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Radiation impedance approach to the analysis of a thin film inductor in a microwave integrated circuit
ABSTRACTS ON M I C R O E L E C T R O N I C S AND R E L I A B I L I T Y
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distribution along the channel. It is shown that by proper manipulation of the second gate, characteristic curves ranging from the normal T F T "pentode" curves to "triode" curves can be obtained from the same device. A comparison is given of experimental and theoretical results.
A compatible patterning technique for custom built thin and thick film circuits. W. L. CLOUOH, Electron. Equip. Netos, June (1967), p. 4. Advantages and disadvantages of photolithographic and screen printing techniques in microfilm circuit production are discussed, with a description of an automatic production scale screen printing process. Recent developments in thick-film hybrid modules. E. H. MELAN,SCP Solid St. TechnoL, June (1967), p. 23. Certain aspects underlying the flexibility of thick film hybrid technology are discussed. namely speed, circuit and power density, and versatility. Although recent examples df these aspects are described in terms of the IBM Solid Logic Technology, other approaches to fabricating thick film circuits are certainly not precluded. Modules described include: (a) a high-speed current-mode switch, (b) a controlled gain, wide bandwidth amplifier, (c) high component density substrates, (d) power transistor and resistor modules, (e) stenciled delay lines, and (f) a module designed for space applications. The illustrated flexibility has kept hybrid thick film technology competitive in the microelectronics field. Radiation impedance approach to the analysis of a thin film inductor in a m i c r o w a v e integrated circuit. E. YAMASmTAand R. MITTRA. IEEE Jl Solid-St. Circuits SC2, No. 2, June (1967), p. 47. The radiation resistance and reactance of a thin film inductor in a microwave integrated circuit are evaluated by a Fourier transform technique. The results are useful in designing circuits with reduced radiation coupling of the inductor with adjacent elements. Numerical results are presented for various ranges of parameters. Properties o f insulating thin films deposited by R. F. sputtering. W. A. PLISKIN,P. D. DAVIDSE, H. S. LEHMANand L. I. MAISSEL,IBMa% July (1967), p. 461. The use of R.F. sputtering for the deposition of thin insulating films at relatively low temperatures (50 ° to 500°C) has been shown to yield films of very high quality. Methods for investigating the properties of R.F.-sputtered films are discussed in detail, and these indicate that such films are excellent stable insulators. Potential utility as an encapsulant for transistor structures has been demonstrated. Data for R.F.-sputtered SiO~ and GSC-1 (an alumina borosilicate glass) are presented as examples of the properties obtained by this technique. Galvanomagnetic Thin F i l m devices. H. FRELLERand K. G. GUNTHER,Radio Electron. Engr, August (1967), p. 97. Thin films of InAs and InSb directly evaporated on to substrates, such as glass, ceramics or ferrite, have interesting properties which make them suitable for galvanomagnetic devices as Hall probes or magneto resistors. The reasons for this are as follows: the Hall-sensitivity increases with decreasing thickness of the semiconducting layer. The higher inner resistance of thin films facilitates matching of the device to a particular circuit. Directly evaporated layers have a better heat dissipation factor than thin slices cemented to a substrate. Suitable methods of producing stoichiometric thin films of InAs and InSb with mobilities comparable to bulk material values are the flash-evaporation techniques and the three-temperature method. As the mobility shows a strong dependence on the crystallite size of the polycrystalline films, recrystallization techniques were subsequently applied to InSb films. This treatment results in larger crystallite sizes and mobilities of up to 30,000-40,000 cm~/V. The properties of thin film devices are discussed with special regard to Hall probes. The average values of mobility and Hall coefficient versus temperature and the resulting characteristics such as Hall-sensitivity, inner resistance, control current and temperature coefficient, are discussed with reference to several typical devices. New thin-film resistive memory. J. G. SIMMONSand R. R. VERDERBER.Radio Electron. Engr, August (1967), p. 81. A new thin-film metal-insulator-metal device is described. After the insulator has undergone a forming process, which consists of the electrolytic introduction of gold ions from one of the electrodes, its conductivity is observed to have increased quite markedly. In addition the sample displays
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distribution along the channel. It is shown that by proper manipulation of the second gate, characteristic curves ranging from the normal T F T "pentode" curves to "triode" curves can be obtained from the same device. A comparison is given of experimental and theoretical results.
