimum/maximum deviations from the mean value for the different radiation doses. In the following we analyse the results obtained in more detail. The resistor6 (figs. 4-7) were measured by a General Radio 1608 precision impedance bridge with an accuracy of + 5 x 10 -4. The measurements clearly show that the resistance of the Allen Bradley carbon resistors is

increased by radiation. -[he Sfernice wirewound resistors remain perfectly constant for all doses tested. The Helitrim cermet potmeters also remain fairly stable. In all cases (up to 10 ~5 n/cm z) the variation was less than the tolerances given by the manufacturer (e.g. 1% or 5%). The capacitors (figs. 8-14) can be divided in three categories: %°

[C

o,/ja

1020

// //

1010

// /

1000

_ -- --_-_-

/ kx

990

~_.._---~ \\

1012 1010 1008 1006 10011

/J /

/

/ / / / /

1002 1000 998

\\\ 98O 10i2

1013

3.103

3.10/'

10111 3.105

1012 3.103

1015rdc:2E >IMeV)

10111 3.105

1013 3.10/`

1015n/c2(E=4MeV) 3.106 rad (CH}

3.106 rod (CH) Initial

Initial value 1000%o R=98,76,..102,69D.

valuelO00°/C:q215. °, .0,253 gF

Fig. 8. M K L capacitor (0.22 pF/lO0 V).

Fig. 6. Sfernice Wirewound resistor (100 g2, 5%, ½W). °/°,

%°

1002 1001 1000 - - - - : ~ 999

1008 1006

z_~-.--

10011 1002

_ _---.--.__......

S /

./

1000 998 996

998 997

/

/

/

/

9911

1012 3.103

1013 3.1011

Initial value 1000%o Fig.

1014 3.105

R= 9 2 0 . . . 9 9 8 . 0 .

7. Potentiometer Helitrim 78 P (1 k.Q).

1015n/cm2(E>IMeVI 3.106 rod ICH)

"~

10~2 3.103

Initial value

1013 3.104

1014 3.105

1015n/cm2(E>IMeV)

3.106rad (CH)

I000"/oo:C:16,65.. 15,211uF

Fig. 9. Tantalum capacitor (15 pF/20 V).

RADIATION

D A M A G E TO E L E C T R O N I C

1) those which remain stable within + 1 % for an exposure dose of 1015 n/cm 2, such as the tantalum capacitors 22 pF, and the M K L capacitors 0.221tF, 2) those which show a change of their capacitance by several per cent up to _+ I0% after a dose of 1015 I1/CITI2, such as the polyester capacitors 15 nF, the ceramic capacitors 20 nF and the polycarbonate capacitors 15 nF, 3) the electrolytic capacitors 200/~F show a reduction

459

COMPONENTS

of capacitance by about 20% for a dose of 1015 n/ cm 2 (fig. 14). The diodes (figs. 15-22) tested are all silicon diodes, except the tunnel diodes which are of germanium. The forward voltages and the reverse currents of the signal and rectifier diodes have been measured. The rectifier diodes l0 D6 are severely damaged by an exposure dose of l013 n/cm 3. The forward voltage of the diodes l0 D6 measured at a current of 500 mA rises to 5.6 V %

%o

1012 1010 1008 1006

/

/

/

/

/

/

120 110

100/, 1002

100

1000 998

(30

996 994 1012 3.103

1013 3.10/*

1014 3.10 6

1015n/c~ (E >IMeV)

1012 3.103

3.106 rad (CH)

Initial value 1000%o :C=21,2.. 22,8pF

3,10/"

j015n/cm2(E>IMeV)

3.105

3.106tad (CH)

C

Initial value 100% :C = 13~9 ,.16,1 nF

Fig. 10. Mica capacitor (22 pF/300 V). %

10113----10 lz.

Fig. 12. Polyester capacitor (15 nF/160 V). %

C

110

110 i

100

100

/ f J

90

go 80

~1o12 3.103

lOi3 3.10/*

lol/* 3.105

Initial value 100%:C= 23,6..31nF Fig. l 1. Ceramic capacitor (20 nF/30 V).

1015n/cm2 (E >lMeV) 3.106 rad {CH)

lO ~2

lO13

3.103

3.10/*

lO 1/* 3.105

1015n/cm2(E>IM • V) 3.106 rad(CH)

InitialvaluelO0%:C=l/*,7.. 163 nF Fig. 13. Polycarbonatc capacitor 05 n F/250 V).

