Microelectronics and Reliabilit). Vol. 17. pp. ,409 to 412. Pergamon Press, 1978. Printed in Great Britain
lq E C E N T P A T E N T S ON MICR O E L E...
Microelectronics and Reliabilit). Vol. 17. pp. ,409 to 412. Pergamon Press, 1978. Printed in Great Britain
lq E C E N T P A T E N T S ON MICR O E L E C T R O N I C S P a t i n e t e l L i m i t e d p e r u s e a p p r o x i m a t e l y 900 U n i t e d K i n g d o m p a t e n t s e a c h w e e k and s u p p l y a h i g h - s p e e d p a t e n t a l e r t i n g s y s t e m to e l e c t r o n i c s u s e r s . The following brief abstracts on m i c r o e l e c t r o n i c s h a v e b e e n s e l e c t e d f r o m t h e i r w e e k l y b u l l e t i n a n d a r e p u b l i s h e d by c o u r t e s y of P a t i n t e l L i m i t e d , 13 N o r t h A v e n u e , G o s f o r t h , N e w c a s t l e on T y n e NE3 4DT.
F i l m Circuits:
Descrl p__tion_
Patentee
Date
Number
5/1/78
1496994
Thick film paste including a base metal powder, boron powder, and a liquid vehicle
Engelhard Mineral & Chemicals Corpn.
12/1/78
1497583
Thin film circuit including a first resistive f i l m w i t h c o n d u c t i v e c o n t a c t s t h e r e o n and a s e c o n d r e s i s t i v e f i l m o v e r l y i n g a r e a s of t h e f i r s t f i l m and the conductive film
Standard Telephones & Cables Ltd.,
1497586
Process for monitoring surface resistivity d i s t r i b u t i o n of v a c u u m d e p o s i t e d m e t a l s
Sierracin Corpn.
Z5/I/78
1498637
Circuit assembly including a ceramic or glass s u b s t r a t e w i t h f i l m e l e m e n t s t h e r e o n and p r o v i d e d with contact e l e m e n t s having opposed s p a c e d a p a r t f l a n k s e m b r a c i n g one edge of t h e substrate
S i e m e n s AG.
1/2/78
1499364
Vaporising crucible for v a c u u m vapour deposition equipment
Leybold Heraeus V e rwaltung GmbH
1499965
Passive microcircuit including a metal substrate with a dielectric layer of the metal thereon, circuit elements being deposited on the dielectric layer
G. G. S m o l k o and others
1500414
Crucible for use in the v a c u u m deposition of thin films
Xerox Corpn.
8/Z/78
Semiconductors and Devices: .
.
.
.
.
.
.
.
5/1/78
12/1/78
18/1/78
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
1496814
S e m i c o n d u c t o r device and p a r t i c u l a r l y f e a t u r e s of a p a s s i v a t i n g p o l y c r y s t a l l i n e s i l i c o n l a y e r
Sony C o r p n .
1497191 1497192 1497193
B o r o n d o p i n g of s e m i c o n d u c t o r s
Owens -Illinois Inc.
1497199
M e t h o d of f o r m i n g a r e c e s s e d s i l i c o n d i o x i d e i s o l a t i o n r e g i o n in a m o n o c r y s t a l l i n e s i l i c o n body
I B M Corpn.
1497457
M e t h o d of c a r r y i n g out l i q u i d p h a s e e p i t a x i a l g r o w t h f o r t h e m a n u f a c t u r e of a s e m i c o n d u c t o r device
Nippon Telegraph & Telephone Public Corpn.
1497499
P r o c e s s f o r p r o d u c i n g a d i e l e c t r i c r e g i o n in t h e s u r f a c e of a s i l i c o n s u b s t r a t e
IBM Corpn.
1497566
A p p a r a t u s f o r n o n - c r u c i b l e low m e l t i n g of crystalline semiconductor rod
S i e m e n s AG.
1497626
I n s u l a t e d gate field effect t r a n s i s t o r
IBM Corpn.
1498085
I m p r o v e d i n d u c t i o n h e a t i n g coil f o r n o n - c r u c i b l e z o n e m e l t i n g of s e m i c o n d u c t o r r o d s
S i e m e n s AG.
409
410
2511178
112178
Recent Patents on Microelectronics 1498096
M e t h o d of f o r m i n g a r e s i n f i l m on a s e m i c o n d u c t o r b o d y f o r s t a b l i s i n g t h e s u r f a c e of t h e s e m i conductor device
Hitachi Ltd.
