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Recombination dependent characteristics of silicon p+-n-n+ epitaxial diodes
420
WORLD
ABSTRACTS
ON MICROELECTRONICS
field strengths of 2 and 8 kG. T h e current was parallel either to < 111 > or < 1 0 0 > or < 011 > crystallographic directions. T h e results have been found to depend critically on the individual orientations. For current parallel to < 111 > a planar Hall field and a dependence of the Hall data on the sign of B have been found at both ohmic and high electric fields. A theoretical explanation has been given by assuming a Maxwellian energy distribution in each valley. Acoustic intravalley and intervalley as well as ionized impurity scattering have been taken into account by assuming relaxation time tensors. F r o m the energy balance the electron temperatures were determined. T h e valley populations are found to depend strongly on the magnetic field. All qualitative features of the experimental results could be explained.
Determination of l o w energy barriers in m e t a l insulator-metal tunneling junctions. K. H. GUNI)LACH. Solid State Electron. 15 (1972), p. 329. Previous evaluations of the logarithmic derivative d/d V(ln J ) of the tunnel current J with respect to voltage V for M I - I M 2 junctions are extended to models having extremely low metal-insulator energy barriers. It is shown that also in these cases the quantity d / d V ( l n J ) can exhibit pronounced maxima at voltages corresponding approximately to the metal-insulator barrier heights ~51 and ~ of the junction. T h i s result could be of interest in relation to tunneling through so-called artificial barriers where the investigation of the voltage and the temperature dependence of the current indicate in some cases very low energy barriers.
AND
RELIABILITY
Wepi can be uniquely determined using the given theoretical curves.
N e w growth: silicon on sapphire. A. ROSENIII.:¢r'I Electronics, April (1972), p. 77. Tecbnology, gainin~ new impetus, offers high speed, low power demand, high packing density and high resistance to radiati(m
The dielectric constant and p l a s m a frequency of p-type Ge-like semiconductors. M. COMBESCOT and P. NOZlERES. Solid State Commun. 10 (1972), iv, 301, T h e interband transitions in the valence band affect noticeably the D r u d e - Z e n e r usua] formula for the dielectric constant and the plasma frequency in the cast: of a p-type Ge-like semiconductor. T h e trapping of holes in acceptor sites is discussed and limits the observability of this effect.
An investigation of carrier transport in thin siliconon-sapphire films using MIS deep depletion Hall effect structures. A. B. M. ELI.IOT and J. C ANDERSON
Solid State Electron. 15 (1972), p. 531. A deep depletion M I S structure has been used to obtaia measurements of the carrier concentration and mobility variations through thin epitaxial films (0"6-2 v.m) of n-type silicon on sapphire substrates. Both the mobility and the net donor concentrations decrease in the direction of the sapphire interface. T h e room temperature mobility in the material close to the sapphire interface is shown to be limited by scattering at charged defects, but i~ accumulation layers adjacent to the oxide interface a phonon scattering limitation is obserxed and a large proportion of the oxide interface scattering is shown t:) Density of states of superconductors with overlapping bands. I. I. FALK'KO and V. L. FAL'KO. Solid be specular. U n d e r certain conditions shallow donor states can be generated at the sapphire interface in State Commun. 10 (1972), p. 409. Interband pairing densities of the order of 10 lz cm -°'. A new technique fillbetween electrons in a two-band superconductor leads measuring the energy distribution of fast interface states to the formation of a density of states which is characat the oxide interface in a film with non-uniform dopin~ terized by four singularities vs energy. is described. T h e energy distributions obtained on the. Recombination dependent characteristics of sili- silicon-on-sapphire films investigated in the present con p+-n-n + epitaxial diodes. K. VENKATESWARAN work are very similar to those obtained in bulk sillco~J by earlier workers. and D. J. ROULSTON. Solid State Electron. 15 (1972), p. 311. T h e low-level injection d.c. and transient characSpecific contact resistance of o h m i c contacts to teristics of a p+-n-n + diode are discussed from a g a l l i u m arsenide. W. D. EDWARDS, \V. A. HARTMAN theoretical point of view, using the minority carrier lifeand A. B. TORRENS. Solid State Electron. 15 (1972), time Vepi in the lightly doped region and the parameter p. 387. Values of specific contact resistance Rc have been defining the properties of the high-low junction, as obtained for Sn, Sn: Ag, and Au: Go: Ni contacts to basic parameters. A value of a less than unity is predicted N-type gallium arsenide of resistivity 0.4 to 30 f2ctr;. for typical epitaxial silicon structures. Detailed experimental studies involving both lifetime m e a s u r e m e n t s A n approximate relationship Re o: l / N , where N is the bulk carrier concentration, was shown to apply. ']'he (using optical techniques) on the original epitaxial layer relationship between the value of Re and the contact and substrate and d.c. plus transient m e a s u r e m e n t s on structure is discussed. It is pointed out, in particular, completed devices confirm the existence of a "blocking" that Ro may be negative when its usual phenomenolo~ical high-low junction (~ less than unity). However, the definition is used. measured value of ~ is still considerably higher than that predicted from the theory, thus indicating conThe influence of phase boundary reactions on the clusively the presence of additional recombination diffusion during double conversions in solid state. m e c h a n i s m s at the high-low junction interface. A n V. LEUTE and A. KALB. J. Phys. Chem, Solids 33 (1972), interesting and useful result of the study is the fact that using a combination of d.c. and transient m e a s u r e m e n t p. 417. In this paper the influence of the affinity of a phase boundary, reaction on the whole diffusion process techniques, both ~ and the effective epitaxial layer width
WORLD
ABSTRACTS
ON MICROELECTRONICS
field strengths of 2 and 8 kG. T h e current was parallel either to < 111 > or < 1 0 0 > or < 011 > crystallographic directions. T h e results have been found to depend critically on the individual orientations. For current parallel to < 111 > a planar Hall field and a dependence of the Hall data on the sign of B have been found at both ohmic and high electric fields. A theoretical explanation has been given by assuming a Maxwellian energy distribution in each valley. Acoustic intravalley and intervalley as well as ionized impurity scattering have been taken into account by assuming relaxation time tensors. F r o m the energy balance the electron temperatures were determined. T h e valley populations are found to depend strongly on the magnetic field. All qualitative features of the experimental results could be explained.