460

s. BATTISTI et al.

for a dose of 1014 n/cm 2. The leakage current at 10 V reverse voltage rises for the diodes 10 D 6 from 2.5 nA prior to irradiation up to 800 nA typically for a dose o f 1014 n/cm 2. The forward voltages of the diodes "/

C

1 mA

IF=

Forward voltage test

UF

O~

y

%

UF

160 / 110

140

100

120

7

// ///

\

90 80

IF= lmA y

100

5J.

/i /

60

x i

10~2 3.103

1013 3.104

1014 3.10 5

7

1015n/crn2(E >lMeV)

1012 3.103

3.106 rad (CHI

Initial value 100%:C=150. 203}4F

1013 3.104

1014 3.105

1015n/c rn2 (E >lMeV) 3.106 rad (CH)

Initial valuel00*/.:UF= 0 63..0,71 V

Fig. 14. Aluminium electrolytic capacitor (200 HF/IO V).

Fig. 16. Signal diode I N 914.

IF = lmA

IF : 500mA

Forward voltage test

Forward voltage test 0~ ~

U

F ).

J

% I UF

160 i

800 I ?00 6OO

/ /

"

soo

% i UF

140 [

t// / /

i /

400 i

/ /

T

ii/I /

120

300 T 200

I00 i

.

100 1 0.

80:

I i

I

1012 3.103

r

1013 3.10/~

1014 3.105

Initialvaluel00*/.:U F = 0,79 082V Fig. 15. Rectifier diode 10 D 6.

1015n/c'~2(E >lMeV) 3.106rad (C H)

i/

IF = 1 mA_

T

I

%2 3.103

1013 3.10z'

10lz' 3.105

Initialvalue100°1o U F =0,56. 0,6V Fig. 17. Signal diode B A Y 72.

1015n/cm2 (E >IM aM) 3 106rad (CH)

RADIATION DAMAGE TO ELECTRONIC COMPONENTS IF=lmA

~ IKl~

Forward voltage test 0

Forward voltage tcst O ~ ° ~ U

461

F

o

IF=ImA ~JUF

/ %

%

UF

UF

110 1/.0 100 120

IF=I mA

90 IF=I mA

100 ........

~_

80 /lye__ ~ 1012

__

3.103

80

_ ~ 1/

T_

60

1 I I

,t _ _ 1013

3.104

101/"

3.105

1012

1015n/cm2lE>IMeV) 3.106 rad (CH)

3.103

1014 3.105

3.106 rad (CH)

Initial valuelOO=/°:UF=O,67 . 0,69V

Initial valuel00%U F ;0,32 ...0,36 V

Fig. 20. Zener diode ZF 6, 8.

Fig. 18. Signal diode HP 2900.

Zener voltage test

1013 3.104

Iz~IOmA IKf 0 ~ ~ U z

Ipmeasured with 8097 Elliot Curve Tracer

"-U %

% :IUz i

]p

140

104 t 120 103 102 I

IZ = 10mA

101

100

100 80

98 97

60

i

/~

, 1012 3.103

r-~ 1013 3.104

I 101/* 3.106

Initial value 100°/o:Uz =6,67... ?11V Fig. 19. Zener diode ZF 6, 8.

r 2 10 5n/cm (E>tMeV) 3.106 rad (CH)

10'12 3.103

1013 3.104

1014 3.105

Initial value 100%:Ip= 4.. 4,&mA

Fig. 21. Tunnel diode 1N 3717.

1015n/cm2(E>IM eV)

3.106rod (CH)

462

s. B A T T I S T I et al.

1N914 and BAY72 increase rapidly for a dose of 1014n/cm 2 upwards. The leakage currents remain constant for the diodes 1N914 and double for the diodes BAY72 for a dose of 1014 n/cl/12. The hot carrier diode HP 2900 is the fastest diode of those tested and the least damaged by radiation. The forward voltage and leakage current of the HP 2900 remain constant up to a dose of 1014 n/cm 2. For a dose of 1015 n/cm, the forward voltage increases by 5% typically and the reverse current is doubled. The Zener diodes ZF 6.8 are also radiation-resistant and provide a constant Zener voltage within 2% up to a dose of 1015 n/cm 2. The germanium tunnel diodes 1N3717 have a fairly constant peak current provided by the tunnel effect; however, the valley current increases rapidly for doses from 1014 n/cm 2 onwards. The selenium diodes Siemens B 250 C 75 (figs. 40 and 41) can be used as rectifiers up to doses of 1015 n/ cm 2. The forward voltage U v ( I v = 1 0 m A ) remains practically constant for all doses tested, whereas it increases for a higher current Iv = 100 mA about 25% for a dose of 1015 n/cm 2. The reverse current decreases considerably by radiation. The transistors (figs. 23-29) are very sensitive to