A compatible patterning technique for custom built thin and thick film circuits. W. L. CLOUOH, Electron. Equip. Netos, June (1967), p. 4. Advantages and disadvantages of photolithographic and screen printing techniques in microfilm circuit production are discussed, with a description of an automatic production scale screen printing process. Recent developments in thick-film hybrid modules. E. H. MELAN,SCP Solid St. TechnoL, June (1967), p. 23. Certain aspects underlying the flexibility of thick film hybrid technology are discussed. namely speed, circuit and power density, and versatility. Although recent examples df these aspects are described in terms of the IBM Solid Logic Technology, other approaches to fabricating thick film circuits are certainly not precluded. Modules described include: (a) a high-speed current-mode switch, (b) a controlled gain, wide bandwidth amplifier, (c) high component density substrates, (d) power transistor and resistor modules, (e) stenciled delay lines, and (f) a module designed for space applications. The illustrated flexibility has kept hybrid thick film technology competitive in the microelectronics field. Radiation impedance approach to the analysis of a thin film inductor in a m i c r o w a v e integrated circuit. E. YAMASmTAand R. MITTRA. IEEE Jl Solid-St. Circuits SC2, No. 2, June (1967), p. 47. The radiation resistance and reactance of a thin film inductor in a microwave integrated circuit are evaluated by a Fourier transform technique. The results are useful in designing circuits with reduced radiation coupling of the inductor with adjacent elements. Numerical results are presented for various ranges of parameters. Properties o f insulating thin films deposited by R. F. sputtering. W. A. PLISKIN,P. D. DAVIDSE, H. S. LEHMANand L. I. MAISSEL,IBMa% July (1967), p. 461. The use of R.F. sputtering for the deposition of thin insulating films at relatively low temperatures (50 ° to 500°C) has been shown to yield films of very high quality. Methods for investigating the properties of R.F.-sputtered films are discussed in detail, and these indicate that such films are excellent stable insulators. Potential utility as an encapsulant for transistor structures has been demonstrated. Data for R.F.-sputtered SiO~ and GSC-1 (an alumina borosilicate glass) are presented as examples of the properties obtained by this technique. Galvanomagnetic Thin F i l m devices. H. FRELLERand K. G. GUNTHER,Radio Electron. Engr, August (1967), p. 97. Thin films of InAs and InSb directly evaporated on to substrates, such as glass, ceramics or ferrite, have interesting properties which make them suitable for galvanomagnetic devices as Hall probes or magneto resistors. The reasons for this are as follows: the Hall-sensitivity increases with decreasing thickness of the semiconducting layer. The higher inner resistance of thin films facilitates matching of the device to a particular circuit. Directly evaporated layers have a better heat dissipation factor than thin slices cemented to a substrate. Suitable methods of producing stoichiometric thin films of InAs and InSb with mobilities comparable to bulk material values are the flash-evaporation techniques and the three-temperature method. As the mobility shows a strong dependence on the crystallite size of the polycrystalline films, recrystallization techniques were subsequently applied to InSb films. This treatment results in larger crystallite sizes and mobilities of up to 30,000-40,000 cm~/V. The properties of thin film devices are discussed with special regard to Hall probes. The average values of mobility and Hall coefficient versus temperature and the resulting characteristics such as Hall-sensitivity, inner resistance, control current and temperature coefficient, are discussed with reference to several typical devices. New thin-film resistive memory. J. G. SIMMONSand R. R. VERDERBER.Radio Electron. Engr, August (1967), p. 81. A new thin-film metal-insulator-metal device is described. After the insulator has undergone a forming process, which consists of the electrolytic introduction of gold ions from one of the electrodes, its conductivity is observed to have increased quite markedly. In addition the sample displays