1498159
M e t h o d of m a n u f a c t u r i n g a s e m i c o n d u c t o r d e v i c e particularly a bipolar transistor with reduced p r o b l e m of p h o t o m a s k a l i g n m e n t
Yanushoni s, S. S. Bel Y a u s k a s and others
1498266
Method for producing purified silicon material for semiconductor devices
Texas Instruments Ltd.
1498288
M e t h o d of p r e p a r i n g cadmium telluride
F i z - T a k h Inst I m Af loffe Akad Nauk SSSR
1498326
Thyristor particularly having a semiconductor e l e m e n t w i t h f o u r z o n e s of a l t e r n a t i n g c o n d u c t ivity type
Siemens AG.
1498374
Cadmium telluride semiconductor
Commissariat a L'Energie Atomique
1498459
Growing semiconductor
1498925
M e t h o d of m a n u f a c t u r i n g s e m i c o n d u c t o r d e v i c e s b y p r o v i d i n g a l a y e r of s e m i c o n d u c t o r m a t e r i a l o n a s o l i d s u b s t r a t e b y s o l i d i f i c a t i o n of m o l t e n semiconductor material
Phiiips Electronic & Assoc. Industries Ltd.
1498928
Process for unsoldering a semiconductor in the flip-chip technique
Siemens
1499030
M e t h o d of b o n d i n g a m e t a l a r t i c l e h a v i n g a c o p p e r s u r f a c e l a y e r to a g l a s s a r t i c l e a n d a p p l i c a b l e i n t h e e n v e l o p i n g of s e m i c o n d u c t o r di ode s
Philips Electronic & Assoc. Industries Ltd.
1499090
Insulated gate field effect transistor manufacture
IBM
1499267
Voltage controlled resistance two field effect transistors
1499289
Apparatus for growing a ribbon of crystalline silicon f r o m a melt
IBM Corpn.
1499455
M e t h o d and circuit a r r a n g e m e n t for propagating potential inversion wells in semiconductor bodies
IBM
1499490
P r o c e s s for polishing semiconductor
Wacker
doped s i n g l e c r y s t a l s
single crystal
of
intrinsic
epitaxial film
Phizi Inst. ImPN Lebedeva Akad N a u k SSSR
module
and
incorporating
surfaces
AG.
Corpn.
International Standard Electric Corpn,
Corpn. -
Chemitronic Ges Fur Elektr onik G r u n d -Stoffe MBH 1499548
Gomplementary insulated gate field effect transistor structure and process for fabrication
Fairchild Camera & In strument Corpn.
1499561
Semiconductor heterojunction m e t h o d of f a b r i c a t i o n
University of Connecticut
structure
and
411
Recent Patents on Microelectronics
812178
1512178
22/2/78
1499847
M e t h o d of s e l e c t i v e l y r e m o v i n g m a t e r i a l f r o m t h e s u r f a c e of a w o r k p i e c e , s u c h a s a s e m i conductor w a f e r , b y sputter etching
Western Electric Co. Inc.
1499848
Recessed oxide n-channel and fabrication
IBM Corpn.
1499857
Method and arrangement for plasma etching a l u m i n i u m f i l m s c a r r i e d on s o l i d s u b s t r a t e s , eg. in semiconductor processing
Standard Telephones & Cables Ltd.
1499889
High frequency semiconductor p a r t i c u l a r l y a p a c k a g e f o r it
R C A Corpn.
1500238
Masing layer for a semiconductor m e t h o d of p r o v i d i n g it
1500325
Localised ballasting such as transistors,
1501114
M e t h o d of e t c h i n g s i l i c o n i n a c o n t r o l l e d m a n n e r f o r m a k i n g a patterned p o l y c r y s t a l l i n e silicon layer in a semiconductor device
R CA Corpn.
1501158
P r o c e s s f o r t h e p r o d u c t i o n of a m u l t i l a y e r structure in semiconductor chips
Siemens
1501187
Lead frame
Tokyo Shibaura Electric Co. Ltd.
1501194
Photoresist process applicable for use in processing semiconductor wafers
IBM Corpn.
1501245
Method of gettering contaminants in a silicon body in semiconductor processing
IBM Corpn.
1501249
Field effect transistor
I B M Corpn.
1501477
Method for removing copper contaminant semiconductor surfaces
1501020
M e t h o d of m a n u f a c t u r i n g a s e m i c o n d u c t o r c o m p o n e n t a n d p a r t i c u l a r l y m o u n t i n g of a s e m i c o n d u c t o r d e v i c e on a h e a t s i n k
Texas Instruments Ltd.
1501693
Apparatus for automatically of s e m i c o n d u c t i v e m a t e r i a l
C a n o n K , K.