radiation. The most critical parameter is the current amplification factor fl, which is seriously reduced by radiation. The transistors tested are all of silicon. The planar transistors 2N918, 2N5322, and MM4261H are very fast ones with a small base width. The small signal current gain fl(lb=25/~A) of the transistors 2N918 falls to 50% of its initial value after a dose of about 2 × 1013 n/cm 2. The types 2N5322 andMM4261H are special pnp radiation-resistant planar transistors, which have a guaranteed d.c. current gain of 50% I¢= 10 mA) after a dose of 5 × 1014 n/cm 2 (E>0.01 MeV). Our measured small signal current gain fl(lb=25 #A) falls down to 50% of the non-irradiated value at a dose of about l014 n/cm 2 ( E > l MeV) for MM4261H and 3 x 1 0 1 3 n / c m 2 for 2N5322. The collector cut-off current lcBo and the collector-emitter voltage VCEo remain within the guaranteed values for the non-irradiated transistors as well as for those irradiated up to 1015 n/cm 2, for all types 2N918, 2N5332 and MM4261H. The junction field effect transistors 2N3819 (N-channel) and 2N3820(P-channel) are all broken down after an exposure dose of 1015 n/ cm 2. For a dose of 1014 n/cm 2, the small signal transfer admittance yf~(Vcs=0) is still 50% of the original

15 Iv measured with 8097 Elliot Curve Tracer

If'~

Curve ELLIOTT 8,097

,~ measured with

/

Tracer

~Ic ~

IV %

IV

Y

200

%

i//Ill

180 1GO

I1f l

140

IiII

i/l

120

\ ",\ l///

100 80 GO

1 ,~_ AIc IC -10 jaA ~i'-Ib=30ja

"1/

lO~2 3.103

1013 3.10/'

1014 3.105

Initial value 100°/,:Iv = 0,3. 0,6 mA

Fig. 22. Tunnel diode IN 3717.

1015n/cm2 (E >IM eV) 3.106 rod (CH)

I

b

A 20pA

=

l 2V

-

UCE

~9

100 90 80 70 60

\\

_ _

\

S0 t,0 30 20

10 0

- - - - n

1012 3.103

1013 3.10/.

1014 3.105

Initial value100% :/9= 21...80 Fig. 23. Transistor 2N 918 (NPN).

~

1015n/cm2(E>lMeV) 3.106rad(CH)

RADIATION

/Bmeasured with Curve trace r ELLIOTT 8097

D A M A G E TO E L E C T R O N I C

.1Or

1C /3= zMC l 1-'~-~A ~ I b = 3 0 p A AI c ~ l b , = 20~A

%

2'V

463

COMPONENTS

v~, = u-z.~

-.

oo~

u,I

=UcE %

yfs

120

100

110 100

8O

9O 8O

x\ 60

70 60

40

50 40

\

\

3O

\ \ \\ \ x\

2O

\\

20 0

I0

"~

0

1012 3.10 3

1013

1014

3.10 4

1015n/~m2 (E >1MeV)

3.10 5

10i2 3.103

10~ 3.104

101~ 3.10 S

1015n/era2 (E >IMeV) 3.106 rad (CH)

3.106 rad (CH) Initial value 100% : Yfs= 4,6..?,8 m A/V

Initial value100% :,/3= 32... /,1

Fig. 26. F E T transistor 2N 3819 (N-channel).

Fig. 24. Transistor 2N 5332 (PNP). ]

~

I C ,~measured with curve tracer ELLIOTT 8097

/Xlc

P--10p'A

Yfs = ~- A . ~ - - AI C . ~

_,,.~_ . 2'V

-lOV

W-

Ib =30HA Ib= 20pA

oo~ ,,o.,~,F

'~oC~. I--~

= UCE

% % 110

100

100

90

80

80

70

\\

6O

60

50 ~0

\ \ ,\ \

40

\ \

3O 20

20

10 0

0

1012 3.103

~013-3. I0~

Initiaivalue100%:/3=44...

10I~ 3.105

54

Fig. 25. Transistor MM 4261 H (PNP).

1015n/cm2 (E >lMeV} 3.106 rad (CH)

ioi2 3.10 3

1013 3.104

I\

,\

I0Iz

3,10 S

101Sn/cm2 (E >IM eV]

3.106 rad (CH}

Initial valuel00%:Yfs=3,4 ...5 m A / v Fig. 27. F E T transistor 2N 3820 (P-channel).

