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Recombination radiation from tunneling p-n junctions in GaAs
mvi
ABSTRACTS OF PAPERS IN SOVIET PHYSICS-SOLID STATE
pp. 539-542).
Vol. 3, No. 5
Nasledov and V. N. Ravitch (Vol. 7, No. 2, pp. 634-636).
This is a study of the influence of the relation between electron mean free path, thickness of thin films and average crystallite size on the electrical conductivity of thin films. It is shown that when bismuth is condensed under certain conditions, the dependence of resistivity on film thickness exhibits p.cullaritiee which can be qualitatively explained by existing theories [Thompson, Fuk, !Caganov-Azbel, etc.]. The variation the resistance R~j as a function of thickness of (d-.V.r) is reported for thin Bi films: The curves were obtained during the condensation of Bi for substrate temperatures of 70 and 120°C. The condensation rate was 6 A/sec. The results are discussed,
A short analysis is made of published data on recombination radiation in GaAs tunnel diodes, and a set of inadequacies is found. In the present study, measurements were also made of the dependence of the forward current on voltage and of the integrated radiation on voltage and current in GaAs tunnel diodes fabricated by alloying a little tin ball to Znjoped3.GaAs a hole concentraThewith measurements were tion x 101 cmcurrent madeofat5 constant and under pulsed conditions at 77 and 293°K. The radiation was measured with a Ge detector. The following results were obtained: The dependence of the integrated intensity 4 on the current I (for current density range of 50 ~ A/cm2) can be represented as the sum of two terms = + 43 = A(T)In + 4 3(T, I), where n—2 and does not depend on temperature; A(T) decreases by an order of magnitude as the temperature increases from 77 to 293°K. The term 43(T, I) starts adding its contribution to ~2 at voltages of 1.1 to 1.3 eV. The temperature dependence of is much larger than that of ~ As the temperature increases, 43 decreases considerably and, in some junctions, tends to zero at room temperature. If the V-I characteristic exhibits a “hump” at some voltage this hump appears at the same voltage on the curve of light intensity vs. voltage. The fact that the “hump” appears simultaneously in the curves 1(u) and 4(u) indicates, in the author’s opinion, that the excess current to is deep related to a tunneling transition of electrons levels, and that it contributes to emission (the term 4~ -
Bibliography: 12 titles
TRAPPING OF PHOTO-EXCITED CARRIERS AT THE SURFACE OF SILICON. V. L. Litovchenko, A. P. Gorban and V. P. Kovkasink (Vol.7, No. 2, pp. 565-571). A small signal method was used: The equilibrium conditions in a small region of the energy gap at the surface are disturbed. Photoconductivity and field effect kinetics were studied. To study the surface potential, large flat-top pulses of voltage were applied to the surface, The measurements were performed in 10-6 Torr 300u thin samples o~fp-type (111) vacuum, in silicon (p.403 ohm cm, T—.l0~sec). The samples wer 9 etched in a m~xtyeof HNO3 (96%, 3)10atcm 0°C ), for HF 10 (48%, miii.5 cm Non-rectifying ) and acetic conacid (5 cm were made to the sample by alloying GaZn. tacts It is shown that the behavior of the photoconductivity can be related to the nature of the space charge in the surface layer. There is a discussion of the model for electron transport leading to the onset of bipolar photoconductivity, whereby the accumulation of carriers is responsible for “slowed recombination”. It is established that the trapping of photoexcited carriers at the surface is most pronounced on hydrated surfaces. A set of experimental dependences is shown. Bibliography: 20 titles
in the above formula). The ~2 component cannot Shockley be successfully or Shockley-Noise-Sah attributed to the current. classical The experimental dependpnce of 4(u) is much less abrupt than 4 ~eqU/BkT (U is the voltage across the junction; q, the electron charge) (B = 1 or 2) which would have been expected if followed a classical current dependence. It is assumed that ~2 is due to excess currents. It is found also that in contrast to the work of J. Hoover and It. Zucke [Proc. IEEE 51, 1237 (1963)], there is no radiation in the region of negative resistance of the tunnel diode. Also, no stimulated emission was found at voltage of -~ lv, i.e. at potentials much lower than the energy gap of GaAs. Curves are shown for the dependences of integrated radiation on current and on voltage. -~
Bibliography: 4 titles RECOMBINATION RADIATION FROM TUNNELING p-n JUNCTIONS IN GaAs. A. I. Imenkov, M.M. Kozlov, S.S. Mexkun, D.N.