Determination of l o w energy barriers in m e t a l insulator-metal tunneling junctions. K. H. GUNI)LACH. Solid State Electron. 15 (1972), p. 329. Previous evaluations of the logarithmic derivative d/d V(ln J ) of the tunnel current J with respect to voltage V for M I - I M 2 junctions are extended to models having extremely low metal-insulator energy barriers. It is shown that also in these cases the quantity d / d V ( l n J ) can exhibit pronounced maxima at voltages corresponding approximately to the metal-insulator barrier heights ~51 and ~ of the junction. T h i s result could be of interest in relation to tunneling through so-called artificial barriers where the investigation of the voltage and the temperature dependence of the current indicate in some cases very low energy barriers.
AND
RELIABILITY
Wepi can be uniquely determined using the given theoretical curves.
N e w growth: silicon on sapphire. A. ROSENIII.:¢r'I Electronics, April (1972), p. 77. Tecbnology, gainin~ new impetus, offers high speed, low power demand, high packing density and high resistance to radiati(m
The dielectric constant and p l a s m a frequency of p-type Ge-like semiconductors. M. COMBESCOT and P. NOZlERES. Solid State Commun. 10 (1972), iv, 301, T h e interband transitions in the valence band affect noticeably the D r u d e - Z e n e r usua] formula for the dielectric constant and the plasma frequency in the cast: of a p-type Ge-like semiconductor. T h e trapping of holes in acceptor sites is discussed and limits the observability of this effect.
An investigation of carrier transport in thin siliconon-sapphire films using MIS deep depletion Hall effect structures. A. B. M. ELI.IOT and J. C ANDERSON
Solid State Electron. 15 (1972), p. 531. A deep depletion M I S structure has been used to obtaia measurements of the carrier concentration and mobility variations through thin epitaxial films (0"6-2 v.m) of n-type silicon on sapphire substrates. Both the mobility and the net donor concentrations decrease in the direction of the sapphire interface. T h e room temperature mobility in the material close to the sapphire interface is shown to be limited by scattering at charged defects, but i~ accumulation layers adjacent to the oxide interface a phonon scattering limitation is obserxed and a large proportion of the oxide interface scattering is shown t:) Density of states of superconductors with overlapping bands. I. I. FALK'KO and V. L. FAL'KO. Solid be specular. U n d e r certain conditions shallow donor states can be generated at the sapphire interface in State Commun. 10 (1972), p. 409. Interband pairing densities of the order of 10 lz cm -°'. A new technique fillbetween electrons in a two-band superconductor leads measuring the energy distribution of fast interface states to the formation of a density of states which is characat the oxide interface in a film with non-uniform dopin~ terized by four singularities vs energy. is described. T h e energy distributions obtained on the. Recombination dependent characteristics of sili- silicon-on-sapphire films investigated in the present con p+-n-n + epitaxial diodes. K. VENKATESWARAN work are very similar to those obtained in bulk sillco~J by earlier workers. and D. J. ROULSTON. Solid State Electron. 15 (1972), p. 311. T h e low-level injection d.c. and transient characSpecific contact resistance of o h m i c contacts to teristics of a p+-n-n + diode are discussed from a g a l l i u m arsenide. W. D. EDWARDS, \V. A. HARTMAN theoretical point of view, using the minority carrier lifeand A. B. TORRENS. Solid State Electron. 15 (1972), time Vepi in the lightly doped region and the parameter p. 387. Values of specific contact resistance Rc have been defining the properties of the high-low junction, as obtained for Sn, Sn: Ag, and Au: Go: Ni contacts to basic parameters. A value of a less than unity is predicted N-type gallium arsenide of resistivity 0.4 to 30 f2ctr;. for typical epitaxial silicon structures. Detailed experimental studies involving both lifetime m e a s u r e m e n t s A n approximate relationship Re o: l / N , where N is the bulk carrier concentration, was shown to apply. ']'he (using optical techniques) on the original epitaxial layer relationship between the value of Re and the contact and substrate and d.c. plus transient m e a s u r e m e n t s on structure is discussed. It is pointed out, in particular, completed devices confirm the existence of a "blocking" that Ro may be negative when its usual phenomenolo~ical high-low junction (~ less than unity). However, the definition is used. measured value of ~ is still considerably higher than that predicted from the theory, thus indicating conThe influence of phase boundary reactions on the clusively the presence of additional recombination diffusion during double conversions in solid state. m e c h a n i s m s at the high-low junction interface. A n V. LEUTE and A. KALB. J. Phys. Chem, Solids 33 (1972), interesting and useful result of the study is the fact that using a combination of d.c. and transient m e a s u r e m e n t p. 417. In this paper the influence of the affinity of a phase boundary, reaction on the whole diffusion process techniques, both ~ and the effective epitaxial layer width