S. BATTISFI et al.

464

~

~.,~-]~R~.,=ConstantG O UONI 'h~T ~ " uJ~=620""2250J3 %

.SV

UON %

30O 280

; /

100

i

260 2/*0 /

220

/

f

80

/

200

"-

/

//

/ /

/

180 ,

Iou.r (o)

/ i

5o i

/

/

, \ \

/

160 11,0

,4' //

J

7

,/

\

J /

120 ~

T /

100 80 60 1012 3.103

/i /

1013 310/*

I

1014 3.105

\

1015n/cm 2 (E >1~,1eV)

1014

1015n/c m2(E>lMeV) 3.106 rad {CH)

3.103

3.106rad (CH)

3105

3.10/*

Initial value 100°/o: Iowr(o)=36,7... 56/, mA

Initial value 100'/o: UON : -5V

Fig. 30. Positive N A N D

gate SN 7400.

Fig. 28. MOS-FET transistor 3N 165 (P-channel).

~

RON

f

°/°

%

RON

600

100

500

80

400

60

300

/*0

200

20 0

100 1012 3.103

1013 3.104

1014 3.105

1015n/cm2(E>lMeV) 3106tad (CH)

Initial value 100"/. :RoN:80 ..93 .fL Fig. 29. MOS-FET transistor BSV 81 (N-channel).

]

f//*

I

\

i

"

i

"')'

i

T

1012 3.103

1013 3.10/`

1014 3.105

1015n/cm 2 (E >lbteV) 3.106 rad (CH}

Initial value100°/°: f/4 = 5MHz

Fig. 3 I. J-K master-slave flip-flops SN 7473.

RADIATION

DAMAGE

TO E L E C T R O N I C

465

COMPONENTS

VIo 1,5V

GND

%

50~, ~}nF .TI2V

VCC

36 720%

f/15

%

VID

100

6000

B0

4000

60 3000 40

2000 /

2O

/

/

1000

500

0_~

r 1012 3.103

1013 3.10 L

101/' 3.105

1015 n/cm 2 (E >IM eV) 3,105rad (CH)

O.

102 3103

Initial value100%: f/16 = 1,3 MHz

1013 3.104

1014

1 n/cm 2 (E >lMeV) 1015

3.t0 5

3.106red (CHJ

Initiol value100°lo VID = I ..I,3 mV

Fig. 32.4-bit binary counter SN 7493.

Fig. 34. Differential c o m p a r a t o r SN 72710.

121K ~0 qF

~,ng

VCC

-~ I tB=~R

l.~ A~2~ ,p(our)= J ~L~J

% I tp(ouT) I i

T

1 i

II B

%

J

200

/I,

/

ti / j, '

/ / 'ill

20o(

i

,o<

150 T

i ,' /

i I

9

!,o:.i.,.

o.I~5 .n. 2v

GND

!

3

o i

1600

.. 1

// ~

I

T I00 _

50 .

T+

1012 3 I03

1013 3.104

i01/, 3.10 5

folSnlcm2 I'E>IMeW 3.106rod ICH}

lnitiaivalue100%:tp(our)=97.. 981as Fig. 33. Monostable multivibrator SN 74121.

I

1012 3.103

1013 3.104

Initial value 100"/.: IIB=

101/ 3.105

5 ~ l

1015

n/cm2(E>lMeV)

3.106 rad {CH)

1114A

Fig. 35. Differential c o m p a r a t o r SN 72710.

S. B A T T I S T I

466

et al.

÷

*15V loKn 111-lsv

/

%

Vl 0

/,,

,' t

35001

A

lo.~ ?%v

Au2

10 y.,~l I

/

J

,

:/~l

%

~J

AV D

100 30001 I

/

80

/

2500! I * 2000'+

/

/

60

l 1500T

1,0

/

,oool

\

20

\\ \\

///

500}//~ 1

\

0 1012

////:~

3.10 3

100 V/" 0 1012

1013

3.103

101/~

3.10~

3.105

1014

10~3

3.105

3.10/'

I015 n/:m2 [E >IMeV) 3.106rod (CH)

1015n/:m2(E >lMeV) 3.106 rod (CH)

Initial value 100"A: AVD= 200'000

Initial valuel00%:ViO=2 mV Fig. 38. Operational amplifier M C 1741 CL.

Fig. 36. O p e r a t i o n a l a m p l i f i e r M C 1741 CL.

I IB-.u_R_ tM

%

lIB

%

I000(

/

/

60 1,0

1012

\

20

'/ ~"

0

- = ~ ~

3.103

VOUT

80

I / "

1012 3.103 10'13

3.104

~ o u r i •

100

i/

/ i / // / // / // / // i // , // / // z 1/

500C I,OOC 3000 200C 1000 100

10V J

~'I-"~IO[ rouT(or)

10lg

3.105

Initial value 100%: liB= 25 ...175 nA Fig. 37. O p e r a t i o n a l a m p l i f i e r M C 1741 e L .