INFLUENCE OF HIGH PRESSURE ON
ABSTRACTS OF PAPERS IN SOVIET PHYSICS-SOLID STATE
pp. 539-542).
Vol. 3, No. 5
Nasledov and V. N. Ravitch (Vol. 7, No. 2, pp. 634-636).
This is a study of the influence of the relation between electron mean free path, thickness of thin films and average crystallite size on the electrical conductivity of thin films. It is shown that when bismuth is condensed under certain conditions, the dependence of resistivity on film thickness exhibits p.cullaritiee which can be qualitatively explained by existing theories [Thompson, Fuk, !Caganov-Azbel, etc.]. The variation the resistance R~j as a function of thickness of (d-.V.r) is reported for thin Bi films: The curves were obtained during the condensation of Bi for substrate temperatures of 70 and 120°C. The condensation rate was 6 A/sec. The results are discussed,
A short analysis is made of published data on recombination radiation in GaAs tunnel diodes, and a set of inadequacies is found. In the present study, measurements were also made of the dependence of the forward current on voltage and of the integrated radiation on voltage and current in GaAs tunnel diodes fabricated by alloying a little tin ball to Znjoped3.GaAs a hole concentraThewith measurements were tion x 101 cmcurrent madeofat5 constant and under pulsed conditions at 77 and 293°K. The radiation was measured with a Ge detector. The following results were obtained: The dependence of the integrated intensity 4 on the current I (for current density range of 50 ~ A/cm2) can be represented as the sum of two terms = + 43 = A(T)In + 4 3(T, I), where n—2 and does not depend on temperature; A(T) decreases by an order of magnitude as the temperature increases from 77 to 293°K. The term 43(T, I) starts adding its contribution to ~2 at voltages of 1.1 to 1.3 eV. The temperature dependence of is much larger than that of ~ As the temperature increases, 43 decreases considerably and, in some junctions, tends to zero at room temperature. If the V-I characteristic exhibits a “hump” at some voltage this hump appears at the same voltage on the curve of light intensity vs. voltage. The fact that the “hump” appears simultaneously in the curves 1(u) and 4(u) indicates, in the author’s opinion, that the excess current to is deep related to a tunneling transition of electrons levels, and that it contributes to emission (the term 4~ -
Bibliography: 12 titles
TRAPPING OF PHOTO-EXCITED CARRIERS AT THE SURFACE OF SILICON. V. L. Litovchenko, A. P. Gorban and V. P. Kovkasink (Vol.7, No. 2, pp. 565-571). A small signal method was used: The equilibrium conditions in a small region of the energy gap at the surface are disturbed. Photoconductivity and field effect kinetics were studied. To study the surface potential, large flat-top pulses of voltage were applied to the surface, The measurements were performed in 10-6 Torr 300u thin samples o~fp-type (111) vacuum, in silicon (p.403 ohm cm, T—.l0~sec). The samples wer 9 etched in a m~xtyeof HNO3 (96%, 3)10atcm 0°C ), for HF 10 (48%, miii.5 cm Non-rectifying ) and acetic conacid (5 cm were made to the sample by alloying GaZn. tacts It is shown that the behavior of the photoconductivity can be related to the nature of the space charge in the surface layer. There is a discussion of the model for electron transport leading to the onset of bipolar photoconductivity, whereby the accumulation of carriers is responsible for “slowed recombination”. It is established that the trapping of photoexcited carriers at the surface is most pronounced on hydrated surfaces. A set of experimental dependences is shown. Bibliography: 20 titles
in the above formula). The ~2 component cannot Shockley be successfully or Shockley-Noise-Sah attributed to the current. classical The experimental dependpnce of 4(u) is much less abrupt than 4 ~eqU/BkT (U is the voltage across the junction; q, the electron charge) (B = 1 or 2) which would have been expected if followed a classical current dependence. It is assumed that ~2 is due to excess currents. It is found also that in contrast to the work of J. Hoover and It. Zucke [Proc. IEEE 51, 1237 (1963)], there is no radiation in the region of negative resistance of the tunnel diode. Also, no stimulated emission was found at voltage of -~ lv, i.e. at potentials much lower than the energy gap of GaAs. Curves are shown for the dependences of integrated radiation on current and on voltage. -~
Bibliography: 4 titles RECOMBINATION RADIATION FROM TUNNELING p-n JUNCTIONS IN GaAs. A. I. Imenkov, M.M. Kozlov, S.S. Mexkun, D.N.
INFLUENCE OF HIGH PRESSURE ON