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Recent developments in X-ray lithography systems
MicroelectronicEngmeering5(1986) 597 No~h-Ho~and
597
RECENT DEVELOPMENTSIN X-RAY LITHOGRAPHY SYSTEMS C.R. Fencil Microlithography Division The Perkin-Elmer Corporation Norwalk, Connecticut
06859-0275 USA
ABSTRACT High resolution, high throughput x-ray lithography systems are being developed to meet future needs for submicron integrated c i r c u i t fabrication. An advanced step-and-repeat x-ray system, under development at the Perkin-Elmer Corporation, is described. The c r i t i c a l technologies, precision alignment and high-power x-ray source, are explored. To achieve half-micron or better resolution, overlay accuracy of at least 0.1 micron is required. This is achieved by a proximity system that controls alignment in six degrees of freedom on a f i e l d - b y - f i e l d , real-time basis. Alignment techniques are described and overlay measurements presented for Boron Nitride mask-to-wafer levels. The demands placed on the x-ray source are great. High power is required to achieve practical levels of throughput, and a f i n i t e x-ray emitting area is required to achieve a small penumbra blur. The source developed achieves a system resolution of 0.2 micron or less, with a throughput of 40 wafer levels per hour. Experimental results on this source are shown.
0167-9317/86/$3.50 © 1986, Elsevier Science Publishers B.V. (North-Holland)
597
RECENT DEVELOPMENTSIN X-RAY LITHOGRAPHY SYSTEMS C.R. Fencil Microlithography Division The Perkin-Elmer Corporation Norwalk, Connecticut
06859-0275 USA
ABSTRACT High resolution, high throughput x-ray lithography systems are being developed to meet future needs for submicron integrated c i r c u i t fabrication. An advanced step-and-repeat x-ray system, under development at the Perkin-Elmer Corporation, is described. The c r i t i c a l technologies, precision alignment and high-power x-ray source, are explored. To achieve half-micron or better resolution, overlay accuracy of at least 0.1 micron is required. This is achieved by a proximity system that controls alignment in six degrees of freedom on a f i e l d - b y - f i e l d , real-time basis. Alignment techniques are described and overlay measurements presented for Boron Nitride mask-to-wafer levels. The demands placed on the x-ray source are great. High power is required to achieve practical levels of throughput, and a f i n i t e x-ray emitting area is required to achieve a small penumbra blur. The source developed achieves a system resolution of 0.2 micron or less, with a throughput of 40 wafer levels per hour. Experimental results on this source are shown.
0167-9317/86/$3.50 © 1986, Elsevier Science Publishers B.V. (North-Holland)