1013 3.104

1;15 n/cm2 (E>IMeV)

101/' 3.105

1015n/cm 2 (E >IMeV) 3.106 rod (CH)

3.106 rod ICH) Initial value lO0*/,:VouT= IOV Fig. 39. O p e r a t i o n a l a m p l i f i e r M C 1741 CL.

467

R A D I A T I O N DAMAGE TO E L E C T R O N I C COMPONENTS

value for all of the transistors type 2N3918 and 2N3820. The zero gate voltage drain current IDSS is reduced to a third of its original value and the gatesource cut-off voltage VcS¢OVF) amounts to about 60% of the initial values for both types 2N3819 and 2N3820 at a dose of 1014 n/cm 2. The Mosfet transistors BSV81 and 3N165 are used as switches for analog signals. Under the effect of radiation, the on-resistance increases and the off-resistance decreases. The transistors BSV81 (N-channel) can be used as switches up to a dose of 10 ~3 n/cm 2, then the on-resistance increases rapidly and after I0 ~5 n/cm 2, all transistors BSV81 are destroyed. The Mosfet transistor 3N165 (P-channel) has been tested up to a dose of l014 n/cm 2. In order to keep the on-resistance constant, the gatesource voltage has been increased by 60% after a dose of 10 la n/cm z. The TTL integrated circuits (figs. 30-33) tolerate radiation doses up to l0 ~4 n/cm 2. At l015 n/cm 2, all T T L integrated circuits are heavily damaged. The most critical parameter is the output sink current /out(0), which defines the fan-out factor. The input current Ii,(0) remains practically constant for all doses tested. Up to a dose of 10 ~3 n/cm 2, the T T L integrated circuits work properly with a slightly reduced fan-out factor, which is still above 10. At a dose of 10 ~4 n/cm 2, the ] Reverse current

O test

!

V

fan out of the gates SN7400N is reduced to a factor 2-3, which must be considered as the limit of operation. For the same dose 1014 n/cm 2, the maximum toggle frequency of the flip-flops SN7473N and of the counter SN7493N falls to about 70% of the original value. The gates MC 3000 P and the flip-flops MC 3055 P are somewhat more sensitive to radiation than the SN74 series. The monostable multivibrator SN74121N can be used up to a dose of 10 j3 n / c m 2 only. A radiation environment has a very marked effect on the behaviour of the linear integrated circuits (figs. 34--39). The input currents and input offset voltages increase under the impact of radiation, whereas the voltage gain and output currents decrease. Several so-called radiation-resistant devices have been tested, such as the sense amplifier RSN 55900 (Texas Instruments) and RSN 55910 (T.I.) and the operational amplifiers RSN 52709 (T.I.) and IrA 744 (Fairchild). The radiation-tolerant sense amplifiers RSN 55900 and RSN 55910 are operational up to a dose of 10 ~4 n/cm 2. The radiation-resistant operational amplifiers RSN 52709 tolerate doses up to l0 ~3 n/cm 2, however, the operational amplifiers /IA 744 fail completely after a dose of 10 ~3 n/cm 2. The popular comparators SN 72710 N (T.I.) tolerate doses up to 1013 n/cm 2, and are of limited use up to 10 ~4 n/cm 2. The standard

c ~ ba~}~d

Forward voltoge test

1/.0

%

%

IR

UF

100 "~x\\

80

140

60

120

~0

100

/

20

80 \

1012 3.103

I 013 3.104

101/* 3.105

Initial value 100%:IR= 3 . . 7 HA Fig. 40. Siemens selenium rectifier bridge.

1015n/cm 2 (E >IMeV] 3.106 rad (CH)

10'12 3.103

T

1013 3.10/*

1014 3.10 5

Initial value 100°A:UF=6,21.. 6,88V Fig. 41. Siemens selenium rectifier bridge.