1502165
Semiconductor device including two semiconductor regions spaced from one another by a distance s m a l l e r t h a n t h e d i f f u s i o n l e n g t h of m i n o r i t y carriers in the first region
Sony Corpn.
1502230
F o r m a t i o n of a c o n d u c t i v e p a t t e r n conductor substrate
IBM Corpn.
1501894
M e t h o d of m a n u f a c t u r i n g
1501896
M e t h o d of m a n u f a c t u r i n g a h i g h p o w e r s e m i conductor device, particularly a transistor structure
IBM Corpn,
1502066
Controllable semiconductor component including two tapered metal bodies with a semiconductor element located therebetween
Siemens AG.
1502087
M e t h o d of p r e p a r i n g a s e m i c o n d u c t o r c o m p o u n d by synthesis and applicable to the preparation of a c r y s t a l l i n e g a l l i u m a r s e n i d e b o d y
Philips Electronic & ASSOC. Industries Ltd.
1502229
P r o c e s s f o r t h e p r o d u c t i o n of a n i n v e r s e l y operated planar transistor in a semi-conductor body
Siemens
field effect transistor
device and body and
of s e m i c o n d u c t i n g d e v i c e s to reduce localised heating
for a semiconductor
device
structure from
orienting a wafer
on a s e m i -
a power transistor
IBM Corpn. R CA Corpn.
AG.
I B M Corpn.
IBM Corpn.
AG.
412
Recent Patents on Microelectronics
I_~_t_~$ _=_~_t~ a_ci_~_¢_~jt ~_2/5/78
1496958
P h o t o r e s i s t e l e m e n t s p e c i a l l y c a p a b l e of f o r m i n g a m e t a l l i c i m a g e a n d a p p l i c a b l e to integrated circuit production
Fuji Photo F i l m Co. L t d .
IZ/I/78
149743Z
Apparatus for producing masks, particularly for integrated circuit manufacture
Thomson-CSF
1497779
M e t h o d of m a k i n g a s e m i c o n d u c t o r i n t e g r a t e d circuit utilising photoreist techniques
IBM Corpn.
1497892
I n t e g r a t e d c i r c u i t of t h e m e r g e d t r a n s i s t o r l o g i c or i n t e g r a t e d i n j e c t i o n l o g i c t y p e
IBM Corpn.
18/i/78
14983Z9
P r o c e s s f o r f o r m i n g a m e t a l p a t t e r n on a substrate for integrated circuit devices
IBM Corpn.
Z5/I/78
1498940
Semiconductor charge transfer device for s t o r i n g or d e l a y i n g a n a l o g u e o r d i g i t a l s i g n a l s
National Research Development Gorpn.
1499Z94
M e t h o d of m a k i n g a m a s k f o r u s e in p h o t o l i t h o g r a p h i c t r a n s f e r of a p a t t e r n by x - r a y s or other radiation, in semiconductor integrated c i r c u i t s and m i n i a t u r e e l e c t r o n i c c o m p o n e n t manufacture
IBM Gorpn.
I/Z/78
1499358
I n t e g r a t e d c i r c u i t p a c k a g e a n d m e t h o d of manufacture
Burroughs Corpn.
8/Z/78
15005Z9
M e t h o d of m a k i n g a p a t t e r n e d e t c h - r e s i s t a n t m a s k a p p l i c a b l e in i n t e g r a t e d c i r c u i t manufacture
IBM Gorpn.
1500 541
M e t h o d of p r o d u c i n g p o s i t i v e w o r k i n g e l e c t r o n resist coatings
M u l l a r d Ltd.
1500606
Electron beam positive resist method
I B M Corpn.
1500959
Arrangement for exposing a light sensitive l a y e r t h r o u g h a m a s k f o r t h e m a n u f a c t u r e of an integrated circuit
I B M Corpn.
1501Z15
Space-charge-limiter circuit
I B M Corpn.
1501Z79
n-scale counter including insulated gate field effect t ransistors
Tokyo Shibaura E l e c t r i c Co. Ltd.
1501483
T e c h n i q u e f o r i s o l a t i n g e l e m e n t s in a s e m i c o n d u c t o r i n t e g r a t e d c i r c u i t f r o m one a n o t h e r during manufacture
Hitachi Ltd.
1501908
A u t o m a t i c p o s i t i o n i n g of i m a g e a n d / o r o b j e c t s u r f a c e s in o p t i c a l a p p a r a t u s u s e d in t h e p r o j e c t i o n c o p y i n g of m a s k s on s e m i c o n d u c t o r wafer s for integrated circuits
I B M Corpn.
150ZIZZ
High voltage, high power integrated semiconductor device
R C A Corpn.
150Z130
Integrated circuit device incorporating complementary field effect t'ransistors