1 lSn/cm 2|E>IMeV) 3.106 rod {CH)

468

s. BATTISTI et al.

integrated operational amplifiers MC 1741 (Motorola) work up to a dose of 10 lz n/cm z only and are completely destroyed after a dose of 1014 n/cm 2. The FET input operational amplifiers /~A 7 4 0 C (Fairchild) tolerate doses up to 1013 n/cm 2 without degradation, but after a dose of 1014 n/cm 2, they all failed. In the course of irradiation tests, different TeledynePhilbrick operational amplifiers were also employed and submitted to a radiation dose of 8 x 1013 n/cm 2. None of the 20 operational amplifiers survived. The operational amplifier 1319, an equivalent to the type 741 operational amplifier, failed at the first test dose of 8 x 1013 n/cm 2. The operational amplifier 1303, an equivalent to the type 709 operational amplifier and the operational amplifier 1420 with FET inputs also failed after 8 x 1013 n/cm 2. The discrete operational amplifiers were somewhat more resistant than the integrated versions, but nevertheless they failed after a dose of 8 x 1013 n/cm 2. Five samples of a 10-bit digital-to-analog converter Teledyne/Philbrick 4022 were irradiated. The current output still worked after a dose of 1013 n/cm 2 : however, after a dose of 1014. n/cm 2, all converters 4022 were destroyed.

5.2. ACCELERATOR IRRADIATIONS The gain of the wide band rf-ampl(fiers type HP 35002A remains stable until 1 × 106 Rad. According to specifications, the variation of the gain for the frequency band of 0 . 1 - 4 0 0 M H z is _+0.5 dB, whereas Rossi 1o) and Jakob 11) have measured between 10 and 400 MHz, a variation of + 1 dB after a dose of 106 Rad. Maximum output voltage and power consumption remain stable. For the second type of wide-band if-amplifier Aventek G D P 401/2/3, 5 4 0 0 MHz, the gain remains remarkably stable between 10 and 200 MHz. At 10 6 the decrease is 3.5% only. For 400 M H z a decrease of 25% was measured. The reflection coefficient at 200 M H z and the power consumption remain unchanged. In the 10 MHz quartz oscillator the frequency variation at 10 6 Rad is less than + 2 0 Hz. The output voltage decreases slightly ( ~ 5%). The mixer (Summit 1301) has been irradiated up to 3 x 105 Rad. We measured a minimum L O - R F isolation of 52 dB (40 is specified by the supplier) and a LO-IF isolation of 4 0 d B (against 35 dB specified). The reflection coefficient for the RF input remains unchanged. For the coaxial detector HP 8471A an important

increase of output voltage for constant input power was observed at a dose of 6 x 104 Rad. This increase is more important at low input levels: Vout= + 7 5 % for 0.1 mWin, + 3 6 % for 1 roW, + 2 5 % for 10 mW and + 2 1 % orf 100 roW. The d(fferential amplifier designed by Rossi TM) with discrete components, had in the input stage different types of transistors: a) matched bipolar transistor pairs: 2C 415, 2N 2060, and 2N 4044; b) field effect transistors: E400 and E420. All circuits work well up to 1 x 104 Rad; above that dose a fast destruction of the bipolar transistors starts. The input current of the bipolar transistors increases by a factor of 10 at 5 x 104 Rad and a factor of 30 at about 105 Rad. On the other hand, the field effect transistors resist much better to radiation; the input current increases by a factor of 2 only at 3 x 10s Rad. In the output stage 3 bipolar transistors were used, namely types BC 107 B, 2N 2219A and 2N 2905A. The output power capability of the irradiated amplifiers depends on the reduced current gain factor fl, which goes down by irradiation after a dose of 105 Rad, the maximum output voltage being 50% of the initial value. Of the integrated operational ampl(fi'er we tested: 5 samples /tA 744 Fairchild, radiation-resistant monolithic chip with dielectric isolation, 5 samples 1321 Teledyne/Philbrick, monolithic chip with FET input, 1 sample 1407 Teledyne/Philbrick, hybrid circuit with FET input and with thin-film resistors, 4 samples HS 0778-2R Harris, radiation-resistant monolithic chip with dielectric isolation. For the radiation-resistant/2A 744 the input current stays stable up to 3 x 105 Rad; the maximum output voltage diminishes by about 30%. The bandwidth remains stable up to 3 x 104 Rad and decreases by 50% at 3 x 105 Rad. The input current for the Teledyne/Philbrick 3121 remains stable up to about 3 x 104 Rad; above this dose a rapid increase occurs. The maximum output voltage reduces by 20% at l x 105 Rad. After a dose of 3 x 105 Rad 2 samples are broken and 3 other samples are heavily damaged. For the Teledyne/Philbrick 1407 the input current and the output voltage remain unchanged up to 3 x 105 Rad. The bandwidth decreases by 40%. For the radiation-resistant Harris HS 0778-2R the output voltage and bandwidth remain unchanged up to 3 x 105 Rad. The input current increases by a factor of 2.

RADIATION

DAMAGE

TO

ELECTRONIC

469

COMPONENTS

Table 7 Summary

of

radiation

damage

to

electronic

components

irradiated

in

the

reactor

Exposure dose in n/cm 2 (E > 1 MeV), rad(C~l) a)

No.

Qty.

Designation

Type

Fig.

1

15

Resistor

carbon

1 k~, 5%

4

2

15

"

metal film

1 k~, 1%

S

3

15

"

wirewound

I00 ~, 5%

6

4

IS

"

potmeter c e m e t

1 k~, 78P

7

5

15

ceramic

20 nF, 30 V

II

i0 '2 n/cm 2

1013 n/era~

i0 ~

3 x 103 rad

3 x 10 ~ rad

3 × l0 s rad

I m

n/cm ~

I0 ~s n / ~ 2 3 × 106 rad

~

m

~

m

i

Capacitor

6

15

"

mica

22 pF, 300 V

I0

7

15

"

polyester

15 nF, 125 V

12

8

15

"

polycarbormte

iS nF, 250 V

13

9

15

"

~[L

0.22 ~F, I00 V

I0

15

"

A1 electrolytic

200 ~F, 10 V

II

15

"

tantalum

15 uF. 20 V

12

15

Si, rectifier

I0 D 6

15

Si, general purpose

IN 914

16

Si,

BAY 72

17

Si, hot carrier

HP 2900

18

13

15

14

15

15

15

Diode "

"

"

8 14 9

16

15

"

Si, Zener

ZF 6, 8

19, 20

17

15

"

Ge, t u n n e l

IN 3717

21, 22

18

15

Si, NPN

2N 918

23

19

5

"

Si, PNP, rad. res.

2N 5332

24

20

5

"

Si,

~

25

21

15

22

15

23

15

24

15

25

15

Transistor

"

" Integrated

!'

"

4261 H

Si, FET, N-channel

2N 3819

26

Si, FET, P-channel

2N 3820

27

MDSFET, P-channel

3N 165

28

MDSFET, N-channel

BSV 81

29

qTL gate

S~l 7400 N

30

26

15

"

flip-flop

SN 7 4 7 3 N

31

27

15

"

counter

SN 7493 N

32

one-shot

SN 74121 N

33

gate

MC 3000 P

flip-flop

MC 3055 P

28

15

29

15

. . . .

30

15

"

31

5

"

32

5

"

"

RSN 55910

op. "

RSN 52709

"

amplifier, rad. res.

I

iiiiiiiii~i~i~iii~i~i~iii~i~ii~ii~i~iii~iiiii~iii~i!~iii~iiiiiiiii~iii~i~i~iiiiiiiii~iiiiiii!!;ii~i~i~iiiii!~ ~iiiii~iidiiiiiiiiiiiii~iii~iiiiiiiiiiiiiiiiiiiiiiiiiiiiiil ~iiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiii!i!iiiii!

~iCi!i!iiiii!iiiiiiiiiiiii!iiiiiiili!~iiiiiiii!iiiiii!i! ii~ii!i~iiiiii!i!i!~i~i!i!ii

:;~:;::iiiiii!ii!iiiiiiiiiii2121ii!!i!riiiiiiiiii

[ii!iii!ii2!!iiiii!iii;iiii~ii[i2!~!!!i!!iiiigi1~ii~?2~;i~!~irig2i~!i!!iii;ii~i~i~!i~!,

RSN 55900

I~iiiiiii2i~<:iiiiiii
33

5

"

34

5

"

"

"

35

5

"

"

"

, FET input

uA 740

36

15

"

"

"

, gen. purp.

MC 1741

36-39

37

15

"

comparator

SN 72710

34, 35

38

5

"

op. amplifier

T 1303

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39

5

.

.

.

T 1319

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40

5

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.

.

41

5

Discrete

42

5

Converter digital-to-anal, i0 bits

T 4022

43

5

Se rectifier

B 250 C75

IJA 744

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a)

.

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. ' FET input

op. amplifier

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T 1420

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T 1024

40, 41

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.........

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Conversion factor I0 ~3 n/cm 2 (E > 1 MeV) = 3 × I0 ~ rad(CH)

Stable

Damaged

Broken

470

s. BATTISTI et al. Table 8

Summary of radiation damage to electronic circuits irradiated under tension near an accelerator

Exposure dose i n rad(RPL)

Qty.

Type

Device

10 4

2 2

"

3 x l0 s

10 6

"

Quartz oscillator

2

Mixer

i

Coaxial detector

6

Differential amplifier

5

l0 s

Wide-band RF amplifier

1

4

3 x 10 4

11

i!

Operational amplifier

1

tT

tt

5

TT

II

4

1!

1!

1

Voltage/freq. converter

2

Power supply

Stable

A voltage-to-frequency converter (4701, 10kHz), which shows minor changes at an irradiation dose of 104 Rad is, however, completely destroyed at 2 x 104 Rad. The same effects were observed on a type 3329 (100 kHz). Power supplies have been irradiated under 50% of their maximal load. On a +15 V supply the voltage drop was < 1 0 m V before irradiation for output currents between 0 and 560 mA; at 4 x 10 4 Rad this value increased up to ~ 70 mV. For a 15 V/2 A supply of another type the voltage drop for output currents between 0 and 1 A was 3 mV before irradiation and 10 mV after 7 x 104 Rad. 6. Summary of results We summarize schematically in table 7 the results

Damaged

Broken

of reactor irradiation and in table 8 those for accelerator irradiation obtained in the present study; table 9 shows the general tendency of the effects of radiation on electronic components. We would like to thank A. Burtscher and J. Casta for their helpful collaboration in carrying out the irradiations in the reactor centre in Seibersdorf, Austria, as well as for their comments on the section about dosimetry in this report. H. Jakob, E. Marcarini, H. Rossi and V. Rossi have carried out the electronic measurements and participated in the data evaluation. P. Beynel was responsible for the dosimetry of the ISR irradiations. Their valuable assistance was very much appreciated. We would also like to thank K. Goebel for his sup-

RADIATION DAMAGE TO ELECTRONIC COMPONENTS

471

Table 9 Sensitivity of electronic components to fast reactor neutron, 6°Co-gamma, and 3 MeV electron radiation

Damage and u t i l i t y

Components

Piezo-electrical crystals

Magnetic m a t e r i a l s

Inorganic insulation

Resistors

Capacitors

Electron tubes

Transducers

I I

Organic insulation

Semiconductors

I

neutrons/cm = rad y-radiation electrons/Qu 2

I

101°

I

10 2 l0 B

I

I

1012 10" i0 ~0

I

10 I.

I

10 6 i012

f

I

I

I

10 le

1016

10 lo

10 8 10 I.

i016

Damage

I

102o

I

i 0 I~ i 0 Is

I

1022

10 ~ I 0 )~

i 0 2o

I 0 ~2

Utility

Incipient to mild

Nearly always usable

Mild to moderate

Often s a t i s f a c t o r y

Moderate to severe

Limited use

472

s. B A T T I S T I et al.

port of this investigation as well as for his many useful suggestions. We acknowledge the useful comments we received, during various discussions at C E R N with L. Burnod, M. C. Crowley-Milling, K. Lambert, J. Madsen and B. Moy. Finally we would like to acknowledge the special care taken by the CERN Scientific Reports Typing Service.

References 1) K. P. Lambert, H. Sch6nbacher and M. Van de Voorde, A comparison o f radiation damage o f electronic components irradiated in different radiation fields, Nucl. Instr. and Meth. 130 (1975) 291; and C E R N 75-4 (1975). 2) K . P . Lambert, H. Sch~nbacher and M. Van de Voorde, Proc. Int. Conf. on Evaluation o f space environment oll materials, Toulouse, 1974 (CNES, Toulouse, 1974) p. 153. 3) H. Sch6nbacher, M. Van de Voorde, A. Burtseher and J. Casta, Kerntechnik 17 (1975) 268.

4) A. Burtscher and J. Casta, in Neutron irradiation o f seeds, I A E A Techn. Report Series No. 76 /IAEA, Vienna, 1967) p. 41. 5) M . H . Van de Voorde, Megarad dosimetry, CERN 69-12 (1969). 6) G. Ahnstr6m, A. Burtscher and J. Casta, in Neutron irradiation o f seeds, I A E A Techn. Report Series No. 76 (IAEA, Vienna, 1967) p. 87. v) K. P. Lambert and M. H. Van de Voorde, Int. J. Appl. Rad. Isotopes 25 (1974) 69. 8) S. Charalambus, J. Dutrannois and K. Goebel, Particle flux measurements with activation detectors, Internal Report C E R N / D I / H P 90 (1966). 9) j. T. Routti, M. Van de Voorde and M. H~Sfert, Fluence and dose measurements with activation and spallation detectors near internal targets at the C E R N Proton Synchtrotron, Internal Report C E R N ISR-MA/71-29 (1971). ~o) H. Rossi, Tests d'irradiation de circuits 61ectroniques, C E R N Lab. ll-CO/BM/lnternal Note/H R/73-49 (1973). 1) H. Jakob, Tests d'irradiation de circuits 61ectroniques, C E R N Lab. ll-CO/BM/Internal Note/H J/71-1 (1975).